JPH01280354A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH01280354A JPH01280354A JP63110987A JP11098788A JPH01280354A JP H01280354 A JPH01280354 A JP H01280354A JP 63110987 A JP63110987 A JP 63110987A JP 11098788 A JP11098788 A JP 11098788A JP H01280354 A JPH01280354 A JP H01280354A
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- semiconductor substrate
- groove
- readout
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は固体撮像素子に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a solid-state image sensor.
第３図は従来のインクライン転送方式の固体撮像素子の
断面図である。FIG. 3 is a cross-sectional view of a conventional incline transfer type solid-state imaging device.
Ｐ型半導体基板１上に配列されたホトダイオード部（Ｎ
−領域８）に対し、これに隣接して配列された転送電極
４−１．４−２は半導体基板上に図のように形成される
。したがってホトダイオード部は転送電極に対し、凹形
となり、この上部に形成される絶縁膜（酸化シリコン膜
）もホトダイオード部上では転送電極上に対し凹形とな
っていた。Photodiode sections (N
Transfer electrodes 4-1, 4-2 arranged adjacent to the region 8) are formed on the semiconductor substrate as shown in the figure. Therefore, the photodiode portion has a concave shape with respect to the transfer electrode, and the insulating film (silicon oxide film) formed on the photodiode portion also has a concave shape with respect to the transfer electrode.
上述した従来の固体撮像素子ではホトダイオード部上の
絶縁膜が凹形となっているので入射してきた光が絶縁膜
を通り抜ける間にホトダイオード部に隣接する他の領域
に散乱されてスミアが発生したり、感度ムラが生じると
いう欠点がある。In the above-mentioned conventional solid-state image sensor, the insulating film on the photodiode part is concave, so while the incident light passes through the insulating film, it is scattered to other areas adjacent to the photodiode part, causing smear. , there is a drawback that sensitivity unevenness occurs.
本発明の固体撮像素子は、半導体基板上に配列され、入
射した光により生成した信号電荷を蓄猜するホトダイオ
ード部と、このホトダイオード部に隣接して配列され前
記ホトダイオード部に蓄積された信号電荷を受取って転
送電極により転送して読み出す読出部と、この読出部の
転送電極が配線され前記ホトダイオード部を分離する画
素分離領域を有し、前記転送電極が前記半導体基板内に
掘られた溝部に設けられているというものである。The solid-state imaging device of the present invention includes a photodiode section arranged on a semiconductor substrate and storing signal charges generated by incident light, and a photodiode section arranged adjacent to the photodiode section storing signal charges accumulated in the photodiode section. It has a readout section that receives the data and transfers it to the readout section using a transfer electrode, and a pixel isolation region where the transfer electrode of the readout section is wired and separates the photodiode section, and the transfer electrode is provided in a groove section dug in the semiconductor substrate. It is said that it is being carried out.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ＞は本発明の一実施例の平面図第１図（ｂ）
及び第１図（ｃ）はそれぞれ第１図（ａ）のｘ−ｘ’線
及びＹ−Ｙ’線断面図である。Fig. 1 (a> is a plan view of an embodiment of the present invention Fig. 1 (b))
and FIG. 1(c) are sectional views taken along line XX' and Y-Y' in FIG. 1(a), respectively.
シリコンからなるＰ型半導体基板１上の読出部２と画素
分離領域３に（格子状に）溝を形成し、この溝内に読出
部と画素分離領域の転送電極４−１．４−２を完全に埋
め込んで形成する。例えば溝の幅は２μｍ、深さは３〜
４μｍ、転送電極の厚さは０．５μｍとする。さらに絶
縁膜５を全面に形成したときホトタイオード（８）上部
が転送電極上部に対し凸形になり入射してくる光の分散
を妨げる。又、ホトタイオードから電荷分読出すトラン
スファゲート１１が垂直方向に設けられているので、相
対的にホトダイオードの面積を広くとれ開口率が向上す
る。Grooves (in a lattice pattern) are formed in the readout section 2 and the pixel isolation region 3 on the P-type semiconductor substrate 1 made of silicon, and the transfer electrodes 4-1 and 4-2 of the readout section and the pixel isolation region are formed in the grooves. Fully embedded and formed. For example, the groove width is 2μm and the depth is 3~
The thickness of the transfer electrode is 0.5 μm. Further, when the insulating film 5 is formed over the entire surface, the upper part of the photodiode (8) becomes convex with respect to the upper part of the transfer electrode, thereby preventing the dispersion of incident light. Furthermore, since the transfer gate 11 for reading out the charge from the photodiode is provided in the vertical direction, the area of the photodiode can be relatively widened and the aperture ratio can be improved.
なお、Ｐ＋領域９はチャネルストッパ、Ｎ−領域１０は
垂直ＣＣＤの埋込チャネルである。この実施例では、転
送電極４−１．４−２が溝に埋込まれているので、トラ
ンスファゲート１１は溝の側面に設けられているが、溝
の深さをそれほど大きくしなくても効果はある。例えば
溝の底とＮ−領域８の底面をほぼ一致させる程度にすれ
ば、従来例の転送電極４−１．４−２を半導体基板の厚
さ方向へ単に平行移動した構造で良い。この場会、必ず
しも絶縁膜表面は凸にならないが、しかし従来より曲率
は小さくでき、スミアや感度むらは改善される。Note that the P+ region 9 is a channel stopper, and the N- region 10 is a buried channel of the vertical CCD. In this embodiment, the transfer electrodes 4-1, 4-2 are embedded in the groove, so the transfer gate 11 is provided on the side surface of the groove, but the effect can be achieved even if the depth of the groove is not very large. There is. For example, as long as the bottom of the groove and the bottom of the N- region 8 are made approximately coincident, a structure in which the conventional transfer electrodes 4-1, 4-2 are simply moved in parallel in the thickness direction of the semiconductor substrate may be used. In this case, the surface of the insulating film is not necessarily convex, but the curvature can be made smaller than in the past, and smear and sensitivity unevenness are improved.
第２図は本発明の第２の実施例を示す断面図であり、第
１図（Ｃ）に相当する。FIG. 2 is a sectional view showing a second embodiment of the present invention, and corresponds to FIG. 1(C).
この実施例では溝に転送電極を埋め込んだ後さらにシリ
カ膜７（シラノール液などを塗布して焼成したもの）を
図のように形成することにより、その後全面に形成する
絶縁膜を平坦にできる。よって入射してくる光の分散を
防ぐことができスミアなどを抑制できる。In this embodiment, after embedding the transfer electrode in the groove, a silica film 7 (coated with silanol solution or the like and fired) is further formed as shown in the figure, thereby making it possible to flatten the insulating film subsequently formed over the entire surface. Therefore, dispersion of incident light can be prevented and smear etc. can be suppressed.
遮光膜６の下地が平坦なので、アルミニウム膜の厚さは
透過率やエツチングのばらつきなどに対して最適化すれ
ばよく、段差被覆性を考慮する必要がないので感度特性
を均一にできる利点がある。Since the base of the light-shielding film 6 is flat, the thickness of the aluminum film can be optimized to account for variations in transmittance and etching, and there is no need to consider step coverage, which has the advantage of making sensitivity characteristics uniform. .
以上説明したように本発明は、転送電極を溝部に設ける
ことによりホトダイオード上において絶縁膜が比較的平
坦もしくは凸形にできることにより、入射してきた光が
その絶縁膜を通過する間に、ホトタイオードに隣接する
他の領域に散乱するのを防ぎスミアや感度の劣化を抑制
することができる効果がある。As explained above, the present invention allows the insulating film to be made relatively flat or convex on the photodiode by providing the transfer electrode in the groove, so that while the incident light passes through the insulating film, it This has the effect of preventing smearing and deterioration of sensitivity by preventing scattering to other areas.
第１図（ａ）は本発明の第１の実施例の平面図、第１図
（ｂ）は第１図（ａ）のｘ−ｘ’線断面図、第１図（ｃ
）は第１図（ａ）のＹ−Ｙ’線断面図、第２図は第２の
実施例を示す断面図、第３図は従来の固体撮像素子の断
面図である。
１・・・Ｐ型半導体基板、２・・・読出部、３・・・画
素分離領域、４−１．．４−２・・・転送電極、５絶縁
膜、６・・・アルミニウムからなる遮光膜、７・・・シ
リカ膜、８・・・Ｎ−領域、８′・・・ホトダイオード
、９・・・Ｐ＋領域、１０・・・Ｎ−領域、１１・・・
トランスファゲート。FIG. 1(a) is a plan view of the first embodiment of the present invention, FIG. 1(b) is a sectional view taken along the line xx' of FIG. 1(a), and FIG.
) is a sectional view taken along the Y-Y' line in FIG. 1(a), FIG. 2 is a sectional view showing the second embodiment, and FIG. 3 is a sectional view of a conventional solid-state image sensor. DESCRIPTION OF SYMBOLS 1...P-type semiconductor substrate, 2...Reading part, 3...Pixel isolation region, 4-1. ．． 4-2... Transfer electrode, 5 Insulating film, 6... Light shielding film made of aluminum, 7... Silica film, 8... N- region, 8'... Photodiode, 9... P+ Area, 10...N- area, 11...
transfer gate.
Claims (1)
信号電荷を蓄積するホトダイオード部と、このホトダイ
オード部に隣接して配列され前記ホトダイオード部に蓄
積された信号電荷を受取って転送電極により転送して読
み出す読出部と、この読出部の転送電極が配線され前記
ホトダイオード部を分離する画素分離領域を有する固体
撮像素子において、前記転送電極が前記半導体基板内に
掘られた溝部に設けられていることを特徴とする固体撮
像素子。A photodiode section arranged on a semiconductor substrate and accumulating signal charges generated by incident light; and a photodiode section arranged adjacent to this photodiode section to receive the signal charges accumulated in the photodiode section and transfer them by a transfer electrode to read them out. A solid-state imaging device having a readout section and a pixel isolation region where a transfer electrode of the readout section is wired and separates the photodiode section, characterized in that the transfer electrode is provided in a groove dug in the semiconductor substrate. A solid-state image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63110987A JPH01280354A (en) | 1988-05-06 | 1988-05-06 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63110987A JPH01280354A (en) | 1988-05-06 | 1988-05-06 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01280354A true JPH01280354A (en) | 1989-11-10 |
Family
ID=14549533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63110987A Pending JPH01280354A (en) | 1988-05-06 | 1988-05-06 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01280354A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5351081A (en) * | 1990-11-16 | 1994-09-27 | Sony Corporation | Solid-state imaging device having a light barrier layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59172764A (en) * | 1983-03-23 | 1984-09-29 | Toshiba Corp | Solid-state image pickup device |
| JPS6086975A (en) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPS61263155A (en) * | 1985-05-16 | 1986-11-21 | Toshiba Corp | Solid-state image pickup device and manufacture thereof |
| JPS6369264A (en) * | 1986-09-10 | 1988-03-29 | Nec Corp | Interline type solid-state image sensor |
-
1988
- 1988-05-06 JP JP63110987A patent/JPH01280354A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59172764A (en) * | 1983-03-23 | 1984-09-29 | Toshiba Corp | Solid-state image pickup device |
| JPS6086975A (en) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | Solid-state image pickup device |
| JPS61263155A (en) * | 1985-05-16 | 1986-11-21 | Toshiba Corp | Solid-state image pickup device and manufacture thereof |
| JPS6369264A (en) * | 1986-09-10 | 1988-03-29 | Nec Corp | Interline type solid-state image sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5351081A (en) * | 1990-11-16 | 1994-09-27 | Sony Corporation | Solid-state imaging device having a light barrier layer |
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