JPH0193089A - Formation of ferroelectric thin film - Google Patents
Formation of ferroelectric thin filmInfo
- Publication number
- JPH0193089A JPH0193089A JP62250226A JP25022687A JPH0193089A JP H0193089 A JPH0193089 A JP H0193089A JP 62250226 A JP62250226 A JP 62250226A JP 25022687 A JP25022687 A JP 25022687A JP H0193089 A JPH0193089 A JP H0193089A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric thin
- thickness
- electrode
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 79
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 26
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 15
- 238000005401 electroluminescence Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
エレクトロルミネッセンス（ＨＬ）を利用した薄膜構造
の表示デバイス等に用いられるペロブスカイト型結晶構
造のチタン酸鉛からなる強誘電薄膜を、比較的低温で形
成する方法の改良に関し、スパッタリングによるアモル
ファス状の成膜と、成膜後の熱処理工程により、比較的
低温でペロブスカイト型結晶構造のチタン酸鉛からなる
絶縁特性の良い強誘電薄膜を容易に形成し得る新規な方
法を提供することを目的とし、
ガラス基板上にスパッタリング法によりアモルファス状
のチタン酸鉛からなる薄膜を形成した後、該薄膜を熱処
理して、ペロブスカイト型結晶構造のチタン酸鉛からな
る強誘電薄膜を形成する際に、上記アモルファス状のチ
タン酸鉛からなる薄膜を３００〜１５００人の膜厚に成
膜し、引き続き熱処理を行う工程を少なくとも二回以上
繰り返して積層形成する。[Detailed Description of the Invention] [Summary] A method for forming a ferroelectric thin film made of lead titanate with a perovskite crystal structure used in display devices with a thin film structure using electroluminescence (HL) at a relatively low temperature. Regarding the improvement of ferroelectric properties, we have developed a new ferroelectric thin film that can easily form a ferroelectric thin film with good insulating properties made of lead titanate with a perovskite crystal structure at a relatively low temperature by forming an amorphous film by sputtering and a heat treatment process after film formation. The purpose of the present invention is to form a thin film made of amorphous lead titanate on a glass substrate by a sputtering method, and then heat-treat the thin film to form a ferroelectric thin film made of lead titanate having a perovskite crystal structure. When forming the above-mentioned amorphous lead titanate, a thin film made of amorphous lead titanate is formed to a thickness of 300 to 1,500 layers, and then heat treatment is repeated at least twice to form a layer.
本発明はエレクトロルミネッセンス（ＥＬ）を利用した
薄膜構造の表示デバイス等に用いられるペロブスカイト
型結晶構造のチタン酸鉛系の強誘電薄膜を、比較的低温
で形成する方法の改良に関するものである。The present invention relates to an improvement in a method for forming a lead titanate-based ferroelectric thin film with a perovskite crystal structure, which is used in display devices with a thin film structure using electroluminescence (EL), at a relatively low temperature.
近来、エレクトロルミネッセンス（ＥＬ）を利用した薄
膜構造の表示デバイスでは、その駆動電圧を低減するた
めの透明な高誘電率絶縁膜（強誘電薄膜）や光通信用光
導波路を構成するための高誘電率薄膜を比較的低温で、
かつ膜欠陥が生じないように容易に形成し得る方法が必
要とされている。Recently, display devices with a thin film structure using electroluminescence (EL) have been using transparent high dielectric constant insulating films (ferroelectric thin films) to reduce the driving voltage and high dielectric materials to construct optical waveguides for optical communication. rate thin film at relatively low temperature,
There is also a need for a method that can be easily formed without causing film defects.
一般に薄膜ＥＬパネル等に用いられるチタン酸鉛からな
る強誘電薄膜をガラス基板上にスパッタリング法等によ
り形成する場合、成膜時の基板温度を少なくとも７２０
″Ｃ以上の高温にしないと、優れた高誘電率を示すペロ
ブスカイト型結晶構造のチタン酸鉛からなる強誘電薄膜
を得ることができず、また成膜時の基板温度を高温にす
るとガラス基板が軟化変形し易く、成膜が難しくなると
いった問題があった。When forming a ferroelectric thin film made of lead titanate, which is generally used in thin-film EL panels, etc., on a glass substrate by sputtering, etc., the substrate temperature during film formation is at least 720°C.
A ferroelectric thin film made of lead titanate with a perovskite crystal structure, which exhibits an excellent high dielectric constant, cannot be obtained unless the temperature is raised to a temperature higher than ``C. There were problems in that it was easily softened and deformed, making it difficult to form a film.
そこでこのような問題を解決する方法として、例えば加
熱しない室温、または室温以下の状態のガラス基板上に
スパッタリング法によりアモルファス状のチタン酸鉛（
ＰｂＴｉＯｉ）からなる薄膜を形成した後、その薄膜を
５００°Ｃ程度の温度で熱処理することにより、ガラス
基板を軟化変形させない比較的低温で容易に強誘電性を
示すペロブスカイト型結晶構造のＰｂＴｉＯｘからなる
強誘電薄膜を形成する方法が本発明者等により既に提案
されている。Therefore, as a method to solve this problem, for example, amorphous lead titanate (
After forming a thin film made of PbTiOi), the thin film is heat-treated at a temperature of about 500°C to create a film made of PbTiOx with a perovskite crystal structure that easily exhibits ferroelectricity at relatively low temperatures that do not soften or deform the glass substrate. A method for forming a ferroelectric thin film has already been proposed by the present inventors.
ところで上記したような先願の強誘電薄膜の形成方法で
は、スパッタリングにより成膜されたアモルファス状の
薄膜を熱処理してペロブスカイト型結晶構造の強誘電薄
膜を形成した際に、該薄膜に微小な剥離欠陥が生や、絶
縁特性が悪くなるといった問題があった。By the way, in the method for forming a ferroelectric thin film described in the previous application, when an amorphous thin film formed by sputtering is heat-treated to form a ferroelectric thin film with a perovskite crystal structure, minute peeling occurs in the thin film. There were problems such as defects and poor insulation properties.
この薄膜の剥離欠陥の発生は、前記熱処理時に該薄膜が
膨張し、膜中の応力発生に伴う歪の増加に起因するもの
と推考され、現象としては１μｍ程度の領域で膜にふく
れが生じ、過度のものでは亀裂、さらには剥落する。そ
してこのような現象は膜厚が厚くなるにつれて顕著とな
る傾向がある。The occurrence of peeling defects in the thin film is thought to be due to the expansion of the thin film during the heat treatment and an increase in strain due to the generation of stress in the film.As a phenomenon, the film bulges in an area of about 1 μm. Excessive use will cause cracks and even flaking. This phenomenon tends to become more pronounced as the film thickness increases.
従って、ＥＬパネルの製造等に適用する少な（とも３０
００人程度以上の膜厚を必要とする、例えば表示用透明
電極の絶縁層となる強誘電薄膜の形成が困難になるとい
った欠点があった。Therefore, it is difficult to apply for manufacturing of EL panels etc.
There was a drawback that it would be difficult to form a ferromatic film, for example, an insulating layer of a transparent electrode for displaying a transparent electrode, which requires more than 00 or more film thickness.
本発明は上記した目的を達成するため、加熱しない状態
のガラス基板上にスパッタリング法によりアモルファス
状のチタン酸鉛からなる薄膜を形成した後、該薄膜を５
００″Ｃ程度の温度で熱処理して、ペロブスカイト型結
晶構造のチタン酸鉛からなる強誘電薄膜を形成する際に
、上記アモルファス状のチタン酸鉛からなる薄膜を３０
０〜１５００人の薄い膜厚で成膜し、引き続き熱処理を
行う工程を少なくとも二回以上繰り返して積層形成する
ことにより、剥離欠陥の発生のない所要の厚い膜厚を有
するペロブスカイト型結晶構造のチタン酸鉛からなる強
誘電薄膜を得るようにする。In order to achieve the above-mentioned object, the present invention forms a thin film made of amorphous lead titanate by sputtering on a glass substrate in an unheated state, and then the thin film is
When forming a ferroelectric thin film made of lead titanate with a perovskite crystal structure by heat treatment at a temperature of about 00"C, the thin film made of amorphous lead titanate is
By repeating the process of forming a film with a thin film thickness of 0 to 1,500 yen and then heat treatment at least twice to form a layer, titanium with a perovskite crystal structure has a required thick film without peeling defects. A ferroelectric thin film made of acid lead is obtained.
本発明の強誘電薄膜の形成方法では、アモルファス状の
チタン酸鉛からなる薄膜の熱処理時に、熱膨張により発
生する剥離の原因となる膜中の歪を小さくするためには
、膜厚を薄くする必要がある。In the method for forming a ferroelectric thin film of the present invention, in order to reduce the strain in the film that causes peeling caused by thermal expansion during heat treatment of the thin film made of amorphous lead titanate, the film thickness is reduced. There is a need.
即ち、このような考えに基づきアモルファス状のチタン
酸鉛からなる薄膜の膜厚と熱処理後の剥離発生との関係
を実験し、それら薄膜の剥離状態、即ち、膨れ、剥がれ
による凹凸の高さを表面粗さの評価法から求めることに
より調べた結果、第１図に示すように１５００Å以下の
膜厚の前記薄膜を熱処理した場合には剥離の発生がなく
、それ以上の膜厚の前記薄膜の熱処理により剥離が顕著
に発生することが判明した。That is, based on this idea, we conducted an experiment on the relationship between the thickness of thin films made of amorphous lead titanate and the occurrence of peeling after heat treatment, and investigated the peeling state of these thin films, that is, the height of unevenness due to blistering and peeling. As a result of investigation using the surface roughness evaluation method, as shown in Figure 1, when the thin film with a thickness of 1500 Å or less was heat-treated, no peeling occurred, and when the thin film with a thickness of 1500 Å or less was heat-treated, no peeling occurred. It has been found that heat treatment causes significant peeling.
従って、１５００Å以上の膜厚を有するペロブスカイト
型結晶構造のチタン酸鉛からなる強誘電薄膜を形成する
際には、アモルファス状のチタン酸鉛からなる薄膜を３
００〜１５００人の薄い膜厚に成膜し、引き続き熱処理
を行う工程を少なくとも二回以上繰り返して積層形成す
ることにより、剥離欠陥のない所要の厚い膜厚を有する
ペロブスカイト型結晶構造のチタン酸鉛からなる強誘電
薄膜を容易に得ることができる。Therefore, when forming a ferroelectric thin film made of lead titanate with a perovskite crystal structure having a film thickness of 1500 Å or more, a thin film made of amorphous lead titanate is
Lead titanate with a perovskite-type crystal structure that has a required thick film thickness without peeling defects is produced by repeating the process of forming a film to a thin film thickness of 00 to 1,500 people and then performing heat treatment at least twice to form a layer. A ferroelectric thin film consisting of can be easily obtained.
以下図面を用いて本発明を薄膜ＥＬパネルの絶縁層形成
に適用した例について詳細に説明する。Hereinafter, an example in which the present invention is applied to forming an insulating layer of a thin film EL panel will be described in detail with reference to the drawings.
第２図は本発明の一実施例に適用するスパッタリング装
置の一構成例を概念的に示す要部断面図である。FIG. 2 is a sectional view of a main part conceptually showing an example of a configuration of a sputtering apparatus applied to an embodiment of the present invention.
本実施例では図示のようにまず気密ペルジャー１１内の
チタン酸鉛（ＰｂＴｉＯｚ）焼結体からなるターゲ“ッ
ト１３を備えたターゲット電極１４と対向する水冷式基
板ホルダー１５に、例えばＴ Ｔ Ｏ（Ｉｎｄｉｕｍ
Ｔｉｎ０ｘｉｄｅ）等からなる透明電極２が形成された
ＥＬ表示パネル用のガラス基板１を配設する。In this embodiment, as shown in the figure, first, a water-cooled substrate holder 15, for example, is placed on a water-cooled substrate holder 15 facing a target electrode 14 equipped with a target 13 made of a lead titanate (PbTiOz) sintered body in an airtight Pelger 11. (Indium
A glass substrate 1 for an EL display panel on which a transparent electrode 2 made of (TinOxide) or the like is formed is provided.
次にこの気密ペルジャー１１内を排気装置１２によって
１０− ’Ｔｏｒｒ程度の真空度にした後、酸素（０□
）ガスを２０容量％添加したアルゴン（Ａｒ）ガスから
なるスパッタガスをＩ Ｘ １０− ”Ｔｏｒｒの気圧
雰囲気となるように導入する。Next, the inside of this airtight Pel jar 11 is brought to a vacuum level of about 10-' Torr by the exhaust device 12, and then oxygen (0□
) A sputtering gas consisting of argon (Ar) gas added with 20% by volume is introduced to create a pressure atmosphere of I x 10-'' Torr.
そして前記ターゲット電極１４と基板ホルダー１５との
間に５００Ｗの高周波電力（４インチ径のターゲットを
対象とした場合）を印加して、加熱しない室温乃至室温
以下の状態の前記ガラス基板１上に、スパッタリングに
より第３図（ａ）に示すようにアモルファス状の第−Ｐ
ｂＴｉ０Ｊ膜３ａを１０００人の膜厚に被着形成し、そ
の後、該薄膜３ａを１０− ｈＴｏｒｒ程度の真空中で
４００〜７００°Ｃに加熱、本実施例ではガラス基板１
の軟化変形を防止するために５００°Ｃに加熱して１時
間程度熱処理を行い、第３図［有］）に示すようにペロ
ブスカイト型結晶構造のＰｂＴｉ０ｚからなる第一強誘
電薄膜３１を形成する。Then, a high frequency power of 500 W (when targeting a 4-inch diameter target) is applied between the target electrode 14 and the substrate holder 15, and the glass substrate 1 is heated at room temperature or below room temperature without being heated. By sputtering, an amorphous P-P is formed as shown in Fig. 3(a).
A bTi0J film 3a is deposited to a thickness of 1000 mm, and then the thin film 3a is heated to 400 to 700°C in a vacuum of about 10-hTorr.
In order to prevent softening and deformation, heat treatment is performed at 500° C. for about 1 hour to form a first ferroelectric thin film 31 made of PbTi0z having a perovskite crystal structure as shown in FIG. .
次に引き続き該第−強誘電薄膜３１上に前記したと同様
なスパッタリング条件によって、第３図（Ｃ）に示すよ
うにアモルファス状の第二ＰｂＴｉ０ＪＪ膜３ｂを１０
００人の膜厚に被着形成した後、該第二薄膜３ｂを前記
したと同様な熱処理を行って第３図（ｄ）に示すように
ペロブスカイト型結晶構造のＰｂＴｉ０ｚからなる第二
強誘電薄膜３２を形成する。Next, under the same sputtering conditions as described above, a second amorphous PbTi0JJ film 3b is deposited on the first ferroelectric thin film 31 at a rate of 10%, as shown in FIG. 3(C).
After forming the film to a thickness of 0.00 mm, the second thin film 3b is subjected to the same heat treatment as described above to form a second ferroelectric thin film made of PbTi0z having a perovskite crystal structure, as shown in FIG. 3(d). form 32.
更に引き続き該第二強誘電薄膜３２上に上記したと同様
なスパッタリング法によるアモルファス状の第三ＰｂＴ
ｉＯ３薄膜（図示せず）の成膜と熱処理工程とを繰り返
して、第３図（ｅ）に示すように１０００人の膜厚のペ
ロブスカイト型結晶構造のＰｂＴｉＯｓからなる第三強
誘電薄膜３３を形成する。Subsequently, amorphous third PbT is deposited on the second ferroelectric thin film 32 by the same sputtering method as described above.
By repeating the formation of an iO3 thin film (not shown) and the heat treatment process, a third ferroelectric thin film 33 made of PbTiOs having a perovskite crystal structure and having a thickness of 1000 nm is formed as shown in FIG. 3(e). do.
かくすれば、従来の形成方法のように熱処理による各強
誘電薄膜の剥離が生しることなく、表示用透明電極２の
絶縁層となる３層からなる３０００人の厚い膜厚を有す
る強誘電薄膜３０を容易に得ることが可能となる。In this way, peeling of each ferroelectric thin film due to heat treatment, unlike in conventional forming methods, does not occur, and a ferroelectric film having a thick film thickness of 3,000 layers consisting of three layers that becomes the insulating layer of the transparent electrode 2 for display can be formed. It becomes possible to easily obtain the thin film 30.
〔発明の効果〕
以上の説明から明らかなように本発明に係る強誘電薄膜
の形成方法によれば、アモルファス状のＰｂＴｉ０ｚ薄
膜を熱処理した際に、該薄膜の剥離が生じないため、絶
縁特性の良いペロブスカイト型結晶構造のＰｂＴｉ０．
からなる厚い膜厚の強誘電薄膜を容易に形成することが
可能となる優れた利点を有する。[Effects of the Invention] As is clear from the above description, according to the method for forming a ferroelectric thin film according to the present invention, when an amorphous PbTiOz thin film is heat-treated, peeling of the thin film does not occur, so that the insulation properties are improved. PbTi0. with good perovskite crystal structure.
It has an excellent advantage in that it is possible to easily form a thick ferroelectric thin film consisting of.
従って、表示用透明電極の絶縁層としてチタン酸鉛系の
強誘電薄膜を用いた低電圧駆動の薄膜ＥＬパネルなどの
製造に適用して顕著なる効果を奏する。Therefore, it can be applied to the manufacture of thin film EL panels driven at low voltage using a lead titanate-based ferroelectric thin film as an insulating layer of a transparent electrode for display, and a remarkable effect can be achieved.
第１図は本発明に係る強誘電薄膜の膜厚と剥離発生との
関係を示す図、
第２図は本発明に係る強誘電薄膜の形成方法に適用する
スパッタリング装置の一構成
例を示す図、
第３図（ａ）〜（ｅ）は本発明に係る強誘電薄膜の形成
方法の一実施例を工程順に説明するた
めの要部断面図である。
第２図及び第３図において、
■はガラス基板、２は透明電極、３ａは第一アモルファ
スＰｂＴｉ０．Ｉ薄膜、３ｂは第ニアモルファスＰｂＴ
ｉ０３Ｆ！膜、１１は気密ベルジャー、１２は排気装置
、１３はターゲット、１４はターゲット電極、１５は基
板ホルダー、３０は厚い強誘電薄膜、３１は第一強誘電
薄膜、３２は第二強誘電薄膜、３３は第三強誘電薄膜を
それぞれ示す。
→ 榎３（Ａ）
萩蹄側朝ｌ／ｌ侯厚Ｘ ｉＪ＆発１１１闇碌を零Ｔ図第
１図
ノド’ｉＦＬｇＦｆｃｑ形に方１ｉｒ＝ｒ＠１．ｒ、１
ｉＪＦ＞’ａｔ第２図FIG. 1 is a diagram showing the relationship between the film thickness and the occurrence of peeling of a ferroelectric thin film according to the present invention, and FIG. 2 is a diagram showing an example of the configuration of a sputtering apparatus applied to the method for forming a ferroelectric thin film according to the present invention. , FIGS. 3(a) to 3(e) are sectional views of essential parts for explaining one embodiment of the method for forming a ferroelectric thin film according to the present invention in the order of steps. In FIGS. 2 and 3, 2 is a glass substrate, 2 is a transparent electrode, and 3a is a first amorphous PbTi0. I thin film, 3b is near-morphous PbT
i03F! 11 is an airtight bell jar, 12 is an exhaust device, 13 is a target, 14 is a target electrode, 15 is a substrate holder, 30 is a thick ferroelectric thin film, 31 is a first ferroelectric thin film, 32 is a second ferroelectric thin film, 33 indicate the third ferroelectric thin film, respectively. → Enoki 3 (A) Hagitei side morning l/l Houatsu r, 1
iJF＞'atFigure 2
Claims (1)
ファス状のチタン酸鉛系薄膜を形成した後、該薄膜を熱
処理して、ペロブスカイト型結晶構造のチタン酸鉛から
なる強誘電薄膜（３０）を形成する際に、 上記アモルファス状のチタン酸鉛からなる薄膜を３００
〜１５００Åの膜厚に成膜し、引き続き熱処理を行う工
程を少なくとも二回以上繰り返して積層形成することを
特徴とする強誘電薄膜の形成方法。[Claims] After forming an amorphous lead titanate-based thin film on a glass substrate (1) by sputtering, the thin film is heat-treated to form a ferroelectric thin film ( 30), the thin film made of the amorphous lead titanate was
A method for forming a ferroelectric thin film, which comprises repeating the steps of forming a film to a thickness of ~1500 Å and subsequently subjecting it to heat treatment at least twice to form a ferroelectric thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250226A JP2605739B2 (en) | 1987-10-02 | 1987-10-02 | Method of forming ferroelectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62250226A JP2605739B2 (en) | 1987-10-02 | 1987-10-02 | Method of forming ferroelectric thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0193089A true JPH0193089A (en) | 1989-04-12 |
| JP2605739B2 JP2605739B2 (en) | 1997-04-30 |
Family
ID=17204715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62250226A Expired - Lifetime JP2605739B2 (en) | 1987-10-02 | 1987-10-02 | Method of forming ferroelectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2605739B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
-
1987
- 1987-10-02 JP JP62250226A patent/JP2605739B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2605739B2 (en) | 1997-04-30 |
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