JPH02122598A - Ceramic multilayer wiring board and manufacture thereof - Google Patents
Ceramic multilayer wiring board and manufacture thereofInfo
- Publication number
- JPH02122598A JPH02122598A JP27581288A JP27581288A JPH02122598A JP H02122598 A JPH02122598 A JP H02122598A JP 27581288 A JP27581288 A JP 27581288A JP 27581288 A JP27581288 A JP 27581288A JP H02122598 A JPH02122598 A JP H02122598A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- wiring board
- multilayer wiring
- ceramic multilayer
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 13
- 238000009413 insulation Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 241000132007 Bahia Species 0.000 description 2
- 229930194845 Bahia Natural products 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 235000017858 Laurus nobilis Nutrition 0.000 description 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229910011763 Li2 O Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ｋｇ若しくはＡｇ−Ｐｄｊ＃体を配線導体し
て使用したセラミック多層配線基板とその製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ceramic multilayer wiring board using kg or Ag-Pdj# body as a wiring conductor, and a method for manufacturing the same.
［従来の技術］
電子回路の小型化、高密度化に伴って、多層配線基板が
多く採用されている。なかでもセラミック多層配線基板
は、配線の高密度化が可能なため、広く採用されている
。[Prior Art] As electronic circuits become smaller and more densely packed, multilayer wiring boards are increasingly being used. Among these, ceramic multilayer wiring boards are widely used because they enable high wiring density.
このセラミック多層配線基板が広く採用されるに伴い、
これに対する製造コストの低減の要望が高まり、この要
望を満たす為に、様々な開発が進められている。例えば
、低温焼結可能なセラミック材料の開発を図り、これに
より焼成費用を低下させたり、配線導体を比較的低価格
の金属を主体とするペーストで形成する事が出来るよう
にする等の対策がその代表的な例である。これにより、
配線基板として必要とされる特性を維持したまま、製造
費用の削減が試みられ、その成果として、コストダウン
ンが図られてる。As this ceramic multilayer wiring board becomes widely adopted,
In response to this, there is an increasing demand for reducing manufacturing costs, and various developments are underway to meet this demand. For example, we are trying to develop ceramic materials that can be sintered at low temperatures, thereby reducing firing costs, and making it possible to form wiring conductors with pastes mainly made of relatively low-cost metals. This is a typical example. This results in
Attempts have been made to reduce manufacturing costs while maintaining the characteristics required for wiring boards, and as a result, cost reductions have been achieved.
セラミック多層配線基板は、未焼成セラミックシート上
に、導電性ペーストを所定の回路パターンに従って印刷
し、これを重ね合わせて圧若し、焼成して製造される。A ceramic multilayer wiring board is manufactured by printing conductive paste on an unfired ceramic sheet according to a predetermined circuit pattern, overlapping the sheets, pressing, and firing.
製造されたセラミック多層基板の模式的な構造を第１図
に示してあり、同図において、１は焼成されたセラミッ
ク基板、２セラミツク基板ｌの層間に形成された回路パ
ターンを形成する内部導体、４は積１ｎされたセラミッ
ク基板Ｉの表面に形成された回路パターンを形成する外
部導体、３はセラミック基板１の各層間の回路を接続す
るため、バアイアホールに充填されたホール導体である
。The schematic structure of the produced ceramic multilayer board is shown in Figure 1, in which 1 is a fired ceramic substrate, 2 is an internal conductor forming a circuit pattern formed between the layers of the ceramic substrate l; 4 is an external conductor forming a circuit pattern formed on the surface of the laminated ceramic substrate I; 3 is a hole conductor filled in a via hole for connecting circuits between layers of the ceramic substrate 1;
［発明が解決しようとする課題］
セラミック多層配線基板の前記導体２．３．４を形成す
るための材料となる印刷用の導電ペーストとしては、形
成された導体２．３．４の抵抗値が低い串、及び材料の
入手が比較的容易である串等の理由により、Ａｇ若しく
はＡｇ−Ｐｄ合金を主体とする導電ペーストが一般に用
いられている。[Problems to be Solved by the Invention] As a conductive paste for printing, which is a material for forming the conductor 2.3.4 of the ceramic multilayer wiring board, the resistance value of the formed conductor 2.3.4 is Conductive pastes based on Ag or Ag-Pd alloys are generally used because of the low skewers and relatively easy availability of skewers.
Ａｇペーストを用い゛Ｃ回路パターンが印刷されたセラ
ミック多層配線基板は、大気中で８５０〜９００°Ｃ程
度の温度で焼成されている。これは、Ａｇの融点が約９
６０°Ｃである事から９００℃以上の温度で焼成すると
、Ａｇがセラミック中に拡散し、これが原因でセラミッ
クの絶縁性の低下や、回路を構成している導体の抵抗値
の増大を招くためである。A ceramic multilayer wiring board on which a C circuit pattern is printed using Ag paste is fired in the atmosphere at a temperature of about 850 to 900°C. This means that the melting point of Ag is approximately 9
Since the temperature is 60°C, if fired at a temperature of 900°C or higher, Ag will diffuse into the ceramic, which will cause a decrease in the insulation properties of the ceramic and an increase in the resistance value of the conductors that make up the circuit. It is.
しかし一方において、多層配線基板を構成するセラミッ
ク絶縁材料を、８５０〜９００°Ｃという低い温度で焼
成しようとする場合は、セラミック材料の中にガラス成
分を多（含ませなければならないため、焼成後の抗折強
度が低下するという問題が生じる。However, on the other hand, when firing the ceramic insulating material that makes up the multilayer wiring board at a low temperature of 850 to 900°C, the ceramic material must contain a large amount of glass component, so A problem arises in that the bending strength of the steel decreases.
このような欠点を解消しようとして試みられた手段に、
導体ペーストとしてＡｇ−Ｐｄ合金を主体とするものを
用いて、基板を積層後、これを９００〜１０００℃の温
度で焼成する方法がある。しかし、導体としてＡｇ−Ｐ
ｄ合金を用いた場合、導体にＡｇを用いた場合と比較し
て、回路を構成する導体の抵抗値が約３倍以上も高４な
る言う欠点があり、限られた分野にしか利用出来ない。Measures that have been attempted to overcome these shortcomings include:
There is a method in which substrates are laminated using a conductive paste mainly composed of an Ag-Pd alloy and then fired at a temperature of 900 to 1000°C. However, as a conductor, Ag-P
When using d-alloy, there is a disadvantage that the resistance value of the conductor that makes up the circuit is about three times higher than when using Ag for the conductor, so it can only be used in limited fields. .
本発明の目的は、上記課題を解消する事ができるセラミ
ック多層配線基板とその製造方法を提供する１１にある
。An object of the present invention is to provide a ceramic multilayer wiring board and a method for manufacturing the same that can solve the above problems.
［課題を解消する為の手段］
すなわち、上記目的を達成する為の手段の要旨は、第一
に、多層に積層されたセラミックシートの表面及び層間
にＡｇ若しくはＡｇ合金を含む導体を有するセラミック
多層配線基板に於いて、セラミックと導体が低酸素濃度
雰囲気中で焼成されたセラミック多層配線基板である。[Means for solving the problem] That is, the gist of the means for achieving the above object is, firstly, a ceramic multilayer having a conductor containing Ag or an Ag alloy on the surface of multilayered ceramic sheets and between the layers. This is a ceramic multilayer wiring board in which ceramic and conductor are fired in a low oxygen concentration atmosphere.
第二に、未焼成セラミックシート上に、Ａｇ若しくはＡ
ｇ合金を含む導電ペーストを塗布し、これらセラミック
シートをＭ ＩＮして焼成するセラミック多層配線基板
の製造方法に於いて、焼成雰囲気を低酸素濃度雰囲気と
するセラミック多層配線基板の製造方法である。Second, Ag or A
In this method of manufacturing a ceramic multilayer wiring board, the firing atmosphere is a low oxygen concentration atmosphere in a method of manufacturing a ceramic multilayer wiring board in which a conductive paste containing g-alloy is applied, these ceramic sheets are MINed, and fired.
第三に、ベースとなる絶縁性シート上に、絶縁性セラミ
ックペーストとＡｇ若しくはＡｇ合金を含む導電ペース
トを交互に塗布し、得られた積層体を焼成するセラミッ
ク多層配線基板の製造方法に於いて、焼成雰囲気を低酸
素濃度雰囲気とするセラミック多層配線基板の製造方法
である。Thirdly, in a method for manufacturing a ceramic multilayer wiring board, in which an insulating ceramic paste and a conductive paste containing Ag or an Ag alloy are alternately applied on an insulating sheet serving as a base, and the resulting laminate is fired. , a method for manufacturing a ceramic multilayer wiring board in which the firing atmosphere is a low oxygen concentration atmosphere.
さらに、上記低酸素は、具体的には５００００ｐｐｍ以
下の酸素濃度雰囲気であるセラミック多層配線基板の製
造方法である。Furthermore, the above-mentioned low oxygen is specifically a method for manufacturing a ceramic multilayer wiring board in which the atmosphere has an oxygen concentration of 50,000 ppm or less.
［作 用コ
Ａｇ若しくはＡｇを含む＃電ペーストを、大気中より十
分酸素の濃度が低い雰囲気、より具体向には酸素濃度５
００００ｐｐｍ以下の雰囲気中で焼成すると、Ａｇの活
性が低下し、焼成時にセラミック中へのＡｇの拡散が極
度に抑えられる。[Action: Ag or #electrical paste containing Ag is placed in an atmosphere with a sufficiently lower oxygen concentration than in the atmosphere, more specifically in an oxygen concentration of 5.
When fired in an atmosphere of 0,000 ppm or less, the activity of Ag decreases, and the diffusion of Ag into the ceramic during firing is extremely suppressed.
このため１、大気中におけるＡｇの融点若しくはＡｇ合
金の固相線温度に近い温度で焼成しても、セラミック基
板の中へＡｇが拡散しにくい。For this reason, 1. Even when fired at a temperature close to the melting point of Ag in the atmosphere or the solidus temperature of an Ag alloy, Ag is difficult to diffuse into the ceramic substrate.
従って、焼成温度を９００℃以上にしても導体の抵抗値
が増大せず、また絶縁性セラミックの絶縁抵抗も低下し
ない。Therefore, even if the firing temperature is set to 900° C. or higher, the resistance value of the conductor does not increase, and the insulation resistance of the insulating ceramic does not decrease.
［実 施 例］
次に、本発明の具体的な実施例について詳細に説明する
。[Example] Next, specific examples of the present invention will be described in detail.
（実施例１）
Ａｌ２Ｏ２が４５重、Ｆｌ ％、Ｓ ｉ ０２７’ｌ’
３５ｍｉ’ｕ％、Ｂ ２０３が８重伍％、ＣａＯが５型
組％、Ｍｇｏが３．５重徂％、Ｃｒ２Ｏ３が３１ｆｆ１
％、Ｌｉ２Ｏが０．５１重１％からなるセラミック原料
粉末と、トルエン、エタノールが１対１の混合溶媒中に
、ポリビニルブチラールを溶解した佇Ｆ３ ／＜インダ
と、ジブチルフタレート（可Ｍ１）？ｆｌｌ ）と、オ
レイン酸（分散剤）とをボールミルで混合し、セラミッ
ク原料のスラリを用意した。(Example 1) Al2O2 is 45 times, Fl %, S i 027'l'
35mi'u%, B203 is 8%, CaO is 5%, Mgo is 3.5%, Cr2O3 is 31ff1
%, a ceramic raw material powder consisting of 0.51% by weight of Li2O, and polyvinyl butyral dissolved in a mixed solvent of 1:1 of toluene and ethanol. flll) and oleic acid (dispersant) were mixed in a ball mill to prepare a slurry of ceramic raw materials.
このスラリを真空脱泡機で脱泡した後、これからドクタ
ーブレード法によって、厚さ２５０μｍの長尺なグリー
ンシートを形成した。このグリーンシートを所定の大き
さ、例えば５０ｍｍＸ１２０ｍｍに切断し、このシート
上に直径２００μｍのＬ！ｒ通孔を１５２数形成してバ
アイアホールを形成した。After degassing this slurry using a vacuum degassing machine, a long green sheet with a thickness of 250 μm was formed from it by a doctor blade method. This green sheet is cut into a predetermined size, for example, 50 mm x 120 mm, and an L with a diameter of 200 μm is placed on the sheet. A via hole was formed by forming 152 r through holes.
またこれとは別に、エチルセルローズをテレピネオール
溶剤で溶量１したバインダ中に、Ａｇ粉末（比表面積１
．５３♂／ｇ）を加えて混練し、Ａｇペーストを作った
。Separately, Ag powder (specific surface area 1
．． 53♂/g) was added and kneaded to make an Ag paste.
前記バアイアホールを形成したグリーンシート上に、前
記Ａｇペーストをスクリーン印刷し、これと同時にバア
イアホールの内部にもＡｇペーストを充填した。このよ
うなシートを複数枚重ねて、９０°Ｃに保温したまま、
２００ｋｇ／ｃｍ２の圧力で圧着した。The Ag paste was screen printed on the green sheet on which the Bahia holes were formed, and at the same time, the Ag paste was also filled inside the Bahia holes. Stack multiple sheets like this and keep them warm at 90°C.
Pressure bonding was carried out at a pressure of 200 kg/cm2.
こうして作られた未焼成のセラミックＪ、Ｌ４１２を、
まず大気中で、３°Ｃ／ｍｉｎの温度勾配で室温から６
００°Ｃまで昇ｌ晶させ、続いて６００ ’Ｃの温度を
３０分間保持し、その後−１０″Ｃ／ｍｉｎの温度勾配
で室温まで冷却し、脱バインタ処理を行った。The unfired ceramic J, L412 made in this way,
First, in the atmosphere, with a temperature gradient of 3°C/min from room temperature to 6°C.
The crystals were raised to 00°C, then maintained at a temperature of 600°C for 30 minutes, and then cooled to room temperature with a temperature gradient of -10°C/min to perform debinding treatment.
次ぎに炉内に窒素ガスを導入し、これで炉内のガスを１
ａ換した後、２０°Ｃ／ｍｉｎの温度勾配で室温から９
２０℃まで昇温させ、続いて９２０°Ｃの温度を１０分
間保持した後、−２０°Ｃ／ｍｉｎの温度勾配で室温ま
で冷却した。この時の炉内の酸素濃度をジルコニア式酸
素濃度計によって測定した結果ｔｏｐｐｍであった。Next, introduce nitrogen gas into the furnace, which reduces the gas in the furnace to 1
After converting to a temperature gradient of 20°C/min from room temperature to 9.
The temperature was raised to 20°C, and then the temperature was maintained at 920°C for 10 minutes, and then cooled to room temperature with a temperature gradient of -20°C/min. At this time, the oxygen concentration in the furnace was measured using a zirconia oxygen concentration meter and was found to be top per million.
以上の方法で作られたセラミック多層配線基板の配線抵
抗を測定し、面積抵抗率を求めた結果は１．５ｍΩ／口
であった。また、線間の絶縁抵抗は全てｌＸｌ０Ｉ”Ω
以上であった。The wiring resistance of the ceramic multilayer wiring board made by the above method was measured, and the sheet resistivity was found to be 1.5 mΩ/hole. Also, the insulation resistance between the lines is lXl0I”Ω
That was it.
（実施例２）
上記実施例！にｔ１金いて、焼成時の炉内雰囲気の窒素
ガスと空気ガスとが５００： １の割合で混合された
混合ガスに代えた事以外は、同実施例１と同様の条件で
セラミック多層配線基板を装造した。この時の炉内の酸
素濃度は４２０ｐｐｍであった。(Example 2) The above example! A ceramic multilayer wiring board was fabricated under the same conditions as in Example 1, except that the atmosphere in the furnace at the time of firing was replaced with a mixed gas in which nitrogen gas and air gas were mixed at a ratio of 500:1. was equipped. The oxygen concentration in the furnace at this time was 420 ppm.
これによってＸ！ＡＤｉされたセラミック多層配線基板
の配線の面積抵抗率を求めた結果は１． ６ｍΩ／口で
あった。また、線間の絶縁抵抗は全て１ｘｔｏ＋８Ω以
上であった。With this, X! The results of determining the sheet resistivity of the wiring of the ADi ceramic multilayer wiring board are 1. It was 6 mΩ/mouth. Moreover, the insulation resistance between the lines was all 1×to+8Ω or more.
（実施例３）
上記実施例１において、焼成時の炉内゛雰囲気を、窒素
ガスと空気ガスとが２０： １の割合で混合された混合
ガスに代えた事以外は、同実施例１と同様の条件でセラ
ミック多層配線ノ１（板を製造した。この時の炉内の酸
素濃度は１０，０００ｐｐｍであった。(Example 3) Same as Example 1 except that the atmosphere in the furnace during firing was changed to a mixed gas of nitrogen gas and air gas at a ratio of 20:1. Ceramic multilayer wiring board No. 1 was manufactured under similar conditions. The oxygen concentration in the furnace at this time was 10,000 ppm.
これによって製造されたセラミック多層配線基板の配線
の面積抵抗率を求めた結果は２．０ｍΩ／口であった。The area resistivity of the wiring of the ceramic multilayer wiring board thus manufactured was determined to be 2.0 mΩ/hole.
また、線間の絶８抵抗は全てｌＸｌ０Ｉ”Ω以上であっ
た。Moreover, the absolute resistance between the lines was all 1X10I''Ω or more.
（実施例４）
上記実施例１と同様の方法で、焼成時の炉内雰囲気を窒
素ガスと空気とを３．２： Ｉの；Ｑ１１合で混合さ
れた混合ガスに代え、それ以外は同実施例１と同様にし
てセラミック多層配線１．ｒｒ板を製作した。この時の
焼成時の炉内酸素濃度は５００００ｐｐ−であった。(Example 4) In the same manner as in Example 1 above, the atmosphere in the furnace during firing was changed to a mixed gas of 3.2:I;Q11 for nitrogen gas and air, and other conditions were the same. Ceramic multilayer wiring 1 in the same manner as in Example 1. I made an rr board. The oxygen concentration in the furnace during firing at this time was 50,000 pp-.
これによって製造されたセラミック多層配線基板の配線
の面積抵抗率を求めた結果は３．０ｍ０７口であった。The area resistivity of the wiring of the ceramic multilayer wiring board thus manufactured was determined to be 3.0m07.
また、線間の絶縁抵抗は全て！×ｌＯΩ１以上であった
。Also, the insulation resistance between the lines is all! ×lOΩ1 or more.
（比較例１）
上記実施例Ｉにおいて、焼成時の炉内？ｆ囲気を大気中
としたＸＩＩ以外は、上記実施例１と同様の条件でセラ
ミック多ｊｒ１配線基板を製造した。(Comparative Example 1) In the above Example I, inside the furnace during firing? A ceramic multi-layer jr1 wiring board was manufactured under the same conditions as in Example 1 above except for XII in which the atmosphere was set to the atmosphere.
この時の炉内の酸素濃度は２１％であった。The oxygen concentration in the furnace at this time was 21%.
これによって製造されたセラミック多層配線基板の配線
の面積抵抗率を求めた結果は４．２ｍΩ／口であった。The area resistivity of the wiring of the ceramic multilayer wiring board manufactured in this way was determined to be 4.2 mΩ/hole.
また、線間の絶縁抵抗については、一部がｌＸ１０９０
以下であった。Also, regarding the insulation resistance between the lines, some parts are lX1090
It was below.
（実施例５）
上記実施例１に於いて、セラミック基板を形成するセラ
ミック原料粉末のｘｌ【成を、Ａｌ２Ｏ３が４８重量％
、Ｓ ｉ ０２ カ３４ ｍｆ？ｔ％、Ｂ ２０３が７
重量％、ＣａＯが４重Ｍ％、Ｍ ｇ Ｏｈ’ ３゜５重
Ｍ％、Ｃｒ２Ｃｈが爪凱％、Ｌｉ＞Ｏが０゜５重量％に
代えた事と、焼成温度を９５０°Ｃとした小以外は、同
実施例１と同様にしてセラミック多層配線基板を製作し
た。(Example 5) In the above Example 1, the xl composition of the ceramic raw material powder forming the ceramic substrate was 48% by weight of Al2O3.
, S i 02 Ka34 mf? t%, B 203 is 7
Weight%, CaO was changed to 4% by weight, Mg Oh' 3゜5% by weight, Cr2Ch was changed to Tsumekai%, Li>O was changed to 0゜5% by weight, and the firing temperature was set to 950°C. A ceramic multilayer wiring board was manufactured in the same manner as in Example 1 except for the small size.
これによって製造されたセラミック多層配線基板の配線
の面積抵抗率を求めた結果は１，８ｍΩ／口であった。The area resistivity of the wiring of the ceramic multilayer wiring board thus manufactured was determined to be 1.8 mΩ/hole.
また、線間の絶縁抵抗は、全てｌＸｌ０Ｉ＠Ω以−ヒで
あった。Moreover, the insulation resistance between the lines was all less than lXl0I@Ω.
（比較例２）
上記実施例５に於いて、焼成時の炉内雰囲気を大気中と
した事以外は、同実施例５と同Ｌｌの条件でセラミック
多層配線基板を製作した。この結果、セラミック基板の
層間に形成された内部配線は全て断線していた。(Comparative Example 2) A ceramic multilayer wiring board was manufactured under the same conditions as in Example 5, except that the atmosphere in the furnace during firing was set to air. As a result, all of the internal wiring formed between the layers of the ceramic substrate were disconnected.
（実施例６）
上記実施例Ｉに於いて、セラミック基板を形成するセラ
ミック原料粉末の組成を、Ａｌ２Ｏ３が５２重ｎ１％、
Ｓ ＋ ０２が３２ｆｆｌ毒％、Ｂ２Ｏ３が６型組％、
ＣａＯが３重狙％、ＭｇＯが３゜５重量％、Ｃｒ２Ｏ５
が３重狙％、Ｌｉ２Ｏが０５重量％に代エタｌＧ ＋！
−１Ａ ｇ ７’ｌ’ ９２ ｎ’ｉ ｊ７１ ％、Ｐ
ｄが８重狙％からなる導電粒子を主体する導電ペースト
を用いた串と、焼成温度を９８０℃とした事以外は、同
実施例１と同様にしてセラミック多層配線ノ、Ｕ ４ｆ
２を製作した。(Example 6) In the above Example I, the composition of the ceramic raw material powder forming the ceramic substrate was 52% by weight of Al2O3,
S + 02 is 32ffl poison%, B2O3 is type 6%,
CaO is triple target%, MgO is 3゜5% by weight, Cr2O5
is a triple target%, and Li2O is 05% by weight!
-1A g 7'l' 92 n'i j71 %, P
Ceramic multilayer wiring U 4f was prepared in the same manner as in Example 1, except that the skewer was made of a conductive paste mainly consisting of conductive particles with d being 8% and the firing temperature was 980°C.
I made 2.
これによって製造されたセラミック多層配線基板の配線
の面積抵抗率を求めたれ１１′果は５．１ｍΩ／口であ
った。また、線間の絶縁抵抗は、全てｌＸｌ０Ｉ”Ω以
上であった。The area resistivity of the wiring of the ceramic multilayer wiring board thus manufactured was determined to be 5.1 mΩ/hole. In addition, the insulation resistance between the lines was all 1X10I''Ω or more.
（比較例３）
上記実施例６に於いて、焼成時の炉内雰囲気を大気中と
した事以外は、同実施例６七同様の条件でセラミック多
層配線基板を製作した。この結果、セラミック基板のｊ
※間に形成された内部配線は全て断線していた。(Comparative Example 3) A ceramic multilayer wiring board was manufactured under the same conditions as in Example 6, except that the atmosphere in the furnace during firing was set to air. As a result, j of the ceramic substrate
*All internal wiring formed in between was disconnected.
（実施例７）
上記実施例１に於いて、セラミツクツ、（板を形成する
セラミック原料粉末のｍ成を、Ａｌ２Ｏ３が４０重型組
、Ｓ ｉ ０２が３６重重打％、Ｂ ２０３が１ｌｆｆ
ｌｆｆ）％、ＣａＯが６ ！Ｉｆ＝ｔ％、ＭｇＯが３゜
５重量％、Ｃｒ２Ｏ３が３ Ｅｌｉ ｆｆ１％、Ｌｉ２
Ｏが０゜５重Ｍ％に代えた事と、焼成温度を８９０°Ｃ
とした事以外は、上記実施例１と同様にしてセラミック
多層配線基板を製作した。(Example 7) In the above Example 1, the composition of the ceramic raw material powder forming the plate was as follows: Al2O3 was 40% heavy, Si 02 was 36% heavy, and B 203 was 1lff.
lff)%, CaO is 6! If=t%, MgO is 3°5% by weight, Cr2O3 is 3 Eli ff1%, Li2
O was changed to 0°5% by weight and the firing temperature was changed to 890°C.
A ceramic multilayer wiring board was manufactured in the same manner as in Example 1 above, except for the following.
これによって製造されたセラミック多層配線基板の配線
の面ｒｉＩｔ抵抗率を求めた結果は１．６ｍΩ／口であ
った。また、線間の絶縁抵抗は、全てｌＸ１０１９Ω以
上であった。The planar riIt resistivity of the wiring of the ceramic multilayer wiring board thus manufactured was determined to be 1.6 mΩ/hole. Moreover, the insulation resistance between the lines was all 1×10 19 Ω or more.
［発明の効果］
以上説明した通り、本発明によれば、Ａｇ若しくはＡｇ
合金を導体としたセラミック多層配線基板を、従来より
高い温度で焼成する事が可能になる。これによって、焼
成温度を低くするために、セラミック基板の中のガラス
成分を増加させて、その抗折強度が低下するという）弊
害がない。しかも、導体のセラミック基板への拡散も抑
えられるため、配線基板の絶縁性を高く、導体の抵抗値
を低く維持する事ができ、高信頼性ををするセラミック
配線基板を提供１１８来ると言う効果が達成される。[Effect of the invention] As explained above, according to the present invention, Ag or Ag
Ceramic multilayer wiring boards using alloys as conductors can be fired at higher temperatures than before. As a result, there is no problem (in order to lower the firing temperature, the glass component in the ceramic substrate is increased and its bending strength is lowered). Moreover, since the diffusion of the conductor into the ceramic substrate is suppressed, the insulation of the wiring board can be kept high and the resistance value of the conductor can be maintained low, providing a ceramic wiring board with high reliability. is achieved.
４、図面のｆｌＴｉ （１１な説明
第１図は、セラミック多層配線基板の６１４造を示す要
部断面図である。4. FlTi (11. Explanation of Drawings) FIG. 1 is a cross-sectional view of essential parts showing a 614 structure of a ceramic multilayer wiring board.
１・・・セラミック基板 ２・・・内部導体 ３・・・
ホール４体 ４・・・外部導体
特許出願人 太陽１橘電株式会社
代 理 人 弁理士北條和由
今
第１図
］
Φ1... Ceramic substrate 2... Internal conductor 3...
4 holes 4...Outer conductor patent applicant Taiyo 1 Tachibana Electric Co., Ltd. Agent Patent attorney Kazuyuki Hojo Figure 1] Φ
Claims (4)
間にＡｇ若しくはＡｇ合金を含む内部導体を有するセラ
ミック多層配線基板に於いて、セラミックと導体が低酸
素濃度雰囲気中で焼成された事を特徴とするセラミック
多層配線基板。(1) A ceramic multilayer wiring board having an internal conductor containing Ag or Ag alloy between the surfaces and layers of multilayered ceramic sheets, characterized in that the ceramic and the conductor are fired in a low oxygen concentration atmosphere. Ceramic multilayer wiring board.
合金を含む導電ペーストを塗布し、これらセラミックシ
ートを積層して焼成するセラミック多層配線基板の製造
方法に於いて、焼成雰囲気を低酸素濃度雰囲気とする事
を特徴とするセラミック多層配線基板の製造方法。(2) Ag or Ag on the unfired ceramic sheet
A method for manufacturing a ceramic multilayer wiring board, in which a conductive paste containing an alloy is applied, these ceramic sheets are laminated, and fired, the firing atmosphere being a low oxygen concentration atmosphere. .
クペーストとＡｇ若しくはＡｇ合金を含む導電ペースト
を交互に塗布し、得られた積層体を焼成するセラミック
多層配線基板の製造方法に於いて、焼成雰囲気を低酸素
濃度雰囲気とする事を特徴とするセラミック多層配線基
板の製造方法。(3) In a method for manufacturing a ceramic multilayer wiring board, in which an insulating ceramic paste and a conductive paste containing Ag or an Ag alloy are alternately applied on an insulating sheet serving as a base, and the resulting laminate is fired. A method for manufacturing a ceramic multilayer wiring board, characterized in that the firing atmosphere is a low oxygen concentration atmosphere.
に記載の低酸素濃度雰囲気が、５００００ｐｐｍ以下の
酸素濃度雰囲気である事を特徴とするセラミック多層配
線基板の製造方法。(4) A method for manufacturing a ceramic multilayer wiring board, characterized in that the low oxygen concentration atmosphere according to any one of claims 2 or 3 is an atmosphere with an oxygen concentration of 50,000 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27581288A JPH02122598A (en) | 1988-10-31 | 1988-10-31 | Ceramic multilayer wiring board and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27581288A JPH02122598A (en) | 1988-10-31 | 1988-10-31 | Ceramic multilayer wiring board and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122598A true JPH02122598A (en) | 1990-05-10 |
Family
ID=17560764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27581288A Pending JPH02122598A (en) | 1988-10-31 | 1988-10-31 | Ceramic multilayer wiring board and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122598A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| JP2005167108A (en) * | 2003-12-05 | 2005-06-23 | Murata Mfg Co Ltd | Method of manufacturing laminated electronic component |
| US7431785B2 (en) | 2002-07-25 | 2008-10-07 | Murata Manufacturing Co., Ltd. | Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part |
| JP2016213410A (en) * | 2015-05-13 | 2016-12-15 | 日立金属株式会社 | Circuit board and method for manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61108192A (en) * | 1984-10-31 | 1986-05-26 | 日本電気株式会社 | Low temperature sintered multilayer ceramic substrate |
| JPS62265796A (en) * | 1986-05-14 | 1987-11-18 | 株式会社住友金属セラミックス | Ceramic multilayer interconnection board and manufacture of the same |
-
1988
- 1988-10-31 JP JP27581288A patent/JPH02122598A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61108192A (en) * | 1984-10-31 | 1986-05-26 | 日本電気株式会社 | Low temperature sintered multilayer ceramic substrate |
| JPS62265796A (en) * | 1986-05-14 | 1987-11-18 | 株式会社住友金属セラミックス | Ceramic multilayer interconnection board and manufacture of the same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5683790A (en) * | 1992-12-28 | 1997-11-04 | Tdk Corporation | Multilayer ceramic parts |
| US7431785B2 (en) | 2002-07-25 | 2008-10-07 | Murata Manufacturing Co., Ltd. | Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part |
| JP2005167108A (en) * | 2003-12-05 | 2005-06-23 | Murata Mfg Co Ltd | Method of manufacturing laminated electronic component |
| JP4560765B2 (en) * | 2003-12-05 | 2010-10-13 | 株式会社村田製作所 | Manufacturing method of multilayer electronic component |
| JP2016213410A (en) * | 2015-05-13 | 2016-12-15 | 日立金属株式会社 | Circuit board and method for manufacturing the same |
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