JPS6381990A - Materials for light emitting element - Google Patents
Materials for light emitting elementInfo
- Publication number
- JPS6381990A JPS6381990A JP61226276A JP22627686A JPS6381990A JP S6381990 A JPS6381990 A JP S6381990A JP 61226276 A JP61226276 A JP 61226276A JP 22627686 A JP22627686 A JP 22627686A JP S6381990 A JPS6381990 A JP S6381990A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ingap
- mixed crystal
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 36
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 14
- 229910005540 GaP Inorganic materials 0.000 claims description 12
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000013308 plastic optical fiber Substances 0.000 description 6
- 101100240461 Dictyostelium discoideum ngap gene Proteins 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光通信用発光素子の材料に関し、詳細には、
プラスチック光フアイバ通信の光源として用いられる光
通信用発光ダイオードに最適な発光素子用材料に関する
ものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a material for a light emitting element for optical communication, and in particular,
The present invention relates to materials for light emitting elements that are optimal for light emitting diodes for optical communications used as light sources for plastic optical fiber communications.
従来、光通信に用いられているプラスチック光ファイバ
、特にコア部がポリメタクリル酸メチル（ＰＭＭＡ）か
らなり、クラッド部がより低損失のポリメタクリル酸メ
チルにたとえばフッ素（Ｆ）を分子鎖に導入したものか
らなるプラスチック光ファイバの伝送損失は、第３図に
示すように、波長が６４０〜６７０ｎｍ（以下、６６０
ｎｍ帯波長と呼ぶ）、及び５５０〜６００ｎｍ（以下
、５７０ ｎｍ帯波長と呼ぶ）のところに顕著な低損失
領域があることが知られている。この伝送損失は、６６
０ ｎｍ帯波長で１５０〜２８０ ｄＢ／ｋｍ１５７０
ｎｍ帯波長では１２０〜１７０ｄＢ／ｋｍとなる。Conventionally, plastic optical fibers used for optical communications, especially the core part, are made of polymethyl methacrylate (PMMA), and the cladding part is polymethyl methacrylate, which has a lower loss, with for example fluorine (F) introduced into the molecular chain. As shown in Figure 3, the transmission loss of a plastic optical fiber made of
It is known that there are significant low loss regions in the wavelength range of 550 to 600 nm (hereinafter referred to as the 570 nm band wavelength). This transmission loss is 66
150-280 dB/km1570 at 0 nm band wavelength
In the nm band wavelength, it is 120 to 170 dB/km.
また、低損失領域の幅を見ると、６６ Ｑ ｎｍ帯波長
よシも５７０ ｎｍ帯波長の方が幅広−。この事は、発
光ダイオードの発光波長に分布があることを考えると、
よシ広い低損失領域を有する５ ７０ ｎｍ帯波長の発
光ダイオードであれば光ファイバによる伝送損失が少な
くな、ることを示すものである。Also, looking at the width of the low loss region, the 570 nm band wavelength is wider than the 66 Q nm band wavelength. Considering that there is a distribution in the emission wavelength of light emitting diodes, this means that
This shows that a light-emitting diode with a wavelength in the 570 nm band, which has a wider low-loss region, has less transmission loss due to the optical fiber.
このように、プラスチック光ファイバを用いた光通信の
場合、発光中心波長が６６０ ｎｍ帯の赤色発光ダイオ
ードよりも、発光中心波長が５７０ ｎｍ帯の緑色発光
ダイオードを光源として用いた方が、伝送損失が少なく
なることは明白であ′る。In this way, in the case of optical communication using plastic optical fibers, the transmission loss is higher when a green light emitting diode with a center emission wavelength in the 570 nm band is used as a light source than a red light emitting diode with a center emission wavelength in the 660 nm band. It is clear that there will be less.
ところで従来、６６０ ｎｍ帯波長の赤色発光ダイオー
ド古しては、間接遷移型のＧａＡｓＰ ｓ及び直接遷移
型のＧａＡｌＡｓがあり、発光効率はそれぞれ０．１〜
０．２％（発光輝度でｉｏｏ〜３００ ／ｌＷ ） 、
及び２〜８チ（発光輝度で５００〜２，０００ ／＃）
である。これに対し、５７０ ｎｍ帯波長の緑色発光ダ
イオードとしては、間接遷移型のＧａＰやＧａＡｓＰが
あるだけで、その発光効率は０．１〜０．２％（発光輝
度で２５〜５０ｐＷ ）という低い値である。そのため
、従来の緑色発光ダイオードは、プラスチック光７アイ
パの伝送損失の点では有利であるが、低輝度のために光
通信用には不適当であった。By the way, conventional red light emitting diodes with a wavelength in the 660 nm band include indirect transition type GaAsPs and direct transition type GaAlAs, each of which has a luminous efficiency of 0.1 to 0.1.
0.2% (luminance luminance: ioo~300/lW),
and 2 to 8 inches (500 to 2,000/# in luminance brightness)
It is. On the other hand, as green light emitting diodes with a wavelength in the 570 nm band, there are only indirect transition type GaP and GaAsP, and their luminous efficiency is as low as 0.1 to 0.2% (25 to 50 pW in luminance). It is. Therefore, although conventional green light emitting diodes are advantageous in terms of transmission loss for plastic optical 7-eyes, they are unsuitable for optical communications due to their low brightness.
そこで現在、ＧａＰ基板またはＧａＡｓ基板上にＧａＡ
ｓＰ金成長させた５ ７０ ｎｍｍ帯波付付近黄色〜緑
色）の発光ダイオードが提供されているが、全て表示用
として使用されるものである。また、上記ＧａＰやＧａ
Ａｓ Ｐの発光ダイオードは、間接遷移型であるため、
発光出力及び変調速度が低く、６６０ ｎｍ帯波長の赤
色発光ダイオードのように使用できず、光通信用として
は実用化されていない。Therefore, currently GaA is used on GaP or GaAs substrates.
SP gold-grown 570 nm band (near yellow to green) light emitting diodes have been provided, all of which are used for display purposes. In addition, the above GaP and Ga
Since the AsP light emitting diode is an indirect transition type,
Due to its low light emitting output and modulation speed, it cannot be used like a red light emitting diode with a wavelength in the 660 nm band, and has not been put into practical use for optical communications.
そのため、上記のＧａＰ或いはＧａＡ、ｓＰからなる緑
色発光ダイオードの欠点を克服Ｉ〜、５７０ ｎｍ帯波
長の有利性を活用することができる光通信用緑色発光ダ
イオードが提供されている。この緑色発光ダイオードは
、ＧａＡｓＰＯ代わりにＩｎＧａＰからなる眉をＧａＡ
ｓ基板上に成長させたもので、直接遷移型であるため、
発光効率が良く、発光出力が高く、変調も高速である。Therefore, a green light emitting diode for optical communication has been provided which can overcome the drawbacks of the green light emitting diode made of GaP, GaA, or sP described above and can take advantage of the advantage of the wavelength in the 570 nm band. This green light emitting diode is made of InGaP instead of GaAsPO.
Since it is grown on an s substrate and is a direct transition type,
It has good luminous efficiency, high luminous output, and fast modulation.
用途的には、プラスチック光フアイバ短距離通信用（移
動体内、家庭内、建物内など）、数字及び文字表示用（
大型表示灯、大型表示装置など）、ＯＡ機器用（ファッ
クス、複写機など）など多様に渡っている。Applications include plastic optical fiber for short-distance communication (in moving vehicles, homes, buildings, etc.), and for displaying numbers and characters (
They are used in a wide variety of applications, including large indicator lights, large display devices, etc.) and office automation equipment (fax machines, copy machines, etc.).
一般に、半導体デバイスを製作する場合、バルク結晶よ
り得られる基板上にエピタキシャル成長を行う等の方法
によっているが、混晶半導体を用いる場合は現在のとこ
ろ、そのバルク結晶がないのが実情である。そのため、
化合半導体混晶のバルク結晶を得るために多くの研究が
なされているが、各元素の偏析係数が異ることと蒸気圧
の高い構成元素を含んでいるために未だ基板となるよう
なバルク結晶が得られていない。そのためＩｎＧａＰ混
晶の成長にはＧａＡｓ基板あるいはＧａＰ基板等の緑色
発光ダイオード用ＩｎＧａＰ混晶とは格子定数の異った
基板が用いられ、基板とＩｎＧａＰエピタキシャル成長
層との間に格子定数を整合するためのＧａＡｓＰ等の組
成傾斜層を設ける必要があった。Generally, when manufacturing a semiconductor device, a method such as epitaxial growth is performed on a substrate obtained from a bulk crystal is used, but when using a mixed crystal semiconductor, there is currently no such bulk crystal. Therefore,
Many studies have been carried out to obtain bulk crystals of compound semiconductor mixed crystals, but bulk crystals that can be used as substrates are still difficult to obtain because the segregation coefficients of each element are different and they contain constituent elements with high vapor pressure. is not obtained. Therefore, to grow the InGaP mixed crystal, a substrate such as a GaAs substrate or a GaP substrate, which has a different lattice constant from that of the InGaP mixed crystal for green light emitting diodes, is used, and in order to match the lattice constant between the substrate and the InGaP epitaxial growth layer. It was necessary to provide a compositionally graded layer of GaAsP or the like.
傾斜層は、別の材料を用いて基板の格子定数と同一の格
子定数の層をまず基板上に成長させ、その層上に徐々に
格子定数を変化させた層を順次成長させて、最後に発光
層であるエピタキシャル成長層の格子定数と同一の格子
定数の層を成長させたものである。それ故、ＧａＡｓ基
板上に発光材料のＩｎＧａＰ層をエピタキシャル成長さ
せる場合は、ＧａＡｓｙＰｌ−ｙからなる傾斜層を設け
る。すなわち、このｙの値を徐々に小さくした層（Ｐの
含有量を徐々に大きくした層）を基板上に順次に成長さ
せたものを傾斜層とすることにより、ＧａＡｓの格子定
数とＩｎＧａＰの格子定数との相違を緩和することがで
きる。A graded layer is created by first growing a layer with the same lattice constant as that of the substrate on a substrate using another material, then sequentially growing layers with gradually changing lattice constants on top of that layer. A layer with the same lattice constant as that of the epitaxially grown layer that is the light emitting layer is grown. Therefore, when an InGaP layer of a light emitting material is epitaxially grown on a GaAs substrate, a gradient layer made of GaAsyPl-y is provided. In other words, the lattice constant of GaAs and the lattice of InGaP can be changed by forming a gradient layer in which layers in which the value of y is gradually decreased (layers in which the P content is gradually increased) are grown on the substrate in sequence. Differences from constants can be alleviated.
ところで、傾斜層を設けた緑色発光ダイオードでは、Ｇ
ａＡｓ基板上にＧａＡｓｙＰｌ−、傾斜層を設けた緑色
発光素子用材料が市販されている。しか１７ながら、こ
の傾斜層を設けた市販の発光素子用材料はＧａＡｓ基板
のみに比べて非常に高価であり、結果として製造される
種々の発光素子、たとえば発光ダイオードやレーデダイ
オードなども高価になる。By the way, in a green light emitting diode with a gradient layer, G
A green light-emitting element material in which a GaAsyPl-graded layer is provided on an aAs substrate is commercially available. However, commercially available materials for light emitting devices provided with this graded layer are much more expensive than GaAs substrates alone, and as a result, the various light emitting devices manufactured, such as light emitting diodes and LED diodes, are also expensive. Become.
従って本発明の目的は、上述の問題点を解決し、ＧａＡ
ｓ基板上にＧａＡｓ ｙ Ｐ １−ｙ傾斜層を設けた緑
色発光素子用材料よシも安価で経済的な光通信に最適な
発光素子用材料を提供することにある。Therefore, it is an object of the present invention to solve the above-mentioned problems and to
It is an object of the present invention to provide a material for a light emitting device that is inexpensive and suitable for economical optical communication, as well as a material for a green light emitting device in which a GaAs y P 1-y gradient layer is provided on an S substrate.
前記目的は、緑色発光ダイオード用Ｉ ｎＧａＰ混晶と
格子整合するゲルマニウムシリコン（ＧｅＳｉ）！晶と
ＩｎＧａＰ混晶層からなシ、該ＩｎＧａＰ層の混晶組成
が燐化ガリウム（ＧａＰ ）のモル分率で０．５０〜０
．７５であり、該ＩｎＧａＰ層がｐｎ接合を有すること
を特徴とする発光素子用材料によって達成される。本発
明において、ＧｅＳｉ基板上のＩｎＧａＰ層の混晶組成
は、ＧａＰのモル分率で表わすと０．５０〜０．７５で
あシ、好ましくは０．７０〜０．７４である。ＧａＰ（
７）モル分率が０．７０〜０．７４の材料は発光出力及
び変調速度に優れたものである。The purpose is to lattice match germanium silicon (GeSi) with InGaP mixed crystal for green light emitting diodes! The mixed crystal composition of the InGaP layer is 0.50 to 0 in mole fraction of gallium phosphide (GaP).
．． 75, and is achieved by a light emitting device material characterized in that the InGaP layer has a pn junction. In the present invention, the mixed crystal composition of the InGaP layer on the GeSi substrate is 0.50 to 0.75, preferably 0.70 to 0.74, expressed as a GaP mole fraction. GaP(
7) Materials with a mole fraction of 0.70 to 0.74 are excellent in light emission output and modulation speed.
ＩｎＧａＰ層は液相成長法あるいは気相成長法などの既
知の手段によって基板上に成長させることができる。Ｉ
ｎＧａ Ｐ混晶においては燐（ｐ）の蒸気圧が高い等の
理由からバルク結晶を得ることは大変困難であるが、Ｇ
ｅＳｉ混晶のバルク結晶は、ＧｅおよびＳｉのそれぞれ
のバルク結晶は様々な方法で充分に研究開発されて工業
化に至っているので、それらの組み合わせにより高品位
な結晶を得ることが可能である。第２図にＧｅＳｉ混晶
とＩｎＧａＰ混晶の格子定・数の関係を示す。第２図よ
、！ｌ） ＧｅＳｉとＩｎＧａＰは広い組成範囲で格子
整合していることが分る。特にＧａＰのモル分率が０．
７４であるＩｎＧａＰ混晶はＧ。The InGaP layer can be grown on the substrate by known means such as liquid phase epitaxy or vapor phase epitaxy. I
In the nGaP mixed crystal, it is very difficult to obtain bulk crystals due to the high vapor pressure of phosphorus (p).
As for bulk crystals of eSi mixed crystals, bulk crystals of Ge and Si have been sufficiently researched and developed by various methods and have been industrialized, so it is possible to obtain high-quality crystals by combining them. FIG. 2 shows the relationship between the lattice constant and number of GeSi mixed crystal and InGaP mixed crystal. Figure 2! l) It can be seen that GeSi and InGaP are lattice matched over a wide composition range. Especially when the mole fraction of GaP is 0.
74, the InGaP mixed crystal is G.
のモル分率で０．６であるＧｅＳｉ混晶と格子整合する
。It is lattice matched with GeSi mixed crystal with a molar fraction of 0.6.
すなわち、Ｇｅのモル分率で０．５〜０，７、好ましく
は０．６のＧｅＳｉ混晶基板上にＧａＰのモル分率で０
．５〜０．７５、好ましくは０．７０〜０．７４のＩｎ
ＧａＰ混晶層を既知の成長方法によって作製するので、
安価な材料と既知の方法によシ大量製産の可能である基
板を用いることと、ＧａＡｓＰ等の傾斜層を成長する手
間が省けることから、本発明により、前記目的を全て達
成した、安価で経済的な光通信に最適な発光素子用材料
が得られることが明かとなった。That is, on a GeSi mixed crystal substrate with a Ge mole fraction of 0.5 to 0.7, preferably 0.6, a GaP mole fraction of 0.
．． 5 to 0.75, preferably 0.70 to 0.74 In
Since the GaP mixed crystal layer is produced by a known growth method,
By using inexpensive materials and a substrate that can be mass-produced by known methods, and by eliminating the need to grow a graded layer such as GaAsP, the present invention achieves all of the above objectives and is inexpensive. It has become clear that a material for light emitting devices that is optimal for economical optical communications can be obtained.
以下、本発明の発光素子用材料の実施例を図面に基づい
て説明する。Examples of the light emitting element material of the present invention will be described below based on the drawings.
第１図に本発明の一実施例を示す。FIG. 1 shows an embodiment of the present invention.
本発明の材料は、第１図（ａ）に示すようなｎ型Ｇｅ５
ｔ基板１上にｎ型Ｉ ｎＧａＰ層２を成長させ、さらに
その上にｐ・型ＩｎＧａＰ層３を設けた３層構造あるい
は（ｂ）に示すようなｐ型ＧｅＳｉ基板り′上にｐ型Ｉ
ｎＧａＰ層２′を成長させ、さらにその上にｎ型ＩｎＧ
ａＰ層３′を設けた３層構造からなシ、ＧｅＳｉ基板の
混晶組成ｆ’ｉ Ｇｅのモル分率で０．５〜０．７、好
ましくは０．６．ＩｎＧａＰ層の混晶組成は０．５０〜
０．７５、好ましくは０．７０〜０．７４である。また
明かなように２と３および２′と３′の界面にはＰｎ接
合が形成されている・この材料はＧａＡｓ Ｐなどの傾
斜層を設けることなしにＩｎＧａＰ層を格子整合して成
長することができるので、ミスフィツト転位等の問題が
全くない上に従来の方法よりも手間が省けて非常に安価
であシ、この材料を用いてたとえば緑色発光ダイオード
を製造すれば、すなわちこの材料にｐ側電極材及びｎ側
電極材を真空蒸着などの手段によって設けて発光ダイオ
ードとすれば、結果として発光ダイオードの製造コスト
を下げることができる。第１図においてｎ型ＩｎＧａＰ
層のドナー不純物としてはＳ、Ｓｉ、Ｔｅ、Ｓｅなど（
好適にはＴｅ）、ｐ型ＩｎＧａＰ層のアクセプタ不純物
としてはＧｅ、Ｂｅ。The material of the present invention is an n-type Ge5 as shown in FIG. 1(a).
A three-layer structure in which an n-type I nGaP layer 2 is grown on a t-substrate 1 and a p-type InGaP layer 3 is further formed on it, or a p-type I nGaP layer 2 is grown on a p-type GeSi substrate as shown in (b).
An nGaP layer 2' is grown, and an n-type InG layer is further grown on top of the nGaP layer 2'.
If the GeSi substrate has a three-layer structure including the aP layer 3', the mixed crystal composition f'i of the Ge mole fraction is 0.5 to 0.7, preferably 0.6. The mixed crystal composition of the InGaP layer is 0.50~
0.75, preferably 0.70 to 0.74. Also, as is clear, Pn junctions are formed at the interfaces between 2 and 3 and 2' and 3'. This material can be grown by lattice matching the InGaP layer without providing a graded layer such as GaAsP. Because of this, there are no problems such as misfit dislocations, and it is also much less labor-intensive and inexpensive than conventional methods.If a green light-emitting diode is manufactured using this material, If the electrode material and the n-side electrode material are provided by means such as vacuum evaporation to form a light emitting diode, the manufacturing cost of the light emitting diode can be reduced as a result. In Figure 1, n-type InGaP
Donor impurities in the layer include S, Si, Te, Se, etc.
Preferably Te), and Ge and Be as acceptor impurities of the p-type InGaP layer.
Ｃｄ 、Ｍｇ 、Ｚｎ （好適にはＺｎ ）を用いれば
よい。また、ＩｎＧａＰ混晶の電子および正相の移動度
を考慮するとｐ側での発光が望ましいが、その場合のｎ
形ＩｎＧａＰ層の不純物濃度は１０１６〜１ｏ１８／ｃ
ｒｎ３、ｐ形ＩｎＧａＰ層の不純物濃度は１０１５〜１
ｏ１７／ｃｒｎ３が適当である。通常はｐ形の方が高不
純濃度を達成しやすいのでｎ形ＩｎＧａＰ側での発光が
主となるが、その場合はｎ形ＩｎＧａＰ層の不純物濃度
は１０１５〜１０ ”７ｃｍ３、ｐ形ＩｎＧａＰ層の不
純物濃度は１０〜１０／ｃＩｎ が適当である。２，２
′のＩｎＧａＰ層は液相成長あるいは気相成長などの既
知の方法によって容易に成長でき、またｐｎ接合を形成
するための３，３′のＩｎＧａＰ層は拡散技術、液相成
長、気相成長などによって容易に形成できる。１，１′
のＧｅＳｉ混晶基板はＳｔ、およびＧｅにおいて既知の
工業的に完成しているバルク結晶成長法、例えば引上げ
法、フローティング・ゾーン法等によって容易に供給し
得る。又、用いるＧｅＳｉ混晶の面方位は（１００）ま
たは（１１１）が適当である。Cd, Mg, and Zn (preferably Zn) may be used. Furthermore, considering the mobility of electrons and the positive phase of the InGaP mixed crystal, it is desirable to emit light on the p side;
The impurity concentration of the InGaP layer is 1016 to 1o18/c
rn3, the impurity concentration of the p-type InGaP layer is 1015-1
o17/crn3 is suitable. Normally, it is easier to achieve a high impurity concentration with p-type, so light emission mainly occurs on the n-type InGaP side. The appropriate impurity concentration is 10 to 10/cIn.2,2
The 3,3' InGaP layer for forming the p-n junction can be grown easily by known methods such as liquid phase growth or vapor phase growth, and the 3,3' InGaP layer for forming the pn junction can be grown using diffusion techniques, liquid phase growth, vapor phase growth, etc. can be easily formed by 1,1'
The GeSi mixed crystal substrate of can be easily provided by industrially known bulk crystal growth methods for St and Ge, such as the pulling method, floating zone method, etc. Further, the plane orientation of the GeSi mixed crystal used is suitably (100) or (111).
以上説明したように本発明の発光素子用材料はＧｅＳｉ
混晶基板とｐｎ接合を有したＩｎＧａＰ混晶層からなり
、ＧｅＳｉ混晶基板の組成がＧｅのモル分率で０．５０
〜０．７０の範囲にあり、ＩｎＧａＰ混晶の組成がＧａ
Ｐのモル分率で０．５０〜０．７５の範囲でＧｅＳｉ混
晶基板上にＩｎＧａＰ混晶を格子整合した状態でエピタ
キシャル成長させたものであることにょシ、従来の傾斜
層を設けてなる材料よりも手間が省けて安価であり、こ
の材料を用いて光通信用発光ダイオード、レーザダイオ
ード、アバランシェ光ダイオードなどの発光素子を製造
した場合にその製造コストを下げることができる。As explained above, the light emitting device material of the present invention is GeSi
It consists of an InGaP mixed crystal layer having a pn junction with a mixed crystal substrate, and the composition of the GeSi mixed crystal substrate is 0.50 in molar fraction of Ge.
~0.70, and the composition of the InGaP mixed crystal is Ga
This material is made by epitaxially growing InGaP mixed crystal in a lattice-matched state on a GeSi mixed crystal substrate with a P mole fraction in the range of 0.50 to 0.75, and a conventional graded layer is provided. It is less labor-intensive and cheaper, and when light-emitting elements such as light-emitting diodes for optical communications, laser diodes, and avalanche photodiodes are manufactured using this material, the manufacturing cost can be lowered.
第１図は本発明の発光素子用材料の一実施例の断面図、
第２図はＩｎＧａＰ混晶およびＧｅ５ｔ混晶の混晶組成
と格子定数の関係を示すグラフである。第３図はプラス
チック光ファイバにおける波長と伝送損失との関係を示
すグラフである。
１・・・ｎ形ＧｅＳｉ混晶基板、１′・・・ｐ形ＧｅＳ
ｉ混晶基板、２ ＝ ｎ形Ｉ ｎＧａ Ｐ混晶層、２
／ 、、、 ｐ形ＩｎＧａＰ混晶層、３−ｐ形ＩｎＧａ
Ｐ混晶層、３ ／ 、、−ｎ形ＩｎＧａＰ混晶層。
Ｐｎ・・・ｐｎ接合。FIG. 1 is a cross-sectional view of an example of the material for a light emitting device of the present invention,
FIG. 2 is a graph showing the relationship between the mixed crystal composition and lattice constant of InGaP mixed crystal and Ge5t mixed crystal. FIG. 3 is a graph showing the relationship between wavelength and transmission loss in a plastic optical fiber. 1...n-type GeSi mixed crystal substrate, 1'...p-type GeS
i mixed crystal substrate, 2 = n-type InGaP mixed crystal layer, 2
/ ,,, p-type InGaP mixed crystal layer, 3-p-type InGa
P mixed crystal layer, 3/, -n-type InGaP mixed crystal layer. Pn... pn junction.
Claims (1)
ンジウムガリウム（ＩｎＧａＰ）層とからなり、該Ｉｎ
ＧａＰ層の混晶組成が燐化ガリウム（ＧａＰ）のモル分
率で０．５０〜０．７５でありＧｅＳｉ混晶基板と格子
整合し、該ＩｎＧａＰ層がｐｎ接合を有することを特徴
とする発光素子用材料。It consists of a germanium-silicon (GeSi) mixed crystal substrate and an indium gallium phosphide (InGaP) layer, and the In
A light emitting device characterized in that the GaP layer has a mixed crystal composition of 0.50 to 0.75 in mole fraction of gallium phosphide (GaP), is lattice matched to a GeSi mixed crystal substrate, and the InGaP layer has a pn junction. Materials for elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61226276A JPS6381990A (en) | 1986-09-26 | 1986-09-26 | Materials for light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61226276A JPS6381990A (en) | 1986-09-26 | 1986-09-26 | Materials for light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6381990A true JPS6381990A (en) | 1988-04-12 |
Family
ID=16842672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61226276A Pending JPS6381990A (en) | 1986-09-26 | 1986-09-26 | Materials for light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381990A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460939A2 (en) * | 1990-06-05 | 1991-12-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device comprising a SiGe single crystal substrate |
| US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
| KR100771999B1 (en) * | 2004-05-20 | 2007-10-31 | 김상돈 | Grating |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58191421A (en) * | 1982-05-04 | 1983-11-08 | Nec Corp | Substrate for growing compound semiconductor and manufacture of compound semiconductor |
-
1986
- 1986-09-26 JP JP61226276A patent/JPS6381990A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58191421A (en) * | 1982-05-04 | 1983-11-08 | Nec Corp | Substrate for growing compound semiconductor and manufacture of compound semiconductor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460939A2 (en) * | 1990-06-05 | 1991-12-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device comprising a SiGe single crystal substrate |
| US5164950A (en) * | 1990-06-05 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device comprising a sige single crystal substrate |
| US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
| KR100771999B1 (en) * | 2004-05-20 | 2007-10-31 | 김상돈 | Grating |
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