JPH0221296B2 - - Google Patents

Info

Publication number: JPH0221296B2
Authority: JP; Japan
Prior art keywords: plasma; processing; magnetic field; gas; cylindrical body
Prior art date: 1986-02-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP61021795A

Other languages

English (en)

Japanese (ja)

Other versions

JPS62180747A (ja

Inventor

Kojin Nakagawa

Noryoshi Sato

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NICHIDEN ANERUBA KK

Original Assignee

NICHIDEN ANERUBA KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-02-03

Filing date

1986-02-03

Publication date

1990-05-14

1986-02-03 Application filed by NICHIDEN ANERUBA KK filed Critical NICHIDEN ANERUBA KK

1986-02-03 Priority to JP61021795A priority Critical patent/JPS62180747A/ja

1987-08-08 Publication of JPS62180747A publication Critical patent/JPS62180747A/ja

1990-05-14 Publication of JPH0221296B2 publication Critical patent/JPH0221296B2/ja

Status Granted legal-status Critical Current

Links

238000012545 processing Methods 0.000 claims description 37
150000002500 ions Chemical class 0.000 claims description 14
239000000463 material Substances 0.000 claims description 12
239000000843 powder Substances 0.000 claims description 8
230000005469 synchrotron radiation Effects 0.000 claims description 7
BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 6
238000011282 treatment Methods 0.000 claims description 5
239000011810 insulating material Substances 0.000 claims description 3
241000269627 Amphiuma means Species 0.000 claims 1
239000007789 gas Substances 0.000 description 26
239000000758 substrate Substances 0.000 description 23
238000004381 surface treatment Methods 0.000 description 7
238000000034 method Methods 0.000 description 6
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
230000001133 acceleration Effects 0.000 description 4
229910052786 argon Inorganic materials 0.000 description 3
238000001816 cooling Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000005530 etching Methods 0.000 description 3
239000010408 film Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000012212 insulator Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
239000012495 reaction gas Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
239000010409 thin film Substances 0.000 description 2
108010014691 Lithostathine Proteins 0.000 description 1
102100027361 Lithostathine-1-alpha Human genes 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000010410 layer Substances 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
238000000427 thin-film deposition Methods 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges

JP61021795A 1986-02-03 1986-02-03 放電反応装置 Granted JPS62180747A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61021795A JPS62180747A (ja)	1986-02-03	1986-02-03	放電反応装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61021795A JPS62180747A (ja)	1986-02-03	1986-02-03	放電反応装置

Publications (2)

Publication Number	Publication Date
JPS62180747A JPS62180747A (ja)	1987-08-08
JPH0221296B2 true JPH0221296B2 (ko)	1990-05-14

Family

ID=12064987

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61021795A Granted JPS62180747A (ja)	1986-02-03	1986-02-03	放電反応装置

Country Status (1)

Country	Link
JP (1)	JPS62180747A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0719447B1 (en) *	1993-09-17	1998-07-22	Isis Innovation Limited	Rf plasma reactor
JPH07142463A (ja) *	1993-11-22	1995-06-02	Nec Corp	半導体装置の製造方法と製造装置
JP2012130825A (ja) *	2010-12-20	2012-07-12	Kagawa Univ	ナノ粒子の製造方法、ナノ粒子およびナノ粒子製造装置
JP6055721B2 (ja) *	2013-05-31	2016-12-27	フルード工業株式会社	粉体物性測定装置

1986
- 1986-02-03 JP JP61021795A patent/JPS62180747A/ja active Granted

Also Published As

Publication number	Publication date
JPS62180747A (ja)	1987-08-08

Legal Events

Date	Code	Title	Description
2004-04-27	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2005-05-10	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2006-02-03	EXPY	Cancellation because of completion of term

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