JPH02151866A - Photoresist developing liquid - Google Patents
Photoresist developing liquidInfo
- Publication number
- JPH02151866A JPH02151866A JP29253988A JP29253988A JPH02151866A JP H02151866 A JPH02151866 A JP H02151866A JP 29253988 A JP29253988 A JP 29253988A JP 29253988 A JP29253988 A JP 29253988A JP H02151866 A JPH02151866 A JP H02151866A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- aqueous solution
- weight
- developer
- solution according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- 239000007788 liquid Substances 0.000 title 1
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 23
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004480 active ingredient Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000008367 deionised water Substances 0.000 abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 abstract description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 3
- PUAQLLVFLMYYJJ-UHFFFAOYSA-N 2-aminopropiophenone Chemical compound CC(N)C(=O)C1=CC=CC=C1 PUAQLLVFLMYYJJ-UHFFFAOYSA-N 0.000 abstract 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- -1 trimethylethyl Chemical group 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- ZCMDQLIBAYWMDE-UHFFFAOYSA-N 2-[hexyl(methyl)amino]ethanol Chemical compound CCCCCCN(C)CCO ZCMDQLIBAYWMDE-UHFFFAOYSA-N 0.000 description 1
- OFRNAQFDQREXMU-UHFFFAOYSA-N 2-[methyl(propan-2-yl)amino]ethanol Chemical compound CC(C)N(C)CCO OFRNAQFDQREXMU-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical group [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は新規なフォトレジスト現像液組成物に関し、特
に実質上金属イオンの無いフォトレジスト現像剤水溶液
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to novel photoresist developer compositions, and more particularly to an aqueous photoresist developer solution that is substantially free of metal ions.
（従来の技術及び発明が解決しようとする課題）化学線
照射で像形成のために露光したポジ型フォトレジストか
ら像を発現させる現像には水性アルカリ現像液が広く用
いられている。フォトレジストの化学線照射に露光され
た領域（ま、アルカリに可溶と・なっていて水性アルカ
リ現像液で除去される。未露光のフォトレジストの領域
はアルカリ現像液に容易には溶解せず、フォトレジスト
の露光及び未露光部分の間の溶解度の相異が所望のフォ
トレジスト像の現像を可能にしている。BACKGROUND OF THE INVENTION Aqueous alkaline developers are widely used for developing images from positive photoresists that have been exposed to actinic radiation to form images. Areas of the photoresist that have been exposed to actinic radiation (are alkaline soluble and can be removed with an aqueous alkaline developer. Areas of the photoresist that are unexposed will not readily dissolve in an alkaline developer). , the difference in solubility between the exposed and unexposed portions of the photoresist allows development of the desired photoresist image.
金属イオン例えばナトリウム及びカリウムイオンを含有
する水性アルカリ現像液を用いた場合は、現像後、フォ
トレジスト像と基板を金属イオンの痕跡が全く無くなる
迄、水で注意深くすすぐ必要があるという欠点がある。The disadvantage of using aqueous alkaline developers containing metal ions, such as sodium and potassium ions, is that after development the photoresist image and substrate must be carefully rinsed with water until all traces of metal ions are removed.
金属イオンの痕跡量を像基板上に残した場合には、イオ
ンで汚染された基板から究極的に製造された半導体デバ
イスの好ましからざる電気的因子の変化を惹起しかねな
い。これは集積回路の外形寸法がサブミクロンのレベル
で収縮し続けるという点で次第に重要化している問題で
ある。金属イオンの痕跡を徹底的に除去するために高価
な脱イオン水て徹底的にすすぐ費用は（集積）回路の製
造の全経費中の大きな要素となっている。If traces of metal ions are left on the image substrate, they can cause undesirable electrical changes in semiconductor devices ultimately fabricated from the ion-contaminated substrate. This is an increasingly important problem as integrated circuit dimensions continue to shrink at the submicron level. The cost of thorough rinsing with expensive deionized water to thoroughly remove traces of metal ions is a major component of the overall cost of manufacturing (integrated) circuits.
従って、極めて低い金属イオン含量の有機塩基を水性ア
ルカリ現像液の主成分として使用することに注意が向け
られている。それで第４級アンモニウムハイドロオキサ
イド例えばテトラメチルアンモニウムハイドロオキサイ
ドを含有する水性現像液が超小型電子回路の製造でポジ
型フォトレジストの現像に次第に利用されるようになっ
ている。然しかかる現像液は金属アルカリ系現像液より
も腐食性が強く、即ちフォトレジストの未露光部分並び
に露光部分を侵し、そしてしばしばフォトレジスｌ−の
未露光領域のフィルム厚が大幅に減少する結果となるこ
とが判明した。Attention is therefore directed to the use of organic bases with very low metal ion content as the main component of aqueous alkaline developers. Aqueous developers containing quaternary ammonium hydroxides, such as tetramethylammonium hydroxide, are therefore increasingly being utilized for developing positive photoresists in the manufacture of microelectronic circuits. However, such developers are more corrosive than metal-alkaline developers, i.e. they attack unexposed as well as exposed areas of the photoresist, and often result in a significant reduction in film thickness in the unexposed areas of the photoresist. It turned out to be.
（課題を解決するための手段）
第４級アンモニウムハイドロオキサイドとＮ、Ｎ−シア
ル一
キルアルカノールアミンを組合せて含有する水性現像液
が極めて好ましい性質を有しており且つ活性成分として
第４級アンモニウムハイドロオキサイドのみを含有する
現像液に比して実用性能上著しくすぐれていることが今
や見出された。(Means for Solving the Problems) An aqueous developer containing a combination of quaternary ammonium hydroxide and N,N-sialylmonkylalkanolamine has extremely favorable properties and contains quaternary ammonium as an active ingredient. It has now been found that the developer has significantly superior practical performance compared to a developer containing only hydroxide.
従って本発明は実質上金属イオンが存在することの無い
、そして活性成分が（ａ）第４級アンモニウムハイドロ
オキサイドと（ｂ）Ｎ、Ｎ−ジアルキルアルカノールア
ミンより成るポジ型フォトレジスト現像剤水溶液より成
る。成分（ａ）の成分子ｂｌに対する重量比は好ましく
は１０＝ １乃至１： ２０の範囲、そしてより好まし
くは１： １乃至１： １０の範囲である。現像剤溶液
中の成分（ａｌと成分［ｂ）の合計量は好ましくは１乃
至３０重景％の範囲、そしてより好ましくは４乃至１２
重量％の範囲である。Therefore, the present invention comprises an aqueous positive photoresist developer solution substantially free of metal ions and whose active ingredients are (a) quaternary ammonium hydroxide and (b) N,N-dialkylalkanolamine. . The weight ratio of component (a) to component bl is preferably in the range 10=1 to 1:20, and more preferably in the range 1:1 to 1:10. The total amount of components (al and component [b) in the developer solution preferably ranges from 1 to 30%, and more preferably from 4 to 12%.
% by weight.
本発明の現像剤溶液に使用できる第４級アンモニウムハ
イドロオキサイドの代表例は、テトラアルキル第４級ア
ンモニウムハイドロオキサイド例えばテトラメチル−、
テトラエチル−、テトライソプロピル−、テトラブチル
−、ジメチルジエチル−、トリメチルエチル−、テトラ
ペンチル−及びテトラヘキシル−アンモニウムハイドロ
オキサイド等；トリアルキルアラルキルアンモニウムへ
イドロオキサイド例えばトリメチルベンジル−、トリエ
チルベンジル−、メチルエチルイソプロピルベンジル−
アンモニウムハイドロオキサイド等；及びＮ−ヒドロキ
シアルキル−Ｎ、Ｎ、Ｎ−トリアルキルアンモニウムハ
イドロオキサイド例えばＮ−ヒドロキシエチル−トリメ
チルアンモニウムハイドロオキサイド（コリン）、Ｎ−
ヒドロキシエチル−トリエチルアンモニウムハイドロオ
キサイド、Ｎヒドロキシプロピル−トリメチルアンモニ
ウムハイドロオキサイド等である。好ましい群はテトラ
アルキル第４級アンモニウムハイドロオキサイドであり
、好ましい化合物はテトラメチルアンモニウムハイドロ
オキサイドである。Representative examples of quaternary ammonium hydroxides that can be used in the developer solution of the present invention include tetraalkyl quaternary ammonium hydroxides such as tetramethyl-,
Tetraethyl, tetraisopropyl, tetrabutyl, dimethyldiethyl, trimethylethyl, tetrapentyl and tetrahexyl ammonium hydroxide, etc.; trialkylaralkyl ammonium hydroxide such as trimethylbenzyl, triethylbenzyl, methylethylisopropylbenzyl −
ammonium hydroxide, etc.; and N-hydroxyalkyl-N,N,N-trialkylammonium hydroxide such as N-hydroxyethyl-trimethylammonium hydroxide (choline), N-
These include hydroxyethyl-triethylammonium hydroxide, N-hydroxypropyl-trimethylammonium hydroxide, and the like. A preferred group are the tetraalkyl quaternary ammonium hydroxides, and a preferred compound is tetramethylammonium hydroxide.
Ｎ、Ｎ−ジアルキルアルカノールアミンの代表例は、Ｎ
。A typical example of N,N-dialkylalkanolamine is N
.
Ｎ−ジメチルエタノールアミン、Ｎ、Ｎ−ジエチルエタ
ノールアミン、Ｎ、Ｎ−ジイソプロピルエタノールアミ
ン、Ｎ、 Ｎジメチルイソプロパツールアミン、Ｎ、Ｎ
−ジブチルエタノルアミン、Ｎ−メチル−Ｎ−イソプロ
ピルエタノールアミン、Ｎ−メチル−Ｎ−ヘキシルエタ
ノールアミン、Ｎ、Ｎ−ジエチルブタノールアミン等で
ある。好ましい群はＮ、Ｎ−ジアルキルエタノールアミ
ンであり、好ましい化合物はＮ、Ｎ−ジエチルエタノー
ルアミンである。N-dimethylethanolamine, N,N-diethylethanolamine, N,N-diisopropylethanolamine, N,Ndimethylisopropylethanolamine, N,N
-dibutylethanolamine, N-methyl-N-isopropylethanolamine, N-methyl-N-hexylethanolamine, N,N-diethylbutanolamine, and the like. A preferred group is N,N-dialkylethanolamine, and a preferred compound is N,N-diethylethanolamine.
本発明の現像剤溶液は成分をそれぞれ、適切な量と割合
で、適当な量の脱イオン水に溶解するだけで調製される
。成分を溶液にする順序は臨界的では無い。The developer solution of the present invention is prepared by simply dissolving each of the components in the appropriate amounts and proportions in the appropriate amount of deionized water. The order in which the components are brought into solution is not critical.
成分（ａ）及び（ｂ）以外に、本発明の現像剤溶液は他
の任意的な、従来の現像剤溶液に使用されている添加剤
成分も含有し得る、但しかかる添加剤は実質上金属イオ
ンが無いという条件が付く。かかる添加剤の例は極めて
低い金属イオン含量の非イオン及び他の型の界面活性剤
である。Besides components (a) and (b), the developer solutions of the present invention may also contain other optional additive components used in conventional developer solutions, provided that such additives are substantially metallic. The condition is that there are no ions. Examples of such additives are non-ionic and other types of surfactants with very low metal ion content.
本発明は、像形成用に化学線照射に露光させたポジ型フ
ォトレジスト層に本発明の現像剤溶液を作用させること
を特徴とするポジ型フォトレジストの現像方法でもある
。この方法は当業者に知られた手段と装置を用いて実施
できる。例示的には現像すべきフォトレジスト潜像層に
、好ましくは乙の目的に適した市販の装置を用いて、現
像剤溶液を散布する。別の方法ではフォトレジスト潜像
層と基板を、所望の像の現像に必要な適切な一般に１分
のオーダの時間の間、現像剤溶液の浴に浸漬する。現像
した像層は、現像にどの方法を使用しても、次に脱イオ
ン水ですすいで、次の製造工程に行く前に乾燥する。The present invention is also a method for developing a positive photoresist, characterized in that a developer solution of the present invention is applied to a positive photoresist layer that has been exposed to actinic radiation for imaging purposes. This method can be carried out using means and equipment known to those skilled in the art. Illustratively, the photoresist latent image layer to be developed is sprayed with a developer solution, preferably using commercially available equipment suitable for this purpose. In another method, the latent photoresist image layer and substrate are immersed in a bath of developer solution for a suitable period of time, generally on the order of one minute, necessary to develop the desired image. The developed image layer, regardless of the method used for development, is then rinsed with deionized water and dried before proceeding to the next manufacturing step.
露光（現像）した像の壁が定在波的外観を殆ど示さない
事及び現像工程で起こるフィルム厚の減少が著しく少な
くなった点で、本発明の現像剤溶液が成分（ａ）のみを
含有する対応する現像剤溶液よりも性状がすぐれている
乙とが明らかとなった。かかる特徴の利点は当業者に容
易に了解されよう。The developer solution of the present invention contains only component (a) in that the walls of the exposed (developed) image exhibit almost no standing wave appearance and that the reduction in film thickness that occurs during the development process is significantly reduced. It has become clear that the properties of this developer solution are better than those of the corresponding developer solution. The advantages of such features will be readily apparent to those skilled in the art.
以下の実施例は本発明の方法と現像剤組成物及び発明の
実施方法を例示しようとするものであって、発明を限定
しようとするものでは無い。The following examples are intended to illustrate the methods and developer compositions of the present invention and methods of carrying out the invention, and are not intended to limit the invention.
実施例 １
テトラメチルアンモニウムハイドロオキサイドの２５％
Ｗ／Ｗ水溶液の４．３６重量部、Ｎ、Ｎ−ジエチルエタ
ノールアミンの８．４７重量部と脱イオン水の８７１７
重量部を混合して本発明の現像剤溶液を調製した。Example 1 25% of tetramethylammonium hydroxide
4.36 parts by weight of W/W aqueous solution, 8.47 parts by weight of N,N-diethylethanolamine and 8717 parts by weight of deionized water.
A developer solution of the present invention was prepared by mixing parts by weight.
シリコンウェーハーを、ノボラック樹脂と２−ジアゾ−
１＝オキソナフトキノン−５−スルホン酸のトリヒドロ
キシベンゾフェノンエステルの溶液混合溶液［ＵＬＴＲ
ＡＭＡＣｔ′″ＰＲ９１４： ＭａｃＤｅｒ−ｍｉｄ、
Ｉｎｅ、、 Ｗａｔｅｒｂｕｒｙ、 Ｃｔ、］から成
る高分解能、高コントラスト、高アスペクト比ポジ型フ
ォトレジスト系を用いて５０００ｒｐｍでスピン被覆し
た。得られた被膜は対流炉で１００℃で３０分ベーキン
グ後に１２ミクロンの平均犀を有していた・被膜は０ｒ
ｉｅｌプリンターを用いてマスクを通して紫外光に広域
接触して像形成のために露光させた。ウェーハーを次一
に上述の現像剤溶液の浴に６０秒浸漬し、脱イオン水で
すすいで空気乾燥した。このように現像した像を顕微鏡
的に検査したところ、目立った定在波的外観は見られな
かった。現像の結果、像のフィルムの厚さの目立った減
少はなかった。Silicon wafers are coated with novolak resin and 2-diazo-
1=Mixed solution of trihydroxybenzophenone ester of oxonaphthoquinone-5-sulfonic acid [ULTR
AMACt'''PR914: MacDer-mid,
A high-resolution, high-contrast, high-aspect-ratio positive-working photoresist system consisting of A. Ine, Waterbury, Ct.] was spin coated at 5000 rpm. The resulting coating had an average grain size of 12 microns after baking for 30 minutes at 100°C in a convection oven.
Images were exposed to broad-area UV light through a mask using an IEL printer. The wafers were then immersed in a bath of the developer solution described above for 60 seconds, rinsed with deionized water, and air dried. Microscopic examination of the image thus developed revealed no noticeable standing wave appearance. Development resulted in no noticeable decrease in image film thickness.
実施例 ２
テトラメチルアンモニウムハイドロオキサイドの２５％
Ｗ／、水Ｓ液の６．４４３ｉ量部、Ｎ、 Ｎ−ジエチル
エタノールアミンの６４４重量部と脱イオン水の８７．
１２重量部を混合して本発明の現像剤溶液を調製した。Example 2 25% of tetramethylammonium hydroxide
W/, 6.443 parts by weight of water S solution, 644 parts by weight of N,N-diethylethanolamine and 87 parts by weight of deionized water.
A developer solution of the present invention was prepared by mixing 12 parts by weight.
実施例 ３
テトラメチルアンモニウムハイドロオキサイドの２５％
Ｗ／、水ｍ液の３．７５１ｉ量部、Ｎ、Ｎ−ジエチルエ
タノールアミンの７２８重量部と脱イオン水の８８．９
７重量部を混合して本発明の現像剤溶液を調製した。Example 3 25% of tetramethylammonium hydroxide
W/, 3.751 parts by weight of water, 728 parts by weight of N,N-diethylethanolamine and 88.9 parts by weight of deionized water.
A developer solution of the present invention was prepared by mixing 7 parts by weight.
Claims (1)
ロオキサイド及び（ｂ）Ｎ，Ｎ−ジアルキルアルカノー
ルアミンを含有し、成分（ａ）の成分（ｂ）に対する重
量比が１０：１乃至１：２０の範囲であり且つフォトレ
ジスト現像剤水溶液中の（ａ）＋（ｂ）の重量％が１乃
至３０の範囲であることを特徴とする実質上金属イオン
のないフォトレジスト現像剤水溶液。 ２、該第４級アンモニウムハイドロオキサイドがテトラ
アルキルアンモニウムハイドロオキサイドである請求項
１記載のフォトレジスト現像剤水溶液。 ３、該テトラアルキルアンモニウムハイドロオキサイド
がテトラメチルアンモニウムハイドロオキサイドである
請求項２記載のフォトレジスト現像剤水溶液。 ４、該Ｎ，Ｎ−ジアルキルアルカノールアミンがＮ，Ｎ
−ジアルキルエタノールアミンである請求項１記載のフ
ォトレジスト現像剤水溶液。 ５、該Ｎ，Ｎ−ジアルキルエタノールアミンがＮ，Ｎ−
ジエチルエタノールアミンである請求項４記載のフォト
レジスト現像剤水溶液。 ６、成分（ａ）と（ｂ）とを実質上等しい重量で存在さ
せた請求項１記載のフォトレジスト現像剤水溶液。 ７、該溶液中の（ａ）＋（ｂ）の合計量が４乃至１２重
量％の範囲にある請求項１記載のフォトレジスト現像剤
水溶液。 ８、第４級アンモニウムハイドロオキサイドがテトラメ
チルアンモニウムハイドロオキサイドでありＮ，Ｎ−ジ
アルキルアルカノールアミンがＮ，Ｎ−ジエチルエタノ
ールアミンであり前者：後者の重量比が１０：１乃至１
：２０であり、且つ両者の合計量が１乃至３０重量％で
ある請求項１記載のフォトレジスト現像剤水溶液。 ９、テトラメチルアンモニウムハイドロオキサイド：Ｎ
，Ｎ−ジエチルエタノールアミンの重量比が１：１乃至
１：１０の範囲であり且つ該溶液中の（ａ）＋（ｂ）の
合計量が４乃至１２重量％の範囲である請求項８記載の
フォトレジスト現像剤水溶液。 １０、像形成用化学線照射に露光させたポジ型フォトレ
ジスト層に請求項１記載の現像剤水溶液を作用させるこ
とを特徴とするポジ型フォトレジストの現像方法。 １１、像形成用化学線照射に露光させたポジ型フォトレ
ジスト層に請求項８記載の現像剤水溶液を作用させるこ
とを特徴とするポジ型フォトレジストの現像方法。[Claims] 1. Contains (a) quaternary ammonium hydroxide and (b) N,N-dialkylalkanolamine as active ingredients, and the weight ratio of component (a) to component (b) is 10. :1 to 1:20, and the weight percent of (a)+(b) in the photoresist developer aqueous solution is in the range of 1 to 30. agent aqueous solution. 2. The photoresist developer aqueous solution according to claim 1, wherein the quaternary ammonium hydroxide is a tetraalkylammonium hydroxide. 3. The photoresist developer aqueous solution according to claim 2, wherein the tetraalkylammonium hydroxide is tetramethylammonium hydroxide. 4. The N,N-dialkylalkanolamine is N,N
- The photoresist developer aqueous solution according to claim 1, which is dialkylethanolamine. 5. The N,N-dialkylethanolamine is N,N-
The photoresist developer aqueous solution according to claim 4, which is diethylethanolamine. 6. The photoresist developer aqueous solution according to claim 1, wherein components (a) and (b) are present in substantially equal weights. 7. The photoresist developer aqueous solution according to claim 1, wherein the total amount of (a)+(b) in the solution is in the range of 4 to 12% by weight. 8. The quaternary ammonium hydroxide is tetramethylammonium hydroxide, the N,N-dialkylalkanolamine is N,N-diethylethanolamine, and the weight ratio of the former:latter is 10:1 to 1
:20, and the total amount of both is 1 to 30% by weight. 9. Tetramethylammonium hydroxide: N
, N-diethylethanolamine is in the range of 1:1 to 1:10, and the total amount of (a) + (b) in the solution is in the range of 4 to 12% by weight. Photoresist developer aqueous solution. 10. A method for developing a positive photoresist, which comprises causing an aqueous developer solution according to claim 1 to act on a positive photoresist layer that has been exposed to actinic radiation for image formation. 11. A method for developing a positive photoresist, which comprises causing an aqueous developer solution according to claim 8 to act on a positive photoresist layer that has been exposed to actinic radiation for image formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151866A true JPH02151866A (en) | 1990-06-11 |
| JPH0541980B2 JPH0541980B2 (en) | 1993-06-25 |
Family
ID=17783097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29253988A Granted JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999053381A1 (en) * | 1998-04-15 | 1999-10-21 | Etec Systems, Inc. | Photoresist developer and method of development |
| JP2010066569A (en) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | Resist-developing solution |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
| JPS6419345A (en) * | 1987-04-06 | 1989-01-23 | Thiokol Morton Inc | High contrast positive photoresist developer containing alkanol amine |
-
1988
- 1988-11-21 JP JP29253988A patent/JPH02151866A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
| JPS6419345A (en) * | 1987-04-06 | 1989-01-23 | Thiokol Morton Inc | High contrast positive photoresist developer containing alkanol amine |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999053381A1 (en) * | 1998-04-15 | 1999-10-21 | Etec Systems, Inc. | Photoresist developer and method of development |
| US6107009A (en) * | 1998-04-15 | 2000-08-22 | Tan; Zoilo Cheng Ho | Photoresist developer and method |
| US6200736B1 (en) * | 1998-04-15 | 2001-03-13 | Etec Systems, Inc. | Photoresist developer and method |
| JP2010066569A (en) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | Resist-developing solution |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0541980B2 (en) | 1993-06-25 |
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