JPH0151091B2 - - Google Patents

Info

Publication number: JPH0151091B2
Authority: JP; Japan
Prior art keywords: transistor; potential; circuit; load; drain
Prior art date: 1982-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP57178785A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5967724A (ja

Inventor

Koichi Murakami

Takeshi Ooguro

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nissan Motor Co Ltd

Original Assignee

Nissan Motor Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-10-12

Filing date

1982-10-12

Publication date

1989-11-01

1982-10-12 Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd

1982-10-12 Priority to JP57178785A priority Critical patent/JPS5967724A/ja

1983-10-10 Priority to EP83110101A priority patent/EP0107137B1/de

1983-10-10 Priority to DE8383110101T priority patent/DE3366617D1/de

1983-10-11 Priority to US06/540,666 priority patent/US4551779A/en

1984-04-17 Publication of JPS5967724A publication Critical patent/JPS5967724A/ja

1989-11-01 Publication of JPH0151091B2 publication Critical patent/JPH0151091B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 15
230000010354 integration Effects 0.000 claims description 5
239000003990 capacitor Substances 0.000 description 15
108091006146 Channels Proteins 0.000 description 10
238000010586 diagram Methods 0.000 description 8
239000000758 substrate Substances 0.000 description 7
230000007423 decrease Effects 0.000 description 6
229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
230000008859 change Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
229910004298 SiO 2 Inorganic materials 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000004904 shortening Methods 0.000 description 2
108010075750 P-Type Calcium Channels Proteins 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000008901 benefit Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000007599 discharging Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000004044 response Effects 0.000 description 1
230000004043 responsiveness Effects 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Landscapes

Protection Of Static Devices (AREA)
Electronic Switches (AREA)

JP57178785A 1982-10-12 1982-10-12 半導体スイツチ回路 Granted JPS5967724A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP57178785A JPS5967724A (ja)	1982-10-12	1982-10-12	半導体スイツチ回路
EP83110101A EP0107137B1 (de)	1982-10-12	1983-10-10	Halbleiterschalter mit Überstromschutz
DE8383110101T DE3366617D1 (en)	1982-10-12	1983-10-10	A semiconductor switching circuit with an overcurrent protection
US06/540,666 US4551779A (en)	1982-10-12	1983-10-11	Semiconductor switching circuit with an overcurrent protection

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP57178785A JPS5967724A (ja)	1982-10-12	1982-10-12	半導体スイツチ回路

Publications (2)

Publication Number	Publication Date
JPS5967724A JPS5967724A (ja)	1984-04-17
JPH0151091B2 true JPH0151091B2 (de)	1989-11-01

Family

ID=16054591

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57178785A Granted JPS5967724A (ja)	1982-10-12	1982-10-12	半導体スイツチ回路

Country Status (1)

Country	Link
JP (1)	JPS5967724A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2183853B (en) *	1985-12-02	1989-12-20	Trw Inc	Power supply switch circuit for wafer scale applications
JP4729877B2 (ja) *	2004-07-14	2011-07-20	ソニー株式会社	電流出力型駆動回路
US7242560B2 (en) *	2004-09-14	2007-07-10	Delphi Technologies, Inc	Discrete circuit for driving field effect transistors
TWI485947B (zh) *	2011-07-27	2015-05-21	Giga Byte Tech Co Ltd	電路保護裝置及保護方法

1982
- 1982-10-12 JP JP57178785A patent/JPS5967724A/ja active Granted

Also Published As

Publication number	Publication date
JPS5967724A (ja)	1984-04-17

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