JPH0131305B2 - - Google Patents
Info
- Publication number
- JPH0131305B2 JPH0131305B2 JP56125101A JP12510181A JPH0131305B2 JP H0131305 B2 JPH0131305 B2 JP H0131305B2 JP 56125101 A JP56125101 A JP 56125101A JP 12510181 A JP12510181 A JP 12510181A JP H0131305 B2 JPH0131305 B2 JP H0131305B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- impurity region
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 description 13
- 230000010354 integration Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56125101A JPS5827356A (ja) | 1981-08-10 | 1981-08-10 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56125101A JPS5827356A (ja) | 1981-08-10 | 1981-08-10 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5827356A JPS5827356A (ja) | 1983-02-18 |
JPH0131305B2 true JPH0131305B2 (sv) | 1989-06-26 |
Family
ID=14901873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56125101A Granted JPS5827356A (ja) | 1981-08-10 | 1981-08-10 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5827356A (sv) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62277745A (ja) * | 1986-05-27 | 1987-12-02 | Toshiba Corp | 半導体集積回路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55128861A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor integrated circuit device and method of fabricating the same |
JPS5660047A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Manufacture of semiconductor device |
-
1981
- 1981-08-10 JP JP56125101A patent/JPS5827356A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55128861A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor integrated circuit device and method of fabricating the same |
JPS5660047A (en) * | 1979-10-22 | 1981-05-23 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5827356A (ja) | 1983-02-18 |
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