JPH02266516A - Manufacture of gaalas epitaxial wafer - Google Patents
Manufacture of gaalas epitaxial waferInfo
- Publication number
- JPH02266516A JPH02266516A JP1088499A JP8849989A JPH02266516A JP H02266516 A JPH02266516 A JP H02266516A JP 1088499 A JP1088499 A JP 1088499A JP 8849989 A JP8849989 A JP 8849989A JP H02266516 A JPH02266516 A JP H02266516A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- gaas substrate
- epitaxial wafer
- curvature
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 24
- 239000007791 liquid phase Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 241000272522 Anas Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ＧａＡ、Ｑ Ａｓエピタキシャルウェハの製
造方法に係り、特に、膜厚が厚く、面積の大きなＧａＡ
Ｎ Ａｓ層を有するＧａＡｌＡｓエピタキシャルウェハ
の製造方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing GaA, QAs epitaxial wafers, and in particular, GaA, QAs epitaxial wafers with a thick film thickness and a large area.
The present invention relates to a method of manufacturing a GaAlAs epitaxial wafer having an NA layer.
［従来の技術１
高輝度の発光ダイオードには、ＧａＡｌＡｓ基板が多く
用いられているやこのＧａＡｇＡｓはＡｇの偏析係数が
大きいため直接単結晶成長させることは難しい。このな
め、一般にはＧａＡｓ基板上にＧａＡｇＡｓのエピタキ
シャル層を液相エピタキシャル成長によって厚く成長さ
せて、これをＧａＡｌＡｓ基板として用いている。[Prior Art 1] GaAlAs substrates are often used in high-brightness light emitting diodes, and it is difficult to directly grow single crystals of GaAgAs because the segregation coefficient of Ag is large. For this reason, generally a GaAgAs epitaxial layer is grown thickly on a GaAs substrate by liquid phase epitaxial growth, and this is used as the GaAlAs substrate.
この場合、ＧａＡｓとＧａＡｇＡｓとの格子定数は、エ
ピタキシャル成長温度付近においては、はぼ一致するが
、室温ではＧａＡｌＡｓの格子定数の方が大きくなる。In this case, the lattice constants of GaAs and GaAgAs are almost the same near the epitaxial growth temperature, but the lattice constant of GaAlAs is larger at room temperature.
このため、その熱膨脹係数の差によりＧａＡｇＡｓエピ
タキシャルウェハ３は第２図に示すように、ＧａＡｓ基
板２上に成長させたＧａＡｇＡｓ層１側に凸状に大きく
湾曲する。湾曲の大きさはＧａＡＮ Ａｓ １層の膜厚
が厚く、しかも面積が大きくなるほど大きくなり、つい
には湾曲に耐えられずクラック、割れが発生する。Therefore, due to the difference in coefficient of thermal expansion, the GaAgAs epitaxial wafer 3 is greatly curved in a convex shape toward the GaAgAs layer 1 grown on the GaAs substrate 2, as shown in FIG. The magnitude of the curvature increases as the thickness of the single GaAN As layer increases and the area increases, and eventually the curvature cannot be tolerated and cracks occur.
［発明が解決しようとする課題１
上述したようにＧａＡｌＡｓエピタキシャルウェハは、
ＧａＡｓ基板との格子定数の差による応力のため、湾曲
や割れが生じやすい。[Problem to be solved by the invention 1 As mentioned above, GaAlAs epitaxial wafers have
Curving and cracking are likely to occur due to stress due to the difference in lattice constant from the GaAs substrate.
特に、ＧａＡｆＪＡｓ層の膜厚が１００μｍ以上で、ウ
ェハの面積が大きくなると、湾曲は大きくなって、クラ
ックが発生し易くなり、以後のプロセス、例えばエピタ
キシー、露光、ＧａＡｓ基板の研磨除去等の大きな障害
となっていた。ＧａＡ、１ｌＡｓ層の膜圧を厚くするこ
とと、ウェハの面積を大きくすることは実用化する上で
必要なことである。In particular, when the thickness of the GaAfJAs layer is 100 μm or more and the area of the wafer becomes large, the curvature becomes large and cracks are likely to occur, which poses a major problem in subsequent processes such as epitaxy, exposure, and polishing removal of the GaAs substrate. It became. Increasing the film thickness of the GaA and 11As layers and increasing the area of the wafer are necessary for practical use.
本発明の目的は、薄いＧａＡｓ基板を用いることによっ
て、上述した従来技術の欠点を解消して、ウェハの湾曲
を大幅に低減した新規なＧａＡｕＡＳエピタキシャルウ
ェハの製造方法を提供することにある。An object of the present invention is to provide a novel method for manufacturing a GaAuAS epitaxial wafer, which uses a thin GaAs substrate, eliminates the drawbacks of the prior art described above, and significantly reduces wafer curvature.
［課題を解決するための手段］
本発明のＧａＡＮＡｓエピタキシャルウェハの製造方法
は、ＧａＡｓ基板上にＧａＡ、Ｑ Ａｓ層を液相エピタ
キシャル成長させたＧａＡ、Ｉ）Ａｓエピタキシャルウ
ェハにおいて、ＧａＡｇＡｓ層のＡＮＡｓ混晶比が０．
０５以上で厚さが１００μｍ以上の場合、厚さが３０μ
ｍ以上１００μｍ以下のＧａＡｓ基板を用いるようにし
たものである。[Means for Solving the Problems] The method for manufacturing a GaANAs epitaxial wafer of the present invention is a GaA, I) As epitaxial wafer in which a GaA, QAs layer is grown on a GaAs substrate by liquid phase epitaxial growth, and the ANAs mixed crystal of the GaAgAs layer is The ratio is 0.
05 or more and the thickness is 100μm or more, the thickness is 30μm
A GaAs substrate having a diameter of 100 μm or more is used.
ＧａＡ、１）Ａｓ層のＡ、Ｑ混晶比が０．０５以上で厚
さが１００μｍ以上の場合において、ＧａＡｓ基板の厚
さが１００μｍ以下のときには、湾曲の大きさは１００
μｍ以下となり、クラックが発生しない。GaA, 1) When the A, Q mixed crystal ratio of the As layer is 0.05 or more and the thickness is 100 μm or more, and the thickness of the GaAs substrate is 100 μm or less, the magnitude of the curvature is 100 μm or more.
The thickness is less than μm, and no cracks occur.
また、厚さが３０μｍ以下のＧａＡｓ基板は、既述した
ように製造が非常に難しく、しかも、エピタキシャル成
長が困難となるため、実質上使用することはできない。Furthermore, as described above, a GaAs substrate having a thickness of 30 μm or less is extremely difficult to manufacture and epitaxial growth is difficult, so that it cannot be practically used.
したがって、ＧａＡｓ基板の厚さを３０μｍ以上１００
μｍ以下に制限する必要がある。Therefore, the thickness of the GaAs substrate should be 30 μm or more and 100 μm or more.
It is necessary to limit it to below μm.
［作用］
ＧａＡＪＩＡｓエピタキシャルウェハは、結晶面（１０
０）面のＧａＡｓ基板上にＧａＡ、ＱＡｓ層を液相エピ
タキシャル成長させることにより形成する。[Function] GaAJIAs epitaxial wafer has a crystal plane (10
0) A GaA and QAs layer is formed by liquid phase epitaxial growth on a GaAs substrate.
ＧａＡｇＡｓ層のＡＪＩＡｓ混晶比を変えることによっ
て、ＧａＡ、ｆｌＡｓ系ＬＥＤは結晶組成に応じて禁制
帯幅を自由に変えることができ、赤外から可視光の赤色
までの発光が可能である。赤外しＥＤは光通信用や測距
用の光源として、また、可視ＬＥＤは屋外表示用などの
高輝度ＬＥＤとして用いられる。混晶比が０．０５以上
０．３５近辺以下だと赤外ＬＥＤ用の発光波長が得られ
、０゜４５以上にすると発光波長６６０ｎｍの可視光を
透過するＧａＡρＡｓ光透過層を得ることができる。By changing the AJIAs mixed crystal ratio of the GaAgAs layer, GaA, flAs-based LEDs can freely change the forbidden band width depending on the crystal composition, and can emit light from infrared to visible red. Infrared EDs are used as light sources for optical communication and distance measurement, and visible LEDs are used as high-intensity LEDs for outdoor displays and the like. When the mixed crystal ratio is 0.05 or more and around 0.35 or less, an emission wavelength suitable for infrared LEDs can be obtained, and when it is 0°45 or more, a GaAρAs light transmission layer that transmits visible light with an emission wavelength of 660 nm can be obtained. .
また、ＧａＡ、ｌｌＡｓ系ＬＥＤはＧａＡ、１）Ａｓ光
透過層付きにすることによって、光の吸収損失を低減す
ることが可能であり、大幅な輝度の向上が望める。光透
過層付きＬＥＤは一般にＧａＡＪＩＡＳウェハ上にエピ
タキシャル成長により形成される。ここで、エピタキシ
ャル成長用基板としての、ある程度の厚さを持っなＧａ
ＡＪＩＡｓウェハが必要となる。その厚さは通常１００
μｍ以上必要とされる。Furthermore, by providing a GaA, 1)As light transmitting layer in a GaA, 11As-based LED, light absorption loss can be reduced, and a significant improvement in brightness can be expected. LEDs with light-transmitting layers are generally formed on GaAJIAS wafers by epitaxial growth. Here, as a substrate for epitaxial growth, Ga having a certain thickness is used.
AJIAs wafer is required. Its thickness is usually 100
μm or more is required.
このようにＧ ａ Ａ ｆＪ Ａ ｓ ＮのＡＪＩＡｓ
の混晶比が０．０５以上で厚さが１００μｍの場合、厚
さが３０ μｍ以上］、 ＯＯμｍ以下のＧａＡｓ基板
を用いるが、特に、Ｇ ａ Ａ ｓ基板の厚さが１００
μｍ以下だと湾曲やクラックが低減するのは、基板が薄
いために基板とＡρＡｓとの格子定数の差による応力が
小さくなるためである。In this way, AJIAs of G a A f J A s N
When the mixed crystal ratio is 0.05 or more and the thickness is 100 μm, a GaAs substrate with a thickness of 30 μm or more is used, and a GaAs substrate with a thickness of 00 μm or less is used.
The reason why curvature and cracks are reduced when the thickness is less than .mu.m is because the substrate is thin and the stress due to the difference in lattice constant between the substrate and A.rho.As is reduced.
第１図は直径が４０ｍｍのＧａＡｓ基板上に膜厚２００
μｍ、ＡＮ Ａｓ混晶比０．４のＧａＡｊ Ａｓ層をエ
ピタキシャル成長した場合の、Ｇ ａ Ａ ｓ基板の厚
さとウェハの湾曲、クラックとの関係を示したものであ
る。これより、ＧａＡｓ基板の厚さが１００μｍ以下の
ときには、湾曲の大きさは１００μｍ以下となり、クラ
ックが発生しないことがわかる。Figure 1 shows a film with a thickness of 200 mm on a GaAs substrate with a diameter of 40 mm.
2 shows the relationship between the thickness of the GaAs substrate, wafer curvature, and cracks when a GaAj As layer with an AN As mixed crystal ratio of 0.4 is epitaxially grown. From this, it can be seen that when the thickness of the GaAs substrate is 100 μm or less, the magnitude of curvature is 100 μm or less, and no cracks occur.
特に、ＧａＡｓ基板の厚さを、ＧａＡｆＪＡｓ層の２分
の１以下とすることが望ましい。In particular, it is desirable that the thickness of the GaAs substrate be one-half or less of the thickness of the GaAfJAs layer.
このように、ウェハの湾曲が７０μｍ以下で、膜厚が１
００μｍ以上、しかも直径が４０ｍｍ以上のＧａＡＪ！
ＡｓエピタキシャルウェハをＡβＡｓ混晶比が０．０５
以上のもの全てにおいて容易に得ることができることか
ら、発光波長が８０００人程度の赤外ＬＥＤから７００
０Å以下の可視ＬＥＤまでの光透過層として工業的に利
用することができる。In this way, the curvature of the wafer is 70 μm or less and the film thickness is 1
GaAJ with a diameter of 00μm or more and a diameter of 40mm or more!
As epitaxial wafer with AβAs mixed crystal ratio of 0.05
Since all of the above can be easily obtained, the emission wavelength is about 700 from an infrared LED of about 8000.
It can be used industrially as a light transmission layer for visible LEDs up to 0 Å or less.
［実施例Ｊ
直径が４０ｍｍ、厚さが６０ μｍのＧａＡｓ基板上に
、Ｇａ、ＧａＡｓ、ＡｆＪからなる溶液から、成長開始
温度が９５０°Ｃ″′Ｃ’ Ａ Ｊ）混晶比がそれぞれ
０．０５，０．４，０．７のＧａＡ、ＱＡｓ層を、液相
エピタキシャル成長により２００μｍ成長させた。[Example J] On a GaAs substrate with a diameter of 40 mm and a thickness of 60 μm, a growth starting temperature of 950°C'''C' A J) from a solution consisting of Ga, GaAs, and AfJ) with a mixed crystal ratio of 0. GaA and QAs layers of 0.05, 0.4, and 0.7 were grown to a thickness of 200 μm by liquid phase epitaxial growth.
その結果、ＧａＡＪＩＡｓエピタキシャルウェハの湾曲
の大きさはそれぞれ３０μｍ、５０μｍ。As a result, the curvature of the GaAJIAs epitaxial wafer was 30 μm and 50 μm, respectively.
６０μｍ以下となり、いずれの場合もクラックは発生し
ていなかった。The thickness was 60 μm or less, and no cracks were observed in any case.
［比較例１
直径が４０ｍ＋ｎ、厚さが１２０μｍのＧ ａ Ａ ｓ
基板上に、Ｇａ、ＧａＡｓ、ＡＪＩＩからなる溶液から
、成長開始温度が９５０℃で、ＡｌＡｓ混晶比が上記と
同様にそれぞれ０．０５，０．４，０．７のＧａＡ、Ｑ
Ａｓ層を、液相エピタキシャル成長により２００μｍ成
長させた。[Comparative Example 1 GaAs with a diameter of 40m+n and a thickness of 120μm
On the substrate, GaA and Q were grown from a solution consisting of Ga, GaAs, and AJII at a growth start temperature of 950°C and with AlAs mixed crystal ratios of 0.05, 0.4, and 0.7, respectively, as above.
The As layer was grown to 200 μm by liquid phase epitaxial growth.
その結果、ＧａＡρＡ、 ｓエピタキシャルウェハの湾
曲の大きさは、それぞれ７０μｍ、１２０μｍ、１５０
μｍとなり、そのうち特にＡＪ２Ａｓ混晶比が０．４と
０．７の場合にはＧａＡＦ Ａｓ層にクラックが発生し
、半数が割れていた。As a result, the magnitude of the curvature of GaAρA, s epitaxial wafers is 70 μm, 120 μm, and 150 μm, respectively.
μm, and among these, cracks occurred in the GaAF As layer particularly when the AJ2As mixed crystal ratio was 0.4 and 0.7, and half of the GaAF As layers were broken.
又、厚さが３０μｍ以下のＧａＡｓ基板は薄すぎるため
、研磨やハンドリングでほぼ全数側れてしまい、作成す
ることができなかった。Furthermore, since GaAs substrates with a thickness of 30 μm or less are too thin, almost all of them fall off during polishing and handling, making it impossible to produce them.
［応用例］
上記実施例で作成した、ＡｌＡｓ混晶比が００５．０．
４，０．７のＧａＡｆＪＡｓエピタキシャルウェハのＧ
ａＡｓ基板を研磨で除去し、ＧａＡｌＡｓ層のみにした
ところ湾曲の大きさがそれぞれ２０μｍ、４０μｍ、５
０μｍ以下と小さいＧａＡ、９Ａｓエピタキシヤルウエ
ハが得られた。[Application example] The AlAs mixed crystal ratio created in the above example was 005.0.
G of GaAfJAs epitaxial wafer of 4,0.7
When the aAs substrate was removed by polishing to leave only the GaAlAs layer, the magnitude of the curvature was 20 μm, 40 μm, and 5 μm, respectively.
GaA, 9As epitaxial wafers as small as 0 μm or less were obtained.
［効果１
本発明によれば、厚さが３０μｍ以上１００μｍ以下の
薄いＧａＡｓ基板を用いるようにしたので、ＧａＡｓ基
板とＡｆＪＡｓとの格子定数の差による応力が低減でき
、Ｇａ、ＡｌＡｓエピタキシャルウェハの湾曲を大幅に
低減できる。[Effect 1] According to the present invention, since a thin GaAs substrate with a thickness of 30 μm or more and 100 μm or less is used, stress due to the difference in lattice constant between the GaAs substrate and AfJAs can be reduced, and the curvature of the Ga, AlAs epitaxial wafer can be reduced. can be significantly reduced.
第１図はＧａＡｓ基板の厚さと湾曲、クラックの関係を
示した説明図、第２図は従来のＧａＡρＡｓエピタキシ
ャルウェハの断面図を示したものである。
１はＧａＡ、ＱＡｓ層、２はＧａＡｓ基板、３はＧａＡ
ｊ Ａｓエピタキシャルウェハである。
ＧａＡｓ基板の厚さ（μｆｆ１）
ＧａＡｓ基板の厚さとＧａＡ１２Ａｓ工辷°タ舷キルツ
＄ハの湾曲の大きさの関係第１図
従来のＧａＡえＡｓ工じハシｔルウ二ハの断面図第２図FIG. 1 is an explanatory diagram showing the relationship between thickness, curvature, and cracks of a GaAs substrate, and FIG. 2 is a sectional view of a conventional GaAρAs epitaxial wafer. 1 is GaA, QAs layer, 2 is GaAs substrate, 3 is GaA
j As epitaxial wafer. Thickness of the GaAs substrate (μff1) Relationship between the thickness of the GaAs substrate and the magnitude of curvature of the GaA12As machining frame Figure 1 Cross-sectional view of the conventional GaAs machining frame Figure 2
Claims (1)
させたＧａＡｌＡｓエピタキシャルウェハにおいて、 ＧａＡｌＡｓ層のＡｌＡＳ混晶比が０．０５以上で厚さ
が１００μｍ以上の場合、厚さが３０μｍ以上１００μ
ｍ以下のＧａＡｓ基板を用いることを特徴とするＧａＡ
ｌＡｓエピタキシャルウェハの製造方法。[Claims] In a GaAlAs epitaxial wafer in which a GaAlAs layer is epitaxially grown on a GaAs substrate, when the GaAlAs layer has an AlAS mixed crystal ratio of 0.05 or more and a thickness of 100 μm or more, the thickness is 30 μm or more and 100 μm or more.
GaA characterized by using a GaAs substrate of m or less
A method for manufacturing an lAs epitaxial wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1088499A JPH02266516A (en) | 1989-04-07 | 1989-04-07 | Manufacture of gaalas epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1088499A JPH02266516A (en) | 1989-04-07 | 1989-04-07 | Manufacture of gaalas epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02266516A true JPH02266516A (en) | 1990-10-31 |
Family
ID=13944515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1088499A Pending JPH02266516A (en) | 1989-04-07 | 1989-04-07 | Manufacture of gaalas epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02266516A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003045836A1 (en) * | 2001-11-30 | 2003-06-05 | Silverbrook Research Pty. Ltd. | Differential stress reduction in thin films |
| AU2002247566B2 (en) * | 2001-11-30 | 2005-05-05 | Silverbrook Research Pty Ltd | Differential stress reduction in thin films |
| AU2005203476B2 (en) * | 2001-11-30 | 2005-11-03 | Silverbrook Research Pty Ltd | Formation of a crystalline thin film structure |
-
1989
- 1989-04-07 JP JP1088499A patent/JPH02266516A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003045836A1 (en) * | 2001-11-30 | 2003-06-05 | Silverbrook Research Pty. Ltd. | Differential stress reduction in thin films |
| AU2002247566B2 (en) * | 2001-11-30 | 2005-05-05 | Silverbrook Research Pty Ltd | Differential stress reduction in thin films |
| AU2005203476B2 (en) * | 2001-11-30 | 2005-11-03 | Silverbrook Research Pty Ltd | Formation of a crystalline thin film structure |
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