JPH0225094A - Manufacture of ceramic multilayer wiring board - Google Patents
Manufacture of ceramic multilayer wiring boardInfo
- Publication number
- JPH0225094A JPH0225094A JP17479888A JP17479888A JPH0225094A JP H0225094 A JPH0225094 A JP H0225094A JP 17479888 A JP17479888 A JP 17479888A JP 17479888 A JP17479888 A JP 17479888A JP H0225094 A JPH0225094 A JP H0225094A
- Authority
- JP
- Japan
- Prior art keywords
- binder
- wiring board
- green sheet
- paste
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011230 binding agent Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 31
- 239000010949 copper Substances 0.000 abstract description 18
- 229910052802 copper Inorganic materials 0.000 abstract description 17
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 2
- 239000004014 plasticizer Substances 0.000 abstract description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229960004643 cupric oxide Drugs 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 241000238876 Acari Species 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電子回路に用いられるセラミック多Ｂ配線基
板の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a ceramic multi-B wiring board used in electronic circuits.
［従来の技術］
近年、電子回路に対する小型化、高密度化、高速化の要
求はますます強くなっている。これに呼応して、配線基
板も片面配線から両面配線へ、さらに両面配線から多層
配線へと、配線密度の向上が図られてきた。なかでもセ
ラミック多層配線基板は、配線の高密度化が可能なので
、小型、高密度化が強（要求される場合に、多く採用さ
れている。[Prior Art] In recent years, demands for electronic circuits to be smaller, more dense, and faster have become stronger. In response to this, efforts have been made to improve the wiring density of wiring boards, from single-sided wiring to double-sided wiring, and from double-sided wiring to multilayer wiring. Among these, ceramic multilayer wiring boards are often used in cases where small size and high density are required because they allow high wiring density.
この皿のセラミック多層配線基板の配線パターンを形成
するのに用いられる導体材料として、これまで、タング
ステン（Ｗ）、モリブデン（ＭＯ）、白金（Ｐｔ）、金
（Ａｕ）、パラジウム（Ｐｄ）、銀（Ａ ｇ＞、ニッケ
ル（Ｎｉ）、銅（Ｃｕ）などが用いられているが、導電
性、耐マイグレーシ式ン性、材料価格等、様々な条件を
考え合わせた場合、銅が最も優れた導体材料であると言
える。The conductive materials used to form the wiring pattern of the ceramic multilayer wiring board of this plate have so far been tungsten (W), molybdenum (MO), platinum (Pt), gold (Au), palladium (Pd), silver (A g>), nickel (Ni), copper (Cu), etc. are used, but when considering various conditions such as conductivity, migration resistance, material price, etc., copper is the best conductor. It can be said that it is a material.
導体材料として、銅を用いたセラミック多層配線基板の
製造方法にはこれまで２つの方法があった。There have been two methods for manufacturing ceramic multilayer wiring boards using copper as a conductor material.
一つは導体の原材料に金属銅粉を主として用いたもので
、バインダ成分の分解と除去、導電ペーストの焼付け、
及びセラミック成分の焼結処理を兼ねる焼成工程は、中
性雰囲気中（一般には窒素中）で行なわれる。焼成を中
性雰囲気で行なう理由は、大気中では銅が酸化されて、
電気抵抗が極端に増大し、導体として役立たなくなるた
めである。One type mainly uses metallic copper powder as the raw material for the conductor, which requires decomposition and removal of the binder component, baking of the conductive paste,
The firing step, which also serves as sintering of the ceramic component, is performed in a neutral atmosphere (generally in nitrogen). The reason why firing is performed in a neutral atmosphere is that copper is oxidized in the atmosphere,
This is because the electrical resistance increases extremely, making it useless as a conductor.
もう一つは導体の原材料として酸化第二銅（Ｃｕｂ）を
用いたもので、焼成を熱処理の目的に応じて三段階に分
けて行う方法である。すなわち、まず第一段階として、
大気中で加熱を行い、絶な材料や導体材料に含まれてい
るバインダーを分解し、除去する。この時、導体の原材
料はもともと酸化銅なので酸化による間口は発生しない
。次の段階では、還元雰囲気中で加熱が行なわれる。こ
の段階で酸化銅が還元され、金Ｂ銅となる。そして、最
後の段階では、中性雰囲気中で焼成される。 （特開昭
６２−２５９７号）［発明が解決しようとする問題コ
前者の方法では、絶縁材料や導体材料に含まれるバイン
ダーを中性雰囲気中で除去す゛ることとなるが、中性雰
囲気中ではバインダの分解反応が著しく遅いため、これ
を除去するためには非常に長い時間（２４〜１２０時間
）と大量の窒素ガスを必要とする。このため、生産性が
悪く、生産コストが高いという欠点を持つ。The other method uses cupric oxide (Cub) as the raw material for the conductor, and the firing is performed in three stages depending on the purpose of the heat treatment. That is, as a first step,
Heating is performed in the atmosphere to decompose and remove binders contained in indestructible materials and conductive materials. At this time, since the raw material of the conductor is originally copper oxide, no openings due to oxidation occur. The next step involves heating in a reducing atmosphere. At this stage, copper oxide is reduced to become gold B copper. The final step is firing in a neutral atmosphere. (Unexamined Japanese Patent Publication No. 62-2597) [Problem to be solved by the invention: In the former method, the binder contained in the insulating material or conductive material is removed in a neutral atmosphere; Since the decomposition reaction of the binder is extremely slow, removing it requires a very long time (24 to 120 hours) and a large amount of nitrogen gas. For this reason, it has the drawbacks of poor productivity and high production costs.
後者の方法では上記の問題はないが、導体材料の原料と
して酸化第二銅を用いているために、これが還元して金
属銅となる時に体積が減少する。この結果、配線パター
ンの導体断面が粗になり、配線抵抗が高くなる七いう欠
点を生ずる。The latter method does not have the above problem, but since cupric oxide is used as the raw material for the conductor material, the volume decreases when it is reduced to metallic copper. As a result, the cross-section of the conductor in the wiring pattern becomes rough, resulting in a disadvantage that the wiring resistance increases.
そこで本発明は、前記従来の問題点を解決することを目
的とする。Therefore, the present invention aims to solve the above-mentioned conventional problems.
［問題を解決するための手段］
すなわち、前記目的を達成するため、本発明において採
用した手段の要旨は、金属銅粉末を主成分とする導電ペ
ーストを用いてグリーンシートに配線パターンを印刷し
たものを、弱酸化性雰囲気中で加熱して前記グリーンシ
ートと導電ペーストに含まれるバインダーを分解除去し
、その後、還元性界・囲気中で焼成することを特徴とす
るセラミック多層配線基板の製造方法である。[Means for solving the problem] In other words, the gist of the means adopted in the present invention to achieve the above object is to print a wiring pattern on a green sheet using a conductive paste containing metallic copper powder as a main component. is heated in a weakly oxidizing atmosphere to decompose and remove the binder contained in the green sheet and the conductive paste, and then fired in a reducing field/ambience. be.
［作 用］
前記本発明によれば、導体材料の原料に金属銅を主とし
て用いるために、配線抵抗の低いセラミック多層配線基
板を得ることができる。しかも、弱酸化雰囲気中でバイ
ンダの除去を行なうために、中性雰囲気中と比較して短
時間（５〜２４時間）でバインダが分解、除去される。[Function] According to the present invention, since metallic copper is mainly used as the raw material for the conductor material, it is possible to obtain a ceramic multilayer wiring board with low wiring resistance. Furthermore, since the binder is removed in a weakly oxidizing atmosphere, the binder is decomposed and removed in a shorter time (5 to 24 hours) than in a neutral atmosphere.
また、弱酸化雰囲気中でバインダの除去をおこなうため
、金Ｂ銅を主とする導体材料の酸化を最小限とすること
ができる。そして、最後に還元雰囲気中で焼成をおこな
うことにより、わずかに酸化していた配線パターンを形
成する導体材料が還元されて金Ｉｉｌ！Ｉ銅となる。Furthermore, since the binder is removed in a weakly oxidizing atmosphere, oxidation of the conductive material mainly made of gold, B, and copper can be minimized. Finally, by firing in a reducing atmosphere, the slightly oxidized conductor material forming the wiring pattern is reduced to gold! Becomes I copper.
なお、ここでいう弱酸化雰囲気中とはバインダの除去に
十分な酸素濃度であり、しかも金属銅の酸化を最小限と
する酸素濃度であり、具体的には酸素濃度が１００ｐＩ
） ｍ 〜１００００ｐ ｐ ｍの範囲が望ましい。酸
素濃度が１１００ｐｐ未満の場合は、バインダの分解除
去を短時間でおこなうには不十分な場合が多く、１００
００ｐＩ） ｍを超える場合は、金属銅の酸化を最小限
にすることができず、金属銅の酸化による体積増により
、基板にクラック等の不良が発生しやすい。Note that the weakly oxidizing atmosphere referred to here means an oxygen concentration sufficient to remove the binder, and also an oxygen concentration that minimizes oxidation of metal copper, specifically an oxygen concentration of 100 pI.
)m to 10,000 ppm is desirable. If the oxygen concentration is less than 1100pp, it is often insufficient to decompose and remove the binder in a short time;
If it exceeds 00 pI) m, oxidation of the metal copper cannot be minimized, and defects such as cracks are likely to occur in the substrate due to volume increase due to oxidation of the metal copper.
［実 施 例コ
次に、本発明の具体的な実施例について詳細に説明する
。[Example] Next, specific examples of the present invention will be described in detail.
（実施例１）
Ａ１２０３が４５ｗ ｔ％、Ｓ ｔ ０２が３５ｗ ｔ
％、Ｂ２Ｏ３が８ｗｔ％、ＣａＯが５ｗｔ％、ＭｇＯが
３．５Ｗ ｔ％、Ｃｒ２Ｏ３が３ｗｔ％、Ｌｉ２Ｏが０
．５ｗｔ％の組成からなるセラミック粉末に、ポリビニ
ルブチラールをトルエンとエタノールとの１対１の溶媒
に溶解したを機バインダと、ジブチルフタレートからな
る可塑剤と、オレイン酸からなる分散剤とを加え、これ
をポールミルで混合してセラミックスラリ−を作った。(Example 1) A1203 was 45 wt%, S t 02 was 35 wt%
%, B2O3 is 8wt%, CaO is 5wt%, MgO is 3.5Wt%, Cr2O3 is 3wt%, Li2O is 0
．． A binder made of polyvinyl butyral dissolved in a 1:1 ratio of toluene and ethanol, a plasticizer made of dibutyl phthalate, and a dispersant made of oleic acid were added to a ceramic powder having a composition of 5 wt%. A ceramic slurry was prepared by mixing in a pole mill.
次にこのスラリーを真空脱泡機で脱泡した後、ドクター
ブレード法により、前記セラミックスラリ−から厚さ２
５０μｍのグリーンシートを製作した。つぎに、このグ
リーンシートを所定の大きさに切断した後、必要な■所
に直径２００μｍのピアホールを形成した。Next, after degassing this slurry with a vacuum defoaming machine, a doctor blade method was used to remove the foam from the ceramic slurry to a thickness of 2 mm.
A 50 μm green sheet was produced. Next, this green sheet was cut into a predetermined size, and then pier holes with a diameter of 200 μm were formed at the required locations.
次に、金Ｂ銅粉（平均粒子径２．２μｍ）に、エチルセ
ルロースをテレピネオールで溶解した有機バインダを加
えて銅ペーストを作り、これを内部導体用ペーストとし
て用い、これをスクリーン印刷法によって前記グリーン
シートに印刷した。また表面導体用ペーストとして前記
ペーストにガラス粉末を添加したものを用い、これを同
様にしてグリーンシートに印刷した。なお、この印刷工
程において、前記ピアホールの内部にも銅ペーストが充
填される。Next, an organic binder made by dissolving ethyl cellulose in terpineol was added to gold B copper powder (average particle size 2.2 μm) to make a copper paste, and this was used as an internal conductor paste. printed on a sheet. Further, as a paste for the surface conductor, a paste prepared by adding glass powder to the above paste was used, and this was printed on a green sheet in the same manner. In addition, in this printing process, the inside of the said peer hole is also filled with copper paste.
その後、上記の様に配線パターンを印刷したグリーンシ
ートを所望枚数重ね合わせ、９０°Ｃ１２００Ｋ ｇ
／ ｃ ｍ”の圧力で熱圧若した。圧着後の断面図を第
１図に示す。同図において、■は、グリーンシート、２
は、内部導体ペースト、３は、ピアホールに充填された
導体ペースト、４は、外部導体ペーストである。After that, the desired number of green sheets with wiring patterns printed on them as described above were stacked together and heated at 90°C at 1200Kg.
/cm'' pressure.The cross-sectional view after pressure bonding is shown in Fig. 1. In the figure, ■ indicates green sheet, 2
3 is the inner conductor paste, 3 is the conductor paste filled in the peer hole, and 4 is the outer conductor paste.
次に、窒素ガスに空気を混合して酸素濃度が１０００ｐ
ｐ ｍとなる様に調整した弱酸化雰囲気中において、
１．５°Ｃ／ｍｉｎの温度勾配で室温から６５０°Ｃま
で昇温し、このまま６５０℃の揚程、で１時間保持した
後、−１Ｏ℃／ｒｎｉｎの温度勾配で６５０℃から室温
まで冷却し、脱バインダ処理を行なった。次に、窒素ガ
ス９６％と水素ガス４％を混合した還元雰囲気中におい
て、２０°Ｃ／ｍｉｎの温度勾配で室温から９２０℃ま
で昇温し、このまま９２０℃の温度で１０分間保持した
後−２０”Ｃ／ｍｉｎの温度勾配で９２０°Ｃから室温
まで冷却し、焼成した。この製造条件を、表１に示した
。Next, mix air with nitrogen gas until the oxygen concentration reaches 1000p.
In a weak oxidizing atmosphere adjusted so that p m,
The temperature was raised from room temperature to 650°C with a temperature gradient of 1.5°C/min, maintained at a lift of 650°C for 1 hour, and then cooled from 650°C to room temperature with a temperature gradient of -10°C/rnin. , the binder was removed. Next, in a reducing atmosphere containing a mixture of 96% nitrogen gas and 4% hydrogen gas, the temperature was raised from room temperature to 920°C with a temperature gradient of 20°C/min, and the temperature was maintained at 920°C for 10 minutes. It was cooled from 920° C. to room temperature and fired at a temperature gradient of 20”C/min. The manufacturing conditions are shown in Table 1.
以上の工程により作製されたセラミック多層基板の内部
の配線の抵抗値を測定したところ、１．９ｍΩ／口であ
った。また、目視観察の結果、クラック等の発生は認め
られず、さらに脱バインダが不十分な場合に多く起こる
絶縁不良もなかった。この結果を、表１に示した。When the resistance value of the internal wiring of the ceramic multilayer substrate produced by the above steps was measured, it was 1.9 mΩ/hole. Furthermore, as a result of visual observation, no cracks or the like were observed, and there were no insulation defects that often occur when binder removal is insufficient. The results are shown in Table 1.
（実施例２〜７） 表 １ 等の発生はなく、絶縁不良も無かった。(Examples 2 to 7) Table 1 There were no occurrences of such problems, and there were no insulation defects.
（実施例８〜１０）
内部導体ペーストの導体材料を金Ｂ銅粉から表２の組成
のものに各々変、え、それ以外は、実施例１と同様の条
件でセラミック多層配線基板を製作した。その結果、表
２に示したような内部の配線抵抗が得られた。また、ク
ラック等の発生はなく、絶縁不良もなかった。(Examples 8 to 10) Ceramic multilayer wiring boards were manufactured under the same conditions as in Example 1, except that the conductor material of the internal conductor paste was changed from gold, B, and copper powder to those with the compositions shown in Table 2. . As a result, internal wiring resistances as shown in Table 2 were obtained. Further, there were no occurrences of cracks, etc., and no insulation defects.
表 ２
実施例１と同様な方法で、脱バイダの時の酸素濃度と昇
温速度を表１の様に変え、それ以外は実施例１と同様な
条件でセラミック多層配線基板を製作した。その結果、
表１に示したような内部の配線抵抗が得られた。また、
タラツク（比較例１．２）
実施例１と同様な方法で、脱バイダの時の酸素濃度と昇
温速度を表３の様に変え、それ以外は実施例１と同様な
条件でセラミック多層配線基板を製作した。その結果、
酸素濃度を５０ｐｐｍとした比較例１では、脱バインダ
が不完全なため絶縁不良が生じた。また、酸素濃度を２
００００ｐｐｍとした比較例２では、配線部分に内部の
銅導体の酸化による体積増が原因とみられるクラックが
認められた。Table 2 Ceramic multilayer wiring boards were manufactured in the same manner as in Example 1, except that the oxygen concentration and temperature increase rate during binder removal were changed as shown in Table 1, and other conditions were the same as in Example 1. the result,
Internal wiring resistances as shown in Table 1 were obtained. Also,
Tarataku (Comparative Example 1.2) Ceramic multilayer wiring was fabricated using the same method as in Example 1, except that the oxygen concentration and temperature increase rate during debindering were changed as shown in Table 3, and the other conditions were the same as in Example 1. I made the board. the result,
In Comparative Example 1 in which the oxygen concentration was 50 ppm, insulation failure occurred due to incomplete binder removal. Also, increase the oxygen concentration to 2
In Comparative Example 2 where the concentration was 0,000 ppm, cracks were observed in the wiring portion, which appeared to be caused by an increase in volume due to oxidation of the internal copper conductor.
表 ３
（比較例３）
実施例１と同様な方法で、内部導体ペーストの導体材料
を金属銅粉から酸化第二銅粉に変え、それ以外は実施例
１と同様な条件でセラミック多層配線基板を製作した。Table 3 (Comparative Example 3) A ceramic multilayer wiring board was fabricated using the same method as in Example 1, except that the conductor material of the internal conductor paste was changed from metallic copper powder to cupric oxide powder, and the other conditions were the same as in Example 1. was produced.
その結果、表４に示された通り、内部の配線抵抗が５．
２ｍΩ／口と高かった。As a result, as shown in Table 4, the internal wiring resistance was 5.
It was high at 2 mΩ/mouth.
表 ４
［発明の効果コ
以上説明した通り、本発明のセラミック多層配線基板の
製造方法によれば、弱酸化性雰囲気中で脱バインダを行
なうことにより、脱パインダニ程の時間が短（て済むた
め生産性が高く、かつ、脱バインダが不十分なために生
ずる絶縁不良や、導体の酸化により生ずるクラック等の
発生がない。また、導体の原材料として金属銅を主成分
として用いるため、導体の配線抵抗が低（、優れた回路
基板が得られる。Table 4 [Effects of the Invention] As explained above, according to the method for manufacturing a ceramic multilayer wiring board of the present invention, by removing the binder in a weakly oxidizing atmosphere, the time required for removing the binder mites is shortened. Productivity is high, and there are no insulation defects caused by insufficient binder removal or cracks caused by oxidation of the conductor.In addition, since metallic copper is used as the main component as the raw material for the conductor, the wiring of the conductor is Low resistance (allows for an excellent circuit board.
第１図は、セラミック多層配線基板の中間工程品の一例
を示す断面図である。
１・・・グリーンシート ２・・・内部導体ペースト３
・・・ピアホールに充填された導電ペースト ４・・・
外部導体ペーストFIG. 1 is a sectional view showing an example of an intermediate process product of a ceramic multilayer wiring board. 1...Green sheet 2...Inner conductor paste 3
...Conductive paste filled in the peer hole 4...
outer conductor paste
Claims (2)
グリーンシートに配線パターンを印刷したものを、弱酸
化性雰囲気中で加熱して前記グリーンシートと導電ペー
ストに含まれるバインダーを分解、除去し、その後、還
元性雰囲気中で焼成することを特徴とするセラミック多
層配線基板の製造方法。(1) A green sheet with a wiring pattern printed using a conductive paste containing metallic copper powder as a main component is heated in a slightly oxidizing atmosphere to decompose and remove the binder contained in the green sheet and conductive paste. and then firing in a reducing atmosphere.
解、除去する熱処理工程を行なう弱酸化性雰囲気が、１
００ｐｐｍ以上、１００００ｐｐｍ以下の酸素濃度を有
する雰囲気であるセラミック多層配線基板の製造方法。(2) The weakly oxidizing atmosphere in which the heat treatment step for decomposing and removing the binder in claim 1 is
A method for manufacturing a ceramic multilayer wiring board in an atmosphere having an oxygen concentration of 00 ppm or more and 10000 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17479888A JPH0225094A (en) | 1988-07-13 | 1988-07-13 | Manufacture of ceramic multilayer wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17479888A JPH0225094A (en) | 1988-07-13 | 1988-07-13 | Manufacture of ceramic multilayer wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0225094A true JPH0225094A (en) | 1990-01-26 |
Family
ID=15984852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17479888A Pending JPH0225094A (en) | 1988-07-13 | 1988-07-13 | Manufacture of ceramic multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0225094A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05213679A (en) * | 1991-10-18 | 1993-08-24 | Internatl Business Mach Corp <Ibm> | Interface area between metal and ceramics in metal/ceramic substrate and formation method thereof |
| JPH06338214A (en) * | 1993-05-27 | 1994-12-06 | Nec Corp | Conductive paste for ceramic wiring board |
| JP2000124157A (en) * | 1998-08-10 | 2000-04-28 | Vacuum Metallurgical Co Ltd | FORMATION OF Cu THIN FILM |
| JP4691809B2 (en) * | 2001-03-23 | 2011-06-01 | 株式会社村田製作所 | Thick film circuit board and manufacturing method thereof |
-
1988
- 1988-07-13 JP JP17479888A patent/JPH0225094A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05213679A (en) * | 1991-10-18 | 1993-08-24 | Internatl Business Mach Corp <Ibm> | Interface area between metal and ceramics in metal/ceramic substrate and formation method thereof |
| JPH06338214A (en) * | 1993-05-27 | 1994-12-06 | Nec Corp | Conductive paste for ceramic wiring board |
| JP2000124157A (en) * | 1998-08-10 | 2000-04-28 | Vacuum Metallurgical Co Ltd | FORMATION OF Cu THIN FILM |
| JP4691809B2 (en) * | 2001-03-23 | 2011-06-01 | 株式会社村田製作所 | Thick film circuit board and manufacturing method thereof |
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