JPH02140863U - - Google Patents

Info

Publication number
JPH02140863U
JPH02140863U JP4901489U JP4901489U JPH02140863U JP H02140863 U JPH02140863 U JP H02140863U JP 4901489 U JP4901489 U JP 4901489U JP 4901489 U JP4901489 U JP 4901489U JP H02140863 U JPH02140863 U JP H02140863U
Authority
JP
Japan
Prior art keywords
layer
substrate
groove
stepped
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4901489U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4901489U priority Critical patent/JPH02140863U/ja
Publication of JPH02140863U publication Critical patent/JPH02140863U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す断面図、第２
図ａ〜ｃは第１図に示した縦型薄膜トランジスタ
の製造方法の一例を示す製造工程図、第３図は従
来の縦型薄膜トランジスタを示す断面図である。 １１……基板、１２……段差加工層、１３……
ゲート電極、１３ａ……突出部、１４……溝部、
１５……ゲート絶縁層、１６……ａ−Ｓｉ半導体
層、１７……ｎ＋−ａ−Ｓｉ層、１５ａ，１６ａ
，１７ａ……凹形状部、１８……ソース電極、１
９……ドレイン電極、２０……チヤネル部。

Claims (1)

  1. 【実用新案登録請求の範囲】 絶縁性の基板上に段差加工層を形成し、この段
    差加工層上にこの段差加工層よりも横方向に突出
    して設けられ、その突出部と前記基板との間に溝
    部を形成するゲート電極と、 該ゲート電極上から前記基板上へかけて前記突
    出部及び前記溝部を覆つて設けられ、該溝部に対
    応した凹形状部を表面に有するゲート絶縁層と、 該ゲート絶縁層上にその凹形状部及び側壁面を
    介して設けられた半導体層と、 該半導体層上に、その側壁面上を除き上下に分
    離して設けられたソース及びドレイン電極とを有
    することを特徴とする縦型薄膜トランジスタ。
JP4901489U 1989-04-26 1989-04-26 Pending JPH02140863U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4901489U JPH02140863U (ja) 1989-04-26 1989-04-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4901489U JPH02140863U (ja) 1989-04-26 1989-04-26

Publications (1)

Publication Number Publication Date
JPH02140863U true JPH02140863U (ja) 1990-11-26

Family

ID=31566338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4901489U Pending JPH02140863U (ja) 1989-04-26 1989-04-26

Country Status (1)

Country Link
JP (1) JPH02140863U (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011106165A1 (en) * 2010-02-26 2011-09-01 Eastman Kodak Company Vertical transistor including reentrant profile
WO2011106337A1 (en) * 2010-02-26 2011-09-01 Eastman Kodak Company Methods of making transistor including reentrant profile
WO2012094109A1 (en) * 2011-01-07 2012-07-12 Eastman Kodak Company Transistor including reduced channel length
WO2012094353A1 (en) * 2011-01-07 2012-07-12 Eastman Kodak Company Transistor including multi-layer reentrant profile
WO2012094357A3 (en) * 2011-01-07 2012-09-07 Eastman Kodak Company Transistor including multiple reentrant profiles
WO2013126261A1 (en) * 2012-02-22 2013-08-29 Eastman Kodak Company Circuit including vertical transistors
WO2014204884A1 (en) * 2013-06-19 2014-12-24 Eastman Kodak Company Four terminal transistor
WO2015134082A1 (en) * 2014-03-06 2015-09-11 Eastman Kodak Company Vtft with polymer core
WO2016200626A1 (en) * 2015-06-12 2016-12-15 Eastman Kodak Company Vertical and planar tfts on common substrate
EP3657550A3 (en) * 2018-11-20 2020-08-12 LG Display Co., Ltd. Transistor having vertical structure and electric device comprising the same

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9337828B2 (en) 2010-02-26 2016-05-10 Eastman Kodak Company Transistor including reentrant profile
WO2011106337A1 (en) * 2010-02-26 2011-09-01 Eastman Kodak Company Methods of making transistor including reentrant profile
CN102782821A (zh) * 2010-02-26 2012-11-14 伊斯曼柯达公司 包括凹进轮廓的垂直晶体管
JP2013520844A (ja) * 2010-02-26 2013-06-06 イーストマン コダック カンパニー 内側にへこんだ形状を含んだトランジスタを製造する方法
JP2013520839A (ja) * 2010-02-26 2013-06-06 イーストマン コダック カンパニー 内側にへこんだ形状を含んだ縦型トランジスタ
WO2011106165A1 (en) * 2010-02-26 2011-09-01 Eastman Kodak Company Vertical transistor including reentrant profile
US8803203B2 (en) 2010-02-26 2014-08-12 Eastman Kodak Company Transistor including reentrant profile
WO2012094109A1 (en) * 2011-01-07 2012-07-12 Eastman Kodak Company Transistor including reduced channel length
WO2012094353A1 (en) * 2011-01-07 2012-07-12 Eastman Kodak Company Transistor including multi-layer reentrant profile
WO2012094357A3 (en) * 2011-01-07 2012-09-07 Eastman Kodak Company Transistor including multiple reentrant profiles
CN103314445A (zh) * 2011-01-07 2013-09-18 柯达公司 包含多重凹入外形的晶体管
WO2013126261A1 (en) * 2012-02-22 2013-08-29 Eastman Kodak Company Circuit including vertical transistors
WO2014204884A1 (en) * 2013-06-19 2014-12-24 Eastman Kodak Company Four terminal transistor
WO2015134082A1 (en) * 2014-03-06 2015-09-11 Eastman Kodak Company Vtft with polymer core
WO2016200626A1 (en) * 2015-06-12 2016-12-15 Eastman Kodak Company Vertical and planar tfts on common substrate
EP3657550A3 (en) * 2018-11-20 2020-08-12 LG Display Co., Ltd. Transistor having vertical structure and electric device comprising the same
US11177390B2 (en) 2018-11-20 2021-11-16 Lg Display Co., Ltd. Transistor having vertical structure and electric device
US11777037B2 (en) 2018-11-20 2023-10-03 Lg Display Co., Ltd. Transistor having vertical structure and electric device

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