JPH04274365A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH04274365A JPH04274365A JP3061367A JP6136791A JPH04274365A JP H04274365 A JPH04274365 A JP H04274365A JP 3061367 A JP3061367 A JP 3061367A JP 6136791 A JP6136791 A JP 6136791A JP H04274365 A JPH04274365 A JP H04274365A
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- section
- solid
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は固体撮像素子に関し、特
にマイクロレンズが搭載されている固体撮像素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor, and more particularly to a solid-state image sensor equipped with a microlens.
【０００２】0002
【従来の技術】この種従来の固体撮像素子の受光部の断
面構造を図４に示す。同図に示されるように、半導体基
板１の表面領域内には光電変換を行うフォトダイオード
領域２と、前記フォトダイオード領域２で蓄えられた電
荷を転送する電荷転送領域３と、前記２つの領域を分離
するためのチャネルストッパ４とが形成されている。2. Description of the Related Art FIG. 4 shows a cross-sectional structure of a light receiving section of a conventional solid-state image sensor of this type. As shown in the figure, within the surface area of the semiconductor substrate 1 are a photodiode area 2 that performs photoelectric conversion, a charge transfer area 3 that transfers the charges stored in the photodiode area 2, and a charge transfer area 3 that transfers the charges stored in the photodiode area 2. A channel stopper 4 for separating the two is formed.
【０００３】また、半導体基板１の表面には酸化膜５を
介して入射光量を規定し、前記電荷転送領域３に光が漏
れ込まないようにするための遮光膜６が形成されている
。さらに、その上部には、ベース層７を介して光をフォ
トダイオード領域２に集光させるためのマイクロレンズ
８が形成されている。Further, a light shielding film 6 is formed on the surface of the semiconductor substrate 1 via an oxide film 5 to regulate the amount of incident light and to prevent light from leaking into the charge transfer region 3. Furthermore, a microlens 8 is formed on the top of the microlens 8 for condensing light onto the photodiode region 2 via the base layer 7 .
【０００４】0004
【発明が解決しようとする課題】ビデオカメラでは、図
５に示されるように、固体撮像素子１０へはカメラレン
ズ９を介して光が入射される。そのため、同図に示され
るように、素子の中央部における最大入射角度より周辺
部の最大入射角度の方が大きくなる（図示した例では、
中央部の最大入射角度が１７．０°であるのに対し、周
辺部でのそれは２６．６°となっている）。In a video camera, light is incident on a solid-state image sensor 10 through a camera lens 9, as shown in FIG. Therefore, as shown in the figure, the maximum incidence angle at the periphery is larger than the maximum incidence angle at the central part of the element (in the illustrated example,
The maximum angle of incidence at the center is 17.0°, while at the periphery it is 26.6°).
【０００５】上述した従来の固体撮像素子では、各画素
上にマイクロレンズが搭載されているので、入射光の角
度が垂直光に対し大きくなった場合、焦点がフォトダイ
オードからずれて遮光膜上となりフォトダイオードへの
入射光量が減少する。入射光角度と入射光量との関係を
図６に示す。従って、従来の固体撮像素子は感光部中央
のフォトダイオードへの入射光量に比べ感光部周辺部の
フォトダイオードへの入射光量の方が低くなるという欠
点を有していた。[0005] In the conventional solid-state image sensing device described above, a microlens is mounted on each pixel, so when the angle of incident light becomes large with respect to vertical light, the focus shifts from the photodiode and falls onto the light shielding film. The amount of light incident on the photodiode is reduced. FIG. 6 shows the relationship between the incident light angle and the amount of incident light. Therefore, the conventional solid-state image sensing device has a drawback in that the amount of light incident on the photodiode at the periphery of the photosensitive area is lower than the amount of light incident on the photodiode at the center of the photosensitive area.
【０００６】[0006]
【課題を解決するための手段】本発明の固体撮像素子は
、複数の光電変換領域と、入射光量を規定する遮光膜と
、前記光電変換領域上に光を集光させるマイクロレンズ
と、を有しており、さらに、前記遮光膜の開口面積が感
光部中央においてよりも周辺部での方が広くなされてい
る。[Means for Solving the Problems] A solid-state image sensor of the present invention includes a plurality of photoelectric conversion regions, a light shielding film that defines the amount of incident light, and a microlens that focuses light on the photoelectric conversion regions. Furthermore, the opening area of the light-shielding film is made wider at the periphery than at the center of the photosensitive area.
【０００７】[0007]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は、本発明の第１の実施例を示す断面
図であり、図２は固体撮像素子の感光部の平面模式図で
ある。図２のＡ−Ａ線、Ｂ−Ｂ線、Ｃ−Ｃ線で切った断
面図が、それぞれ図１の（ａ）の感光部左端図、（ｂ）
の感光部中央図、（ｃ）の感光部右端図に相当している
。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of the present invention, and FIG. 2 is a schematic plan view of a photosensitive section of a solid-state image sensor. The cross-sectional views taken along the A-A line, the B-B line, and the C-C line in FIG. 2 are the left end view of the photosensitive section in FIG.
This corresponds to the center view of the photosensitive section in (c) and the right end view of the photosensitive section in (c).
【０００８】図２に示されるように、インターライン型
固体撮像素子では、感光部１０ａにはフォトダイオード
２ａ、垂直ＣＣＤ３ａが設けられている。As shown in FIG. 2, in the interline solid-state image sensor, a photosensitive section 10a is provided with a photodiode 2a and a vertical CCD 3a.
【０００９】図１の（ａ）乃至（ｃ）に示されるように
、半導体基板１の表面領域内には光電変換を行うフォト
ダイオード領域２と、前記フォトダイオード領域２で蓄
えられた電荷を転送する電荷転送領域３と、前記２つの
領域を分離するためのチャネルストッパ４とが形成され
ている。As shown in FIGS. 1A to 1C, there is a photodiode region 2 for photoelectric conversion in the surface region of the semiconductor substrate 1, and a region for transferring charges stored in the photodiode region 2. A charge transfer region 3 for separating the two regions, and a channel stopper 4 for separating the two regions are formed.
【０００１０】また、半導体基板１の表面には酸化膜５
を介して入射光量を規定し、前記電荷転送領域３に光が
漏れ込まないようにするための遮光膜６が形成されてい
る。さらに、その上部には、ベース層７を介して光をフ
ォトダイオード領域２に集光させるためのマイクロレン
ズ８が形成されている。[00010] Furthermore, an oxide film 5 is formed on the surface of the semiconductor substrate 1.
A light shielding film 6 is formed to regulate the amount of incident light through the charge transfer region 3 and to prevent light from leaking into the charge transfer region 3. Furthermore, a microlens 8 is formed on the top of the microlens 8 for condensing light onto the photodiode region 2 via the base layer 7 .
【００１１】遮光膜６の開口領域は、感光部の中央にお
いて最も狭くなされ、左右に離れるにつれて広くなり、
左、右端で最も広くなっている。このように構成するこ
とにより、フォトダイオードへの入射光量の場所依存性
を解消することができ、感光部全体において感度むらを
なくすことができる。The opening area of the light-shielding film 6 is narrowest at the center of the photosensitive area, and becomes wider as it moves away from the left and right sides.
It is widest at the left and right ends. With this configuration, it is possible to eliminate the location dependence of the amount of light incident on the photodiode, and it is possible to eliminate sensitivity unevenness in the entire photosensitive section.
【００１２】図３は本発明の第２の実施例を示す断面図
である。本実施例においては、遮光膜６の開口領域は感
光部の中央部に対し、感光部左端になるにつれて開口領
域の右側が広がるようになされている。逆に、感光部の
右側では開口領域の左側が広がるようになされている。FIG. 3 is a sectional view showing a second embodiment of the present invention. In this embodiment, the opening area of the light shielding film 6 is configured such that the right side of the opening area widens as it approaches the left end of the photosensitive area with respect to the center of the photosensitive area. Conversely, on the right side of the photosensitive section, the left side of the aperture area widens.
【００１３】一般的には遮光膜の開口領域を広げると、
電荷転送領域への漏れ込み光によるスミアが増加する。
しかし、レンズからの入射光については、例えば感光部
左端では図５からも分るように右方向からは最大２６．
６°も傾いた光が入射されるが左方向からはほとんど入
射されない。したがって、本実施例のように、感光部左
端においては開口領域の右側を広げ、また、右端におい
てその左側を広げる場合には、開口領域が広くなっても
スミアはほとんど増加しない。Generally, when the opening area of the light-shielding film is widened,
Smear due to light leaking into the charge transfer region increases. However, as for the incident light from the lens, for example, at the left end of the photosensitive area, as can be seen from FIG.
Although light is incident at an angle of 6°, almost no light is incident from the left direction. Therefore, as in this embodiment, when the right side of the aperture area is widened at the left end of the photosensitive section and the left side thereof is widened at the right end, smear hardly increases even if the aperture area becomes wider.
【００１４】以上、開口領域に関しては左右方向につい
てのみ説明したが、上下方向についても同様である。す
なわち、開口領域は感光部中央部からの図２の上下方向
に離れる場合にもその面積は広げられる。Although only the horizontal direction has been described above regarding the opening area, the same applies to the vertical direction. That is, the area of the opening area is expanded even when the opening area is separated from the center of the photosensitive section in the vertical direction in FIG.
【００１５】上記各実施例では、インターライン型固体
撮像素子について説明したが、本発明はこれに限定され
るものではなく、他の型の撮像素子にも適用しうるもの
である。[0015] In each of the above embodiments, an interline type solid-state image pickup device has been described, but the present invention is not limited thereto, and can be applied to other types of image pickup devices.
【００１６】[0016]
【発明の効果】以上説明したように、本発明は、遮光膜
の開口領域の面積を感光部の中央部からの周辺部へ向か
って連続的に大きくしたものであるので、本発明によれ
ば、フォトダイオードへの入射光量を均一化することが
でき、全領域にわたって均等な感度特性を有する固体撮
像素子を実現することができる。[Effects of the Invention] As explained above, in the present invention, the area of the opening area of the light-shielding film is continuously increased from the center of the photosensitive area toward the peripheral area. , the amount of light incident on the photodiode can be made uniform, and a solid-state imaging device having uniform sensitivity characteristics over the entire area can be realized.
【図１】本発明の第１の実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】本発明の第１の実施例を示す模式平面図。FIG. 2 is a schematic plan view showing a first embodiment of the present invention.
【図３】本発明の第２の実施例を示す断面図。FIG. 3 is a sectional view showing a second embodiment of the invention.
【図４】従来例の断面図。FIG. 4 is a sectional view of a conventional example.
【図５】カメラレンズと固体撮像素子との位置関係を示
す模式図。FIG. 5 is a schematic diagram showing the positional relationship between a camera lens and a solid-state image sensor.
【図６】フォトダイオードへの入射光量の入射角度依頼
性を示すグラフ。FIG. 6 is a graph showing the dependence of the amount of light incident on the photodiode on the angle of incidence.
１ 半導体基板 ２ フォトダイオード領域 ２ａ フォトダイオード ３ 電荷転送領域 ３ａ 垂直ＣＣＤ ４ チャネルストッパ ５ 酸化膜 ６ 遮光膜 ７ ベース層 ８ マイクロレンズ ９ カメラレンズ １０ 固体撮像素子 １０ａ 感光部 1 Semiconductor substrate 2 Photodiode area 2a Photodiode 3 Charge transfer area 3a Vertical CCD 4 Channel stopper 5 Oxide film 6. Light shielding film 7 Base layer 8 Micro lens 9 Camera lens 10 Solid-state image sensor 10a Photosensitive part
Claims (1)
感光部と、感光部上を覆い各光電変換領域上に開口が形
成されている遮光膜と、前記遮光膜上に各光電変換領域
に対応して設けられたマイクロレンズと、を具備する固
体撮像素子において、前記遮光膜に形成されている開口
は、前記感光部の中央部における面積よりも感光部の周
辺部における面積の方が広くなされていることを特徴と
する固体撮像素子。1. A photosensitive section in which a plurality of photoelectric conversion regions are formed, a light-shielding film covering the photosensitive section and having an opening formed on each photoelectric conversion region, and a light-shielding film having an opening formed on each photoelectric conversion region on the light-shielding film. In the solid-state imaging device comprising a correspondingly provided microlens, the aperture formed in the light-shielding film has an area wider at a peripheral portion of the photosensitive portion than at a central portion of the photosensitive portion. A solid-state image sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061367A JPH04274365A (en) | 1991-03-01 | 1991-03-01 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3061367A JPH04274365A (en) | 1991-03-01 | 1991-03-01 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04274365A true JPH04274365A (en) | 1992-09-30 |
Family
ID=13169128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3061367A Pending JPH04274365A (en) | 1991-03-01 | 1991-03-01 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04274365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997037264A1 (en) * | 1996-03-29 | 1997-10-09 | Komatsu Ltd. | Confocal optical apparatus |
| JP2009141192A (en) * | 2007-12-07 | 2009-06-25 | Dainippon Printing Co Ltd | Solid-state imaging device and imaging apparatus using the same |
-
1991
- 1991-03-01 JP JP3061367A patent/JPH04274365A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997037264A1 (en) * | 1996-03-29 | 1997-10-09 | Komatsu Ltd. | Confocal optical apparatus |
| JP2009141192A (en) * | 2007-12-07 | 2009-06-25 | Dainippon Printing Co Ltd | Solid-state imaging device and imaging apparatus using the same |
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