JPS63133535A - Cleaning - Google Patents
CleaningInfo
- Publication number
- JPS63133535A JPS63133535A JP28049286A JP28049286A JPS63133535A JP S63133535 A JPS63133535 A JP S63133535A JP 28049286 A JP28049286 A JP 28049286A JP 28049286 A JP28049286 A JP 28049286A JP S63133535 A JPS63133535 A JP S63133535A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- fuming nitric
- nitric acid
- cleaning
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 35
- 239000002253 acid Substances 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- -1 hydrogen ions Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 21
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 17
- 239000000243 solution Substances 0.000 abstract description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007853 buffer solution Substances 0.000 abstract description 6
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 239000000908 ammonium hydroxide Substances 0.000 abstract description 2
- 239000003925 fat Substances 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 239000003921 oil Substances 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、水を加えると酸になる洗浄液を用いて被洗浄
体を洗浄する洗浄方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a cleaning method for cleaning an object to be cleaned using a cleaning liquid that becomes an acid when water is added thereto.
本発明は、上記の様な洗浄方法において、洗浄の後に、
水素イオン濃度を上昇させることなく洗浄液を希釈させ
る液を用いて洗浄液を被洗浄体から除去することによっ
て、たとえ被洗浄体が酸に腐食され易い性質を有してい
ても、酸による腐食の発生を抑制しつつ被洗浄体を洗浄
することができる様にしたものである。The present invention provides, in the above-described cleaning method, after cleaning,
By removing the cleaning liquid from the object to be cleaned using a liquid that dilutes the cleaning liquid without increasing the hydrogen ion concentration, acid corrosion can be prevented even if the object to be cleaned has the property of being easily corroded by acid. This makes it possible to clean the object to be cleaned while suppressing the problem.
例えば半導体装置の製造工程では、工程間で半導体装置
に付着した塵埃や油脂等を除去するために、製造工程に
ある半導体装置を洗浄する。For example, in the manufacturing process of semiconductor devices, the semiconductor devices in the manufacturing process are cleaned in order to remove dust, oil, and the like that adhere to the semiconductor devices between processes.
ところで半導体装置には、酸に腐食され易し′ＩＡｌが
金属配線の材料として一般的に用いられている。Incidentally, in semiconductor devices, IAl, which is easily corroded by acid, is generally used as a material for metal wiring.
このために上述の洗浄においては、酸としての性質が弱
くしかも塵埃や油脂等を除去し得る濃硝酸である発煙硝
酸を主成分とする薬液中に浸漬することが一般的に行わ
れている。For this reason, in the above-mentioned cleaning, it is common practice to immerse the device in a chemical solution whose main component is fuming nitric acid, which is concentrated nitric acid that has weak acid properties and can remove dust, oil, and fats.
そして、洗浄後に半導体装置を純水でリンスすることに
よって半導体装置から薬液を除去し、更に、半導体装置
を乾燥させている。After cleaning, the semiconductor device is rinsed with pure water to remove the chemical from the semiconductor device, and the semiconductor device is further dried.
しかし、半導体装置の段差部の様にＡＩ配線の厚さが非
常に薄い部分では、上述の様な洗浄に伴ってＡＩ配線に
断線が生じていることがある。However, in a portion where the thickness of the AI wiring is very thin, such as a stepped portion of a semiconductor device, the AI wiring may be broken due to the above-mentioned cleaning.
これは、純水によるリンスによって発煙硝酸が希釈され
、この希釈によって強酸である希硝酸が瞬間的に生成さ
れ、この強酸によってＡＩ配線が腐食されたものと考え
られる。This is thought to be because the fuming nitric acid was diluted by rinsing with pure water, and diluted nitric acid, which is a strong acid, was instantaneously generated by this dilution, and the AI wiring was corroded by this strong acid.
本発明による洗浄方法は、水を加えると酸になる洗浄液
を用いて被洗浄体を洗浄した後に、水素イオン濃度を上
昇させることなく前記洗浄液を希釈させる液を用いて前
記洗浄液を前記被洗浄体から除去することを特徴として
いる。In the cleaning method according to the present invention, after cleaning an object to be cleaned using a cleaning liquid that becomes an acid when water is added, the cleaning liquid is applied to the object to be cleaned using a liquid that dilutes the cleaning liquid without increasing the concentration of hydrogen ions. It is characterized by being removed from.
本発明による洗浄方法では、水素イオン濃度を上昇させ
ることなく洗浄液を希釈させる液を用いて洗浄液を被洗
浄体から除去する様にしているので、この除去時に酸が
生成されることはなく、またその後に水を用いて上記の
液を被洗浄体から除去してもその際に酸が生成されるこ
とはない。In the cleaning method according to the present invention, the cleaning liquid is removed from the object by using a liquid that dilutes the cleaning liquid without increasing the hydrogen ion concentration, so that no acid is generated during this removal. Even if the liquid is subsequently removed from the object to be cleaned using water, no acid is produced at that time.
以下、ＡＩ配線が形成された半導体装置の洗浄に適用し
た本発明の一実施例を説明する。An embodiment of the present invention applied to cleaning a semiconductor device on which AI wiring is formed will be described below.
本実施例も、半導体装置に付着した塵埃や油脂等を除去
するために、発煙硝酸を主成分とする薬液を用いて半導
体装置を洗浄する点については、従来例と同様である。This embodiment is similar to the conventional example in that the semiconductor device is cleaned using a chemical solution containing fuming nitric acid as a main component in order to remove dust, oil, and the like adhering to the semiconductor device.
しかし本実施例では、上述の洗浄の後で且つ純水による
リンスの前に、水素イオン濃度を上昇させることなく発
煙硝酸を希釈させる液中に半導体装置を浸漬して、この
半導体装置から発煙硝酸を除去する。However, in this embodiment, after the above-mentioned cleaning and before rinsing with pure water, the semiconductor device is immersed in a solution that dilutes the fuming nitric acid without increasing the hydrogen ion concentration, and the fuming nitric acid is removed from the semiconductor device. remove.
そしてこの発煙硝酸の除去後に、従来例と同様に半導体
装置を純粋でリンスすることによって、上述の液を半導
体装置から除去する。After removing this fuming nitric acid, the semiconductor device is rinsed with pure water in the same manner as in the conventional example, thereby removing the liquid from the semiconductor device.
上述の様に水素イオン濃度を上昇させることなく発煙硝
酸を希釈させる液としては、緩衝溶液、アンモニア水等
のアルカリ溶液、アルコール等がある。As mentioned above, examples of liquids that dilute fuming nitric acid without increasing the hydrogen ion concentration include buffer solutions, alkaline solutions such as aqueous ammonia, and alcohol.
また緩衝溶液には、各種のものがあり、一般的にはリン
酸水素カリウムと水酸化ナトリウムとの溶液、塩化カリ
ウム液と塩酸との溶液等が使用されている。There are various types of buffer solutions, and generally a solution of potassium hydrogen phosphate and sodium hydroxide, a solution of potassium chloride solution and hydrochloric acid, etc. are used.
しかし半導体装置の製造プロセスでは、金属イオンが半
導体装置に付着するのを防止するために、リン酸や酢酸
等の酸と水酸化アンモニウム溶液等との混液を緩衝溶液
として用いることが好適である。そして所望のｐＩ（は
、それらの混合比を代えることによって選択することが
できる。However, in the manufacturing process of a semiconductor device, in order to prevent metal ions from adhering to the semiconductor device, it is preferable to use a mixed solution of an acid such as phosphoric acid or acetic acid and an ammonium hydroxide solution as a buffer solution. And the desired pI can be selected by changing their mixing ratio.
この様な本実施例では、緩衝溶液等で半導体装置から発
煙硝酸を除去する際に瞬間的にでも強酸が生成されるこ
とはない。また、発煙硝酸の除去後に、半導体装置を純
水でリンスしているので、このリンス時にも強酸が生成
されることはない。In this embodiment, strong acid is not generated even momentarily when fuming nitric acid is removed from a semiconductor device using a buffer solution or the like. Furthermore, since the semiconductor device is rinsed with pure water after the fuming nitric acid is removed, no strong acid is generated during this rinse.
従って本実施例では、洗浄に伴ってＡＩ配線が腐食して
断線するということは少ない。Therefore, in this embodiment, it is rare for the AI wiring to corrode and break due to cleaning.
本発明による洗浄方法では、洗浄に伴って酸が生成され
ることがない。従って、たとえ被洗浄体が酸に腐食され
易い性質を有していても、酸による腐食の発生を抑制し
つつ被洗浄体を洗浄することができる。In the cleaning method according to the present invention, acid is not generated during cleaning. Therefore, even if the object to be cleaned has a property of being easily corroded by acid, the object to be cleaned can be cleaned while suppressing the occurrence of corrosion by acid.
Claims (1)
する洗浄方法において、 前記洗浄の後に、水素イオン濃度を上昇させることなく
前記洗浄液を希釈させる液を用いて前記洗浄液を前記被
洗浄体から除去することを特徴とする洗浄方法。[Claims] A cleaning method in which an object to be cleaned is cleaned using a cleaning liquid that becomes an acid when water is added, wherein after the cleaning, a liquid that dilutes the cleaning liquid without increasing the concentration of hydrogen ions is used to clean the object. A cleaning method comprising removing a cleaning liquid from the object to be cleaned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28049286A JPS63133535A (en) | 1986-11-25 | 1986-11-25 | Cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28049286A JPS63133535A (en) | 1986-11-25 | 1986-11-25 | Cleaning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63133535A true JPS63133535A (en) | 1988-06-06 |
Family
ID=17625834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28049286A Pending JPS63133535A (en) | 1986-11-25 | 1986-11-25 | Cleaning |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133535A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02222145A (en) * | 1989-02-22 | 1990-09-04 | Matsushita Electric Ind Co Ltd | Cleaning method of semiconductor |
| JPH098043A (en) * | 1996-08-06 | 1997-01-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US6136767A (en) * | 1997-03-03 | 2000-10-24 | Micron Technology, Inc. | Dilute composition cleaning method |
| US6313048B1 (en) | 1997-03-03 | 2001-11-06 | Micron Technology, Inc. | Dilute cleaning composition and method for using same |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| CN104475390A (en) * | 2014-07-24 | 2015-04-01 | 如皋市易达电子有限责任公司 | Diode chip pickling technique and equipment |
-
1986
- 1986-11-25 JP JP28049286A patent/JPS63133535A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02222145A (en) * | 1989-02-22 | 1990-09-04 | Matsushita Electric Ind Co Ltd | Cleaning method of semiconductor |
| JPH098043A (en) * | 1996-08-06 | 1997-01-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US6596647B2 (en) | 1997-03-03 | 2003-07-22 | Micron Technology, Inc. | Dilute cleaning composition and method for using the same |
| US6313048B1 (en) | 1997-03-03 | 2001-11-06 | Micron Technology, Inc. | Dilute cleaning composition and method for using same |
| US6384001B2 (en) | 1997-03-03 | 2002-05-07 | Micron Technology, Inc. | Dilute cleaning composition |
| US6136767A (en) * | 1997-03-03 | 2000-10-24 | Micron Technology, Inc. | Dilute composition cleaning method |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US6831047B2 (en) | 2000-05-31 | 2004-12-14 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US7067466B2 (en) | 2000-05-31 | 2006-06-27 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US7067465B2 (en) | 2000-05-31 | 2006-06-27 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabricating |
| US7087561B2 (en) | 2000-05-31 | 2006-08-08 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| US7135444B2 (en) | 2000-05-31 | 2006-11-14 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| CN104475390A (en) * | 2014-07-24 | 2015-04-01 | 如皋市易达电子有限责任公司 | Diode chip pickling technique and equipment |
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