JPH02129913A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02129913A JPH02129913A JP28280188A JP28280188A JPH02129913A JP H02129913 A JPH02129913 A JP H02129913A JP 28280188 A JP28280188 A JP 28280188A JP 28280188 A JP28280188 A JP 28280188A JP H02129913 A JPH02129913 A JP H02129913A
- Authority
- JP
- Japan
- Prior art keywords
- atomic layer
- atoms
- raw material
- tmg
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000002994 raw material Substances 0.000 claims abstract description 24
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001179 sorption measurement Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- 125000004429 atom Chemical group 0.000 abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910052733 gallium Inorganic materials 0.000 abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明はＧａを含む化合物半導体の形成、典型的にはＧ
ａＡｓ、の原子層エピタキシャル成長に関し、
Ｇａ層吸着に於けるセルフリミテイング効果を明確なら
しめると共に、エピタキシャル成長層の不純物濃度増加
を抑制することを目的とし、Ｇａ原子層を基板原子面上
に吸着させる際に、先ずトリエチルガリウム（Ｔ Ｅ
Ｇ）を原料として１原子層を越えるＧａ吸着が生じるこ
とのない程度にＧａ原子を吸着させ、
次いでトリメチルガリウム（Ｔ Ｍ Ｇ）を原料とし、
前記１原子層に不足するＧａを吸着させてＩＧａ原子層
を完成させる工程を包含して構成される。[Detailed Description of the Invention] [Summary] The present invention relates to the formation of a compound semiconductor containing Ga, typically G
Regarding the atomic layer epitaxial growth of aAs, the purpose of this study is to clarify the self-limiting effect in Ga layer adsorption and to suppress the increase in impurity concentration in the epitaxially grown layer. First, triethyl gallium (TE
G) is used as a raw material to adsorb Ga atoms to an extent that Ga adsorption of more than one atomic layer does not occur, then trimethyl gallium (TMG) is used as a raw material,
The method includes a step of adsorbing Ga lacking in one atomic layer to complete an IGa atomic layer.
本発明はＧａＡｓの気相エピタキシャル成長法を含む半
導体装置の製造方法に関わり、特に、Ｇａのアルキル化
物を用いて行われる原子層エピタキシャル成長に関わる
。The present invention relates to a method for manufacturing a semiconductor device including a GaAs vapor phase epitaxial growth method, and particularly to atomic layer epitaxial growth performed using an alkylated Ga.
近年、高電子移動度トランジスタ（Ｉ（ＥＭＴ）のよう
なヘテロ接合型の素子や超格子構造を利用した高性能素
子の開発が進められている。そのような素子では、ヘテ
ロ接合や超格子を形成する化合物半導体の組成や厚さを
原子層単位で制御して形成しなければならず、各種半導
体材料の原子層エピタキシャル成長技術の確立が強く要
望されている。In recent years, the development of high-performance devices using heterojunction type devices and superlattice structures such as high electron mobility transistors (I (EMT)) has been progressing. The composition and thickness of compound semiconductors to be formed must be controlled on an atomic layer basis, and there is a strong desire to establish atomic layer epitaxial growth techniques for various semiconductor materials.
化合物半導体を原子層エピタキシャル成長させる場合、
一方の組成の原料を供給してその元素の層を１原子層だ
け吸着させ、次に原料ガスを切り換えて他方を１原子層
成だけ長させることの繰り返しによって、必要な層数の
化合物半導体層を形成することが基本的な処理である。When growing compound semiconductors by atomic layer epitaxial growth,
By repeating the process of supplying a raw material of one composition to adsorb one atomic layer of that element, then switching the raw material gas and growing the other one atomic layer, the required number of compound semiconductor layers can be formed. The basic process is to form .
化合物半導体を構成する一つの元素を１原子層に限定し
て吸着させようとする場合、原料分子の化学的性質や成
長層の結晶構造によって住するセルフリミティング効果
を利用することは殆ど不可欠の要件となっている。When trying to limit the adsorption of one element constituting a compound semiconductor to one atomic layer, it is almost essential to utilize the self-limiting effect that exists depending on the chemical properties of the raw material molecules and the crystal structure of the growth layer. It is a requirement.
通常ＧａＡｓの原子層エピタキシーでは、Ｇａの原料と
してＴ Ｍ Ｇ （（ＣＨ２） ５Ｇａ）が、Ａｓの原
料としてアルシン（Ａ３Ｈりが用いられる。Normally, in atomic layer epitaxy of GaAs, TMG ((CH2) 5Ga) is used as a raw material for Ga, and arsine (A3H) is used as a raw material for As.
その場合のＧａ吸着については、先ずＴＭＧ分子中のＧ
ａが基板に吸着した後に分子が分解して基板面にＧａが
残るという形でＧａ原子層が形成されると考えられてお
り、そのためＧａ上にＧａが堆積することは起こり難く
、従ってセルフリミティング効果が明瞭に現れることに
なる。Regarding Ga adsorption in that case, first, G in the TMG molecule
It is believed that a Ga atomic layer is formed by the molecules decomposing after a is adsorbed to the substrate and Ga remains on the substrate surface. Therefore, it is difficult for Ga to be deposited on Ga, and therefore self-limiting occurs. The ting effect will be clearly visible.
また、ＧａＡｓを１原子層毎に原料を切り換えて成長さ
せるのではなく、ＧａとＡｓの原料を同時に供給し、化
合物としてＧａＡｓＪｉを成長させる場合には、Ｔ Ｅ
Ｇ （（ＣｚＨｓ） ３Ｇａ） とアルシンを用い
ることがある。In addition, when growing GaAsJi as a compound by supplying Ga and As raw materials at the same time, instead of growing GaAs by switching the raw materials for each atomic layer, T E
G ((CzHs) 3Ga) and arsine may be used.
ＧａＡｓのエピタキシャル成長では、ＴＭＧを原料とし
た場合にはセルフリミティング効果が明瞭に現れ、原子
層エピタキシーが可能であるが、成長層中に炭素（Ｃ）
が不純物として含まれることが多い。炭素はｐ型の不純
物であり、ＧａＡｓでは通常ｎ型層に素子が形成される
から、これは大きな問題となる。In the epitaxial growth of GaAs, when TMG is used as a raw material, a self-limiting effect clearly appears and atomic layer epitaxy is possible, but carbon (C) is present in the growth layer.
are often included as impurities. This poses a major problem since carbon is a p-type impurity and GaAs devices are usually formed in n-type layers.
一方、ＴＥＣ，を原料とするＧａＡｓエピタキシャル成
長では、成長層中に炭素が不純物として含まれることは
ないが、ＴＥＧによるＧａ吸着ではセルフリミティング
効果が現れず、原子層エピタキシーを行うことが困難で
ある。On the other hand, in GaAs epitaxial growth using TEC as a raw material, carbon is not included as an impurity in the growth layer, but self-limiting effect does not appear in Ga adsorption by TEG, making it difficult to perform atomic layer epitaxy. .
本発明の目的は、セルフリミティング効果を利用した原
子層エピタキシーが可能で、然も成長層中の炭素不純物
が少ないエピタキシャル成長法を提供することである。An object of the present invention is to provide an epitaxial growth method that allows atomic layer epitaxy using the self-limiting effect and that reduces carbon impurities in the grown layer.
・上記目的を達成するた゛め、本発明の化合物半導体の
エピタキシャル成長法では、
先ずＴＥＧを原料とし、１原子層を越えるＧａ吸着が生
じることのない量のＧａ原子を吸着させ、次いでＴＭＧ
を原料とし、前記Ｇａ原子層で１原子層に不足するＧａ
原子を吸着させてＩＧａ原子層を完成させることが行わ
れる。- In order to achieve the above object, in the compound semiconductor epitaxial growth method of the present invention, TEG is first used as a raw material, Ga atoms are adsorbed in an amount that does not cause Ga adsorption exceeding one atomic layer, and then TMG is adsorbed in an amount that does not cause Ga adsorption exceeding one atomic layer.
is used as a raw material, and Ga lacking in one atomic layer in the Ga atomic layer is
Atoms are adsorbed to complete the IGa atomic layer.
本発明の典型的な実施例であるＧａＡｓの成長では、Ａ
ｓの原料としてアルシンが用いられ、化合物半導体を構
成する他の元素であるＡｓが供給される。In the growth of GaAs, which is a typical embodiment of the present invention, A
Arsine is used as a raw material for s, and As, which is another element constituting the compound semiconductor, is supplied.
［作 用］
第１図は本発明の基本処理を示す模式図であり、第２図
は本発明に現れる現象を模式的に説明する図である。以
下、これ等の図面を参照しながら本発明の詳細な説明す
る。[Operation] FIG. 1 is a schematic diagram showing the basic processing of the present invention, and FIG. 2 is a diagram schematically explaining the phenomenon that appears in the present invention. Hereinafter, the present invention will be described in detail with reference to these drawings.
先ず第１図が参照されるが、同図（ａ）１ら）及び（Ｃ
１は、ＴＥＧ、ＴＭＧ及びアルシンがリアクタに供給さ
れる状況を１サイクル分、横軸を共通の時間軸として示
しており、同図（ｄ）は同じ時間軸に於いて基板最表面
に存在するＧａ原子数を比率で示している。このＧａ原
子数の比率は、基板表面の全てが１原子層のＧａで覆わ
れた状態を１とするものである。First, reference is made to FIG. 1, which shows (a) 1 et al.) and (C
1 shows the situation in which TEG, TMG, and arsine are supplied to the reactor for one cycle, with the horizontal axis as a common time axis, and (d) in the same figure shows the supply of TEG, TMG, and arsine to the reactor on the top surface of the substrate on the same time axis. The number of Ga atoms is shown as a ratio. This ratio of the number of Ga atoms is 1 when the entire substrate surface is covered with one atomic layer of Ga.
図（ａ）に示されるように、Ｇａ層形成のために最初Ｔ
ＥＧが時間ｔ、だけ供給される。その間、基板最表面に
存在するＧａ原子は同図（ｄ）に示されるように、ＴＥ
Ｇの供給が停止されるまで増加してゆく。その場合、基
板面に吸着するＧａ原子は、基板面の如何なる位置に於
いても２原子層或いはそれ以上にならないようにＴＥＧ
供給時間１＋を調整する。As shown in Figure (a), for the formation of the Ga layer, T
EG is supplied for a time t. During this time, the Ga atoms present on the outermost surface of the substrate become TE
It increases until the supply of G is stopped. In that case, the Ga atoms adsorbed on the substrate surface are formed by TEG so that they do not become two atomic layers or more at any position on the substrate surface.
Adjust supply time 1+.
次に、Ｈ２ガスによるリアクタ内雰囲気の置換処理を挟
んで、同図（ロ）の如＜ＴＭＧが時間ｔ２だけ供給され
る。このＴＭＧによるＧａ原子の吸着は、上記ＴＥＧに
よるＧａ層の不足を補填する形で進行し、基板全面にＧ
ａ原子層が１層だけ形成されると、セルフリミティング
効果を示し、それ以上の吸着は起こらない。Next, after replacing the atmosphere in the reactor with H2 gas, TMG is supplied for a time t2 as shown in FIG. This adsorption of Ga atoms by TMG proceeds in a manner that compensates for the lack of Ga layer caused by TEG, and the entire surface of the substrate is covered with G.
When only one a-atomic layer is formed, a self-limiting effect is exhibited and no further adsorption occurs.
即ち同図（ｄ）に示されるように、ＴＭＧ供給時間ｔ２
では、基板表面のＧａ原子の比率は１に到達するまで増
加し、それ以上には上昇しない。即ちＧａは１原子層を
越えて多層に吸着することはない。That is, as shown in FIG. 2(d), the TMG supply time t2
Then, the ratio of Ga atoms on the substrate surface increases until it reaches 1 and does not increase beyond that. In other words, Ga is not adsorbed in more than one atomic layer.
その後、Ｈ２ガスによるリアクタ内雰囲気の置換処理を
挟んで、アルシンを時間ｔ、だけ供給することにより、
Ｇａ原子層上にＡｓ原子層を形成する。Ａｓは蒸気圧が
高く、セルフリミティング効果が顕著なので、ここでも
１原子層を越えて吸着することはない。After that, by supplying arsine for a time t with H2 gas replacing the atmosphere in the reactor,
An As atomic layer is formed on the Ga atomic layer. Since As has a high vapor pressure and a remarkable self-limiting effect, more than one atomic layer is not adsorbed here.
以上の処理に於けるＧａ原子の吸着状況を２次元モデル
によって図解したものが第２図である。FIG. 2 is a two-dimensional model illustrating the state of adsorption of Ga atoms in the above process.
以下、該図面を参照しながら基板面にＧａ原子が吸着す
る状況を説明する。Hereinafter, the situation in which Ga atoms are adsorbed to the substrate surface will be explained with reference to the drawings.
最初に、原料としてＴＥＧが供給されている間は、Ｇａ
原子は不規則に吸着して行く、但しＧａ原子の分布は巨
視的に均一ではなく、リアクタ内のガスの流れ等の影響
によって、同図（ａ）に示すように、高密度に吸着する
領域Ａと低密度に吸着する領域Ｂが生ずる。図中のＯが
この段階で吸着したＧａ原子を示している。Initially, while TEG is supplied as a raw material, Ga
Atoms are adsorbed irregularly, however, the distribution of Ga atoms is not macroscopically uniform, and due to the influence of gas flow in the reactor, there are regions where Ga atoms are adsorbed at high density, as shown in Figure (a). A region B is formed which adsorbs A and low density. O in the figure indicates Ga atoms adsorbed at this stage.
ＴＥＧ供給時間ｔ１を、高密度領域に於いても２原子層
或いはそれ以上のＧａ吸着が生じない範囲に設定して、
ＴＥＧの供給を停止し、次にＴＭＧを供給すると、ＴＭ
ＧによるＧａ′＠着はセルフリミティング効果を示すの
で、Ｇａ原子上には吸着せず、残された基板面上のみに
吸着し、同図（１））の如く１層のＧａ原子層を完成さ
せる。図中の◎はＴＭＧによるＧａ原子である。The TEG supply time t1 is set within a range where Ga adsorption of two atomic layers or more does not occur even in a high density region,
When the supply of TEG is stopped and then TMG is supplied, TM
Since Ga'@ deposition by G exhibits a self-limiting effect, it is not adsorbed on Ga atoms but only on the remaining substrate surface, and as shown in the same figure (1)), a single Ga atomic layer is formed. Finalize. ◎ in the figure is a Ga atom due to TMG.
このように、Ｇａ原子が２層或いはそれ以上にならない
範囲でＴＥＧによるＧａ吸着を進めておき、残りをＴＭ
ＧによるＧａ吸着で補填するようにすれば、不純物とし
てＣを含有することの少ないＧａを主とし、且つセルフ
リミティング効果によって正確に１原子層となるＧａ層
を形成することが可能である。In this way, the Ga adsorption by TEG is progressed to the extent that Ga atoms do not form two or more layers, and the rest is absorbed by TM.
By supplementing by Ga adsorption by G, it is possible to form a Ga layer that is mainly composed of Ga, which contains little C as an impurity, and has exactly one atomic layer due to the self-limiting effect.
第３図に本実施例で使用するエピタキシャル成長装置が
示されている。エピタキシャル成長の下地結晶である基
板ｌはサセプタ２に載せられ、反応管であるリアクタ３
内に設置される。ガスマニホールド４には、リアクタ内
部の置換ガスであるＨ２ガス、Ａ ｓ Ｈ３をＨ２で希
釈したガス、ＴＭＧをＨ２で希釈したガス及びＴＥＧを
Ｈ２で希釈したガスの４種のガスが送り込まれ、制御装
置によって選択されたガスがリアクタに送り出される。FIG. 3 shows an epitaxial growth apparatus used in this example. A substrate l, which is a base crystal for epitaxial growth, is placed on a susceptor 2, and a reactor 3, which is a reaction tube, is placed on a susceptor 2.
installed within. Four types of gas are fed into the gas manifold 4: H2 gas, which is a replacement gas inside the reactor, A s H3 diluted with H2, TMG diluted with H2, and TEG diluted with H2. Gases selected by the controller are delivered to the reactor.
原料ガスの供給は、単一種のガスを順次所定時間供給す
る形で行われ、そのサイクルが成長させる層数だけ繰り
返される。リアクタへのガス供給状態を安定なものにす
るため、各原料ガスは常に所定量を流しておき、リアク
タに供給されない時は直接排気系に送るようにするのが
通常である。The raw material gas is supplied by sequentially supplying a single type of gas for a predetermined period of time, and this cycle is repeated for the number of layers to be grown. In order to maintain a stable gas supply state to the reactor, it is common practice to always keep a predetermined amount of each raw material gas flowing, and to send it directly to the exhaust system when it is not being supplied to the reactor.
第４図に、本実施例に於ける各種原料ガスのりアクタへ
の供給状況が１サイクル分だけ示されている。以下、該
図面が参照される。FIG. 4 shows the supply status of various raw material gases to the glue actor in this embodiment for one cycle. Hereinafter, reference will be made to the drawings.
エピタキシャル成長開始前は、同図（ａ）に示されるよ
うに、置換ガスであるＨ２ガスが１００ ｄ／ｍｉ口の
流量で流されている。これは又、Ａｓ原子層の形成が終
了した状態でもある。Ｇａ原子の吸着は最初ＴＥＧによ
って行われ、バブリングによってＴＥＧが飽和したＨ２
ガスを、同図＠）に示す如く、１００ ｓｆ／ｗｉｎの
速度で３ ｓｅｃだけりアクタに送る。Before the start of epitaxial growth, as shown in FIG. 5(a), H2 gas, which is a replacement gas, is flowed at a flow rate of 100 d/mi. This is also the state in which the formation of the As atomic layer has been completed. Adsorption of Ga atoms is first performed by TEG, and by bubbling, TEG is saturated with H2.
Gas is sent to the actor at a rate of 100 sf/win for only 3 sec as shown in the same figure @).
これによって基板表面の大部分にＧａ原子が吸着するが
、この処理時間ではＧａ原子が１層を越えて堆積するこ
とはなく、部分的に未吸着の基板表面が残された状態と
なる。As a result, Ga atoms are adsorbed onto most of the substrate surface, but during this processing time, more than one layer of Ga atoms is not deposited, leaving a portion of the substrate surface that is not adsorbed.
その後、１秒だけＨ８ガスを流してリアクタ内のＴＥＧ
を排出した後、同図（Ｃ）に示す如く、ＴＭＧをキャリ
ヤ流量３００ Ｈ１／ｗｉｎの速度で０．５ ｓｅｃだ
けりアクタに送る。この処理によって基板表面の残され
た部分にＧａ原子が吸着し、ｌ原子層のＧａ層が形成さ
れる。既に述べたように、ＴＭＧによるＧａ吸着ではセ
ルフリミティング効果が顕著なので、Ｇａ原子層はｌ原
子層以上になることはない。After that, H8 gas was flowed for 1 second and the TEG inside the reactor was
After discharging TMG, as shown in the same figure (C), TMG is sent to the actor for only 0.5 sec at a carrier flow rate of 300 H1/win. Through this treatment, Ga atoms are adsorbed to the remaining portion of the substrate surface, forming a Ga layer of 1 atomic layer. As already mentioned, since the self-limiting effect is remarkable in Ga adsorption by TMG, the Ga atomic layer never exceeds 1 atomic layer.
再びＨｚガスによるリアクタ内ガスの置換を行い、同図
（ｄ）に示す如（、アルシンを４秒間リアクタに送る。The gas in the reactor was replaced with Hz gas again, and arsine was sent to the reactor for 4 seconds as shown in Figure (d).
このアルシンガスはＨ，によって１０％の濃度に希釈し
たもので、速度は１００ ａｆ／ｗｉｎである。これも
既に述べたように、Ａｓは蒸気圧が高く、セルフリミテ
ィング効果が顕著なので、１原子層だけＡｓ層が形成さ
れる。This arsine gas was diluted with H, to a concentration of 10%, and the rate was 100 af/win. As mentioned above, since As has a high vapor pressure and a remarkable self-limiting effect, the As layer is formed by only one atomic layer.
以上の処理がＧａＡｓ層を１層だけ形成する単位サイク
ルであり、これに続く１秒間のＨオガス送入がサイクル
開始時の状態に対応する。この単位サイクルを必要回数
繰り返すことにより、所定の原子層数のエピタキシャル
成長が行われる。The above process is a unit cycle for forming only one GaAs layer, and the subsequent 1 second supply of H gas corresponds to the state at the start of the cycle. By repeating this unit cycle a necessary number of times, epitaxial growth of a predetermined number of atomic layers is performed.
Ｃ発明の効果〕
以上説明した如く本発明では、Ｇａ原子の吸着を主とし
てＴＥＧによって行うことで、不純物となるＣ原子の取
り込みを抑制し、不足のＧａ原子の吸着はＴＭＧによっ
て行うことでセルフリミティング効果を生ぜしめ、過剰
の無いＧａ原子層の吸着形成を実現している。[Effects of the invention] As explained above, in the present invention, by adsorbing Ga atoms mainly by TEG, the incorporation of C atoms that become impurities is suppressed, and by adsorbing insufficient Ga atoms by TMG, self-limiting is achieved. This produces a tinging effect and realizes the adsorption formation of a Ga atomic layer without excess.
第１図は本発明の基本処理を示す模式図、第２図は本発
明に現れる現象を模式的に説明する図、
第３図は本実施例で使用するエピタキシャル成長装置を
示す模式図、
第４図は本実施例に於ける各種原料ガスのりアクタへの
供給状況を示す図
であって、
図に於いて
１は基手反、
２はサセプタ、
３はリアクタ、
４はガスマニホールド
である。
本発明の基本処理を示す模式図
第１図
（ａ）ＴＥＧによるＧａ１１１着
（ｂ）ＴＭＧによるＧａ吸着（補填）
０：ＴＥＧによるＧａ
＠：ＴＭＧによるＧａ
本発明に現れる現象を模式的に説明する図第２図FIG. 1 is a schematic diagram showing the basic processing of the present invention, FIG. 2 is a diagram schematically explaining the phenomena that appear in the present invention, FIG. 3 is a schematic diagram showing the epitaxial growth apparatus used in this example, The figure is a diagram showing the supply status of various raw material gases to the actuators in this embodiment. In the figure, 1 is a base plate, 2 is a susceptor, 3 is a reactor, and 4 is a gas manifold. Schematic diagram showing the basic processing of the present invention Figure 1 (a) Ga111 deposition by TEG (b) Ga adsorption (supplementation) by TMG 0: Ga by TEG @: Ga by TMG The phenomena appearing in the present invention will be schematically explained. Figure 2
Claims (1)
チルガリウム（ＴＥＧ）を原料として１原子層を越えて
Ｇａ吸着が生じることのない量のＧａ原子を吸着させ、 次いでトリメチルガリウム（ＴＭＧ）を原料とし、前記
Ｇａ原子層で１原子層に不足するＧａ原子を吸着させて
１原子層のＧａ層を完成させる工程を包含することを特
徴とする半導体装置の製造方法。[Scope of Claims] When adsorbing a Ga atomic layer on the atomic plane of a substrate, first, using triethyl gallium (TEG) as a raw material, adsorbing Ga atoms in an amount that does not cause Ga adsorption in excess of one atomic layer, and then A method for manufacturing a semiconductor device, comprising the step of using trimethyl gallium (TMG) as a raw material and adsorbing Ga atoms lacking in one atomic layer in the Ga atomic layer to complete a one atomic layer of Ga layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28280188A JPH02129913A (en) | 1988-11-09 | 1988-11-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28280188A JPH02129913A (en) | 1988-11-09 | 1988-11-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02129913A true JPH02129913A (en) | 1990-05-18 |
Family
ID=17657268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28280188A Pending JPH02129913A (en) | 1988-11-09 | 1988-11-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02129913A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295225A (en) * | 1990-04-12 | 1991-12-26 | Semiconductor Res Found | Formation of thin film |
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| JP2011071323A (en) * | 2009-09-25 | 2011-04-07 | Koito Mfg Co Ltd | Semiconductor element, and method of manufacturing the same |
| JP2014132683A (en) * | 2014-03-14 | 2014-07-17 | Koito Mfg Co Ltd | Semiconductor element and semiconductor element manufacturing method |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
-
1988
- 1988-11-09 JP JP28280188A patent/JPH02129913A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295225A (en) * | 1990-04-12 | 1991-12-26 | Semiconductor Res Found | Formation of thin film |
| US7781326B2 (en) | 2001-02-02 | 2010-08-24 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7732325B2 (en) | 2002-01-26 | 2010-06-08 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| JP2011071323A (en) * | 2009-09-25 | 2011-04-07 | Koito Mfg Co Ltd | Semiconductor element, and method of manufacturing the same |
| US9373687B2 (en) | 2009-09-25 | 2016-06-21 | Koito Manufacturing Co., Ltd. | Light emitting ceramic substrate including group-III nitride |
| JP2014132683A (en) * | 2014-03-14 | 2014-07-17 | Koito Mfg Co Ltd | Semiconductor element and semiconductor element manufacturing method |
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