JPH02222145A - Cleaning method of semiconductor - Google Patents
Cleaning method of semiconductorInfo
- Publication number
- JPH02222145A JPH02222145A JP4234689A JP4234689A JPH02222145A JP H02222145 A JPH02222145 A JP H02222145A JP 4234689 A JP4234689 A JP 4234689A JP 4234689 A JP4234689 A JP 4234689A JP H02222145 A JPH02222145 A JP H02222145A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- resist
- nitric acid
- reaction products
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004140 cleaning Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007795 chemical reaction product Substances 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体製造工程であるドライエッチ後の洗浄方
法、特に多層配線工程の洗浄方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a cleaning method after dry etching, which is a semiconductor manufacturing process, and particularly to a cleaning method for a multilayer wiring process.
従来の技術
従来の方法として第４図に示しである。アルミ配線３の
上に層間絶縁膜１を形成し、ホト工程によりレジストパ
ターン２を形成する。次に、ドライエツチング技術を用
いて層間絶縁膜１を加工し、残ったレジストは酸素プラ
ズマを用いたアッシャ−で除去する。最後に発煙硝酸で
洗浄する。ここで、層間膜をドライエッチしていくとエ
ツチング時に形成される反応生成物５が側壁に堆積し、
マスク寸法の変化、次に堆積する膜のカバレッジ特性に
悲影響を与える
発明が解決しようとする課題
上記のような方法では、寸法が大きなときは良いが、寸
法が小さくなるにつれ、反応生成物５の影響を受けやす
い。アッシャで長時間処理スルコとにより生成物５を除
去しようとすると下地へのダメージが問題となる。本発
明はかがる点に鑑み、反応生成物をダメージレスで除去
する半導体装置の洗浄方法を提供することを目的とする
。Prior Art A conventional method is shown in FIG. An interlayer insulating film 1 is formed on the aluminum wiring 3, and a resist pattern 2 is formed by a photo process. Next, the interlayer insulating film 1 is processed using a dry etching technique, and the remaining resist is removed by an asher using oxygen plasma. Finally, clean with fuming nitric acid. Here, as the interlayer film is dry-etched, reaction products 5 formed during etching are deposited on the side walls.
Problems to be Solved by the Invention In the method described above, changes in mask dimensions have a negative effect on the coverage characteristics of the next deposited film.The method described above is good when the dimensions are large, but as the dimensions become smaller, the reaction products 5 susceptible to. If it is attempted to remove the product 5 by using an asher for a long time, damage to the base becomes a problem. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a method for cleaning a semiconductor device that removes reaction products without causing damage.
課題を解決するための手段
本発明は、発煙硝酸による洗浄工程と温水による洗浄工
程を含み、温水は７０’Ｃ以上の水温でウェハを浸して
洗浄する半導体装置の洗浄方法である。Means for Solving the Problems The present invention is a method of cleaning a semiconductor device, which includes a cleaning step with fuming nitric acid and a cleaning step with hot water, where the hot water is immersed in the wafer at a water temperature of 70'C or higher.
作用
本発明は前記した方法により、発煙硝酸により、ドライ
エッチ後に残っているレジストを酸化、除去し、温水洗
浄により反応生成物を除去する。According to the method described above, the resist remaining after dry etching is oxidized and removed using fuming nitric acid, and the reaction product is removed by washing with hot water.
実施例
第１図は本発明の実施例における半導体装置の洗浄方法
の工程図である。まず、第２図の工程図に従って洗浄前
までの半導体装置を作製する。シリコン基板４にスパッ
タ法でアルミ合金３を８００ｎｍ堆積し、次に層間絶縁
膜１としてプラズマＣＶＤ法でシリコン酸化膜を８００
ｎｍ堆積する。ホトリソグラフィーによりレジストのパ
ターンを形成後、ドライエッチ技術を用いてシリコン酸
化膜をパターンに従ってエツチングしていく。このとき
、エツチングガスであるＣＨＦ３とシリコン酸化膜、下
地であるアルミ合金が反応し、シリコン酸化膜側壁に堆
積物が形成される。この状態の半導体装置を第１図に従
い、レジスト除去、洗浄を行う。まず、酸素プラズマを
用いたドライ技術により基板表面のレジストを炭化させ
除去する。酸素プラズマで除去できない不純物、未反応
のレジストを発煙硝酸の酸化作用により分解除去する。Embodiment FIG. 1 is a process diagram of a method for cleaning a semiconductor device in an embodiment of the present invention. First, a semiconductor device before cleaning is manufactured according to the process diagram of FIG. 2. Aluminum alloy 3 is deposited to a thickness of 800 nm on a silicon substrate 4 by sputtering, and then a silicon oxide film of 800 nm is deposited as an interlayer insulating film 1 by plasma CVD.
nm deposited. After forming a resist pattern by photolithography, the silicon oxide film is etched according to the pattern using dry etching technology. At this time, the etching gas CHF3 reacts with the silicon oxide film and the underlying aluminum alloy, forming deposits on the side walls of the silicon oxide film. The semiconductor device in this state is subjected to resist removal and cleaning according to FIG. First, the resist on the surface of the substrate is carbonized and removed using a dry technique using oxygen plasma. Impurities that cannot be removed by oxygen plasma and unreacted resist are decomposed and removed by the oxidizing action of fuming nitric acid.
この発煙硝酸での洗浄は、液温は室温で、液をポンプで
循環させながら、途中にフィルタを通すととて液中のダ
ストを最小にさせるようにしている。In cleaning with fuming nitric acid, the liquid temperature is kept at room temperature, and while the liquid is circulated by a pump, it is passed through a filter midway through to minimize dust in the liquid.
水洗はクイックダンプリンスタイプの槽を用い、純水の
シャワーが基板面に均一に当たるようにすることで一部
の反応生成物を除去することができた。この段階ではま
だ反応生成物が残っているが次に７０℃以上の加熱した
純水につけることにより、反応生成物を完全に除去する
ことができた。実験の結果７０℃以下では反応生成物を
完全に除去することはできなかった。第３図に温水洗浄
する前後のＳＥＭ写真を示す。写真は直径１．２μｍの
ホールをドライエッチし７３℃の温水に５分つけておい
たものである。反応生成物のとれ方は水温と洗浄時間に
依存しており、温度が高い程、短時間で反応生成物を除
去できる傾向にある。以上のように、本実施例によれば
、７０℃以上の温水を用いることにより、ダメージを与
えることなく反応生成物を除去できる。A quick dump line type tank was used for water washing, and some of the reaction products could be removed by showering the substrate with pure water evenly. At this stage, reaction products still remained, but by next soaking in purified water heated to 70°C or higher, the reaction products could be completely removed. As a result of experiments, the reaction products could not be completely removed at temperatures below 70°C. Figure 3 shows SEM photographs before and after hot water washing. The photo shows a hole with a diameter of 1.2 μm that was dry-etched and soaked in hot water at 73°C for 5 minutes. How the reaction products are removed depends on the water temperature and washing time, and the higher the temperature, the faster the reaction products can be removed. As described above, according to this example, by using hot water of 70° C. or higher, reaction products can be removed without causing damage.
発明の詳細
な説明したように、本発明によれば、ドライエッチ時に
形成される反応生成物をイオン照射等のダメージを与え
ることなく除去することができ、その実用的効果は大き
い。As described in detail, according to the present invention, reaction products formed during dry etching can be removed without causing damage such as ion irradiation, and the practical effects thereof are significant.
第１図は本発明における一実施例の半導体装置の洗浄方
法を示す工程断面図、第２図は同実施例を行なうまでの
半導体装置製造工程断面図、第３図は同実施例前後での
半導体装置の斜視図、第４図は従来の半導体装置製造工
程図である。
１・・・・層間絶縁膜、５・・・・反応生成物、２・・
・・レジストパターン。
代理人の氏名 弁理士 粟野重孝 ほか１名憾
区
り
寸FIG. 1 is a process cross-sectional view showing a semiconductor device cleaning method according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the semiconductor device manufacturing process up to the implementation of the same embodiment, and FIG. FIG. 4, a perspective view of a semiconductor device, is a diagram of a conventional semiconductor device manufacturing process. 1... Interlayer insulating film, 5... Reaction product, 2...
...Resist pattern. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (2)
含むことを特徴とする半導体装置の洗浄方法。(1) A method for cleaning a semiconductor device, comprising a cleaning step using fuming nitric acid and a cleaning step using hot water.
ェハーを浸して、つづいて乾焼せることを特徴とする請
求項１記載の半導体装置の洗浄方法。(2) The method for cleaning a semiconductor device according to claim 1, wherein in the cleaning with hot water, the wafer is immersed in pure water at a water temperature of 70° C. or higher and then dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1042346A JP2678049B2 (en) | 1989-02-22 | 1989-02-22 | Semiconductor device cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1042346A JP2678049B2 (en) | 1989-02-22 | 1989-02-22 | Semiconductor device cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02222145A true JPH02222145A (en) | 1990-09-04 |
| JP2678049B2 JP2678049B2 (en) | 1997-11-17 |
Family
ID=12633465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1042346A Expired - Fee Related JP2678049B2 (en) | 1989-02-22 | 1989-02-22 | Semiconductor device cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678049B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05156302A (en) * | 1991-12-03 | 1993-06-22 | Fukuda Metal Foil & Powder Co Ltd | Production of high-purity silver powder |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60208881A (en) * | 1984-04-03 | 1985-10-21 | Fujitsu Ltd | Washing method |
| JPS6290935A (en) * | 1985-10-17 | 1987-04-25 | Matsushita Electric Ind Co Ltd | Cleaning device |
| JPS63133535A (en) * | 1986-11-25 | 1988-06-06 | Sony Corp | Cleaning |
-
1989
- 1989-02-22 JP JP1042346A patent/JP2678049B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60208881A (en) * | 1984-04-03 | 1985-10-21 | Fujitsu Ltd | Washing method |
| JPS6290935A (en) * | 1985-10-17 | 1987-04-25 | Matsushita Electric Ind Co Ltd | Cleaning device |
| JPS63133535A (en) * | 1986-11-25 | 1988-06-06 | Sony Corp | Cleaning |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05156302A (en) * | 1991-12-03 | 1993-06-22 | Fukuda Metal Foil & Powder Co Ltd | Production of high-purity silver powder |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2678049B2 (en) | 1997-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |