JPH02167891A - Gas-phase synthetic device of diamond film - Google Patents
Gas-phase synthetic device of diamond filmInfo
- Publication number
- JPH02167891A JPH02167891A JP32128088A JP32128088A JPH02167891A JP H02167891 A JPH02167891 A JP H02167891A JP 32128088 A JP32128088 A JP 32128088A JP 32128088 A JP32128088 A JP 32128088A JP H02167891 A JPH02167891 A JP H02167891A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- diamond film
- gas
- beam source
- plasma beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 48
- 239000010432 diamond Substances 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 19
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 15
- 239000012808 vapor phase Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 abstract description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001308 synthesis method Methods 0.000 description 5
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 4
- 150000001722 carbon compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CFQGDIWRTHFZMQ-UHFFFAOYSA-N argon helium Chemical compound [He].[Ar] CFQGDIWRTHFZMQ-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相合成法によるタ゛イヤモンド膜形成装置、
さらに詳しくはダイヤモンド膜を大面積にわたり均一に
形威し、また形成時の基板温度の低温化を可能とするダ
イヤモンド膜気相合成装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a diamond film forming apparatus using a vapor phase synthesis method;
More specifically, the present invention relates to a diamond film vapor phase synthesis apparatus that can uniformly form a diamond film over a large area and lower the substrate temperature during formation.
低圧気相合成法によるダイヤモンド合成が可能となって
以来、種々のダイヤモンド膜気相合成装置および方法が
提案されている。以下に代表的なダイヤモンド膜合戒装
置および方法について説明する。Since it became possible to synthesize diamond by low-pressure vapor phase synthesis, various devices and methods for vapor phase synthesis of diamond films have been proposed. A typical diamond film gathering device and method will be described below.
熱フイラメントＣＶＤ法は、ダイヤモンドの低圧気相合
成法の代表的な方法の一つであり、例えば特公昭５９−
２７７５３号公報に記載されているように、この装置の
特徴は試料基板近傍に温度２０００℃以上に加熱される
フィラメントが置かれている。このフィラメントによっ
て、反応室へ尋人された水素とメタンなどの炭素を含む
原料ガスが分解され、原子状水素および炭化水素ラジカ
ルをはじめとする活性種が生成し、これらの活性種が基
板上に拡散しダイヤモンドが析出、成長する。The hot filament CVD method is one of the typical low-pressure vapor phase synthesis methods for diamond, and is
As described in Japanese Patent No. 27753, a feature of this device is that a filament heated to a temperature of 2000° C. or higher is placed near the sample substrate. This filament decomposes the raw material gas containing hydrogen and carbon such as methane introduced into the reaction chamber, producing active species including atomic hydrogen and hydrocarbon radicals, and these active species are transferred onto the substrate. Diffusion occurs, and diamond precipitates and grows.
この熱フイラメントＣＶＤ法の装置構成は、非常に簡素
ではあるが、
■反応時間とともにフィラメントが炭化、変形し、再現
性に優れたダイヤモンドの合成ができない。Although the apparatus configuration of this hot filament CVD method is very simple, (1) the filament carbonizes and deforms with the reaction time, making it impossible to synthesize diamond with excellent reproducibility.
■ダイヤモンドの形成される領域が、フィラメントの大
きさと位置に依存するため、広い面積にわたってタ゛イ
ヤモンド膜を均一に形成することが困難である、などの
問題点を抱えている。(2) Since the area where diamond is formed depends on the size and position of the filament, there are problems such as the difficulty of uniformly forming a diamond film over a wide area.
マイクロ波プラズマＣＶＤ法の装置は、例えば特公昭６
１−３３２０号公報に記載されているようにマイクロ波
発振電源（２，４５ＧＨｚ ）、その出力を反応管に導
く導波管、反応管内の圧力を減圧に保持する真空系、反
応ガス供給系から構成されており、試料基板は反応管々
らびに導波管の中央部付近に設置され、マイクロ波によ
って発生させたプラズマによって原料ガスと水素ガスの
分解を行う。この時、マイクロ波は、電源より導波管を
用いて反応部に導入されるが、導波管のサイズによって
放電領域が決まってしまうため、ダイヤモンド膜形成領
域に限界があり、あまり大きな試料基板全面にダイヤモ
ンド膜を形成することが困難であるという問題がある。The equipment for microwave plasma CVD method is, for example,
As described in Publication No. 1-3320, from a microwave oscillation power source (2.45 GHz), a waveguide that guides the output to the reaction tube, a vacuum system that maintains the pressure inside the reaction tube at reduced pressure, and a reaction gas supply system. The sample substrate is placed near the center of the reaction tubes and waveguide, and source gas and hydrogen gas are decomposed by plasma generated by microwaves. At this time, microwaves are introduced into the reaction area from a power source using a waveguide, but since the discharge area is determined by the size of the waveguide, there is a limit to the diamond film formation area, and the sample substrate is too large. There is a problem in that it is difficult to form a diamond film over the entire surface.
アークプラズマ法は、高周波電源、例えばＳ。The arc plasma method uses a high frequency power source, such as S.
Ｍａｔｓｕｍｏｔｏ、 Ｍ、 Ｈｉｎｏ ａｎｄ Ｔ、
Ｋｏｂａｙａｓｈｉ ； Ａｐｐｌ、 ｐｈｙｓ。Matsumoto, M., Hino and T.
Kobayashi; Appl, phys.
Ｌｅｔｔ、５１（１０）、（１９８７−９）、７３７あ
るいは直流電源、例えばＫ 、 Ｋｕｒｉｈａｒａ 、
Ｋ 、 ５ａｓａｋｉ 、 Ｍ 、 Ｋａｗａｒａｄ
ａａｎｄ Ｎ、 Ｋｏｓｈｉｎｏ； Ａｐｐｌ、 Ｐ
ｈｙｓ Ｌｅｔｔ、 ５２（６）＋ （１９８８−２
）ｙ４３７を用いて、高温のアークプラズマを発生し、
ダイヤモンド膜を合成する方法である。このアークプラ
ズマ法では、ダイヤモンドの成長速度は非常に速いが、
成膜可能面積が小さいこと、基板温度が高温になること
、基板温度の制御が困難であるなどの問題点がある。Lett, 51(10), (1987-9), 737 or a DC power supply, such as K. Kurihara,
K., 5asaki, M., Kawarad.
aand N, Koshino; Appl, P
hys Lett, 52(6)+ (1988-2
)y437 to generate high temperature arc plasma,
This is a method for synthesizing diamond films. With this arc plasma method, the growth rate of diamond is very fast, but
There are problems such as a small area where a film can be formed, a high substrate temperature, and difficulty in controlling the substrate temperature.
その他の方法として、熱フィラメントＣｖＤ法を改良し
た電子衝撃ＣＶＤ法として例えば、Ａ。Other methods include electron impact CVD, which is an improved version of hot filament CVD, such as A.
Ｓａｗａｂｅ ｅｔ ａｌ、、 Ａｐｐｌ、 Ｐｈｙｓ
、 Ｌｅｔｔ、、 ４６−２ （１９８５−１）１４６
やＤＣプラズマＣＶＤ法、例えばに、 ５ｕｚｕｋｉｅ
ｔ ａｌ、、 Ａｐｐｌ、 Ｐｈｙｓ、 Ｌｅｔｔ、、
５０．７２８（１９８７）あるいは燃焼炎法、例えば
広瀬、近藤、第３５回応用物理学関係連合講演会予稿集
、（１９８８）、Ｐ２Ｓ５などσ）方法および装置が提
案されているが、いずれもダイヤモンド膜を大面積にわ
たり均一に形成し、同時に試料基板温度の低温化をも可
能にする方法および装置は開発されていないのが現状で
ある。Sawabe et al., Appl, Phys.
, Lett, 46-2 (1985-1) 146
or DC plasma CVD method, for example,
tal,, Appl, Phys, Lett,,
50.728 (1987) or the combustion flame method, for example, Hirose, Kondo, Proceedings of the 35th Applied Physics Association Conference, (1988), P2S5, etc.) methods and devices have been proposed, but none of them use diamond. At present, no method or apparatus has been developed that enables uniform formation of a film over a large area and at the same time lowers the temperature of the sample substrate.
本発明の目的は、気相合成法におけるダイヤモンド膜合
成において、ダイヤモンド膜を大面積にわたって均一に
形成し、さらに従来法より試料基板温度がより低温でダ
イヤモンド膜形成が可能なダイヤモンド膜気相合成装置
を提供することにある。An object of the present invention is to provide a diamond film vapor phase synthesis apparatus that can uniformly form a diamond film over a large area in diamond film synthesis using a vapor phase synthesis method, and furthermore, can form a diamond film at a lower sample substrate temperature than the conventional method. Our goal is to provide the following.
上記目的を達成するために本発明のダイヤモンド膜気相
合成装置は、排気系およびガス導入口を有する真空室内
に中空陰極型のプラズマビーム源とこのプラズマビーム
源と対向配置しかつこのプラズマビーム源に対して正の
電圧が印加される対向電極を設置し、プラズマビーム源
で発生する原子状水素を含むプラズマを真空室とプラズ
マビーム源の圧力勾配と対向電極に印加する正電圧によ
って真空室に引き出し、このプラズマビーム源と対向電
極との間に形成されたプラズマ領域中に試料基板を設置
することによって構成される。In order to achieve the above object, the diamond film vapor phase synthesis apparatus of the present invention includes a hollow cathode type plasma beam source disposed in a vacuum chamber having an exhaust system and a gas inlet, and facing the plasma beam source. A counter electrode to which a positive voltage is applied is installed, and the plasma containing atomic hydrogen generated in the plasma beam source is transferred to the vacuum chamber by the pressure gradient between the vacuum chamber and the plasma beam source and the positive voltage applied to the counter electrode. The sample substrate is placed in a plasma region formed between the plasma beam source and the counter electrode.
以下に図面を用いて本発明の詳細な説明する。 The present invention will be described in detail below using the drawings.
第１図は、本発明のダイヤモンド膜気相合成装置の装置
要部の側面配置を示す断面図である。FIG. 1 is a sectional view showing the side arrangement of the main parts of the diamond film vapor phase synthesis apparatus of the present invention.
排気系２４を備えた真空室２２の壁面にプラズマビーム
源１０と、このプラズマビーム源１ｏに対向配置する水
冷可能な対向電極１２とを設ける。A plasma beam source 10 and a water-coolable counter electrode 12 disposed opposite the plasma beam source 1o are provided on the wall of a vacuum chamber 22 equipped with an exhaust system 24.
ダイヤモンド膜合成の原料ガスであるメタン、−酸化炭
素をはじめとする炭素化合物ガスを導入するためのガス
導入口２８は、プラズマビーム源１０内部の電極の炭化
を防ぐため、真空室２２の壁面に設ける。試料基板１６
は、プラズマビーム源１０と対向電極１２０間に発生さ
せるプラズマ領域１８中に配置する。試料基板１６は、
基板支持体１４に設置された加熱源によって加熱するこ
とが可能である。また、マグネットコイル２６は、プラ
ズマを閉じこめるように構成する。A gas inlet 28 for introducing carbon compound gases such as methane and carbon oxide, which are raw material gases for diamond film synthesis, is provided on the wall of the vacuum chamber 22 to prevent carbonization of the electrode inside the plasma beam source 10. establish. Sample substrate 16
is placed in a plasma region 18 generated between the plasma beam source 10 and the counter electrode 120. The sample substrate 16 is
Heating can be done by a heating source placed on the substrate support 14. Further, the magnet coil 26 is configured to confine plasma.
第２図は第１図に示したプラズマビーム源１゜の構成を
示す断面図である。プラズマビーム源１０は、水冷ボッ
クス４０を貫通してガス樽入口を兼ねるタンクルパイプ
からなる補助陰極６２と円板状の六硼化ランタン（Ｌａ
Ｂａ）からなる主陰極６４とタングステンから紅る円板
状の熱板６６と、モリブデンからなる外筒４２およびキ
ャップ６８と中間電極３０とから構成される。FIG. 2 is a sectional view showing the configuration of the plasma beam source 1° shown in FIG. The plasma beam source 10 includes an auxiliary cathode 62 consisting of a tank pipe that penetrates a water-cooled box 40 and also serves as an inlet for a gas barrel, and a disk-shaped lanthanum hexaboride (La
It is composed of a main cathode 64 made of Ba), a disc-shaped hot plate 66 made of tungsten, an outer cylinder 42 and a cap 68 made of molybdenum, and an intermediate electrode 30.
プラズマの発生は、真空室２２内の圧力を排気系２４に
よって、１０”” Ｔｏｒｒ程度の真空度に真空排気し
た後、プラズマビーム源１ｏ内において、補助陰極３２
と中間電極６０との間で水素ガスを主成分とする導入ガ
スを放電させ、この放電により主陰極３４が加熱され高
温になると、次に主陰極６４と中間電極６０との間の放
電に移行する。Plasma is generated by evacuating the pressure inside the vacuum chamber 22 to a degree of vacuum of about 10'' Torr using the exhaust system 24, and then injecting the auxiliary cathode 32 into the plasma beam source 1o.
The introduced gas containing hydrogen gas as a main component is discharged between the main cathode 64 and the intermediate electrode 60, and when the main cathode 34 is heated to a high temperature by this discharge, the discharge then shifts to between the main cathode 64 and the intermediate electrode 60. do.
この放電により高温の主陰極６４から、大量の熱電子が
放出され、中間電極３０により加速される。Due to this discharge, a large amount of thermoelectrons are emitted from the high temperature main cathode 64 and are accelerated by the intermediate electrode 30.
この時、補助陰極３２から４人した水素ガスの解離によ
って、タ゛イヤモンド形成において非ダイヤモンド成分
のエツチング効果に有効な原子状水素を含む高密度のプ
ラズマが生成され、プラズマ領域１８をプラズマビーム
源１０に対して正の電圧が印加されかつ水冷された対向
′電極１２との間に形成する。この時、プラズマの放電
を安定させるためアルゴン ヘリウムなどの不活性ガス
を添加しても良い。At this time, due to the dissociation of the hydrogen gas from the auxiliary cathode 32, a high-density plasma containing atomic hydrogen, which is effective for etching non-diamond components in diamond formation, is generated, and the plasma region 18 is connected to the plasma beam source 10. On the other hand, a positive voltage is applied to the opposite electrode 12, which is water-cooled. At this time, an inert gas such as argon helium may be added to stabilize plasma discharge.
上記の操作と平行して、ガス導入口２８からメタンガス
を導入し、真空室２２の真空度をＩＴｏｒｒ〜１０ Ｔ
ｏｒｒ、およびプラズマビーム源１０内の真空度ヲ１０
Ｔｏｒｒ〜１００ Ｔｏｒｒに保持する。この圧力差
の保持は、プラズマビーム源１ｏと！空室２２間の開口
部の大きさを調節することによって可能であるが、プラ
ズマビーム源１０と真空室２２との間に中間排気室を設
けても良い。本実施例では、真空室２２内部の真空度を
５ Ｔｏｒｒ、プラズマビーム源１ｏ内部の真空度を４
０ Ｔｏｒｒの圧力に保持した。ダイヤモンド膜を形成
するためには、真空室２２内の混合ガス中の炭素化合物
ガス濃度を０．１％〜１０％程度にするが、結晶性の優
れたダイヤモンド膜を析出させるためには１％前後が最
適であった。In parallel with the above operation, methane gas is introduced from the gas inlet 28, and the degree of vacuum in the vacuum chamber 22 is set to ITorr ~ 10 T.
orr, and the degree of vacuum in the plasma beam source 10 is 10
Maintain at Torr to 100 Torr. This pressure difference is maintained between the plasma beam source 1o! Although this is possible by adjusting the size of the opening between the cavities 22, an intermediate evacuation chamber may be provided between the plasma beam source 10 and the vacuum chamber 22. In this embodiment, the degree of vacuum inside the vacuum chamber 22 is 5 Torr, and the degree of vacuum inside the plasma beam source 1o is 4 Torr.
A pressure of 0 Torr was maintained. In order to form a diamond film, the carbon compound gas concentration in the mixed gas in the vacuum chamber 22 is set to about 0.1% to 10%, but in order to deposit a diamond film with excellent crystallinity, it is set at 1%. Before and after was the best.
本発明による装置を用いてダイヤモンドの核発生密度を
増加させるため、あらかじめ研摩用タ゛イヤモンド粒子
を使って傷付は処理を行った直径６インチのシリコンウ
ェハー全面に大面積かつ均一プラズマにより、均−ｔよ
ダイヤモンド膜を形成できることが確認された。この時
、ダイヤモンド膜が形成可能な試料基板１６０面積は、
発生するプラズマ領域の大きさに、依存するため、マグ
ネットコイル２６の制御によるプラズマ領域の拡大、さ
らには真空室２２およびプラズマビーム源１ｏをスケー
ルアップすることにより、より大面積の基板に均一にダ
イヤモンド膜を形成することが可能である。In order to increase the density of diamond nucleation using the apparatus according to the present invention, a large area and uniform plasma is applied to the entire surface of a 6-inch diameter silicon wafer, which has been previously scratched using abrasive diamond particles. It was confirmed that it is possible to form a diamond film. At this time, the area of the sample substrate 160 on which a diamond film can be formed is:
Since it depends on the size of the plasma region generated, by expanding the plasma region by controlling the magnet coil 26 and further scaling up the vacuum chamber 22 and plasma beam source 1o, diamond can be uniformly spread over a larger area of the substrate. It is possible to form a film.
また本発明のダイヤモンド膜気相合成装置は、試料基板
の配置位置が原子状水素を含むプラズマを発生するプラ
ズマビーム源１ｏから離れており、さらに従来のダイヤ
モンド気相合成法では数十Ｔｏｒｒ以上のガス圧力を必
要としたが、本装置では高密度プラズマを用いるため、
１０ Ｔｏｒｒ以下のガス圧力域でもダイヤモンドの形
成が可能であることから、試料基板温度の低温化が達成
できる。In addition, in the diamond film vapor phase synthesis apparatus of the present invention, the sample substrate is located far from the plasma beam source 1o that generates plasma containing atomic hydrogen, and the conventional diamond film vapor phase synthesis method Although gas pressure was required, this device uses high-density plasma, so
Since diamond can be formed even in a gas pressure range of 10 Torr or less, the temperature of the sample substrate can be lowered.
本発明による装置では、基板温度５００℃という従来の
気相合成法よりも２００°Ｃ〜３００’Ｃ低い試料基板
温度においてダイヤモンド膜形成が可能である。With the apparatus according to the present invention, it is possible to form a diamond film at a sample substrate temperature of 500°C, which is 200°C to 300'C lower than in the conventional vapor phase synthesis method.
さらに試料基板をプラズマビーム源に対して正電圧を印
加すると、基板への電子線照射によって、試料基板近傍
で炭素化合物ガスから生成される活性種密度が高くなり
、タ°イヤモンド膜の生長速度が増加、さらにはダイヤ
モンドの核発生密度も増加するという効果がある。Furthermore, when a positive voltage is applied to the sample substrate with respect to the plasma beam source, the density of active species generated from carbon compound gas near the sample substrate increases due to electron beam irradiation to the substrate, and the growth rate of the diamond film increases. This has the effect of increasing the nucleation density of diamond.
以上の説明で明らかなように、本発明にょる夕。 As is clear from the above description, the present invention is useful.
イヤモンド膜気相合成装置は、中空陰極型のプラズマビ
ーム源で発生するプラズマを利用することにより、大面
積基板に均一にダイヤモンド膜を形成することが可能で
あり、さらに従来例と比較しより低温の試料基板温度に
おいてダイヤモンド膜形成が可能とｋる効果をもつ。Diamond film vapor phase synthesis equipment uses plasma generated by a hollow cathode type plasma beam source to uniformly form a diamond film on a large area substrate, and also at a lower temperature than conventional methods. This has the effect of making it possible to form a diamond film at a sample substrate temperature of .
第１図は本発明の実施例におけるタ゛イヤモンド膜気相
合成装置を示す側面からの断面図、第２凶は本発明のタ
゛イヤモンド膜気相合或装置に用いるプラズマビーム源
を示す断面図である。
１０・・・・・・プラズマビーム源、
１２・・・・・・対向電極、
４・・・・・・基板支持体、
６・・・・・・試料基板、
８・・・・・・プラズマ領域、
２・・・・・・真空室。
第２図FIG. 1 is a sectional view from the side showing a diamond film vapor phase synthesis apparatus according to an embodiment of the present invention, and the second figure is a sectional view showing a plasma beam source used in the diamond film vapor phase synthesis apparatus of the present invention. DESCRIPTION OF SYMBOLS 10... Plasma beam source, 12... Counter electrode, 4... Substrate support, 6... Sample substrate, 8... Plasma Area, 2... Vacuum chamber. Figure 2
Claims (1)
型のプラズマビーム源と、該プラズマビーム源と対向配
置しかつ前記プラズマビーム源に対して正の電圧が印加
される対向電極を設置し、前記プラズマビーム源と対向
電極との間に発生するプラズマ領域中に試料基板を設置
することを特徴とするダイヤモンド膜気相合成装置。A hollow cathode type plasma beam source and a counter electrode placed opposite to the plasma beam source and to which a positive voltage is applied to the plasma beam source are installed in a vacuum chamber having an exhaust system and a gas inlet, A diamond film vapor phase synthesis apparatus characterized in that a sample substrate is placed in a plasma region generated between the plasma beam source and a counter electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32128088A JPH02167891A (en) | 1988-12-20 | 1988-12-20 | Gas-phase synthetic device of diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32128088A JPH02167891A (en) | 1988-12-20 | 1988-12-20 | Gas-phase synthetic device of diamond film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02167891A true JPH02167891A (en) | 1990-06-28 |
Family
ID=18130801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32128088A Pending JPH02167891A (en) | 1988-12-20 | 1988-12-20 | Gas-phase synthetic device of diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02167891A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02205684A (en) * | 1989-02-02 | 1990-08-15 | Nippon Sheet Glass Co Ltd | Method and device for coating of film |
| US5342660A (en) * | 1991-05-10 | 1994-08-30 | Celestech, Inc. | Method for plasma jet deposition |
| US5551983A (en) * | 1994-11-01 | 1996-09-03 | Celestech, Inc. | Method and apparatus for depositing a substance with temperature control |
| US5616373A (en) * | 1990-09-14 | 1997-04-01 | Balzers Aktiengesellschaft | Plasma CVD method for producing a diamond coating |
| US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
| US6173672B1 (en) | 1997-06-06 | 2001-01-16 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| US6406760B1 (en) | 1996-06-10 | 2002-06-18 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| KR20040022639A (en) * | 2002-09-09 | 2004-03-16 | 주식회사 네오바이오텍 | The generation method of thin coating film by carbon system material |
| KR100765630B1 (en) * | 2006-10-26 | 2007-10-09 | 기아자동차주식회사 | Wiper blade and manufacturing method of it for vehicle |
| DE10149588B4 (en) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Process for diamond coating of substrates |
-
1988
- 1988-12-20 JP JP32128088A patent/JPH02167891A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02205684A (en) * | 1989-02-02 | 1990-08-15 | Nippon Sheet Glass Co Ltd | Method and device for coating of film |
| US5616373A (en) * | 1990-09-14 | 1997-04-01 | Balzers Aktiengesellschaft | Plasma CVD method for producing a diamond coating |
| US5342660A (en) * | 1991-05-10 | 1994-08-30 | Celestech, Inc. | Method for plasma jet deposition |
| US5551983A (en) * | 1994-11-01 | 1996-09-03 | Celestech, Inc. | Method and apparatus for depositing a substance with temperature control |
| US5683759A (en) * | 1994-11-01 | 1997-11-04 | Celestech, Inc. | Method for depositing a substance with temperature control |
| US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
| US6099652A (en) * | 1995-06-07 | 2000-08-08 | Saint-Gobain Industrial Ceramics, Inc. | Apparatus and method for depositing a substance with temperature control |
| US6406760B1 (en) | 1996-06-10 | 2002-06-18 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| US6173672B1 (en) | 1997-06-06 | 2001-01-16 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| DE10149588B4 (en) * | 2001-10-08 | 2017-09-07 | Oerlikon Trading Ag, Trübbach | Process for diamond coating of substrates |
| KR20040022639A (en) * | 2002-09-09 | 2004-03-16 | 주식회사 네오바이오텍 | The generation method of thin coating film by carbon system material |
| KR100765630B1 (en) * | 2006-10-26 | 2007-10-09 | 기아자동차주식회사 | Wiper blade and manufacturing method of it for vehicle |
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