JPH0222831A - Thermal-expansion adjusting material for high-temperature use - Google Patents
Thermal-expansion adjusting material for high-temperature useInfo
- Publication number
- JPH0222831A JPH0222831A JP63172286A JP17228688A JPH0222831A JP H0222831 A JPH0222831 A JP H0222831A JP 63172286 A JP63172286 A JP 63172286A JP 17228688 A JP17228688 A JP 17228688A JP H0222831 A JPH0222831 A JP H0222831A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- alloy
- kovar
- thermal expansion
- clad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 37
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 27
- 239000000956 alloy Substances 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 229910017518 Cu Zn Inorganic materials 0.000 claims 1
- 229910017752 Cu-Zn Inorganic materials 0.000 claims 1
- 229910017770 Cu—Ag Inorganic materials 0.000 claims 1
- 229910017943 Cu—Zn Inorganic materials 0.000 claims 1
- 229910017985 Cu—Zr Inorganic materials 0.000 claims 1
- 229910001096 P alloy Inorganic materials 0.000 claims 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims 1
- 238000005219 brazing Methods 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 26
- 238000005253 cladding Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005097 cold rolling Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、パッケージ型半導体デバイスなどにおけるセ
ラミックス基板と封止部品との銀ろう付は接合などにお
いて、熱膨張差を具合よく整合させ得る熱膨張調整材に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for silver soldering between a ceramic substrate and a sealing component in a packaged semiconductor device, etc., using a thermal method that can suitably match the difference in thermal expansion. This invention relates to an expansion adjusting material.
［従来の技術］
例えばパッケージ型の半導体デバイスにおいては、第３
図に示すように、ＡＪ ２０３セラミツクス基板３を銀
ろう２により筐体１゛に接合し、前記セラミックス基板
３にパワー用ダイオードの如きＳｉチップ５を半田４に
より接合することが行なわれている。[Prior art] For example, in a packaged semiconductor device, the third
As shown in the figure, an AJ 203 ceramic substrate 3 is bonded to a housing 1'' by silver solder 2, and a Si chip 5 such as a power diode is bonded to the ceramic substrate 3 by solder 4.
この場合、筐体とセラミックス基板との銀ろう付けにお
いては、約４００〜９００℃の高温に加熱されるため、
Ａｌ２Ｏ３セラミックスと筐体との熱膨張の整合を得る
必要があり、筐体側の材料には一般にその熱膨張係数が
セラミックスに近いコバールのような低膨張性合金が使
用されている。In this case, silver brazing between the casing and the ceramic substrate is heated to a high temperature of about 400 to 900 degrees Celsius, so
It is necessary to match the thermal expansion between the Al2O3 ceramic and the casing, and a low expansion alloy such as Kovar, whose coefficient of thermal expansion is close to that of ceramics, is generally used as the material for the casing.
［発明が解決しようとする課題］
筐体であるコバールに上記ＡｊｚＯａセラミックスを銀
ろう付けする場合、コバール表面における銀ろう（Ａ＜
１−２８％ＣＵ合金など）との濡れ性が悪く、ろう付は
後の剥離などその信頼性にとかくの問題を残していた。[Problems to be Solved by the Invention] When silver-brazing the above AjzOa ceramics to Kovar, which is a housing, the silver solder (A<
1-28% CU alloy, etc.), and brazing left problems with reliability such as subsequent peeling.
本発明の目的は、上記した銀ろう付は上での懸念を解消
し、コバールの有するセラミックスとのずぐれな熱膨張
整合性をそのまま維持しつつろう付は性を大巾に改善し
た高温用熱膨張調整材を提供しようとするものである。The purpose of the present invention is to solve the above-mentioned concerns about silver brazing, and to achieve high-temperature brazing that greatly improves brazing properties while maintaining Kovar's excellent thermal expansion consistency with ceramics. The purpose is to provide a thermal expansion adjusting material.
［課題を解決するための手段］
本発明は、コバールの両面に銅又は銅合金をクラッドし
、銅・コバール・銅の厚さ比が２：１：２から好ましく
はｔ 二２００ ： ｔとくに必要あらば１：５００：
１の範囲となるように構成したものである。[Means for Solving the Problem] The present invention clads both sides of Kovar with copper or copper alloy, and the thickness ratio of copper, Kovar, and copper is preferably from 2:1:2 to 2200:t. Araba 1:500:
It is configured so that the range is 1.
［作用］
上記の構成比であれば、コバールの有するセラミックス
との熱膨張整合性を害することなく表面に銅層を有する
ことによるろう付は性の大巾な改善と安定化を達成する
ことができ、半導体デバイスとしての信頼性の向上に寄
与することができる。[Effect] With the above composition ratio, brazing properties can be greatly improved and stabilized by having a copper layer on the surface without impairing the thermal expansion compatibility with ceramics that Kovar has. This can contribute to improving the reliability of semiconductor devices.
［実施例］ 以下に、本発明について実施例を参照し説明する。[Example] The present invention will be described below with reference to Examples.
本発明においては、第１図に示すようにコバール（２８
〜３１％Ｎｉ、１２〜１４％Ｃｏ、残部ＦｅならびにＣ
を０．０２％以下、Ｓｉを０．２％以下、Ｍｎを０．８
％以下としてなる合金）１ａの両面に銅又は銅合金１ｂ
、ｌｂをクラッドし、熱膨張調整可能なりラッド材１に
構成する。In the present invention, Kovar (28
~31% Ni, 12-14% Co, balance Fe and C
0.02% or less, Si 0.2% or less, Mn 0.8%
% or less) Copper or copper alloy 1b on both sides of 1a
, lb is clad and configured as a rad material 1 with adjustable thermal expansion.
両面にクラッドするのは、加熱の際の反りを防止し熱的
安定性を確保するためである。The purpose of cladding on both sides is to prevent warping during heating and ensure thermal stability.
銅又は銅合金をクラッドするのは、Ａｌ２Ｏ３セラミッ
クス３と接合させる際に、銅が銀ろうとの濡れ性ならび
に接合性においてとくにすぐれているためである。すな
わち、第２図に示すように本発明に係るクラツド材１を
用いることにより銀ろう２が接するのはコバール１ａで
はなく銅層１ｂとなり、銅そのものとの銀ろう付けと変
るところがなく、安定かつすぐれた接合を得ることがで
きる。The reason why copper or a copper alloy is used for cladding is that copper has particularly excellent wettability and bondability with silver solder when bonded to Al2O3 ceramics 3. That is, as shown in FIG. 2, by using the clad material 1 according to the present invention, the silver solder 2 comes into contact with the copper layer 1b instead of the Kovar 1a, which is no different from silver brazing with copper itself, and is stable and Excellent bonding can be obtained.
第４図は、上記のようにして得た本発明に係るクラツド
材とＡｌ２Ｏ３セラミックスとの熱膨張量の温度による
変化を示す線図である。FIG. 4 is a diagram showing the change in the amount of thermal expansion of the cladding material according to the present invention obtained as described above and Al2O3 ceramics depending on the temperature.
第４図かられかるように、熱膨張の観点からみると、ク
ラツド材における銅の板厚比が小さいほどその熱膨張量
がセラミックスに近接してくることになる。しかし、銅
・コバール・銅の板厚比が１：２００：１（Ｃｕ被覆体
積率約１％）よりも小さくなると、銅の厚さが不足気味
となり、前記したろう付は性の改善がやや不十分となる
上、銅のずぐれた熱伝導性に基く熱放散能力も低下し好
ましくない、しかしながら、とくに必要性のある場合１
：５００：１（Ｃｕ被覆体積率約０．４％）まで小さく
することは可能である。As can be seen from FIG. 4, from the viewpoint of thermal expansion, the smaller the plate thickness ratio of copper in the cladding material, the closer the amount of thermal expansion will be to that of ceramics. However, when the plate thickness ratio of copper, Kovar, and copper becomes smaller than 1:200:1 (Cu coating volume ratio approximately 1%), the thickness of the copper tends to be insufficient, and the above-mentioned brazing has little improvement in properties. Not only is it insufficient, but the heat dissipation ability based on the excellent thermal conductivity of copper is also reduced, which is undesirable.However, especially when there is a need 1
:500:1 (Cu coating volume ratio about 0.4%) is possible.
上記の熱放散の意味からすれば、銅の板厚比は大きい方
が好ましいことになるが、第４図からもわかるように銅
の板厚比が大きくなると熱膨張量が次第に増大しセラミ
ックスとの整合性が悪くなる。From the above-mentioned meaning of heat dissipation, it is preferable that the copper plate thickness ratio is larger, but as can be seen from Figure 4, as the copper plate thickness ratio increases, the amount of thermal expansion gradually increases, and it is different from ceramics. consistency becomes worse.
従って、銅・コバール・銅の板厚比の上限としては２：
ｌ：２までが限度となるのである。Therefore, the upper limit of the thickness ratio of copper, Kovar, and copper is 2:
The limit is up to l:2.
なお、銅層については純銀であっても差支えはないが、
合金成分を２重量％以下添架したＣｕ −Ｓｎ合金、Ｃ
ｕ−Ａｇ合金、ｃｕ−Ｚｒ合金、Ｃｕ−Ｐ合金、ｃｕ−
ｚｎ合金あるいはＣｕ −Ａ、Ｉ！２０３複合材などを
用いれば、ろう付は性の改善と同時に耐熱性の改善をも
実現することができ、非常に好ましいということができ
る。As for the copper layer, there is no problem even if it is made of pure silver, but
Cu-Sn alloy with alloy components added in an amount of 2% by weight or less, C
u-Ag alloy, cu-Zr alloy, Cu-P alloy, cu-
zn alloy or Cu-A, I! If 203 composite material or the like is used, brazing can improve not only the properties but also the heat resistance, which is very preferable.
実施例１゜
冷間圧延圧接により銅層・コバール層・銅層の各板厚が
９．９ａｍ： １．９８ｍｍ： ９．９）ｔｍとなるよ
うにして銅・コバール・銅クラツド材（全板厚２．０＋
ｍ）を製作した。このクラツド材をメタルキャップに加
工し、これとＡｌ２Ｏ３セラミックスとをＡＱろう（Ａ
ｇ−２８％Ｃｕ合金）で接合してセラミックパッケージ
を組立てたところ、ろう付は性も良好でしかも室温に冷
却した後もＡｊ２０３セラミックスとの熱膨張差による
剥離もなく、良好なパッケージを得ることができた。Example 1 Copper/Kovar/Copper clad material (all plates) was made by cold rolling and welding so that the copper layer, Kovar layer, and copper layer each had a thickness of 9.9 am: 1.98 mm: 9.9) tm. Thickness 2.0+
m) was produced. This clad material is processed into a metal cap, and this and Al2O3 ceramics are bonded together using AQ brazing (AQ).
When a ceramic package was assembled by bonding with Aj203 ceramics (G-28% Cu alloy), the brazing properties were good, and even after cooling to room temperature, there was no peeling due to the difference in thermal expansion with Aj203 ceramics, and a good package was obtained. was completed.
実施例２６
耐熱性の複合材であるＣｕ−０，１％ＡｊｚＯａ複合材
（軟化温度６００℃）とコバールとを組合せ、第１図の
断面形状になるよう３層＃を造のクラツド材に冷間圧延
圧接した。さらに、８００℃で金属接合を十分にするた
めの拡散前、熱処理後、仕上圧延を行ない、全板厚が１
．０ｗ、
ｃｕ−Ａｊｚ Ｏ３・コバール・Ｃｕ−Ａ第２０３の板
厚比を０．０２：０．９６：０．０２としてなる本発明
に係るクラツド材を製作した。Example 26 A Cu-0.1% AjzOa composite material (softening temperature 600°C), which is a heat-resistant composite material, was combined with Kovar, and three layers # were cooled into a constructed clad material so as to have the cross-sectional shape shown in Fig. 1. It was rolled and welded. Furthermore, finish rolling was performed at 800℃ to ensure sufficient metal bonding before diffusion and after heat treatment, and the total plate thickness was reduced to 1.
．． A cladding material according to the present invention was manufactured in which the plate thickness ratio of 0w, cu-Ajz O3/Kovar/Cu-A No. 203 was 0.02:0.96:0.02.
このクラツド材をメタルキャ・ｙプに加工し、ＡｊｚＯ
３セラミックスとＡｇろう（Ａ（Ｊ −２８％Ｃｕ合金
）を用い温度９００℃で接合し、マルチレイヤー型のセ
ラミックパッケージに組立てた。This clad material is processed into a metal cap, and AjzO
3 ceramics and Ag solder (A (J-28% Cu alloy)) were bonded at a temperature of 900°C, and a multilayer ceramic package was assembled.
Ａｇろうによるろう付は性はきわめて良好で、しかも室
温に冷却してもＡＮｚＣ）３セラミツクスの熱膨張によ
る割れもなく、良好なパッケージを得ることができた。Brazing with Ag brazing properties was extremely good, and even after cooling to room temperature, there was no cracking due to thermal expansion of the ANzC)3 ceramic, and a good package could be obtained.
実施例３゜
２、Ｏｆｌ厚さのｃｕ−ｏ、ｔ％Ｚｒ合金素条と１．０
ｍ＋厚さのコバール合金素条と２．０ｆｌ厚さのｃｕ−
ｏ、ｔ％Ｚ「合金素条とを重ね合せ、冷間圧延圧接およ
び仕上圧延して、板厚２．０市の３層構造のクラツド材
を製作した。このクラツド材を金属基板としてこれに厚
さ１．０ａｍのＡＪ ２０ａセラミツクスをＡ（Ｊろう
（ＡＱ −２２％Ｃｕ−１８％Ｚｎ−５％Ｓｎ合金）を
用いて接合し、さらにＡｌ２Ｏ３セラミツクス上にパワ
ー用のＳｉダイードを半田付けして、第２図に示すよう
な構成よりなるデバイスを作製した。この場合、ＡＱろ
う付は温度７００℃から室温に冷却したが、Ａ１ｚＯ３
セラミックスの割れもなく良好な表面実装メタルを得る
ことができた。Example 3゜2, Ofl thickness cu-o, t% Zr alloy strip and 1.0
Kovar alloy strip of m+ thickness and cu- of 2.0fl thickness
o, t%Z "A clad material with a three-layer structure with a plate thickness of 2.0 mm was produced by overlapping the alloy material, cold rolling, welding, and finish rolling. This clad material was used as a metal substrate. AJ 20a ceramics with a thickness of 1.0 am were bonded using A (J solder (AQ -22%Cu-18%Zn-5%Sn alloy), and a power Si diode was further soldered onto the Al2O3 ceramics. A device with the configuration shown in Figure 2 was fabricated using the following methods.In this case, AQ brazing was performed by cooling from 700°C to room temperature;
It was possible to obtain a good surface mount metal without cracking the ceramic.
応用例１゜
上記実施例においては冷間圧延圧接により３層構造の銅
・コバール・銅クラツド材を製作したが、さらに板厚比
を１：５００：１と小さくし板厚を２、Ｏｒ＊ｗａとす
るような場合には、コバール合金に約４μｍ厚の銅を蒸
着法を含む気相法あるいは電気めっき法を用いて被着さ
せ製造することが可能である。Application example 1゜In the above example, a three-layer structure of copper/kovar/copper clad material was produced by cold rolling and welding, but the plate thickness ratio was further reduced to 1:500:1 and the plate thickness was 2.Or* In the case of a wa, it is possible to manufacture a Kovar alloy by depositing copper with a thickness of about 4 μm using a vapor phase method including a vapor deposition method or an electroplating method.
応用例２゜
上記実施例においてはコバール合金として２８〜３１％
Ｎｉ −Ｌ２〜１４％Ｃｏ−、０．０２％以下のＣ−０
，２％以下の５ｉ−０，８％以下のＭｎ−残部Ｆｅより
なる合金組成のものを用いたか、低膨張コバール合金（
２９，０〜２９．５％Ｎｉ −１３，Ｏ〜１３．５％Ｃ
ｏ−０，０２％以下のＣ−０，２％以下の５ｉ−０，８
％以下のＭｎ−残部Ｆｃからなる合金組成のもの）で線
膨張係数が３０℃〜４５０℃において４．０〜４．２Ｘ
１０４／’Ｃ（通常のコバール合金は４．５〜４．ｌＸ
ｌ０逼／℃である）の素材を利用することもできる。Application example 2゜In the above example, 28 to 31% as Kovar alloy
Ni-L2~14%Co-, 0.02% or less C-0
, 2% or less of 5i - 0.8% or less of Mn - balance Fe, or a low expansion Kovar alloy (
29,0~29.5%Ni -13,O~13.5%C
o-0,02% or less C-0,2% or less 5i-0,8
% or less) with a linear expansion coefficient of 4.0 to 4.2X at 30°C to 450°C.
104/'C (normal Kovar alloy is 4.5~4.1X
It is also possible to use a material with a temperature of l0/℃).
［発明の効果］
以上の通り、本発明によればつぎのようなすぐれた効果
を得ることができる。[Effects of the Invention] As described above, according to the present invention, the following excellent effects can be obtained.
（１１ＡＪ ２０３セラミツクスと熱膨張の傾きが類似
し、ろう付は温度９００℃から室温に冷却してもセラミ
ックスが割れたり剥離しなりするおそれのない熱膨張整
合性のある材料を得ることができる。(The slope of thermal expansion is similar to that of 11AJ 203 ceramics, and brazing can produce a material with thermal expansion matching that prevents the ceramic from cracking, peeling, or bending even when cooled from a temperature of 900°C to room temperature.
（２） 素材として非常に安価な銅およびコバール合
金を採用でき、安価な製品を工業的に製造することがで
きる。(2) Very inexpensive copper and Kovar alloy can be used as materials, and inexpensive products can be manufactured industrially.
（３） ！ｉＡ・コバール・銅クラツド材は、加工性
に優れ、Ａｇろう付けの信頼性が高く、製品の歩留りを
向上できる利点を有する。(3)! The iA Kovar copper clad material has the advantage of excellent workability, high reliability in Ag brazing, and the ability to improve product yield.
（４） ＃Ａ・コバール・別クラッド材の板厚構成比
を２：１：２〜１：２００：１さらに必要あれば１：５
００：１までも自由に変えることによって７００〜９０
０℃の高温における熱膨張を調整できる。(4) The plate thickness composition ratio of #A, Kovar, and other cladding materials is 2:1:2 to 1:200:1, and 1:5 if necessary.
700-90 by freely changing even 00:1
Thermal expansion at high temperatures of 0°C can be adjusted.
第１図は本発明に係るクラツド材の構成を示す断面図、
第２図は本発明に係るクラツド材をパッケージ用封止材
とし半導体を実装した様子を示す説明図、第３図は従来
のパッケージの実装状況を示す説明図、第４図は温度と
熱膨張との関係を示す線区である。
：熱膨張調整材、
２：銀ろう、
３ ：
セラミックス１．
５ ： ８１
チップ。FIG. 1 is a sectional view showing the structure of the cladding material according to the present invention;
Fig. 2 is an explanatory diagram showing how a semiconductor is mounted using the cladding material according to the present invention as a package sealing material, Fig. 3 is an explanatory diagram showing the mounting situation of a conventional package, and Fig. 4 is an explanatory diagram showing temperature and thermal expansion. This is a line section that shows the relationship between : thermal expansion adjusting material, 2: silver solder, 3: ceramics 1. 5: 81 chips.
Claims (2)
複合材よりなり、銅層・コバール層・銅層の比を２：１
：２（銅被覆体積率８０％）から１：５００：１（銅被
覆体積率０．４％）好ましくは１：２００；１（銅被覆
体積率１％）の範囲としてなる高温用熱膨張調整材。(1) Made of a three-layer composite material with copper or copper alloy coated on both sides of a Kovar plate, with a ratio of copper layer, Kovar layer, and copper layer of 2:1.
Thermal expansion adjustment for high temperature in the range of :2 (copper coating volume ratio: 80%) to 1:500:1 (copper coating volume ratio: 0.4%), preferably 1:200:1 (copper coating volume ratio: 1%) Material.
ｕ−Ｓｎ合金、Ｃｕ−Ａｇ合金、Ｃｕ−Ｚｒ合金、Ｃｕ
−Ｐ合金、Ｃｕ−Ｚｎ合金あるいはＣｕ−Ａｌ＿２Ｏ＿
３複合材を用いる請求項１記載の高温用熱膨張調整材。(2) C with an alloy component added in an amount of 2% by weight or less as a copper layer
u-Sn alloy, Cu-Ag alloy, Cu-Zr alloy, Cu
-P alloy, Cu-Zn alloy or Cu-Al_2O_
3. The high temperature thermal expansion adjusting material according to claim 1, which uses a composite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63172286A JPH0222831A (en) | 1988-07-11 | 1988-07-11 | Thermal-expansion adjusting material for high-temperature use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63172286A JPH0222831A (en) | 1988-07-11 | 1988-07-11 | Thermal-expansion adjusting material for high-temperature use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0222831A true JPH0222831A (en) | 1990-01-25 |
Family
ID=15939114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63172286A Pending JPH0222831A (en) | 1988-07-11 | 1988-07-11 | Thermal-expansion adjusting material for high-temperature use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222831A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6554178B1 (en) | 1999-04-08 | 2003-04-29 | Quallion Llc | Battery case feedthrough |
| US6716554B2 (en) | 1999-04-08 | 2004-04-06 | Quallion Llc | Battery case, cover, and feedthrough |
-
1988
- 1988-07-11 JP JP63172286A patent/JPH0222831A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6554178B1 (en) | 1999-04-08 | 2003-04-29 | Quallion Llc | Battery case feedthrough |
| US6716554B2 (en) | 1999-04-08 | 2004-04-06 | Quallion Llc | Battery case, cover, and feedthrough |
| US7108166B2 (en) | 1999-04-08 | 2006-09-19 | Quallion Llc | Method for sealing a battery case |
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