JPH05315269A - Forming method for thin film - Google Patents
Forming method for thin filmInfo
- Publication number
- JPH05315269A JPH05315269A JP3048193A JP3048193A JPH05315269A JP H05315269 A JPH05315269 A JP H05315269A JP 3048193 A JP3048193 A JP 3048193A JP 3048193 A JP3048193 A JP 3048193A JP H05315269 A JPH05315269 A JP H05315269A
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- JP
- Japan
- Prior art keywords
- substrate
- thin film
- gef4
- deposited
- film
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣＶＤ法により薄膜デ
バイスに用いるＧｅ、ＳｉＧｅ薄膜を基板上に堆積せし
めるようにした薄膜の製膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method for depositing a Ge or SiGe thin film used for a thin film device on a substrate by a CVD method.
【０００２】[0002]
【従来の技術およびその発明が解決しようとする問題
点】Ｇｅ、ＳｉＧｅの堆積薄膜は、太陽電池、光センサ
ー、薄膜トランジスタ等の薄膜デバイスに広く利用され
ている。これらの薄膜の製造法についてもいくつか提案
されており、真空蒸着法、イオンプレーテイング法、ス
パッタリング法、ＣＶＤ法等がよく知られている。2. Description of the Related Art Deposited thin films of Ge and SiGe are widely used in thin film devices such as solar cells, photosensors, and thin film transistors. Several methods for producing these thin films have been proposed, and vacuum deposition method, ion plating method, sputtering method, CVD method and the like are well known.
【０００３】特に、Ｇｅのエピタキシャル膜の形成に
は、気相エピタキシーと液相エピタキシーが挙げられる
が、一般に液相エピタキシーは高い結晶性が得られるも
のの膜厚が不均一で表面状態が悪くかつ量産性も悪いた
めあまり用いられない。In particular, formation of an epitaxial film of Ge includes vapor phase epitaxy and liquid phase epitaxy. In general, liquid phase epitaxy has high crystallinity but has a non-uniform film thickness and poor surface condition and mass production. It is not used very often because it has bad sex.
【０００４】一方、気相エピタキシーは、上記真空蒸着
法、イオンプレーテイング法、スパッタリング法、ＣＶ
Ｄ法等で行われるが、例えば、ＣＶＤ法においては、原
料物質の分解を誘起し、それを維持するために何らかの
エネルギーを供給する必要がある。プラズマＣＶＤ法に
おいては、プラズマ中の高エネルギー電子との衝突によ
って与えられ、熱ＣＶＤ法や光ＣＶＤ法においては、そ
れぞれ基板加熱や光照射によって与えられる。On the other hand, vapor phase epitaxy includes the above-mentioned vacuum deposition method, ion plating method, sputtering method and CV.
Although it is performed by the D method or the like, for example, in the CVD method, it is necessary to supply some energy in order to induce decomposition of the raw material and maintain it. In the plasma CVD method, it is given by collision with high-energy electrons in plasma, and in the thermal CVD method and the photo CVD method, it is given by substrate heating and light irradiation, respectively.
【０００５】しかしながら、これらの方法よる堆積膜の
形成において、エネルギーの供給手段そのものがその有
用性や実用性などを制限することが多い。熱ＣＶＤ法に
おいて、例えばＧｅ薄膜を堆積させる場合５００℃以上
の温度を必要とし、基板材料の選択が制限され装置その
ものも複雑化し工業的規模で生産される技術は確立され
ていない。However, in the formation of the deposited film by these methods, the energy supplying means itself often limits the usefulness and practicality. In the thermal CVD method, for example, when depositing a Ge thin film, a temperature of 500 ° C. or higher is required, the selection of the substrate material is limited, the apparatus itself becomes complicated, and a technique for industrial scale production has not been established.
【０００６】本発明の目的はＧｅ、ＳｉＧｅ薄膜の形成
において、物質のもつ物理的性質と化学的性質を考慮し
た出発原料の選択や作製プロセスの設計により、低温で
かつ均一な薄膜の合理的な作製技術を提供することにあ
る。The object of the present invention is to form a Ge and SiGe thin film at a low temperature and in a uniform ratio by selecting the starting material and designing the production process in consideration of the physical and chemical properties of the substance. It is to provide manufacturing technology.
【０００７】[0007]
【問題点を解決するための手段】本発明者らは、これら
の問題点について種々検討の結果、ＧｅＦ4 とシランガ
ス（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）とを反応させる
ことによりＧｅ、ＳｉＧｅ薄膜を堆積させる方法を見出
し本発明に到達した。The present inventors have problems To achieve the] a result of various investigations on these problems, GeF 4 and silane gas (Si n H 2n + 2, n is an integer of 1 to 3) is reacted with As a result, a method of depositing a Ge or SiGe thin film was found, and the present invention was reached.
【０００８】すなわち本発明は、基板温度が、２００〜
６００℃の温度範囲である加熱基板上に、ＧｅＦ4 とシ
ランガス（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）の混合ガ
スを供給することによりＧｅあるいはＳｉＧｅ薄膜を堆
積させることを特徴とする薄膜の製膜方法である。That is, according to the present invention, the substrate temperature is 200 to
A heating substrate which is a temperature range of 600 ° C., GeF 4 and silane gas (Si n H 2n + 2, n is an integer of 1 to 3), wherein the depositing a Ge or SiGe thin film by supplying a mixed gas of Is a method for forming a thin film.
【０００９】本発明は、基板温度が、２００〜６００℃
の温度範囲である加熱基板上に、ＧｅＦ4 とシランガス
（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）の混合ガスを供給
することによりＧｅ、ＳｉＧｅ薄膜を堆積させるもので
あるが、基板温度が２００℃より低い場合は、反応速度
が遅く熱分解が不十分となり膜の堆積が起こらず好まし
くない。また、６００℃以上になると原料ガスの分解が
起こり均一な膜の生成ができないため好ましくない。特
に、好ましくは３００〜４５０℃の範囲で反応させるの
が最適である。In the present invention, the substrate temperature is 200 to 600 ° C.
On a heated substrate which is the temperature range, GeF 4 and silane gas (Si n H 2n + 2, n is an integer of 1 to 3) Ge by supplying a mixed gas, but is intended to deposit a SiGe film, When the substrate temperature is lower than 200 ° C., the reaction rate is slow and the thermal decomposition is insufficient to cause film deposition, which is not preferable. Further, when the temperature is 600 ° C. or higher, the raw material gas is decomposed and a uniform film cannot be formed, which is not preferable. In particular, it is most preferable to react in the range of 300 to 450 ° C.
【００１０】本発明において、キャリアーガスは、必要
に応じてＨ2 、Ｎ2 、Ｈｅ、Ａｒを用いることもでき
る。本発明において、用いる基板材料としてＳｉまたは
Ｇｅ等の単結晶基板を用いることが好ましいが、その他
ガラス基板、Ｓｉ多結晶基板、Ｓｉアモルファス基板、
Ｇｅ多結晶基板、Ｇｅアモルファス基板等が用いられ、
これらに限定されるものではない。特にエピタキシャル
成長では、Ｇｅの堆積速度は基板の面方位に影響され
る。Ｓｉ基板の場合、（１００）面への堆積速度が高
く、次いで（１１０）面で、（１１１）面には殆ど堆積
しない。In the present invention, the carrier gas may be H 2 , N 2 , He or Ar, if necessary. In the present invention, it is preferable to use a single crystal substrate such as Si or Ge as the substrate material to be used, but other glass substrates, Si polycrystalline substrates, Si amorphous substrates,
Ge polycrystal substrate, Ge amorphous substrate, etc. are used,
It is not limited to these. Particularly in epitaxial growth, the Ge deposition rate is affected by the plane orientation of the substrate. In the case of a Si substrate, the deposition rate on the (100) plane is high, and then on the (110) plane, there is almost no deposition on the (111) plane.
【００１１】次に本発明において、シランガス（Ｓｉn
Ｈ2n+2，ｎは１〜３の整数）を導入することにより、Ｇ
ｅＦ4 からＧｅあるいはＳｉＧｅ薄膜を堆積させること
ができるが、条件の選択によりＳｉの混入あるいは合金
の生成を抑えＧｅエピタキシャル薄膜を堆積させること
ができることは極めて有益なことである。ＧｅＦ4 単独
あるいはキャリアーガスと共に分解反応させるだけでは
薄膜を堆積させることはできない。特に、Ｓｉ基板に堆
積させる場合、ＧｅＦ4 単独またはキャリアーガスと共
に導入するとＳｉ基板はエッチングされ、シランガス
（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）が存在しなけれ
ば、エッチングの起こりは大きくなり、その速度は数十
〜百Å／ｓとなる。Next, in the present invention, silane gas (Si n
H 2n + 2 , n is an integer of 1 to 3)
A Ge or SiGe thin film can be deposited from eF 4, but it is extremely useful to be able to deposit a Ge epitaxial thin film by suppressing the incorporation of Si or the formation of an alloy by selecting the conditions. A thin film cannot be deposited only by decomposing the GeF 4 alone or with a carrier gas. In particular, when deposited on the Si substrate, Si substrate is introduced along with GeF 4 alone or carrier gas is etched, if silane (Si n H 2n + 2, n is an integer of 1 to 3) is present, it occurs in the etching Becomes large, and the speed becomes several tens to one hundred Å / s.
【００１２】本発明において、用いられるＧｅＦ4 とシ
ランガス（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）との量の
割合は、成膜条件等により異なるが、流量比〔シランガ
ス（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）／ＧｅＦ4 〕は
０．５〜２０が適当であり、好ましくは０．５〜１０と
するのが望ましい。また、堆積薄膜の堆積速度は、シラ
ンガス（Ｓｉn Ｈ2n+2，ｎは１〜３の整数）の分圧が高
くなるほど、また基板温度が高くなるほど高くなる。In the present invention, the ratio of the amounts of GeF 4 and silane gas (Si n H 2n + 2 , n being an integer of 1 to 3) used varies depending on the film forming conditions and the like, but the flow rate ratio [silane gas (Si n H 2n + 2, n is an integer of 1 to 3) / GeF 4] is suitably from 0.5 to 20 is preferably is desirably 0.5 to 10. Further, the deposition rate of the deposited film, the more the partial pressure of silane gas (Si n H 2n + 2, n is an integer of 1 to 3) is increased, also the higher the substrate temperature increases.
【００１３】本発明において、Ｇｅ堆積薄膜等の堆積方
法は低圧ＣＶＤ法のみならず、高真空蒸着法等も利用で
きる。圧力は、一般に低圧下が望ましいが、希釈率を考
慮すれば大気圧でも十分堆積が可能で圧力範囲について
は、特に制限されない。In the present invention, not only the low pressure CVD method but also the high vacuum vapor deposition method can be used as the deposition method for the Ge deposited thin film and the like. Generally, the pressure is preferably low pressure, but considering the dilution ratio, sufficient deposition is possible even at atmospheric pressure, and the pressure range is not particularly limited.
【００１４】[0014]
【実施例】以下、実施例によって本発明を詳細に説明す
るが、これらにより限定されるものではない。The present invention will be described in detail below with reference to examples, but the present invention is not limited thereto.
【００１５】実施例 １ 図１に示した基板ホルダー３にＳｉ単結晶基板を取付
け、排気系４を介して１０-6Ｔｏｒｒ以下に減圧した。
ノズル２と基板との距離は４０ｍｍである。内蔵された
ヒーターにより基板を３７５℃に加熱し保持した。基板
温度が安定した後、ガス導入管１を経てノズル２よりＧ
ｅＦ4 ５ｓｃｃｍ、ＳｉＨ4 ３０ｓｃｃｍを導入し、さ
らにＨｅを導入して全圧を５２０ｍＴｏｒｒになるよう
保持し、Ｇｅエピタキシャル薄膜を堆積させた。このと
きの成膜速度は１Å／ｓであった。この堆積膜をＸ線光
電子分光法、ラマン分光法、Ｘ線回折および電子線回折
法によるＲＨＥＥＤパターンにより分析した結果、（１
００）面のＧｅエピタキシャル薄膜であった。Example 1 A Si single crystal substrate was attached to the substrate holder 3 shown in FIG. 1, and the pressure was reduced to 10 −6 Torr or less through an exhaust system 4.
The distance between the nozzle 2 and the substrate is 40 mm. The substrate was heated to and held at 375 ° C. by the built-in heater. After the substrate temperature is stabilized, G is passed from the nozzle 2 through the gas introduction pipe 1.
Introducing 5 sccm of eF 4 and 30 sccm of SiH 4 , and further introducing He to maintain the total pressure at 520 mTorr to deposit a Ge epitaxial thin film. The film forming rate at this time was 1 Å / s. The deposited film was analyzed by RHEED pattern by X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction and electron beam diffraction.
It was a Ge epitaxial thin film having a (00) plane.
【００１６】実施例 ２ ＳｉＯ2 でパターニングしたＳｉ（１００）基板を用
い、実施例１と同じ条件で調整し、基板温度が安定した
後、ノズル２よりＧｅＦ4 ５ｓｃｃｍ、ＳｉＨ4３０ｓ
ｃｃｍを導入し、さらにＨｅを導入して全圧を５２０ｍ
Ｔｏｒｒになるよう保持し、Ｇｅ薄膜を堆積させた。こ
の堆積膜をＸ線光電子分光法、ラマン分光法、Ｘ線回折
および電子線回折法によるＲＨＥＥＤパターン、走査型
電子顕微鏡により分析した結果、ＳｉＯ2 上には膜の堆
積がみられずＳｉ（１００）面上に選択的にＧｅエピタ
キシャル薄膜の堆積が認められた。Example 2 A Si (100) substrate patterned by SiO 2 was used, adjusted under the same conditions as in Example 1, and after stabilizing the substrate temperature, GeF 4 5 sccm and SiH 4 30 s from nozzle 2.
ccm is introduced, and He is further introduced so that the total pressure is 520 m.
The Ge thin film was deposited while holding it at Torr. The deposited film was analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, RHEED pattern by X-ray diffraction and electron beam diffraction, and a scanning electron microscope. As a result, no deposition of the film was observed on SiO 2 and Si (100 ) Surface was selectively deposited with Ge epitaxial thin film.
【００１７】実施例３ 実施例１と同じ条件で調整し、基板温度が安定した後、
ノズル２よりＧｅＦ4３０ｓｃｃｍ、ＳｉＨ4 ３０ｓｃ
ｃｍを導入し、さらにＨｅを導入して全圧を５２０ｍＴ
ｏｒｒになるよう保持し、Ｇｅエピタキシャル薄膜を堆
積させた。このときの成膜速度は０．５Å／ｓであっ
た。この堆積膜をＸ線光電子分光法、ラマン分光法、Ｘ
線回折および電子線回折法によるＲＨＥＥＤパターンに
より分析した結果、（１００）面のＧｅエピタキシャル
薄膜であった。Example 3 After adjusting under the same conditions as in Example 1 and stabilizing the substrate temperature,
GeF 4 30 sccm from the nozzle 2, SiH 4 30sc
cm and then He to bring the total pressure to 520 mT.
The Ge epitaxial thin film was deposited while holding it at orr. The film forming rate at this time was 0.5 Å / s. This deposited film is subjected to X-ray photoelectron spectroscopy, Raman spectroscopy, X
As a result of analysis by a RHEED pattern by a line diffraction method and an electron diffraction method, it was a Ge epitaxial thin film having a (100) plane.
【００１８】実施例 ４ ＳｉＯ2 でパターニングしたＳｉ（１００）基板を用
い、実施例１と同じ条件で調整し、基板温度が安定した
後、ノズル２よりＧｅＦ4 １．５ｓｃｃｍ、Ｓｉ 2Ｈ6
１５ｓｃｃｍを導入し、さらにＨｅを導入して全圧を４
２０ｍＴｏｒｒになるよう保持し、Ｇｅ薄膜を堆積させ
た。このときの成膜速度は６．５Å／ｓであった。この
堆積膜をＸ線光電子分光法、ラマン分光法、Ｘ線回折お
よび電子線回折法によるＲＨＥＥＤパターン、走査型電
子顕微鏡により分析した結果、Ｓｉ基板上に選択成長が
見られ成長したＧｅは（４００）面配向のエピタキシャ
ル薄膜であった。Example 4 SiO2Uses Si (100) substrate patterned by
The substrate temperature was stabilized by adjusting under the same conditions as in Example 1.
After that, GeF from nozzle 2Four1.5 sccm, Si 2H6
Introduce 15 sccm and further introduce He to bring the total pressure to 4
Hold to 20 mTorr and deposit Ge thin film
It was The film formation rate at this time was 6.5 Å / s. this
X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction and X-ray diffraction
And RHEED pattern by electron diffraction method, scanning electron
As a result of analysis with a child microscope, selective growth on the Si substrate
Seen and grown Ge is epitaxy with (400) plane orientation.
It was a thin film.
【００１９】実施例 ５ ガラス基板を用いて実施例１と同じ条件で調整し、基板
温度を４２０℃に保持し安定した後、ノズル２よりＧｅ
Ｆ4 １０ｓｃｃｍ、Ｓｉ2 Ｈ6 ３０ｓｃｃｍを導入し、
さらにＨｅを導入して全圧を６００ｍＴｏｒｒになるよ
う保持し、Ｇｅ薄膜を堆積させた。このときの成膜速度
は５０Å／ｓであった。この堆積膜をＸ線光電子分光
法、ラマン分光法、Ｘ線回折および電子線回折法による
ＲＨＥＥＤパターンにより分析した結果、Ｇｅ多結晶薄
膜であった。Example 5 A glass substrate was used and adjusted under the same conditions as in Example 1, and after the substrate temperature was kept stable at 420 ° C. and stabilized, Ge was discharged from the nozzle 2.
Introducing F 4 10sccm and Si 2 H 6 30sccm,
He was further introduced to maintain the total pressure at 600 mTorr, and a Ge thin film was deposited. The film forming rate at this time was 50 Å / s. The deposited film was analyzed by RHEED pattern by X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction and electron diffraction, and as a result, it was a Ge polycrystalline thin film.
【００２０】実施例 ６ 基板ホルダー３にＳｉのアモルファス基板を取付け、排
気系４を介して１０-6Ｔｏｒｒ以下に減圧した。ノズル
２と基板との距離は４０ｍｍである。内蔵されたヒータ
ーにより基板を３５０℃に加熱し保持した。基板温度が
安定した後、ノズル２よりＧｅＦ4 ５ｓｃｃｍ、ＳｉＨ
4 ２０ｓｃｃｍを導入し、さらにＨｅを導入して全圧を
５５０ｍＴｏｒｒになるよう保持し、Ｇｅエピタキシャ
ル薄膜を堆積させた。このときの成膜速度は０．６Å／
ｓであった。この堆積膜をＸ線光電子分光法、ラマン分
光法、Ｘ線回折および電子線回折法によるＲＨＥＥＤパ
ターンにより分析した結果、（１００）面のＧｅ多結晶
薄膜であった。Example 6 An amorphous Si substrate was attached to the substrate holder 3, and the pressure was reduced to 10 −6 Torr or less through the exhaust system 4. The distance between the nozzle 2 and the substrate is 40 mm. The substrate was heated to and held at 350 ° C. by the built-in heater. After the substrate temperature was stabilized, GeF 4 5sccm, SiH
After introducing 20 sccm and further introducing He, the total pressure was kept at 550 mTorr and a Ge epitaxial thin film was deposited. The deposition rate at this time is 0.6Å /
It was s. The deposited film was analyzed by RHEED pattern by X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction and electron diffraction, and as a result, it was a Ge polycrystal thin film of (100) plane.
【００２１】実施例 ７ 実施例１と同じ条件で調整し、内蔵されたヒーターによ
り基板を４２０℃に加熱し保持した。基板温度が安定し
た後、ノズル２よりＧｅＦ4 ２．７ｓｃｃｍ、Ｓｉ2 Ｈ
6 ３０ｓｃｃｍを導入し、さらにＨｅを導入して全圧を
６００ｍＴｏｒｒになるよう保持し、薄膜を堆積させ
た。このときの成膜速度は４５Å／ｓであった。この堆
積膜をＸ線光電子分光法、ラマン分光法、Ｘ線回折およ
び電子線回折法により分析した結果、ＳｉＧｅ多結晶薄
膜であった。Example 7 The substrate was adjusted to the same conditions as in Example 1 and the substrate was heated to 420 ° C. by a built-in heater and held. After the substrate temperature is stabilized, GeF 4 2.7 sccm, Si 2 H is discharged from the nozzle 2.
A thin film was deposited by introducing 630 sccm and further introducing He to maintain the total pressure at 600 mTorr. The film forming rate at this time was 45 Å / s. The deposited film was analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction and electron diffraction to find that it was a SiGe polycrystalline thin film.
【００２２】比較例 １ 実施例１と同じ条件で調整し、基板温度が安定した後、
ノズル２よりＧｅＦ4３０ｓｃｃｍを導入し、さらにＨ
ｅを導入して全圧を５２０ｍＴｏｒｒになるよう保持
し、Ｇｅエピタキシャル薄膜の堆積を試みたが、基板上
には堆積膜は確認できなかった。このときＳｉ基板はエ
ッチングされていた。Comparative Example 1 After adjusting under the same conditions as in Example 1 and stabilizing the substrate temperature,
GeF 4 30sccm was introduced from nozzle 2, and further H
An attempt was made to deposit a Ge epitaxial thin film by introducing e and maintaining the total pressure at 520 mTorr, but no deposited film could be confirmed on the substrate. At this time, the Si substrate was etched.
【００２３】[0023]
【発明の効果】本発明の方法によれば、ＧｅあるいはＳ
ｉＧｅ堆積膜を従来の方法よりも低温でかつ複雑な製造
設備を必要とせずに形成することを可能にした。According to the method of the present invention, Ge or S
It has made it possible to form iGe deposited films at lower temperatures than conventional methods and without the need for complicated manufacturing equipment.
【図１】本発明に用いた薄膜堆積装置の概略図を示す。FIG. 1 shows a schematic view of a thin film deposition apparatus used in the present invention.
１．ガス導入管 ２．ノズル ３．基板ホルダー ４．排気系 1. Gas inlet pipe 2. Nozzle 3. Substrate holder 4. Exhaust system
Claims (1)
である加熱基板上に、ＧｅＦ4 とシランガス（Ｓｉn Ｈ
2n+2，ｎは１〜３の整数）の混合ガスを供給することに
よりＧｅあるいはＳｉＧｅ薄膜を堆積させることを特徴
とする薄膜の製膜方法。1. GeF 4 and silane gas (Si n H 2) on a heated substrate having a substrate temperature of 200 to 600 ° C.
2n + 2 , n is an integer of 1 to 3) A Ge or SiGe thin film is deposited by supplying a mixed gas to form a thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3048193A JPH05315269A (en) | 1992-03-11 | 1993-02-19 | Forming method for thin film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4-52804 | 1992-03-11 | ||
| JP5280492 | 1992-03-11 | ||
| JP3048193A JPH05315269A (en) | 1992-03-11 | 1993-02-19 | Forming method for thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05315269A true JPH05315269A (en) | 1993-11-26 |
Family
ID=26368843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3048193A Pending JPH05315269A (en) | 1992-03-11 | 1993-02-19 | Forming method for thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05315269A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07211653A (en) * | 1994-01-26 | 1995-08-11 | Central Glass Co Ltd | Deposition of ge thin film |
| US5879970A (en) * | 1996-09-05 | 1999-03-09 | Nec Corporation | Process of growing polycrystalline silicon-germanium alloy having large silicon content |
| US6958253B2 (en) * | 2001-02-12 | 2005-10-25 | Asm America, Inc. | Process for deposition of semiconductor films |
| JP2007013194A (en) * | 2006-08-07 | 2007-01-18 | Junichi Hanna | Semiconductor substrate and method of manufacturing same |
| JP2007165921A (en) * | 2007-01-19 | 2007-06-28 | Junichi Hanna | Semiconductor base material and production method thereof |
| JP2008133544A (en) * | 2008-01-28 | 2008-06-12 | Junichi Hanna | Conductive pattern and method for forming the same |
| US7413967B2 (en) | 2004-05-19 | 2008-08-19 | International Business Machines Corporation | Yield improvement in silicon-germanium epitaxial growth |
| JP2011223020A (en) * | 2003-03-19 | 2011-11-04 | Taiwan Semiconductor Manufactuaring Co Ltd | Method of producing high quality relaxed silicon germanium layer |
| US8878244B2 (en) | 2002-05-31 | 2014-11-04 | Renesas Electronics Corporation | Semiconductor device having strained silicon film |
-
1993
- 1993-02-19 JP JP3048193A patent/JPH05315269A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07211653A (en) * | 1994-01-26 | 1995-08-11 | Central Glass Co Ltd | Deposition of ge thin film |
| US5879970A (en) * | 1996-09-05 | 1999-03-09 | Nec Corporation | Process of growing polycrystalline silicon-germanium alloy having large silicon content |
| US6958253B2 (en) * | 2001-02-12 | 2005-10-25 | Asm America, Inc. | Process for deposition of semiconductor films |
| US7186582B2 (en) | 2001-02-12 | 2007-03-06 | Asm America, Inc. | Process for deposition of semiconductor films |
| US8878244B2 (en) | 2002-05-31 | 2014-11-04 | Renesas Electronics Corporation | Semiconductor device having strained silicon film |
| JP2011223020A (en) * | 2003-03-19 | 2011-11-04 | Taiwan Semiconductor Manufactuaring Co Ltd | Method of producing high quality relaxed silicon germanium layer |
| US7413967B2 (en) | 2004-05-19 | 2008-08-19 | International Business Machines Corporation | Yield improvement in silicon-germanium epitaxial growth |
| JP2007013194A (en) * | 2006-08-07 | 2007-01-18 | Junichi Hanna | Semiconductor substrate and method of manufacturing same |
| JP4527090B2 (en) * | 2006-08-07 | 2010-08-18 | 純一 半那 | Manufacturing method of semiconductor substrate |
| JP2007165921A (en) * | 2007-01-19 | 2007-06-28 | Junichi Hanna | Semiconductor base material and production method thereof |
| JP2008133544A (en) * | 2008-01-28 | 2008-06-12 | Junichi Hanna | Conductive pattern and method for forming the same |
| JP4739356B2 (en) * | 2008-01-28 | 2011-08-03 | 純一 半那 | Conductive pattern |
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