JPH02102550A - Thermal expansion adjusting material - Google Patents
Thermal expansion adjusting materialInfo
- Publication number
- JPH02102550A JPH02102550A JP25630588A JP25630588A JPH02102550A JP H02102550 A JPH02102550 A JP H02102550A JP 25630588 A JP25630588 A JP 25630588A JP 25630588 A JP25630588 A JP 25630588A JP H02102550 A JPH02102550 A JP H02102550A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- layer
- thermal expansion
- alloy
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 31
- 239000010949 copper Substances 0.000 claims abstract description 52
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910017770 Cu—Ag Inorganic materials 0.000 claims description 2
- 229910017518 Cu Zn Inorganic materials 0.000 claims 1
- 229910017752 Cu-Zn Inorganic materials 0.000 claims 1
- 229910017943 Cu—Zn Inorganic materials 0.000 claims 1
- 229910017985 Cu—Zr Inorganic materials 0.000 claims 1
- 229910001096 P alloy Inorganic materials 0.000 claims 1
- 229910001128 Sn alloy Inorganic materials 0.000 claims 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 26
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 229910052709 silver Inorganic materials 0.000 abstract description 7
- 239000004332 silver Substances 0.000 abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 abstract 1
- 150000003378 silver Chemical class 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 20
- 238000005253 cladding Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910000713 I alloy Inorganic materials 0.000 description 1
- 229910000796 S alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、パッケージ型半導体デバイスにおけるセラミ
ックス基板と封止部品との銀ろう付は接合などにおいて
、熱膨ｖＡ差を具合よく整合させ得る熱膨張調整材に関
するものである。Detailed Description of the Invention [Industrial Field of Application] The present invention provides a method for silver soldering between a ceramic substrate and a sealing component in a packaged semiconductor device using heat that can suitably match the difference in thermal expansion vA in bonding or the like. This invention relates to an expansion adjusting material.
［従来の技術Ｊ
例えばバヅケージ型の半導体デバイスにおいては、第４
図に示すように、ＡｊｚＯ３セラミックス基板３を銀ろ
う２により筐体１゛に接合し、前記セラミックス基板３
にパワー用ダイオードの如きＳｉチップ５を半田４によ
り接合することが行なわれている。[Prior art J For example, in a bug cage type semiconductor device, the fourth
As shown in the figure, an AjzO3 ceramics substrate 3 is bonded to a housing 1'' with silver solder 2, and the ceramics substrate 3
A Si chip 5 such as a power diode is bonded by solder 4 to the device.
この場合、筐体とセラミックス基板との銀ろう付けにお
いては、約８００〜９００℃の高温に加熱されるため、
ＡＪ２０３セラミックスと筐体との熱膨張の整合を得る
必要があり、筐体側の材料には一般にその熱Ｗ６張係数
がセラミックスに近いコバールやモリブデンが使用され
ているが、ジルコニウム（以下Ｚｒ）のような低膨張性
金属又は合金を使用することも試みられている。In this case, silver brazing between the casing and the ceramic substrate is heated to a high temperature of about 800 to 900 degrees Celsius, so
It is necessary to match the thermal expansion between AJ203 ceramics and the casing, and the material for the casing is generally Kovar or Molybdenum, whose thermal W6 tensile coefficient is close to that of ceramics. Attempts have also been made to use low expansion metals or alloys.
［発明が解決しようとする課題］
筐体として使用されるＺ「に上記ＡＪ２０３セラミック
スを銀ろう付けする場合、Ｚ「表面における銀ろう（Ａ
ａ−２８％ＣＵ合金など）との濡れ性が悪く、ろう付は
部が不安定となり信頼性に欠ける上、Ｚ「の熱膨張係数
がＡｊｚＯｓより小さいためろう付は後備ろう接合部に
大きな応力が残留し、ろう付は後の剥離のおそれを生じ
させるなどとかくの問題を残していた。[Problems to be Solved by the Invention] When silver brazing the above AJ203 ceramics to Z" used as a casing, silver soldering (A
A-28% CU alloy, etc.) has poor wettability, making the parts unstable during brazing and lacking in reliability. Furthermore, since the coefficient of thermal expansion of Z" is smaller than that of AjzOs, brazing causes large stress on the solder joints. remained, and brazing left problems such as the risk of peeling later.
本発明の目的は、上記した銀ろう付は上での懸念を解消
し、Ｚ「の有するセラミックスとのすぐれた熱膨張整合
性をそのまま維持しつつろう付は性を大巾に改善した熱
膨張調整材を提供しようとするものである。The purpose of the present invention is to solve the above-mentioned concerns by silver brazing, and to achieve a thermal expansion property that greatly improves brazing properties while maintaining the excellent thermal expansion compatibility with ceramics that Z" has. The aim is to provide a conditioning material.
［課題を解決するための手段］
本発明は、Ｚｒの両面に銅又は銅合金をクラッドし、銅
・Ｚ「 ・銅の厚さ比が２：１：２から１＝５００＋１
の範囲となるように構成したらのである。[Means for Solving the Problems] The present invention clads both sides of Zr with copper or a copper alloy, so that the thickness ratio of copper and Zr is from 2:1:2 to 1=500+1.
It is configured so that it falls within the range of .
［作用］
上記の構成比であれば、Ｚｒの有するセラミックスとの
熱膨張整合性を害することなく表面に銅層を有すること
によるろう付は性の大巾な改善と安定化を達成すること
ができ、半導体デバイスとしての代願性の向上に寄与す
ることができる。[Effect] With the above composition ratio, brazing properties can be greatly improved and stabilized by having a copper layer on the surface without impairing the thermal expansion compatibility with ceramics that Zr has. This can contribute to improving the applicability of semiconductor devices.
［実施例］ 以下に、本発明について実施例を参照し説明する。[Example] The present invention will be described below with reference to Examples.
本発明においては、第１図に示すようにＺｒ１ａの両面
にほぼ同じ厚さの銅又は銅合金ｔｂ。In the present invention, as shown in FIG. 1, copper or copper alloy tb is coated on both sides of Zr1a with approximately the same thickness.
１ｂをクラッドし、熱膨張調整可能なりラッド材１に構
成する。1b is clad and configured into a rad material 1 capable of adjusting thermal expansion.
両面にほぼ同じ厚さに久ラッドするのは、加熱の際の反
りを防止し熱的安定性を確保するためである。The reason for applying long rad to approximately the same thickness on both sides is to prevent warping during heating and ensure thermal stability.
銅又は銅合金をクラッドするのは、Ａｊ ２０３セラミ
ツクス３と接合させる際に、銅が銀ろうとの濡れ性なら
びに接合性においてとくにすぐれている上、熱伝導性に
もすぐれているなめである。The cladding is made of copper or a copper alloy because copper has particularly excellent wettability and bondability with silver solder when bonded to Aj 203 ceramics 3, and also has excellent thermal conductivity.
すなわち、本発明に係るクラツド材１を用いることによ
り銀ろう２が接するのは第４図の従来例のように２「で
はなく第２図に示すように銅層１ｂとなり、銅そのもの
との銀ろう付けと変るところがなく、良好な熱伝導性と
相俟って安定かつすぐれた接合を得ることができる。That is, by using the cladding material 1 according to the present invention, the silver solder 2 comes into contact with the copper layer 1b as shown in FIG. 2, rather than with the conventional example shown in FIG. It is no different from brazing, and combined with good thermal conductivity, it is possible to obtain a stable and excellent bond.
第３図は、上記のようにして得た本発明に係るクラツド
材とＡＪｚＯｓセラミックスとの熱ＩＩｊ張量の温度に
よる変化を示す線図である。FIG. 3 is a diagram showing the change in thermal IIj tensile strength of the clad material according to the present invention obtained as described above and AJzOs ceramics depending on the temperature.
第３図かられかるように、熱膨張の観点からみると、ク
ラツド材における銅の板厚比が小さいほどその熱膨張量
がセラミックスに近接してくることになる。しかし、銅
・Ｚ「・銅の板厚比が１：５００：１（Ｃｔｌ被覆体積
率約０．４％ンよりも小さくなると、銅の厚さが不足気
味となり、前記したろう付は性の改善がやや不十分とな
る上、銅のすぐれた熱伝導性に基く熱放散能力ら低下し
好ましくない。As can be seen from FIG. 3, from the viewpoint of thermal expansion, the smaller the plate thickness ratio of copper in the cladding material, the closer the amount of thermal expansion will be to that of ceramics. However, when the plate thickness ratio of copper/Z'/copper becomes smaller than 1:500:1 (Ctl coverage volume ratio of about 0.4%), the thickness of the copper becomes insufficient, and the above-mentioned brazing becomes difficult. This is not preferable because the improvement is somewhat insufficient and the heat dissipation ability based on copper's excellent thermal conductivity is degraded.
上記の熱放散の意味からすれば、銅のＷ、厚比は大きい
方が好ましいことになるが、第３図からもわかるように
銅の板厚比が大きくなると熱膨張量が次第に増大しセラ
ミックスとの整合性が悪くなる。From the above-mentioned meaning of heat dissipation, it is preferable that the copper W to thickness ratio be larger, but as can be seen from Figure 3, as the copper plate thickness ratio increases, the amount of thermal expansion gradually increases. The consistency with the
従って、銅・Ｚ「・銅の板厚比の上限としては２：１：
２までが限度となるのである。Therefore, the upper limit of the copper plate thickness ratio is 2:1:
The limit is up to 2.
なお、銅層については純銅であっても差支えはないが、
合金成分を２２１１％以下添架しなＣｕ −Ｓｎ合金、
Ｃｕ−Ａｇ合金、Ｃｕ−ｚｒ金合金Ｃｕ−ｐ合金、Ｃｕ
−Ｚｎ合金あるいはＣｕ −Ａ、Ｑ２０３複合材などを
用いれば、ろう付は性の改善と同時に耐熱性の改善をも
実現することができ、非常に好ましいということができ
る。Note that the copper layer may be made of pure copper, but
Cu-Sn alloy with alloy components not more than 2211% cross-linked;
Cu-Ag alloy, Cu-zr gold alloy, Cu-p alloy, Cu
If -Zn alloy, Cu-A, Q203 composite material, etc. are used, it is possible to improve brazing properties and heat resistance at the same time, which is very preferable.
実施例１゜
冷間圧延圧接により銅層・ｚｒ層・銅層の各板厚が１０
μｍ： １．９８ＩｌｌＩ： １０μｍとなるようにし
て銅・Ｚｒ ・銅クラツド材（全板厚２．０ｍｎ）を製
作した。このクラツド材をメタルキャップに加工し、こ
れとＡＪ２０３セラミックスとをＡＱろう（Ａｇ−２８
％ＣＵ合金）で接合してセラミックパッケージを組立て
たところ、ろう付は性も良好でしかも室温に冷却した後
も
Ａｊ ２０３セラミツクスとの熱膨張差によるＡｇろう
の剥離もなく、良好なパッケージを得ることができた。Example 1゜The copper layer, ZR layer, and copper layer each have a thickness of 10 mm by cold rolling and welding.
A copper/Zr/copper clad material (total thickness 2.0 mm) was manufactured so that μm: 1.98 IllI: 10 μm. This clad material is processed into a metal cap, and AQ brazing (Ag-28
When a ceramic package was assembled by bonding with Aj 203 ceramics, the brazing properties were good, and even after cooling to room temperature, there was no peeling of the Ag solder due to the difference in thermal expansion with Aj 203 ceramics, resulting in a good package. I was able to do that.
実施例２゜
耐熱性の複合材であるＣｕ−０，１％Ａ１ｚＯａ複合材
（軟化温度６００℃）とＺｒとを組合せ、第１図の断面
形状になるよう３層ｊｆＲ造のクラツド材に冷間圧延圧
接した。さらに、８００℃で金属接合を十分にするため
の拡散加熱処理後、仕上圧延を行ない、全板厚が１．０
鴎、
Ｃｕ Ａｊ ２０３ ・Ｚｒ −Ｃｕ −ＡＪ ２０
３の板厚比を０．０２：０．９６：０．０２としてなる
本発明に係るクラツド材を製作した。Example 2 A heat-resistant composite material, Cu-0.1%A1zOa composite material (softening temperature 600°C), was combined with Zr and cooled into a three-layer JFR cladding material so as to have the cross-sectional shape shown in Figure 1. It was rolled and welded. Furthermore, after diffusion heat treatment at 800℃ to ensure sufficient metal bonding, finish rolling is performed to reduce the total plate thickness to 1.0
Seagull, Cu Aj 203 ・Zr -Cu -AJ 20
A clad material according to the present invention was manufactured with a plate thickness ratio of 0.02:0.96:0.02.
このクラツド材をメタルキャップに加工し、ＡＪ２０３
セラミックスとＡｇろう（Ａａ −２８％Ｃｕ合金）を
用い温度９００℃で接合し、マルチレイヤー型のセラミ
ックパッケージに組立てた。This clad material is processed into a metal cap, and AJ203
Ceramics and Ag solder (Aa-28% Cu alloy) were bonded at a temperature of 900°C, and a multilayer ceramic package was assembled.
ＡＱろうによるろう付は性はきわめて良好で、しかも室
温に冷却してもＡＪ２０３セラミックスの熱膨張差によ
る割れもなく、Ａｇろうの剥離もみとめられず、良好な
パッケージを得ることができた。これを実装試験した結
果、熱抵抗の変動も少く良好な熱伝導性を示すことがわ
かった。The properties of brazing with AQ brazing were very good, and even after cooling to room temperature, there was no cracking due to the difference in thermal expansion of AJ203 ceramics, and no peeling of the Ag brazing was observed, making it possible to obtain a good package. As a result of mounting tests on this product, it was found that it exhibited good thermal conductivity with little variation in thermal resistance.
実施例３゜
１．０ｍ厚さのＣｕ−０，１％２「合金素条と１．０ｍ
厚さのＺ「素条と１．ＯＢ厚さのＣｕ −０，１％２「
合金素条とを３層に重ね合せ、冷間圧延圧接および仕上
圧延して、板厚１．０＋ｗｅの３層構造のクラツド材を
製作した。このクラツド材を金属基板としてこれに厚さ
１．０鴎のＡｊｚＯａセラミックスをＡｇろう（Ａ（Ｊ
−２２％Ｃｕ −１８％Ｚｎ−５％Ｓ口合金）を用い
て接合し、さらにＡＪ ２０３セラミツクス上にパワー
用のＳｉダイードを半田付けして、第２図に示すような
構成よりなるデバイスを作製した。この場合、ＡＱろう
付は温度７００℃から室温に冷却したが、ＡｊｚＯ３セ
ラミックスの割れもなく良好なろう付けを行なうことが
できた。これを実装試験した結果、熱による半田の疲労
もなく良好な表面実装メタル基板を得ることができた。Example 3 1.0m thick Cu-0.1%2 alloy strip and 1.0m thick
Thickness Z "Material and 1.OB thickness Cu -0,1%2"
A three-layer cladding material with a plate thickness of 1.0+WE was produced by stacking three layers of alloy strips, cold rolling, and finish rolling. This clad material was used as a metal substrate, and AjzOa ceramics with a thickness of 1.0 mm was coated with Ag wax (A(J
-22% Cu -18% Zn -5% S alloy), and a power Si diode was soldered onto the AJ 203 ceramics to form a device with the configuration shown in Figure 2. Created. In this case, AQ brazing was performed by cooling from a temperature of 700° C. to room temperature, but good brazing could be performed without cracking of the AjzO3 ceramics. As a result of mounting tests, it was possible to obtain a good surface-mount metal board without solder fatigue caused by heat.
応用例１゜
上記実施例においては冷間圧延圧接により３層構造の銅
・Ｚ「・銅クラツド材を製作したが、さらに板厚比を１
：５００：１と小さくし板厚を１．０ｍｍとするような
場合には、Ｚｒ板の両面に約２μｍ厚の銅を蒸着法を含
む気相法あるいは電気めっき法を用いて被着さぜ製造す
ることが可能であることがわかった。Application example 1゜In the above example, a three-layer structure of copper/Z"/copper clad material was produced by cold rolling welding, but the plate thickness ratio was further reduced to 1.
:500:1 and the plate thickness is 1.0 mm, copper with a thickness of approximately 2 μm is deposited on both sides of the Zr plate using a vapor phase method including vapor deposition method or an electroplating method. It turned out that it is possible to manufacture.
応用例２゜
上記実施例ではＺｒ板（純度９９．９０％以上）を利用
したが、Ｚｒ−１０％Ｃｕ合金（焼結材）を利用するこ
とにより銅被覆厚さを薄くし、しかも銅・Ｚｒ−１０％
Ｃｕ焼結圧延材・銅の接着性を良好ならしめた３層構造
のクラツド材を簡単に製造できることがわかった。Application example 2゜In the above example, a Zr plate (purity of 99.90% or more) was used, but by using a Zr-10% Cu alloy (sintered material), the thickness of the copper coating was reduced, and the thickness of the copper coating was reduced. Zr-10%
It has been found that it is possible to easily produce a three-layered cladding material with good adhesion between Cu sintered and rolled material and copper.
［発明の効果］
以上の通り、本発明によればつぎのようなすぐれた効果
を奏することができる。[Effects of the Invention] As described above, according to the present invention, the following excellent effects can be achieved.
（１）ＡＪ２０３セラミックスと熱膨張の傾きが類似し
、ろう付は温度９００℃から室温に冷却してもセラミッ
クスが割れたり剥離したりするおそれのない熱膨張整合
性のある材料を得ることができる。(1) The slope of thermal expansion is similar to that of AJ203 ceramics, and brazing can produce a material with thermal expansion consistency that does not cause the ceramic to crack or peel even when cooled from 900°C to room temperature. .
（２）銅・Ｚ「・銅クラツド材は、加工性が２「単体よ
りも改善され、Ａｇろう付けの信頼性が高く、パッケー
ジ部品として製品の歩留りを向上できる利点を有する。(2) Copper/Z'/Copper clad material has the advantage of improved workability compared to single material, high reliability of Ag brazing, and can improve the yield of products as package parts.
（３）銅・２「・銅クラツド材の板厚構成比を２：１：
２から１：５００：１まで自由に変えることによって７
００〜９００℃の高温における熱膨張を調整できる。(3) Copper 2" plate thickness composition ratio of copper clad material 2:1:
7 by changing freely from 2 to 1:500:1
Thermal expansion at high temperatures of 00 to 900°C can be adjusted.
（４）Ｚｒはコバールやモリブデンに比較して格段に安
価であり、その分原価低減を図ることができる。(4) Zr is much cheaper than Kovar or Molybdenum, and the cost can be reduced accordingly.
第１図は本発明に係るクラツド材の構成を示す断面図、
第２図は本発明に係るクラツド材をパッケージ用封止材
とし半導体を実装した様子を示す説明断面図、第３図は
温度と熱膨張との関係を示す線図、第４図は従来のパッ
ケージの実装状況を示す説明見取図である。
：熱膨張調整材、
１ａ：ジルコニウム、
■
：＃Ｉ又は銅合金、
：銀ろう、
３ ：
Ｊ
セラミックス、
二半田、
５ 二 Ｓｉ
チップ。FIG. 1 is a sectional view showing the structure of the cladding material according to the present invention;
Fig. 2 is an explanatory cross-sectional view showing how a semiconductor is mounted using the cladding material according to the present invention as a package sealing material, Fig. 3 is a diagram showing the relationship between temperature and thermal expansion, and Fig. 4 is a diagram showing the relationship between temperature and thermal expansion. FIG. 2 is an explanatory sketch showing the package implementation status. : thermal expansion adjusting material, 1a: zirconium, ■: #I or copper alloy, : silver solder, 3: J ceramics, 2 solder, 5 2 Si chip.
Claims (2)
合金を被覆した３層複合材よりなり、銅層・ジルコニウ
ム・銅層の比を２：１： ２（銅被覆体積率８０％）から１：５００：１（銅被覆
体積率０．４％）の範囲としてなる熱膨張調整材。(1) Made of a three-layer composite material in which both sides of a zirconium plate are coated with copper or copper alloy of approximately the same thickness, the ratio of copper layer, zirconium, and copper layer is 2:1:2 (copper coating volume ratio 80%) to 1:500:1 (copper coating volume ratio 0.4%).
ｕ−Ｓｎ合金、Ｃｕ−Ａｇ合金、Ｃｕ−Ｚｒ合金、Ｃｕ
−Ｐ合金、Ｃｕ−Ｚｎ合金あるいはＣｕ−Ａｌ＿２Ｏ＿
３複合材を用いてなる請求項１記載の熱膨張調整材。(2) C with an alloy component added in an amount of 2% by weight or less as a copper layer
u-Sn alloy, Cu-Ag alloy, Cu-Zr alloy, Cu
-P alloy, Cu-Zn alloy or Cu-Al_2O_
2. The thermal expansion adjusting material according to claim 1, comprising a three-component composite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25630588A JPH02102550A (en) | 1988-10-12 | 1988-10-12 | Thermal expansion adjusting material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25630588A JPH02102550A (en) | 1988-10-12 | 1988-10-12 | Thermal expansion adjusting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102550A true JPH02102550A (en) | 1990-04-16 |
Family
ID=17290817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25630588A Pending JPH02102550A (en) | 1988-10-12 | 1988-10-12 | Thermal expansion adjusting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102550A (en) |
-
1988
- 1988-10-12 JP JP25630588A patent/JPH02102550A/en active Pending
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