JPH0541980B2 - - Google Patents
Info
- Publication number
- JPH0541980B2 JPH0541980B2 JP63292539A JP29253988A JPH0541980B2 JP H0541980 B2 JPH0541980 B2 JP H0541980B2 JP 63292539 A JP63292539 A JP 63292539A JP 29253988 A JP29253988 A JP 29253988A JP H0541980 B2 JPH0541980 B2 JP H0541980B2
- Authority
- JP
- Japan
- Prior art keywords
- aqueous
- photoresist
- developer
- photoresist developer
- solution according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 27
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 10
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical group CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004480 active ingredient Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- -1 trimethylethyl Chemical group 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- ZCMDQLIBAYWMDE-UHFFFAOYSA-N 2-[hexyl(methyl)amino]ethanol Chemical compound CCCCCCN(C)CCO ZCMDQLIBAYWMDE-UHFFFAOYSA-N 0.000 description 1
- OFRNAQFDQREXMU-UHFFFAOYSA-N 2-[methyl(propan-2-yl)amino]ethanol Chemical compound CC(C)N(C)CCO OFRNAQFDQREXMU-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は新規なフオトレジスト現像液組成物に
関し、特に実質上金属イオンの無いフオトレジス
ト現像剤水溶液に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a novel photoresist developer composition, and more particularly to an aqueous photoresist developer solution that is substantially free of metal ions.
（従来の技術及び発明が解決しようとする課題）
化学線照射で像形成のために露光したポジ型フ
オトレジストから像を発現させる現像には水性ア
ルカリ現像液が広く用いられている。フオトレジ
ストの化学線照射に露光された領域は、アルカリ
に可溶となつていて水性アルカリ現像液で除去さ
れる。未露光のフオトレジストの領域はアルカリ
現像液に容易には溶解せず、フオトレジストの露
光及び未露光部分の間の溶解度の相異が所望のフ
オトレジスト像の現像を可能にしている。(Prior Art and Problems to be Solved by the Invention) Aqueous alkaline developers are widely used for developing images from positive photoresists exposed to actinic radiation to form images. The areas of the photoresist exposed to actinic radiation become alkaline soluble and are removed with an aqueous alkaline developer. The unexposed areas of the photoresist are not readily soluble in alkaline developers, and the difference in solubility between the exposed and unexposed portions of the photoresist allows development of the desired photoresist image.
金属イオン例えばナトリウム及びカリウムイオ
ンを含有する水性アルカリ現像液を用いた場合
は、現像後、フオトレジスト像と基板を金属イオ
ンの痕跡が全く無くなる迄、水で注意深くすすぐ
必要があるという欠点がある。金属イオンの痕跡
量を像基板上に残した場合には、イオンで汚染さ
れた基板から究極的に製造された半導体デバイス
の好ましからざる電気的因子の変化を惹起しかね
ない。これは集積回路の外形寸法がサブミクロン
のレベルで収縮し続けるという点で次第に重要化
している問題である。金属イオンの痕跡を徹底的
に除去するために高価な脱イオン水で徹底的にす
すぐ費用は（集積）回路の製造の全経費中の大き
な要素となつている。 The disadvantage of using aqueous alkaline developers containing metal ions, such as sodium and potassium ions, is that after development the photoresist image and substrate must be carefully rinsed with water until all traces of metal ions are removed. If traces of metal ions are left on the image substrate, they can cause undesirable electrical changes in semiconductor devices ultimately fabricated from the ion-contaminated substrate. This is an increasingly important problem as integrated circuit dimensions continue to shrink at the submicron level. The cost of thorough rinsing with expensive deionized water to thoroughly remove traces of metal ions is a major component of the overall cost of manufacturing (integrated) circuits.
従つて、極めて低い金属イオン含量の有機塩基
を水性アルカリ現像液の主成分として使用するこ
とに注意が向けられている。それで第４級アンモ
ニウムハイドロオキサイド例えばテトラメチルア
ンモニウムハイドロオキサイドを含有する水性現
像液が超小型電子回路の製造でポジ型フオトレジ
ストの現像に次第に利用されるようになつてい
る。然しかかる現像液は金属アルカリ系現像液よ
りも腐食性が強く、即ちフオトレジストの未露光
部分並びに露光部分を侵し、そしてしばしばフオ
トレジストの未露光領域のフイルム厚が大幅に減
少する結果となることが判明した。 Attention has therefore been directed to the use of organic bases with very low metal ion content as the main component of aqueous alkaline developers. Aqueous developers containing quaternary ammonium hydroxides, such as tetramethylammonium hydroxide, are therefore increasingly being utilized for developing positive photoresists in the manufacture of microelectronic circuits. However, such developers are more corrosive than metal-alkaline developers, i.e., they attack unexposed as well as exposed areas of the photoresist, and often result in a significant reduction in film thickness in the unexposed areas of the photoresist. There was found.
（課題を解決するための手段）
第４級アンモニウムハイドロオキサイドとＮ，
Ｎ−ジアルキルアルカノールアミンを組合せて含
有する水性現像液が極めて好ましい性質を有して
おり且つ活性成分として第４級アンモニウムハイ
ドロオキサイドのみを含有する現像液に比して実
用性能上著しくすぐれていることが今や見出され
た。(Means for solving the problem) Quaternary ammonium hydroxide and N,
An aqueous developer containing a combination of N-dialkylalkanolamines has extremely favorable properties and is significantly superior in practical performance to a developer containing only quaternary ammonium hydroxide as an active ingredient. has now been discovered.
従つて本発明は実質上金属イオンが存在するこ
との無い、そして活性成分が(a)第４級アンモニウ
ムハイドロオキサイドと(b)Ｎ，Ｎ−ジアルキルア
ルカノールアミンより成るポジ型フオトレジスト
現像剤水溶液より成る。成分(a)の成分(b)に対する
重量比は１：１乃至１：８の範囲である。現像剤
溶液中の成分(a)と成分(b)の合計量は好ましくは１
乃至30重量％の範囲、そしてより好ましくは４乃
至12重量％の範囲である。 Therefore, the present invention provides an aqueous positive photoresist developer solution which is substantially free of metal ions and whose active ingredients are (a) quaternary ammonium hydroxide and (b) N,N-dialkylalkanolamine. Become. The weight ratio of component (a) to component (b) ranges from 1:1 to 1:8. The total amount of component (a) and component (b) in the developer solution is preferably 1
It ranges from 30% to 30% by weight, and more preferably from 4 to 12% by weight.
本発明の現像剤溶液に使用できる第４級アンモ
ニウムハイドロオキサイドの代表例は、テトラア
ルキル第４級アンモニウムハイドロオキサイド例
えばテトラメチル−、テトラエチル、テトライソ
プロピル−、テトラブチル、ジメチルジエチル
−、トリメチルエチル、テトラペンチル−及びテ
トラヘキシル−アンモニウムハイドロオキサイド
等；トリアルキルアラルキルアンモニウムハイド
ロオキサイド例えばトリメチルベンジル−、トリ
エチルベンジル−、メチルエチルイソプロピルベ
ンジル−アンモニウムハイドロオキサイド等；及
びＮ−ヒドロキシアルキル−Ｎ，Ｎ，Ｎ−トリア
ルキルアンモニウムハイドロオキサイド例えばＮ
−ヒドロキシエチル−トリメチルアンモニウムハ
イドロオキサイド（コリン）、Ｎ−ヒドロキシエ
チル−トリエチルアンモニウムハイドロオキサイ
ド、Ｎ−ヒドロキシプロピル−トリメチルアンモ
ニウムハイドロオキサイド等である。好ましい群
はテトラアルキル第４級アンモニウムハイドロオ
キサイドであり、好ましい化合物はテトラメチル
アンモニウムハイドロオキサイドである。 Typical examples of quaternary ammonium hydroxides that can be used in the developer solution of the present invention include tetraalkyl quaternary ammonium hydroxides such as tetramethyl, tetraethyl, tetraisopropyl, tetrabutyl, dimethyldiethyl, trimethylethyl, tetrapentyl. - and tetrahexyl-ammonium hydroxide, etc.; trialkylaralkylammonium hydroxide such as trimethylbenzyl-, triethylbenzyl-, methylethylisopropylbenzyl-ammonium hydroxide, etc.; and N-hydroxyalkyl-N,N,N-trialkylammonium Hydroxide such as N
-Hydroxyethyl-trimethylammonium hydroxide (choline), N-hydroxyethyl-triethylammonium hydroxide, N-hydroxypropyl-trimethylammonium hydroxide, and the like. A preferred group are the tetraalkyl quaternary ammonium hydroxides, and a preferred compound is tetramethylammonium hydroxide.
Ｎ，Ｎ−ジアルキルアルカノールアミンの代表
例は、Ｎ，Ｎ−ジメチルエタノールアミン、Ｎ，
Ｎ−ジエチルエタノールアミン、Ｎ，Ｎ−ジイソ
プロピルエタノールアミン、Ｎ，Ｎ−ジメチルイ
ソプロパノールアミン、Ｎ，Ｎ−ジブチルエタノ
ールアミン、Ｎ−メチル−Ｎ−イソプロピルエタ
ノールアミン、Ｎ−メチル−Ｎ−ヘキシルエタノ
ールアミン、Ｎ，Ｎ−ジエチルブタノールアミン
等である。好ましい群はＮ，Ｎ−ジアルキルエタ
ノールアミンであり、好ましい化合物はＮ，Ｎ−
ジエチルエタノールアミンである。 Representative examples of N,N-dialkylalkanolamines include N,N-dimethylethanolamine, N,
N-diethylethanolamine, N,N-diisopropylethanolamine, N,N-dimethylisopropanolamine, N,N-dibutylethanolamine, N-methyl-N-isopropylethanolamine, N-methyl-N-hexylethanolamine, N,N-diethylbutanolamine and the like. A preferred group is N,N-dialkylethanolamines, and preferred compounds are N,N-dialkylethanolamines.
Diethylethanolamine.
本発明の現像剤溶液は成分をそれぞれ、適切な
量と割合で、適当な量の脱イオン水に溶解するだ
けで調製される。成分を溶液にする順序は臨界的
では無い。 The developer solution of the present invention is prepared by simply dissolving each of the components in the appropriate amounts and proportions in the appropriate amount of deionized water. The order in which the components are brought into solution is not critical.
成分(a)及び(b)以外に、本発明の現像剤溶液は他
の任意的な、従来の現像剤溶液に使用されている
添加剤成分も含有し得る、但しかかる添加剤は実
質上金属イオンが無いという条件が付く。かかる
添加剤の例は極めて低い金属イオン含量の非イオ
ン及び他の型の界面活性剤である。 Besides components (a) and (b), the developer solutions of the present invention may also contain other optional additive components used in conventional developer solutions, provided that such additives are substantially metallic. The condition is that there are no ions. Examples of such additives are non-ionic and other types of surfactants with very low metal ion content.
本発明は、像形成用に化学線照射に露光させた
ポジ型フオトレジスト層に本発明の現像剤溶液を
作用させることを特徴とするポジ型フオトレジス
トの現像方法でもある。この方法は当業者に知ら
れた手段と装置を用いて実施できる。例示的には
現像すべきフオトレジスト潜像層に、好ましくは
この目的に適した市販の装置を用いて、現像剤溶
液を散布する。別の方法ではフオトレジスト潜像
層と基板を、所望の像の現像に必要な適切な一般
に１分のオーダの時間の間、現像剤溶液の浴に浸
漬する。現像した像層は、現像にどの方法を使用
しても、次に脱イオン水ですすいで、次の製造工
程にく前に乾燥する。 The present invention is also a method for developing a positive-working photoresist, characterized in that a developer solution of the invention is applied to a positive-working photoresist layer that has been exposed to actinic radiation for image formation. This method can be carried out using means and equipment known to those skilled in the art. Illustratively, the photoresist latent image layer to be developed is sprayed with a developer solution, preferably using commercially available equipment suitable for this purpose. In another method, the latent photoresist image layer and substrate are immersed in a bath of developer solution for a suitable period of time, generally on the order of one minute, necessary to develop the desired image. The developed image layer, regardless of the method used for development, is then rinsed with deionized water and dried before further manufacturing steps.
露光（現像）した像の壁が定在波的外観を殆ど
示さない事及び現像工程で起こるフイルム厚の減
少が著しく少なくなつた点で、本発明の現像剤溶
液が成分(a)のみを含有する対応する現像剤溶液よ
りも性状がすぐれていることが明らかとなつた。
かかる特徴の利点は当業者に容易に了解されよ
う。 The developer solution of the present invention contains only component (a) in that the walls of the exposed (developed) image hardly exhibit a standing wave appearance and that the reduction in film thickness that occurs during the development process is significantly reduced. It was found that the properties were superior to those of the corresponding developer solution.
The advantages of such features will be readily apparent to those skilled in the art.
以下の実施例は本発明の方法と現像剤組成物及
び発明の実施方法を例示しようとするものであつ
て、発明を限定しようとするものでは無い。 The following examples are intended to illustrate the methods and developer compositions of the present invention and methods of carrying out the invention, and are not intended to limit the invention.
実施例 １
テトラメチルアンモニウムハイドロオキサイド
の25％ｗ／ｗ水溶液の4.36量部、Ｎ，Ｎ−ジエチ
ルエタノールアミンの8.47重量部と脱イオン水の
87.17重量部を混合して本発明の現像剤溶液を調
製した。Example 1 4.36 parts by weight of a 25% w/w aqueous solution of tetramethylammonium hydroxide, 8.47 parts by weight of N,N-diethylethanolamine and deionized water.
A developer solution of the present invention was prepared by mixing 87.17 parts by weight.
シリコンウエーハーを、ノボラツク樹脂と２−
ジアゾ−１−オキソナフトキノン−５−スルホン
酸のトリヒドロキシベンゾフエノンエステルの溶
液混合溶液［ULTRAMACtmPR914：MacDer−
mid.Inc.，Waterbury，Ct.］から成る高分解能、
高コントラスト、高アスペクト比ポジ型フオトレ
ジスト系を用いて5000rpmでスピン被覆した。得
られた被膜は対流炉で100℃で30分ベーキング後
に1.2ミクロンの平均厚を有していた。被膜は
Orielプリンターを用いてマスクを通して紫外光
に広域接触して像形成のために露光させたた。ウ
エーハーを次に上述の現像剤溶液の浴に60秒浸漬
し、脱イオン水ですすいで空気乾燥した。このよ
うに現像した像を顕微鏡的に検査したところ、目
立つた定在波的外観は見られなかつた。現像の結
果、像のフイルムの厚さの目立つた減少はなかつ
た。 Silicon wafer and novolac resin 2-
Solution mixture of trihydroxybenzophenone ester of diazo-1-oxonaphthoquinone-5-sulfonic acid [ULTRAMAC tm PR914: MacDer-
mid.Inc., Waterbury, Ct.]
A high contrast, high aspect ratio positive photoresist system was used to spin coat at 5000 rpm. The resulting coating had an average thickness of 1.2 microns after baking for 30 minutes at 100°C in a convection oven. The coating is
Images were exposed using an Oriel printer with broad-area exposure to ultraviolet light through a mask. The wafer was then immersed in a bath of the developer solution described above for 60 seconds, rinsed with deionized water, and air dried. Microscopic examination of the image thus developed revealed no noticeable standing wave appearance. Development resulted in no noticeable decrease in image film thickness.
実施例 ２
テトラメチルアンモニウムハイドロオキサイド
の25％ｗ／ｗ水溶液の6.44重部、Ｎ，Ｎ−ジエチ
ルエタノールアミンの6.44重量部と脱イオン水の
87.12重量部を混合して本発明の現像剤溶液を調
製した。Example 2 6.44 parts by weight of a 25% w/w aqueous solution of tetramethylammonium hydroxide, 6.44 parts by weight of N,N-diethylethanolamine and deionized water.
A developer solution of the present invention was prepared by mixing 87.12 parts by weight.
実施例 ３
テトラメチルアンモニウムハイドロオキサイド
の25％ｗ／ｗ水溶液の3.75重量部、Ｎ，Ｎ−ジエ
チルエタノールアミンの7.28重量部と脱イオン水
の88.97重量部を混合して本発明の現像剤溶液を
調製した。Example 3 A developer solution of the present invention is prepared by mixing 3.75 parts by weight of a 25% w/w aqueous solution of tetramethylammonium hydroxide, 7.28 parts by weight of N,N-diethylethanolamine, and 88.97 parts by weight of deionized water. Prepared.
Claims (1)
ドロオキサイド及び(b)Ｎ，Ｎ−ジアルキルアルカ
ノールアミンを含有し、成分(a)の成分(b)に対する
重量比が１：１乃至１：８の範囲であり且つフオ
トレジスト現像剤水溶液中の(a)＋(b)の重量％が１
乃至30の範囲であることを特徴とする実質上金属
イオンのないフオトレジスト現像剤水溶液。 ２ 該第４級アンモニウムハイドロオキサイドが
テトラアルキルアンモニウムハイドロオキサイド
である請求項１記載のフオトレジスト現像剤水溶
液。 ３ 該テトラアルキルアンモニウムハイドロオキ
サイドがテトラメチルアンモニウムハイドロオキ
サイドである請求項２記載のフオトレジスト現像
剤水溶液。 ４ 該Ｎ，Ｎ−ジアルキルアルカノールアミンが
Ｎ，Ｎ−ジアルキルエタノールアミンである請求
項１記載のフオトレジスト現像剤水溶液。 ５ 該Ｎ，Ｎ−ジアルキルエタノールアミンが
Ｎ，Ｎ−ジエチルエタノールアミンである請求項
４記載のフオトレジスト現像剤水溶液。 ６ 成分(a)と(b)とを実質上等しい重量で存在させ
た請求項１記載のフオトレジスト現像剤水溶液。 ７ 該溶液中の(a)＋(b)の合計量が４乃至12重量％
の範囲にある請求項１記載のフオトレジスト現像
剤水溶液。 ８ 第４級アンモニウムハイドロオキサイドがテ
トラメチルアンモニウムハイドロオキサイドであ
りＮ，Ｎ−ジアルキルアルカノールアミンがＮ，
Ｎ−ジエチルエタノールアミンであり前者：後者
の重量比が１：１乃至１：８であり、且つ両者の
合計量が１乃至30重量％である請求項１記載のフ
オトレジスト現像剤水溶液。 ９ テトラメチルアンモニウムハイドロオキサイ
ド：Ｎ，Ｎ−ジエチルエタノールアミンの重量比
が１：１乃至１：7.8の範囲であり、且つ該溶液
中の(a)＋(b)の合計量が４乃至12重量％の範囲であ
る請求項８記載のフオトレジスト現像剤水溶液。 １０ 像形成用化学線照射に露光させたポジ型フ
オトレジスト層に請求項１記載の現像剤水溶液を
作用させることを特徴とするポジ型フオトレジス
トの現像方法。 １１ 像形成用化学照射に露光させたポジ型フオ
トレジスト層に請求項８記載の現像剤水溶液を作
用させることを特徴とするポジ型フオトレジスト
の現像方法。[Claims] 1 Contains (a) quaternary ammonium hydroxide and (b) N,N-dialkylalkanolamine as active ingredients, and the weight ratio of component (a) to component (b) is 1: 1 to 1:8, and the weight % of (a) + (b) in the photoresist developer aqueous solution is 1
1. An aqueous photoresist developer solution substantially free of metal ions, characterized in that the aqueous solution has an aqueous solution of a photoresist developer having an aqueous solution having an aqueous content ranging from 30 to 30. 2. The photoresist developer aqueous solution according to claim 1, wherein the quaternary ammonium hydroxide is a tetraalkylammonium hydroxide. 3. The aqueous photoresist developer solution according to claim 2, wherein the tetraalkylammonium hydroxide is tetramethylammonium hydroxide. 4. The aqueous photoresist developer solution according to claim 1, wherein the N,N-dialkylalkanolamine is N,N-dialkylethanolamine. 5. The aqueous photoresist developer solution according to claim 4, wherein the N,N-dialkylethanolamine is N,N-diethylethanolamine. 6. The photoresist developer aqueous solution according to claim 1, wherein components (a) and (b) are present in substantially equal weights. 7 The total amount of (a) + (b) in the solution is 4 to 12% by weight
The photoresist developer aqueous solution according to claim 1, which falls within the range of . 8 The quaternary ammonium hydroxide is tetramethylammonium hydroxide, and the N,N-dialkylalkanolamine is N,
2. The photoresist developer aqueous solution according to claim 1, wherein the aqueous photoresist developer solution is N-diethylethanolamine, and the weight ratio of the former to the latter is 1:1 to 1:8, and the total amount of both is 1 to 30% by weight. 9 The weight ratio of tetramethylammonium hydroxide:N,N-diethylethanolamine is in the range of 1:1 to 1:7.8, and the total amount of (a) + (b) in the solution is 4 to 12 weight 9. The photoresist developer aqueous solution according to claim 8, wherein the photoresist developer aqueous solution is in the range of %. 10. A method for developing a positive photoresist, which comprises causing an aqueous developer solution according to claim 1 to act on a positive photoresist layer that has been exposed to actinic radiation for image formation. 11. A method for developing a positive photoresist, which comprises causing an aqueous developer solution according to claim 8 to act on a positive photoresist layer that has been exposed to chemical radiation for image formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151866A JPH02151866A (en) | 1990-06-11 |
| JPH0541980B2 true JPH0541980B2 (en) | 1993-06-25 |
Family
ID=17783097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29253988A Granted JPH02151866A (en) | 1988-11-21 | 1988-11-21 | Photoresist developing liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151866A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2292572A1 (en) * | 1998-04-15 | 1999-10-21 | Zoilo Cheng Ho Tan | Photoresist developer and method of development |
| JP5169658B2 (en) * | 2008-09-11 | 2013-03-27 | 東ソー株式会社 | Resist developer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3886971T2 (en) * | 1987-04-06 | 1994-05-19 | Hoechst Celanese Corp | High-contrast positive photoresist developer with alkanolamine. |
-
1988
- 1988-11-21 JP JP29253988A patent/JPH02151866A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02151866A (en) | 1990-06-11 |
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