JPH01262610A - Manufacture of magnetic thin film and magnetic recording medium - Google Patents
Manufacture of magnetic thin film and magnetic recording mediumInfo
- Publication number
- JPH01262610A JPH01262610A JP9040688A JP9040688A JPH01262610A JP H01262610 A JPH01262610 A JP H01262610A JP 9040688 A JP9040688 A JP 9040688A JP 9040688 A JP9040688 A JP 9040688A JP H01262610 A JPH01262610 A JP H01262610A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- magnetic
- targets
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 150
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims abstract description 82
- 238000004544 sputter deposition Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000001846 repelling effect Effects 0.000 claims abstract 2
- 229910000889 permalloy Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 230000005415 magnetization Effects 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 4
- 239000010952 cobalt-chrome Substances 0.000 claims description 4
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 24
- 238000009826 distribution Methods 0.000 abstract description 14
- 230000003628 erosive effect Effects 0.000 abstract description 12
- 238000005477 sputtering target Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 241001474374 Blennius Species 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
［利用分野］
本発明は、磁性薄膜及び磁性薄膜を用いる薄膜型の磁気
記録媒体の製造方法に関し、更に詳しくは対向ターゲッ
ト式スパッタ法による磁性薄膜及び磁気記録媒体のａ遣
方法に関する。Detailed Description of the Invention [Field of Application] The present invention relates to a method for manufacturing a magnetic thin film and a thin-film magnetic recording medium using the magnetic thin film, and more specifically, to a method for manufacturing a magnetic thin film and a magnetic recording medium using a facing target sputtering method. Regarding the method of sending.
［従来技術］
前述の薄膜型の磁気記録媒体は現在多用されている合成
樹脂基板上に磁性粒子を含有したバインダー樹脂を塗布
した塗布型の磁気記録媒体に比較して、大中に高密度記
録ができるためこれに替わるものとして注目されており
、その研究開発が盛んに進められている。そして８間ビ
デオテープ等の一部で蒸着テープが市販されており既に
多くの提案がなされている。[Prior Art] The thin film type magnetic recording medium described above is capable of high-density recording, compared to the currently widely used coated type magnetic recording medium in which a binder resin containing magnetic particles is coated on a synthetic resin substrate. It is attracting attention as an alternative to this, and its research and development is actively underway. Vapor-deposited tapes are commercially available for some types of video tapes, and many proposals have already been made.
中でも、Ｃｏ−Ｃｒ垂直磁化膜に代表される垂直磁気記
ｉ？Ａｌｌ１．体はその高密度記録特性から注目され、
その実用化が待望されている。Among them, perpendicular magnetism i? represented by Co-Cr perpendicular magnetization film. All1. The body has attracted attention due to its high-density recording properties,
Its practical application is eagerly awaited.
これに対して本発明者の一人も特公昭６２−５６５７５
号公報においてその高速生産を可能とする製造方法、具
体的には対向配置したターゲットを用いてその側方に配
した基板上に膜形成する対向ターゲット式スパッタ法を
用いた垂直磁気記録媒体の製造方法を提案した。この方
法は期待通りの高速生産性を示すが、その後の検討にお
いて、実用化に際しては薄膜形成全体に共通の膜形成後
に基板を含め全体がカールするカールの問題、更には製
造コストにおいて更に改良が必要なことがわかった。On the other hand, one of the inventors of the present invention also
The publication discloses a manufacturing method that enables high-speed production, specifically manufacturing a perpendicular magnetic recording medium using a facing target sputtering method in which a film is formed on a substrate placed on the side of a substrate using targets placed facing each other. proposed a method. Although this method shows high-speed productivity as expected, subsequent studies revealed that it is necessary to address the issue of curling, which is common to all thin film formation, in which the entire film, including the substrate, curls after film formation, and further improvements in manufacturing costs. I found out what was needed.
［発明の目的］
本発明はかかる問題に鑑みなされたもので、カールが小
さく、製造コストも低下できる磁性薄膜及び磁気記録媒
体の製造方法を目的としたものである。[Object of the Invention] The present invention was made in view of the above problems, and aims to provide a method for manufacturing a magnetic thin film and a magnetic recording medium that can reduce curl and reduce manufacturing costs.
［発明の構成及び作用］
上記目的は以下の本発明により達成される。すなわち本
発明は基板上にスパッタ法により磁性薄膜を形成するに
際し、あるいは基板上に軟磁性膜。[Structure and operation of the invention] The above objects are achieved by the present invention as described below. That is, the present invention is applicable to forming a magnetic thin film on a substrate by sputtering or forming a soft magnetic film on a substrate.
垂直磁化膜、保護膜を順次積層した磁気記録媒体を製造
するに際し、ターゲット面が空間を隔てて平行に対面す
る一対のターゲットからなる対向ターゲットを陰極とし
、夫々のターゲットの周辺部に電子を反撥する反射電極
を設けると共に前記ターゲット面に垂直な方向の磁界を
形成し、前記空間の側方で前記空間に対面するように配
置した前記基板上に前記対向ターゲットのスパッタリン
グにより前記各薄膜を形成することを特徴とするもので
ある。When manufacturing a magnetic recording medium in which a perpendicularly magnetized film and a protective film are sequentially laminated, a pair of opposing targets whose target surfaces face each other in parallel with a space in between are used as cathodes, and electrons are repelled to the periphery of each target. and forming a magnetic field in a direction perpendicular to the target surface, and forming each of the thin films by sputtering the opposing target on the substrate disposed on the side of the space so as to face the space. It is characterized by this.
ところで、上述の本発明は、以下のようにしてなされた
ものである。前述の特公昭６２−５６５７５号公報、更
には特開昭５７−１５８３８０号公報、特開昭５８−１
６４７８１号公報、特開昭５９−１１６３７６号公報等
に開示の従来の対向ターゲット式スパヅタ法は、ターゲ
ットホルダー回りを保護するため、その周囲に陽極と同
電位（通常アース電位）としたシールドを設けている。By the way, the above-mentioned present invention was made as follows. The above-mentioned Japanese Patent Publication No. 62-56575, as well as Japanese Patent Application Publication No. 57-158380 and Japanese Patent Application Publication No. 58-1
In the conventional facing target sputtering method disclosed in Japanese Patent Application Laid-open No. 64781 and Japanese Patent Application Laid-open No. 59-116376, etc., in order to protect the area around the target holder, a shield is provided around it at the same potential as the anode (usually ground potential). ing.
ところが、この従来法による種々の膜形成例を検討した
ところ、該シールドがターゲット間の対向空間に捕捉さ
れたプラズマ中の電子（γ電子、熱電子）を吸収し、そ
の密度を低下させる作用を奏しているのではないかと考
えられた。そこでターゲット外周部に沿って設けた磁界
発生手段によって制御される電子の軌道域に従来のシー
ルドに替えてシールドと全く反対の作用を奏する反射電
極を設けて、電子を反撥させるようにしたところ、放電
特性が大巾に改良され、低ガス圧、低電圧でカールの小
さい良好な特性の膜形成ができることが見出された。そ
して、更にターゲット外周部に沿って、その前面近傍に
電子を捕捉するターゲット面に平行な成分を有する補助
磁界を形成すると、前記放電特性が更に改良されると共
に侵食領域が大巾に拡大し、場合により従来不可能と思
われていたターゲット全面の均一な侵食もでき、製造コ
スト上も非常に有利となることが見出された０本発明は
これら知見に基いてなされたものである。However, after examining various examples of film formation using this conventional method, it was found that the shield absorbs electrons (γ electrons, thermoelectrons) in the plasma captured in the opposing space between the targets, reducing their density. It was thought that he might be playing music. Therefore, in place of the conventional shield, a reflective electrode, which has the opposite effect to the shield, was installed in the electron orbit region controlled by the magnetic field generating means provided along the outer circumference of the target, and the electrons were repelled. It was discovered that the discharge characteristics were greatly improved, and that a film with good characteristics and less curl could be formed at low gas pressure and low voltage. When an auxiliary magnetic field having a component parallel to the target surface is further formed along the outer circumference of the target near its front surface to capture electrons, the discharge characteristics are further improved and the eroded area is greatly expanded. In some cases, it has been found that the entire surface of the target can be eroded uniformly, which was thought to be impossible in the past, and it is very advantageous in terms of manufacturing costs.The present invention was made based on these findings.
従って本発明によれば、（１）ターゲットの侵食領域と
その分布が調節でき、基板中方向の膜厚分布の均一性が
大巾に拡大でき、生産性が向上できること、（ｚスパッ
タ電圧が低くでき、スパッタ膜質を向上させることので
きる高真空スパッタが容易に実現でき、カールが小さく
できること、更に（ａ基板への熱衝撃の調節が基板中方
向でさらに均一化され、高収率の生産ができること等従
来の問題が解決された磁性薄膜及び磁気記録媒体の製造
方法が実現される。Therefore, according to the present invention, (1) the target erosion area and its distribution can be adjusted, the uniformity of the film thickness distribution in the direction of the substrate can be greatly expanded, and productivity can be improved; high vacuum sputtering that can improve sputtered film quality and reduce curl; A method of manufacturing a magnetic thin film and a magnetic recording medium is realized in which conventional problems such as performance are solved.
このように本発明はマグネトロン式スパッタ法では高速
膜形成が難しい磁性薄膜従ってこれを用いる薄膜型の磁
気記録媒体の製造に有利に適用できるものである。As described above, the present invention can be advantageously applied to the production of magnetic thin films, which are difficult to form at high speed by magnetron sputtering, and thus to thin film magnetic recording media using the same.
本発明の適用できる磁性薄膜は特に制限されず、周知の
パーマロイに代表される軟磁性膜、記録層として周知の
ＣＯＰ、 ＣｏＣｒ合金等で代表される強磁性膜等全て
含むことは本発明の趣旨から明らかである。中でも高品
質が要求される垂直磁気記録媒体に用いるパーマロイ膜
、 ＣｏＣｒ合金垂直磁化膜にその膜質向上面から有利
に適用できる。すなわち後述の実施例に示すように本発
明においてポリエステルフィルム等ののプラスチックフ
ィルム上にＮｉ−Ｆｅ合金（パーマロイ）等の金属薄膜
を形成する場合にカールのない膜を形成できることがわ
かった。又垂直磁気記録媒体として注目されるＣ０−Ｃ
ｒ合金垂直磁化膜の形成において、本発明を用いると他
の蒸着法やスパッタ法と対比して低温で高い垂直抗磁力
を有する記録特性に優れた高品質の膜を形成できること
も明らかとなった。The magnetic thin film to which the present invention can be applied is not particularly limited, and the purpose of the present invention is to include all such as a soft magnetic film represented by the well-known permalloy, a well-known COP as a recording layer, a ferromagnetic film represented by a CoCr alloy, etc. It is clear from this. Among them, it can be advantageously applied to permalloy films and CoCr alloy perpendicular magnetization films used in perpendicular magnetic recording media, which require high quality, in terms of improving film quality. That is, as shown in the Examples below, it has been found that in the present invention, when a thin metal film such as Ni-Fe alloy (permalloy) is formed on a plastic film such as a polyester film, a film without curling can be formed. C0-C is also attracting attention as a perpendicular magnetic recording medium.
It has also been revealed that in the formation of r-alloy perpendicularly magnetized films, the present invention can be used to form high-quality films with excellent recording properties and high perpendicular coercive force at low temperatures compared to other vapor deposition and sputtering methods. .
又、本発明が適用できる磁気記録媒体は、上述したとこ
ろより磁性薄膜を用いるものであれば特に限定されない
ことは明らかであるが、本発明は高密度記録面から精密
な膜質制御が要求される垂直磁気記録媒体具体的には基
板上に垂直磁化膜。Further, it is clear from the above that the magnetic recording medium to which the present invention is applicable is not particularly limited as long as it uses a magnetic thin film, but the present invention requires precise control of film quality due to the high density recording surface. Perpendicular magnetic recording media Specifically, a perpendicular magnetization film on a substrate.
保護膜を、あるいは軟磁性膜、垂直磁化膜、保護膜を順
次積層した垂直磁気記録媒体に内部歪の小さい膜が得ら
れる点で有利に適用できる。なおこれら各膜の間に中間
膜を含むものにも適用できる。It can be advantageously applied to perpendicular magnetic recording media in which a protective film, or a soft magnetic film, a perpendicular magnetization film, and a protective film are sequentially laminated, since a film with small internal strain can be obtained. Note that the present invention can also be applied to a structure including an intermediate film between each of these films.
かかる場合も積層する金膜は本発明方法により形成する
ことが好ましい、これら垂直磁気記録媒体の軟磁性膜、
垂直磁化膜、保護膜には、公知のものが全て適用できる
が、前述したところより、垂直磁化膜がＣｏＣｒ合金Ｉ
ＩＩ（前述の特公昭６２−５６５７５号公報の如く不純
物を含んで良い）よりなるものに、更にはこれに加えて
軟磁性層がパーマロイ膜からなるものに好ましく適用で
きる。そしてこれら構成に保護層としてＣＯ２Ｏ３から
主としてなるコバルト酸化物、あるいはグラファイトカ
ーバイトを組み合わせたものは全体としてカールが少な
く、耐久性に優れている点でより好ましい。In such a case, the gold film to be laminated is preferably formed by the method of the present invention, and the soft magnetic film of these perpendicular magnetic recording media,
All known perpendicular magnetization films and protective films can be used, but as mentioned above, the perpendicular magnetization film is made of CoCr alloy I.
It is preferably applicable to those in which the soft magnetic layer is made of a permalloy film. A combination of these structures with cobalt oxide mainly composed of CO2O3 or graphite carbide as a protective layer is more preferable because it has less curl as a whole and is excellent in durability.
このように本発明は上述の形成する薄膜の膜質向上の他
、適用できる基板材料の範囲の拡大等磁性薄膜及び磁気
記録媒体の製造において大きな寄与をなすものである。As described above, the present invention makes a significant contribution to the production of magnetic thin films and magnetic recording media by not only improving the quality of thin films formed as described above but also expanding the range of applicable substrate materials.
以下本発明の詳細を実施例に基いて説明する。The details of the present invention will be explained below based on examples.
第１図は本発明の実施例に用いた対向ターゲット式スパ
ッタ装置の全体構成を示す概略図、第２図はその一方の
ターゲットの平面図、第３１！ｌは基板と直交する第２
図のＡＢ線での側断面図である。FIG. 1 is a schematic diagram showing the overall configuration of a facing target type sputtering apparatus used in an embodiment of the present invention, FIG. 2 is a plan view of one of the targets, and FIG. 31! l is the second point perpendicular to the substrate
FIG. 3 is a side sectional view taken along line AB in the figure.
第１図から明らかな通り、本装置は前述の特開昭５７−
１５８３８０号公報等で公知の対向ターゲット式スパッ
タ装置と基本的に同じ構成となっている。As is clear from Fig. 1, this device is a
It has basically the same configuration as the facing target type sputtering apparatus known in Japanese Patent No. 158380 and the like.
すなわち、図において１０は真空槽、２０は真空槽１０
を排気する真空ポンプ等からなる排気系、３０は真空槽
１０内に所定のガスを導入して真空槽１０内の圧力を１
０゛１〜１０→■０「「程度の所定のガス圧力に設定す
るガス導入系である。That is, in the figure, 10 is a vacuum chamber, and 20 is a vacuum chamber 10.
An exhaust system 30 is composed of a vacuum pump, etc. for evacuating the air, and the exhaust system 30 introduces a predetermined gas into the vacuum chamber 10 to reduce the pressure inside the vacuum chamber 10 to 1.
This is a gas introduction system that is set to a predetermined gas pressure of about 0゛1~10→■0.
そして、真空槽１０内には、図示のごとくターゲット部
１００ 、１００°により基板Ｓに面する辺が長い長方
形の１対のターゲットＴ、Ｔ’が、空間を隔てて平行に
対面するように配設しである。In the vacuum chamber 10, as shown in the figure, a target part 100, a pair of rectangular targets T and T' with long sides facing the substrate S at 100 degrees, are arranged so as to face each other in parallel with a space between them. It is set up.
ターゲット部１００ 、１００°は全く同じ構成であり
、以下その一方のターゲット１００に基いて説明する。The target portions 100 and 100° have exactly the same configuration, and the following description will be based on one of the targets 100.
ターゲット部１００は従来と異なり、第２図、第３図か
ら明らかなように、プラスマ捕捉用垂直磁界と補助磁界
を形成するように磁界発生手段１２０がターゲット′ｒ
背後でなく、その周囲に配置され、且つその前面にγ電
子等の電子を反撥する負電位の反射電極１１０を設けた
構成となっている。すなわち、第２図、第３図において
１０１は、その上にターゲットＴが取着されるターゲッ
トホルダーで、ターゲットＴと同じ外形の所定肉厚の筒
状体からなり、その上には、テフロン（デュポン社商品
名）等の絶縁材からなる絶縁ブロック１０２を介して、
図で上面にターゲットＴを冷却するための第２図に点線
で示すようなジグザグの連続した冷却溝１０３ａを全面
に亘って穿設したステンレス等の熱伝導性の良い材から
なる冷却板１０３がボルトにより固定されている。そし
て、冷却板１０３上には、り−ゲット′１゛がその周囲
に所定間隔で穿設したボルト穴１０４を介してボルト１
０４ａで固定される。冷却板１０３のこの冷却溝１０３
ａには、接続口１０３ｂに図示省略した冷却配管が接続
され、冷却媒体の循環により直接ターゲット１゛全面を
冷却するようになっている。なお、ターゲットボルダ１
０１の上面、絶縁ブロック１０２．冷却板１０３．ター
ゲットＴの各接触面は、当然の事ながらパツキン（図示
省略）によりシールされている０以上の構成によりター
ゲットＴの交換が簡単になると共にターゲットＴは隅々
迄均−冷却が可能となり、従来の磁石内蔵型に比較する
とターゲットの冷却効率は１０倍以上となり、堆積速度
が大［１１に向上し、生産性、安定運転面で効果大であ
る。The target section 100 differs from the conventional one in that, as is clear from FIGS. 2 and 3, the magnetic field generating means 120 is configured to generate a vertical magnetic field for plasma trapping and an auxiliary magnetic field.
It has a configuration in which a reflective electrode 110 with a negative potential that repels electrons such as γ electrons is provided not behind but around it and in front of it. That is, in FIGS. 2 and 3, 101 is a target holder on which the target T is attached, and is made of a cylindrical body having the same external shape as the target T and a predetermined thickness. Through an insulating block 102 made of an insulating material such as DuPont (trade name),
A cooling plate 103 made of a material with good thermal conductivity such as stainless steel is provided with continuous zigzag cooling grooves 103a as shown by dotted lines in FIG. 2 on the upper surface thereof. It is fixed with bolts. On the cooling plate 103, bolts are inserted through bolt holes 104 drilled at predetermined intervals around the mount '1'.
It is fixed at 04a. This cooling groove 103 of the cooling plate 103
A cooling pipe (not shown) is connected to the connecting port 103b, and the entire surface of the target 1 is directly cooled by circulation of a cooling medium. In addition, target boulder 1
01, insulating block 102. Cooling plate 103. Naturally, each contact surface of the target T is sealed with a gasket (not shown), which makes it easy to replace the target T, and enables even cooling to every corner of the target T. Compared to the built-in magnet type, the target cooling efficiency is more than 10 times, and the deposition rate is greatly improved [11], which is highly effective in terms of productivity and stable operation.
電子を反射する反射電極１１０は、本例では断面り字型
の銅、鉄等により図示の通りターゲットＴの周囲に沿っ
た枠構成として、冷却板１０３の側面に直接ボルトで取
着し、冷却板１０３を介して冷却できるようにすると共
にその電位はターゲット１゛と同電位になるようになっ
ている。In this example, the reflective electrode 110 that reflects electrons is made of copper, iron, or the like and has a rectangular cross section, and is attached as a frame along the periphery of the target T with bolts directly to the side surface of the cooling plate 103 as shown in the figure. It is designed so that it can be cooled through the plate 103 and its potential is the same as that of the target 1'.
なお、本例では反射ｆｆＨｉＮｏは、その対向辺部１１
０ａがターゲット′ｒの前面より対向空間側（図で上方
）に数市程度突き出すように配置しである。Note that in this example, the reflection ffHiNo is
0a is arranged so that it protrudes from the front surface of the target 'r to the opposite space side (upward in the figure) by about several inches.
これは磁性体ターゲットの場合に対向辺部１１０ａを後
述の磁界発生手段１２０の磁極として用いるためである
。This is because in the case of a magnetic target, the opposing side portion 110a is used as a magnetic pole of a magnetic field generating means 120, which will be described later.
ターゲットホルダー１０１の外側にはステンレス等の非
磁性導電材からなるチャンネル型の磁石ホルダー１０５
がボルト（図示省略）により固定されている。磁石ホル
ダー１０５は、その内部に磁界発生手段１２０のコア１
２１．永久磁石１２２が収納できるようにその先端部外
側にチャンネル型ホルダー部１０５ａが形成されており
、又ターゲット′ｒ及び冷却板１０３と所定の間隙１０
６を有するように配置されている。On the outside of the target holder 101 is a channel-shaped magnet holder 105 made of a non-magnetic conductive material such as stainless steel.
is fixed with a bolt (not shown). The magnet holder 105 has the core 1 of the magnetic field generating means 120 inside it.
21. A channel-shaped holder part 105a is formed on the outside of the tip of the permanent magnet 122 so that it can be housed therein, and a predetermined gap 10 is formed between the target 'r and the cooling plate 103.
6.
磁界発生手Ｐ！１１２０のコア１２１と永久磁石１２２
とは、図示の通り、鉄、パマロイ等の軟磁性材の板状体
からなる発生磁界を全周に亘って均一化するためのコア
１２１が図で上部の前面側に位置し、その背後に永久磁
石１２２がターゲットＴのスパッタ面に垂直方向の磁界
を発生する磁極配置で、非磁性体ターゲットの場合に有
効な補助磁界が形成できるようにコア１２１の前面がタ
ーゲットＴの前面に略一致するように磁石ホルダー１０
５にボルト等により固定される。なお、永久磁石１２２
は、所定長の角棒状磁石をその合成磁界が前記プラズマ
捕捉用磁界を形成するように並設したものである。Magnetic field generating hand P! 1120 core 121 and permanent magnet 122
As shown in the figure, a core 121 made of a plate-shaped body of soft magnetic material such as iron or pamaloy for making the generated magnetic field uniform over the entire circumference is located on the upper front side in the figure, and behind it The permanent magnet 122 has a magnetic pole arrangement that generates a magnetic field perpendicular to the sputtering surface of the target T, and the front surface of the core 121 substantially matches the front surface of the target T so that an effective auxiliary magnetic field can be formed in the case of a non-magnetic target. like magnet holder 10
5 with bolts or the like. In addition, the permanent magnet 122
In this example, rectangular bar-shaped magnets having a predetermined length are arranged in parallel so that their combined magnetic field forms the plasma trapping magnetic field.
従って磁界は反射電極１１０の材質によりコア１２１又
は反射電極１１０の対向辺部１１０ａの前面を磁極とし
て発生ずるので、ターゲット′ｉ゛の周辺に均一な前述
の垂直磁界及び補助磁界ならなるプラズマ捕捉用磁界を
生ずる。なお磁界発生手段１２０はターゲットホルダー
１０１を介して接地されている。Therefore, depending on the material of the reflective electrode 110, a magnetic field is generated using the core 121 or the front surface of the opposing side 110a of the reflective electrode 110 as a magnetic pole, so that the plasma trapping is performed using the above-mentioned perpendicular magnetic field and auxiliary magnetic field that are uniform around the target 'i'. Generates a magnetic field. Note that the magnetic field generating means 120 is grounded via the target holder 101.
接地されたリング状のアノード電極１３０が、反射電極
１１０前方（図で上部）の近傍空間にターゲ・ｙト間空
間を囲むように設けられている。このアノード電極１３
０の配置によって、スパッタ時のγ電子の捕集を調節で
き、その位置によりターゲット’！”の侵食及び基板ｒ
ｉ力方向膜厚分布の調節が出来る。A grounded ring-shaped anode electrode 130 is provided in a space near the front (upper part in the figure) of the reflective electrode 110 so as to surround the space between the target and the target. This anode electrode 13
The collection of γ electrons during sputtering can be adjusted by arranging 0, and depending on the position, the target'! ”Erosion and substrate r
The film thickness distribution in the force direction can be adjusted.
磁石ホルダ１０５のホルダ部１０５ａの外面には、ステ
ンレス等からなる金１＋７１０７が布設されている。On the outer surface of the holder portion 105a of the magnet holder 105, gold 1+7107 made of stainless steel or the like is laid.
金網１０７により、これら部位に堆積するスパッタ付着
物のスパッタ中での剥離すなわち異常放電が防止され、
又清掃が簡単になり、生産性、安全運転面で大きな効果
が得られる０反射電極１１０は冷却板１０３に直接取り
付け、アノード電極１３０は冷却媒体を通す冷却路１３
１を設けてあり、水冷することによりこれらの加熱が防
止されるため、スパッタ速度をあげても、基板への輻射
熱が少ないので基板の熱変形が少なく、高速生産性が実
現される。The wire mesh 107 prevents the sputter deposits deposited on these parts from peeling off during sputtering, that is, abnormal discharge.
In addition, cleaning becomes easy and a great effect is obtained in terms of productivity and safe operation.The zero reflective electrode 110 is directly attached to the cooling plate 103, and the anode electrode 130 is attached to the cooling path 13 through which the cooling medium passes.
1, and water cooling prevents these heatings, so even if the sputtering speed is increased, there is little radiant heat to the substrate, so there is little thermal deformation of the substrate, and high-speed productivity is achieved.
アノード電＠１３０の材質は導電材であれば良く、前述
のコア１２１と同様の軟磁性材でも良く、その他銅、ス
テンレス等でも良い０反射電極１１０は目的に応じ導電
材、絶縁材共に適用される０例えば電位を電源から積極
的にかける場合は導電材が、直流スパッタリングで自己
バイアスを利用する場合は絶縁材が適用される０図の配
置及び後述するその作用から明らかな通り、反射型＠１
１０はスバツタされるので、反射電極１１０の材質はタ
ーゲット材そのもの、又はこれらの構成材の一つあるい
はその組み合わせを用いることが、形成される薄膜に余
分の成分が混入する恐れがない点で好ましい、なお、本
例では、反射電極１１０の電位をターゲット１゛と同一
にしているが、γ電子等を反射するに必要な負電極にな
るように、ターゲット電位と異なる電源を用いて又はタ
ーゲット電位とアース電位とを分割して形成することが
出来る。そして反射量ｆｉ１１０は実質的にスパッタさ
れない電位にすることが好ましい。The material of the anode electrode 130 may be any conductive material, and may be a soft magnetic material similar to the core 121 described above, or copper, stainless steel, etc. The reflective electrode 110 may be made of either a conductive material or an insulating material depending on the purpose. For example, a conductive material is used when a potential is actively applied from a power supply, and an insulating material is used when a self-bias is used in DC sputtering.0As is clear from the arrangement in the figure and its effect described later, reflective type@ 1
Since the reflective electrode 10 is sputtered, it is preferable to use the target material itself, one of these constituent materials, or a combination thereof as the material of the reflective electrode 110, since there is no risk of excess components being mixed into the formed thin film. In this example, the potential of the reflective electrode 110 is the same as that of the target 1, but in order to make it a negative electrode necessary to reflect γ electrons, a power source different from the target potential is used or the target potential is changed. and the ground potential can be divided and formed. The reflection amount fi110 is preferably set to a potential that does not substantially cause sputtering.
第５図、第６図にこれらの点を考慮した生産設備に適し
た反射電極１１０．磁界発生手段１２０．アノード電極
１３０の取付け！ｆｉ造を示す、第５図は、反射電極１
１０の対向辺部１１０ａを交換可能とした例で、図示の
通り、対向辺部１１０ａに反射板１１１をビス等により
取り付けたもので、反射板１１１のみターゲットと同一
組成とする等必要に応じ交換すれば良い、なお反射板１
１１を図示の通りターゲット側突き出ずことにより、タ
ーゲット′ｒ周辺部のエロージョンが調整でき、ターゲ
ット′ｒの取り付はボルト等のスパッタリングの防止が
可能となる。FIGS. 5 and 6 show a reflective electrode 110 suitable for production equipment that takes these points into consideration. Magnetic field generating means 120. Attaching the anode electrode 130! FIG. 5 shows the reflective electrode 1.
In this example, the opposing sides 110a of No. 10 are replaceable, and as shown in the figure, a reflector 111 is attached to the opposite side 110a with screws, etc., and can be replaced as necessary, such as by making only the reflector 111 have the same composition as the target. All you have to do is reflector 1
By not protruding 11 toward the target as shown in the figure, erosion around the target 'r can be adjusted, and sputtering of bolts and the like can be prevented when attaching the target 'r.
アノード電極１３０は、磁界発生手段１２０を囲むシー
ルド板と兼用し、その先端部に冷却管１３２を配設する
ことによりその加熱を防止するようにしである。この構
造によりターゲット周辺の冷却が強化されると共に基板
等への輻射熱が減少し、スパッタ速度の向上が可能とな
る。第６図は、第５図に対し反射電極１１０の冷却強化
によりスパッタ速度の更なる向上を計ったものである。The anode electrode 130 also serves as a shield plate surrounding the magnetic field generating means 120, and a cooling pipe 132 is disposed at its tip to prevent heating thereof. This structure strengthens cooling around the target and reduces radiant heat to the substrate, etc., making it possible to improve sputtering speed. In FIG. 6, the sputtering rate is further improved by strengthening the cooling of the reflective electrode 110 compared to FIG. 5.
すなわち、冷却板１０３の側部に直接磁石ホルダ１０５
を取着し、磁界発生手段１２０を収納して、磁界発生手
段１２０を冷却するようにすると共に、そのコア１２１
を冷却通路１２１ａを形成した管状のコアとして、その
上に直接ビス止め等により板状の反射電極１１０を取着
し、コア１２１の冷却通路１２１ａに冷却水等を流すこ
とにより、反射電極１１０及び磁界発生手段１２０を冷
却するようになっている。従って、反射電極１１０及び
磁界発生手段１２０の冷却が強化され、スパッタ速度の
更なる向上が可能となる。なお、反射量ｆ！１１０を独
立した電位にする場合は、コア１２１と磁石１２２の間
に絶縁材を介在させて電気絶縁すれば冷却面及び磁界発
生面で殆ど影響はない。That is, the magnet holder 105 is directly attached to the side of the cooling plate 103.
is attached, the magnetic field generating means 120 is housed, the magnetic field generating means 120 is cooled, and the core 121 is
is used as a tubular core with a cooling passage 121a formed thereon, a plate-shaped reflective electrode 110 is attached directly onto the core with screws, etc., and by flowing cooling water or the like through the cooling passage 121a of the core 121, the reflective electrode 110 and The magnetic field generating means 120 is cooled. Therefore, the cooling of the reflective electrode 110 and the magnetic field generating means 120 is strengthened, making it possible to further improve the sputtering rate. In addition, the amount of reflection f! When 110 is set to an independent potential, if an insulating material is interposed between the core 121 and the magnet 122 to electrically insulate the core 121 and the magnet 122, there will be almost no effect on the cooling surface and the magnetic field generation surface.
第１図に戻って、以上の構成のターゲット部１００ 、
１００°に取着された対向ターゲットｉ’、Ｔ’の側方
には、磁性薄膜などが形成される長尺の基板Ｓを保持す
る基板保持手段４０が設けられている。Returning to FIG. 1, the target unit 100 with the above configuration,
A substrate holding means 40 for holding a long substrate S on which a magnetic thin film or the like is formed is provided on the sides of the opposing targets i' and T' attached at 100 degrees.
基板保持手段４０は、図示省略した支持ブラケットによ
り夫々回転自在かつ互いに軸平行に支持された、ロール
状の基板Ｓを保持する繰り出しロール４１と支持ロール
４２と、巻取ロール４３との３個のロールからなり、基
板ＳをターゲットＴ、Ｔ’間の空間に対面するようにス
パッタ面に対して略直角方向に保持するように配しであ
る。支持ロール４２はその表面温度が調節可能となって
いる。The substrate holding means 40 consists of a feed roll 41, a support roll 42, and a take-up roll 43, which hold a roll-shaped substrate S, and are supported rotatably and parallel to each other by support brackets (not shown). It consists of a roll and is arranged so as to hold the substrate S in a direction substantially perpendicular to the sputtering surface so as to face the space between the targets T and T'. The surface temperature of the support roll 42 can be adjusted.
なお、ターゲット部１００ 、１００°の他の（図で左
側の）側方に、もう１つの長尺の基板Ｓを保持する基板
保持手段（図示せず）を設けることが出来る。Note that a substrate holding means (not shown) for holding another long substrate S can be provided on the other side of the target section 100 at 100 degrees (on the left side in the figure).
一方、スパッタ電力を供給する直流電源からなる電力供
給手段５０はプラス側をアースに、マイナス側をターゲ
ットＴ、Ｔ’に夫々接続する。従って、電力供給手Ｖｉ
５０からのスパッタ電力は、アースをアノード゛とし、
ターゲットＴ、Ｔ’をカソードとして、アノード、カソ
ード間に供給される。On the other hand, a power supply means 50 consisting of a DC power source for supplying sputtering power has its positive side connected to the ground and its negative side connected to the targets T and T', respectively. Therefore, the power supplier Vi
The sputtering power from 50, with the ground as the anode,
The target T and T' are used as cathodes and are supplied between an anode and a cathode.
なお、本例では導電材ターゲットに適した直流電源を示
したが、絶縁物ターゲットの場合には必要に応じ公知の
高層“波電源に変更すれば良い。In this example, a DC power source suitable for a conductive material target is shown, but in the case of an insulating material target, a known high-rise "wave power source" may be used as necessary.
以上の通り、上述の構成は前述の特開昭５７−１５８３
８０号公報のものと基本的には同じ構成であり、公知の
通り高速低温スパッタが可能となる。すなわち、ターゲ
ット’ｒ、”ｔ”間の空間に、プラズマ捕捉用垂直磁界
の作用によりスパッタガスイオン。As mentioned above, the above-mentioned structure is
The structure is basically the same as that of the publication No. 80, and high-speed low-temperature sputtering is possible as is known. That is, sputtering gas ions are generated in the space between targets 'r and 't' by the action of a vertical magnetic field for plasma trapping.
スパッタにより放出されたγ電子等が束縛された高密度
プラズマが形成される。従って、ターゲットＴ、Ｔ’の
スパッタが促進されて前記空間より析出量が増大し、基
板Ｓ上への堆積速度が増し、高速スパッタが出来る上、
基板ＳがターゲットＴ。A high-density plasma is formed in which γ electrons and the like emitted by sputtering are bound. Therefore, sputtering of the targets T and T' is promoted, the amount of precipitation increases from the space, the deposition rate on the substrate S increases, and high-speed sputtering is possible.
The substrate S is the target T.
′ｒ″の側方にあるので低温スパッタが出来る。Since it is on the side of 'r', low-temperature sputtering can be performed.
ところで、ターゲットＴ、Ｔ’の表面からスパッタされ
る高いエネルギーを持つγ電子は前述のターゲットＴ、
Ｔ’の空間に放射されるが、ターゲラｉ・の中央及び外
周部近傍までは磁界の影響を受けないため、はぼ−様な
γ電子密度になりスパッタに使われる八「÷イオンの形
成がターゲット１゛。By the way, the high-energy γ electrons sputtered from the surfaces of the targets T and T' are
Although it is emitted into the space of T', the center and the vicinity of the outer periphery of the target beam i are not affected by the magnetic field, resulting in a hollow-like γ electron density and the formation of 8'÷ions used for sputtering. Target 1゛.
Ｔ′の全面でほぼ一様になされる。一方、ターゲット外
周縁部に形成されている強い磁界領域には、第４図に示
すようにターゲット’ｒ、’ｒ′に亘るターゲット面に
垂直方向の垂直磁力線Ｍのほか、ターゲットＴを介して
の帰還磁気回路によりターゲット面に平行な成分を有す
る補助磁力線Ｍ′が形成されている０図で点線は非磁性
ターゲットで非磁性の反射電極１１０を用いた場合すな
わち磁極がコア１２１の前面となる場合、−点鎖線は磁
性ターゲットで磁性の反射電極１１０を用いた場合すな
わち磁極が反射電極１１０の前面となる場合である。It is applied almost uniformly over the entire surface of T'. On the other hand, in the strong magnetic field region formed at the outer peripheral edge of the target, as shown in FIG. An auxiliary magnetic line of force M' having a component parallel to the target surface is formed by the feedback magnetic circuit of FIG. In this case, the dashed line indicates the case where a magnetic target is used and the magnetic reflective electrode 110 is used, that is, the magnetic pole is in front of the reflective electrode 110.
このためターゲットＴ、Ｔ”の中央部の表面から放射さ
れた陰極電位降下部（ターゲット表面数−の間隔）で加
速されるγ電子は、垂直磁力線Ｍに沿ってつる巻き状に
拘束され、ターゲット７゜′ｒ′の間を往復運動するが
、ターゲット外縁部で生ずるγ電子の一部は、補助磁力
線Ｍ′に拘束されて磁界発生手段１２０のコア１２１面
に向かって運動する。とごろが、特開昭５９−１６６３
７６号公報等の従来技術で使用しているアノードとして
作用する接地されたシールドを磁界発生手段１２０上に
設ける場合にはターゲット外縁部に捕捉されたγ電子の
一部はシールドに吸収されると考えられ、従って、ター
ゲット周辺部ではプラズマ密度が中央部より小さくなり
、ターゲットのエロージョン、形成される膜の厚さが中
心部に片寄る傾向があった。For this reason, the γ electrons emitted from the central surface of the targets T, T'' and accelerated at the cathode potential drop area (at an interval of - the number of target surfaces) are restrained in a spiral shape along the perpendicular magnetic field lines M, and 7°'r', some of the γ electrons generated at the outer edge of the target are restrained by the auxiliary magnetic lines of force M' and move toward the surface of the core 121 of the magnetic field generating means 120. , Japanese Patent Publication No. 59-1663
When a grounded shield that acts as an anode is provided on the magnetic field generating means 120, which is used in the prior art such as in Japanese Patent No. 76, some of the γ electrons captured at the outer edge of the target are absorbed by the shield. Therefore, the plasma density at the periphery of the target was lower than that at the center, and there was a tendency for target erosion and the thickness of the formed film to be biased toward the center.
これを解決するためにはターゲットＴ、Ｔ’で発生する
γ電子をターゲット間で吸収されることなく往復させる
必要があり、スパッタ電圧を高くする、あるいはスパッ
タガス圧を高める等の対策が考えられるが、その効果に
は限界があり、又それに伴う膜質等別の問題があった。To solve this problem, it is necessary to make the γ electrons generated in the targets T and T' go back and forth between the targets without being absorbed, and countermeasures such as increasing the sputtering voltage or sputtering gas pressure can be considered. However, there are limits to its effectiveness, and there are other problems associated with this, such as film quality.
これに対して本発明では、磁界発生手段１２０のコア１
２１部の前面にγ電子を反射する負電位の反射電極１１
０を設けているので、第４図から自明のごとく、磁力線
Ｍ、Ｍ’に沿って運動する捕捉されたγ電子は、反射電
極１１０表面で反射し、吸収されることなくターゲット
’ｌ’、Ｔ’間に戻される。In contrast, in the present invention, the core 1 of the magnetic field generating means 120
Reflection electrode 11 with a negative potential that reflects γ electrons on the front surface of the 21 part
0, as is obvious from FIG. 4, the captured γ electrons moving along the lines of magnetic force M and M' are reflected on the surface of the reflective electrode 110 and are not absorbed by the target 'l', It is returned between T'.
従って、周縁部の強い磁界で捕捉されたγ電子等は吸収
されることなくターゲット間空間に蓄積されるので、後
述の実施例に示す通り放電特性が大ＩＪに改良され、従
来実現が困難であった低電圧。Therefore, the γ electrons etc. captured by the strong magnetic field at the periphery are not absorbed and are accumulated in the space between the targets, so the discharge characteristics are improved to a large IJ as shown in the examples below, which is difficult to achieve in the past. There was a low voltage.
低ガス圧のスパッタが可能となり内部歪従ってカールや
アルゴンガス等の混入の少ない高品質薄膜の形成が可能
となったと考えられる。It is thought that sputtering at low gas pressure became possible, making it possible to form a high-quality thin film with less internal distortion, less curling, and less contamination by argon gas.
又、大中にターゲットのエロージョン領域が改良される
が、これは次のように考えられる。すなわち、補助磁力
線Ｍ′によりターゲット周縁部にはターゲット面と平行
な磁界によりマグネトロンスパッタと同様な捕捉磁界が
形成され、反射電極１１０で反射されたγ電子等が効果
的に周縁部表面に捕捉され周縁部のプラズマ密度が高く
でき、よって周縁部まで略均−なスパッタすなわちエロ
ージョンが達成できると考えられる。また、アノード電
極１３０の配置によっては、γ電子の吸収を調節するこ
とができる。Furthermore, the erosion area of the target is improved, which can be considered as follows. That is, a trapping magnetic field similar to that of magnetron sputtering is formed at the peripheral edge of the target by the auxiliary magnetic force lines M', and a magnetic field parallel to the target surface forms a trapping magnetic field similar to that of magnetron sputtering, and γ electrons etc. reflected by the reflective electrode 110 are effectively captured on the peripheral edge surface. It is believed that the plasma density at the peripheral edge can be increased, and therefore substantially uniform sputtering, or erosion, can be achieved up to the peripheral edge. Further, depending on the arrangement of the anode electrode 130, absorption of γ electrons can be adjusted.
このため、本発明によれば、ターゲットＴ。Therefore, according to the invention, the target T.
′ｒ′の全面を一様にスパッタできることはもちろん、
γ電子の゛拘束を厳密に行なうことができるので、基板
の巾方向の膜厚分布を広い範囲に亘って任意に調節する
ことができるほか、前述の種々の作用が得られるのであ
る。Of course, the entire surface of 'r' can be sputtered uniformly,
Since the γ electrons can be strictly constrained, the film thickness distribution in the width direction of the substrate can be arbitrarily adjusted over a wide range, and the various effects described above can be obtained.
以上から明らかな通り、本発明の反射電極は、磁力線Ｍ
、Ｍ’に拘束された電子を反射するものであれば良く、
従ってタープ・ットと同極性の電位具体的に負電位であ
ることが必要であるが、電位の大きさは形成する膜等に
より異なり実験的に決めるべきである。ターゲットと同
電位にすると電源が簡略できる点で有利である。なお直
流スパッタリングの場合には単に絶縁体を配するのみで
も良い。As is clear from the above, the reflective electrode of the present invention has magnetic field lines M
, as long as it reflects the electrons bound by M',
Therefore, it is necessary that the potential has the same polarity as the tarp, specifically a negative potential, but the magnitude of the potential varies depending on the film to be formed and should be determined experimentally. Having the same potential as the target is advantageous in that the power supply can be simplified. Note that in the case of DC sputtering, it is sufficient to simply provide an insulator.
又反射電極の設置箇所は、前述の電子を最も効果的に反
射できる磁束発生手段のコア前面が好ましいが、この近
傍又は／及びターゲット周辺部の近傍であっても良いこ
とはその作用から明らかである。Further, it is preferable that the reflective electrode be installed in the front surface of the core of the magnetic flux generating means that can most effectively reflect the electrons described above, but it is clear from its effect that it may also be installed near this area or/and near the periphery of the target. be.
その形状も、ターゲット周囲を連続して囲むリング状が
好ましく、更には板状体でターゲットと磁界発生手段と
の間の隙間をカバーするものが好ましいが、場合によっ
ては必要箇所に部分的に設けるのみでも良く、その形状
も棒状体、網状体等でも良いことはその作用から明らか
である。Preferably, the shape is a ring that continuously surrounds the target, and more preferably a plate-like member that covers the gap between the target and the magnetic field generating means, but depending on the case, it may be provided partially at necessary locations. It is clear from its action that it may be used alone, and its shape may also be a rod-like body, a net-like body, etc.
又、前述の作用から本発明において補助磁界は必須では
ないが、ターゲットエロージョン領域の拡大という点で
補助磁界を少なくともターゲット周辺部の前面近傍に形
成することが好ましい、この補助磁界は、前述の如く垂
直磁界発生用の磁界発生手段と共用すると構成が簡単と
なり、好ましいが、別体としても良いことは云うまでも
ない。Further, although the auxiliary magnetic field is not essential in the present invention due to the above-mentioned effect, it is preferable to form the auxiliary magnetic field at least near the front surface of the peripheral area of the target from the viewpoint of expanding the target erosion area. It is preferable to share the magnetic field generating means for generating a vertical magnetic field because the configuration becomes simple, but it goes without saying that it may be used as a separate unit.
また、磁界発生手段も構成簡単な永久磁石を用いる例を
示したが、公知の他の構成も適用できることは云うまで
もない。Further, although an example in which the magnetic field generating means uses a permanent magnet with a simple configuration has been shown, it goes without saying that other known configurations can also be applied.
又、アノード電極も、電子の吸収が適切にできる位置に
設ければ良く、各反射電極、ターゲットの近傍又は周囲
に設けて良く、又ターゲット間の中間位置に１個設けて
も良い、その形状も前述の棒状リングの他、網状体等で
も良く、ターゲット全周に亘ってシールドと兼ねて設け
ても、必要な箇所のみに設けても良い、ターゲットのエ
ロージョンの均−北面からはその全周に亘ってそのター
ゲット間空間を囲むように設けることが好ましい。Further, the anode electrode may be provided at a position where electrons can be absorbed appropriately, and may be provided near or around each reflective electrode or target, or one anode electrode may be provided at an intermediate position between targets, depending on its shape. In addition to the above-mentioned rod-shaped ring, it can also be a net-like body, etc., and it can be provided all around the target to serve as a shield, or it can be provided only in necessary places. It is preferable to provide the target so as to surround the space between the targets.
アノード電極の配置は形成される膜の膜厚分布に大きな
相関を有するので、目的に応じて実験的に定めることが
好ましい。Since the arrangement of the anode electrode has a strong correlation with the thickness distribution of the film to be formed, it is preferable to determine it experimentally depending on the purpose.
又、本発明が適用されるターゲットの形状も矩形９円形
等特に限定されないことは本発明の趣旨から明らかであ
るが、膜厚分布の制御、エロージョンの不均一化等で問
題の多い中広の長方形ターゲットにおいて本発明の効果
はより大きく発現する。なお、本発明は先に本発明者ら
が特願昭６１−１４２９６２号で提案した分割されたタ
ーゲットにも適用できる。Furthermore, it is clear from the spirit of the present invention that the shape of the target to which the present invention is applied is not particularly limited, such as rectangular or 9 circular shapes, but it can be The effects of the present invention are more pronounced in rectangular targets. The present invention can also be applied to the divided target previously proposed by the present inventors in Japanese Patent Application No. 142962/1982.
以下、本発明を実施例に基づいて具体的に説明する。Hereinafter, the present invention will be specifically explained based on Examples.
実施例１
反射電極１１０の電子反挽作用及びターゲット周辺部の
ターゲット面に平行な磁界成分を有する補助磁界による
プラズマ捕捉作用の効果を確認するため第３図、第４図
のターゲット構造を基本とし、以下の通り反射電ｆｆ１
ｌｌｏ 、磁界発生手段１２０の位置を変更して膜形成
を行なった。Example 1 In order to confirm the effects of the electron repulsion effect of the reflective electrode 110 and the plasma trapping effect of the auxiliary magnetic field having magnetic field components parallel to the target surface in the peripheral area of the target, the target structure shown in FIGS. 3 and 4 was used as the basic structure. , the reflected charge ff1 is as follows:
Film formation was performed by changing the position of the magnetic field generating means 120.
なお、ターゲット構造の基本寸法は以下の通りである。Note that the basic dimensions of the target structure are as follows.
ターゲットＴ、Ｔ’は１２４噛Ｘ５７５鴎の１１広の長
方形で厚さが２０間のターゲット、ターゲットＴ、Ｔ’
の間隔！は１２０ｍｍで、ターゲット１゛。Targets T, T' are 11 wide rectangles of 124 bites x 575 seaweed, with a thickness of 20 mm, targets T, T'
interval! is 120mm, target 1゛.
Ｔ′の夫々の前面から２市突き出して鉄製の反射電極１
１０を配置し、その電位をターゲットと同電位とした。Two iron reflecting electrodes 1 are protruded from the front of each T'.
10 was placed at the same potential as the target.
磁界発生手Ｐ！１１２０にアルニコ７磁石を用い、反射
電極１１０表面の磁場強度を、ターゲット表面と垂直方
向に３３０ガウスとした。ターゲット１’、Ｔ’の夫々
に対して棒状のアノードリング１３０を電極１１０面よ
り１０ｍ＋はなした空間に配した。Magnetic field generating hand P! An Alnico 7 magnet was used as the magnet 1120, and the magnetic field strength on the surface of the reflective electrode 110 was set to 330 Gauss in the direction perpendicular to the target surface. A rod-shaped anode ring 130 was placed in a space 10 m+ apart from the electrode 110 surface for each of the targets 1' and T'.
そしてターゲットＴ、Ｔ’は垂直磁気記録媒体の垂直磁
気記録層として公知のＣｏ−Ｃｒ （Ｃｒ含有量：１
７ｗｔ％）合金ターゲットとし、Ｃｏ−Ｃｒ合金膜を形
成した。Targets T and T' are Co-Cr (Cr content: 1
7wt%) alloy target, and a Co-Cr alloy film was formed.
第７図に検討したその他のターゲット構造を示す、上述
の第４図のターゲット構造（タイプＥ１という）に対し
、第７図（Ａ）に示すタイプＥ２は補助磁界のない例で
磁極となるＣｏ製の反射電極１１０の対向辺１１０ａを
タータフ５１表面と略同−面の位置とし、補助磁界が形
成されないようにしたものである。第７図（Ｂ）に示す
タイプＥ３は、Ｃｏ製の反射電＠１１０を磁界発生手段
１２０の前面でターゲットＴの周囲でその表面より後方
に位置せしめた例で、第７図（Ｃ）に示すタイプＥ４は
タイプＥ３において反射電極を除去したものすなわち従
来例に近いタイプで、補助磁界もない例である。FIG. 7 shows other target structures considered. In contrast to the target structure shown in FIG. 4 (referred to as type E1), type E2 shown in FIG. The opposite side 110a of the reflective electrode 110 made of aluminum is positioned approximately on the same plane as the surface of the tartuff 51 to prevent the formation of an auxiliary magnetic field. Type E3 shown in FIG. 7(B) is an example in which a reflected electron @110 made of Co is positioned behind the surface of the target T in front of the magnetic field generating means 120, and is shown in FIG. 7(C). Type E4 shown is a type E3 with the reflective electrode removed, that is, a type close to the conventional example, and does not have an auxiliary magnetic field.
以上の各タイプによる膜形成において、Ａ「ガス圧Ｐを
０．１〜１．ＯＰａの範囲で変えた時のスパッタ電流Ｉ
がＩ＝１０Ａに一定の条件下でのスパッタ電圧Ｖとの関
係を第８図に示す０図の横軸は＾「ガス圧Ｐ（Ｐａ）、
縦軸はスパッタ電圧Ｖ（ボルト）である、又、この膜
形成で形成されたＣｏ−Ｃｒ垂直膜のターゲットＴの長
辺方向（５７５ｃｍ ｒｆｊ ）の膜厚分布を第９図に
示す０図の横軸は、基板上のｒｆｓ方向位置で、縦軸は
膜厚で相対値である０図のＣはターゲットｒの中心に対
応する基板の中心位置である。In film formation by each of the above types, A "sputtering current I when gas pressure P is changed in the range of 0.1 to 1.OPa"
Figure 8 shows the relationship between sputtering voltage V under a constant condition of I = 10 A. The horizontal axis of Figure 0 is
The vertical axis is the sputtering voltage V (volts), and the film thickness distribution of the Co-Cr vertical film formed in this film formation in the long side direction (575 cm rfj) of the target T is shown in Fig. 9. The horizontal axis is the position on the substrate in the rfs direction, and the vertical axis is the film thickness, which is a relative value. C in Figure 0 is the center position of the substrate corresponding to the center of target r.
なお、この場合のターゲットのエロージョン分布はタイ
プＥ１では驚くべきことにターゲット全面に亘り略均−
と理想的な分布となるが、タイプＥ２〜Ｅａは共に中心
部が深く周辺部が浅い従来と同様若しくは若干改善され
た分布である。In this case, the erosion distribution of the target is surprisingly uniform over the entire surface of the target for type E1.
However, both types E2 to Ea have distributions that are deep in the center and shallow in the periphery, similar to or slightly improved from the conventional distribution.
従来例に近いタイプＥ４と本発明のＥ１〜Ｅ３との比較
より本発明の反射電極によりスパッタ特性が大ｒｉｘに
改善され、従来困難であった低ガス圧。Comparison between type E4, which is close to the conventional example, and E1 to E3 of the present invention shows that the reflective electrode of the present invention greatly improves the sputtering characteristics and achieves low gas pressure, which was previously difficult.
低電圧でのスパッタが可能となり、後述の通りアルゴン
ガス等の混入の少ない、内部歪、カール等も小さい高品
質薄膜の形成が可能となることがわかる。そして補助磁
界を組み合わせることによりターゲットのエロージョン
領域が大ｒｉに改良され、略全面均−という理想に近い
エロージョンが可能となると共に、横巾の長いターゲッ
トにおいても形成される薄膜の膜厚が均一化でき、原単
位が良く且つ製品歩留りも良いという実用化に際し待望
の性能が得られることも確認された。It can be seen that sputtering at a low voltage becomes possible, and as will be described later, it becomes possible to form a high-quality thin film with less contamination by argon gas, etc., and with less internal strain, curl, etc. By combining the auxiliary magnetic field, the erosion area of the target is greatly improved, making it possible to achieve near-ideal erosion that is almost uniform over the entire surface, and to make the thickness of the thin film formed even on a long target. It was also confirmed that the long-awaited performance in practical use, such as high unit consumption and good product yield, can be obtained.
実施例２
第５図に示すターゲット構造とし、その機械的寸法は実
施例１と同様とし、そのうちターゲットＴ、Ｔ″をＮｔ
ｓｏＦ６ｔ５８Ｏ５（添数字：ｗｔ％）のパーマロイを
用いて公知の二層構造の垂直磁気記録媒体の軟磁性層を
長尺のポリエチレンテレフタレート（Ｐ Ｅ ’Ｉ’
）フィルム基板上に連続的に形成した。Example 2 The target structure was as shown in FIG. 5, its mechanical dimensions were the same as in Example 1, and targets T and T'' were
SoF6t58O5 (subscript number: wt%) permalloy is used to replace the soft magnetic layer of a known two-layer perpendicular magnetic recording medium with a long polyethylene terephthalate (P E 'I'
) formed continuously on a film substrate.
又反射量［１１１０の反射板１１１には１板を用いた。Further, one plate was used as the reflecting plate 111 with a reflection amount of [1110].
ターゲット’ｒ、’ｒ’の間隔！を１３０．１６０．２
００−と変えた場合について、Ａ「ガス圧Ｐを０．１か
ら１、ＯＰａの範囲でＩＯＡの一定スバッタ電流■に対
するスパッタ電圧Ｖを求めた結果を第１０図に示す。Interval between targets 'r, 'r'! 130.160.2
FIG. 10 shows the results of determining the sputtering voltage V for a constant IOA sputtering current (2) with the gas pressure P in the range of 0.1 to 1 and OPa for the case where the sputtering voltage is changed to 00-.
第１１図には、ロール４２の表面温度が６０〜７０℃の
条件下で５０μｌ厚みのＰＥＴフィルムを走行させなが
らＰＥＴフィルムの片面に０．３μｌの厚みのパーマロ
イ層（Ｎｉ８５Ｆｅ１５Ｈａ５）を形成した場合のカー
ルＫＥＩの値を示す、なおり−ルにｐは第１２図に示す
如く、直径りが３０市の円板のサンプルにおいてカール
による両端の変位ｈ１．ｈ２の合計が最大となる直径に
おける変位ｈｌ、ｈ２を用い、にｐ＝（（ｈ！＋ｂｚ
）／２Ｄ）Ｘ１００（％）と定義した。FIG. 11 shows a case where a 0.3 μl thick permalloy layer (Ni85Fe15Ha5) is formed on one side of the PET film while running a 50 μl thick PET film under the condition that the surface temperature of the roll 42 is 60 to 70°C. As shown in FIG. 12, the value of the curl KEI is indicated by p, which is the displacement h1. Using the displacement hl, h2 at the diameter where the sum of h2 is maximum, p=((h!+bz
)/2D)X100(%).
本発明によればガス圧Ｐを調節することによりＰ Ｅ’
ｒ’フィルムの片面にパーマロイ層を形成しても驚くべ
きことににｐを略零にすることすなわちカールのない薄
膜形成が出来ることがわかった。また磁気特性を調べた
ところ、ガス圧Ｐが０．１〜０．５Ｐａの範囲で抗磁力
をｌｌｃは２エルステツド（Ｏｅ）以下でありすぐれた
軟磁気特性を示した。すなわち初透磁率μｍ （ＣＧＳ
単位）を調べなところ、例えばターゲット間隔１ ＝２
００ ｎｍで成膜した場合にに０〜０％の部分では初透
磁率μｍは３００〜４５０で磁気異方性が少なかった。According to the present invention, by adjusting the gas pressure P, P E'
Surprisingly, it has been found that even if a permalloy layer is formed on one side of the r' film, it is possible to reduce p to approximately zero, that is, to form a thin film without curling. Further, when the magnetic properties were investigated, the coercive force was less than 2 Oe when the gas pressure P was in the range of 0.1 to 0.5 Pa, indicating excellent soft magnetic properties. That is, the initial magnetic permeability μm (CGS
For example, target interval 1 = 2
When the film was formed with a thickness of 0.00 nm, the initial magnetic permeability μm was 300 to 450 in the 0% to 0% portion, and the magnetic anisotropy was small.
Ｃｏ−Ｃｒ垂直膜とパーマロイ膜を設けた二Ｎ膜媒体
ではこれまで、パーマロイの＋＋Ｃ≦３エルステッド（
ｏｅ）では磁気異方性が増大するためフレキシブルディ
スクには周方向の信号レベル変動すなわちモジュレーシ
ョンが生じる問題があった。なお反射を極１１０を設け
ない従来装置を用いた場合では、スパッタガス圧Ｐを０
．５Ｐａより低くするとスパッタ電圧Ｖは８００ｖ以上
となりカールにｐを零にすることが出来なかった。Until now, in a 2N film medium with a Co-Cr vertical film and a Permalloy film, the permalloy's ++C≦3 Oersted (
oe), the magnetic anisotropy increases, so the flexible disk has the problem of circumferential signal level fluctuations, that is, modulation. Note that when using a conventional device without the reflection pole 110, the sputtering gas pressure P is set to 0.
．． When the sputtering voltage was lower than 5 Pa, the sputtering voltage V was 800 V or more, and it was not possible to reduce p to zero in curling.
これに対して、二層膜の垂直磁気記録媒体において、主
磁極励磁型ヘッドを用いるとμｉが２００以上では信号
レベルはほぼ一様になることか知られており上述したと
ころから本発明により垂直磁気記録フレキシブルディス
クの場合の上記課題である信号レベル変動を解消できき
る見通しが得られた。On the other hand, in a two-layer perpendicular magnetic recording medium, it is known that when a main pole excitation type head is used, the signal level becomes almost uniform when μi is 200 or more. The prospect of solving the above-mentioned problem of signal level fluctuation in the case of magnetic recording flexible disks has been obtained.
又、上記膜形成においてターゲット’Ｉ’、’Ｔ”の間
隔！が１２０間の場合に比較して２００１ｗ＋の場合に
は、同一投入電力に対して基板へ堆積する生産速度は３
０％増加する結果を得た。In addition, in the case of 2001W+, the production rate of deposition on the substrate for the same input power is 3 compared to the case where the interval between targets 'I' and 'T' is 120 in the film formation described above.
The result was an increase of 0%.
実施例３
実施例２のうちターゲットＴ、’Ｉ”をＣ０ａｏＣｒ２
゜（添数字：ｗｔ％）の合金ターゲット、反射板１１１
にＣｏ板を用い、ガス圧０．ｔＰａ、スパッタ電圧６０
０■の条件下で６．５μｍ、１２μｌ厚のポリエチレン
−２，６−ナフタレートフィルムをロール４２の表面温
度を１３０℃にして走行させながら、Ｃｏ−Ｃｒ薄膜を
膜厚０．１μｍに形成し、磁気テープ用の垂直磁気記録
媒体を作成した。 Ｃｏ−Ｃｒ層の結晶構造は最密六方
晶（ｈｃｐ）でＣ軸配向しており、ロッキング曲線から
求めたＣ軸分散Δθ５ｏは５°であった。垂直抗磁力１
１Ｃ１は８００ ｏｅ、面内抗磁力１１ｃｚは１５０ｏ
ｅと、垂直磁気記録に適した磁気特性であった。なお、
反射電極１１０を設けない従来装置の場合、ロール４２
の温度１３０℃ではｔｌｃは５５０ ｏｅと低い値とな
った。従って、本発明によれば高密度記録により適した
Ｃｏ−Ｃｒ系垂直磁化膜を形成できることがわかった。Example 3 In Example 2, target T, 'I' is C0aoCr2
° (subscript number: wt%) alloy target, reflector plate 111
Using a Co plate, the gas pressure was 0. tPa, sputtering voltage 60
A Co-Cr thin film was formed to a thickness of 0.1 μm while running a polyethylene-2,6-naphthalate film with a thickness of 6.5 μm and 12 μl under conditions of 0.0 μm and a surface temperature of the roll 42 of 130° C. , created a perpendicular magnetic recording medium for magnetic tape. The crystal structure of the Co--Cr layer was a hexagonal close-packed crystal (hcp) with C-axis orientation, and the C-axis dispersion Δθ5o determined from the rocking curve was 5°. Vertical coercive force 1
1C1 is 800 oe, in-plane coercive force 11cz is 150o
e, and the magnetic properties were suitable for perpendicular magnetic recording. In addition,
In the case of a conventional device in which the reflective electrode 110 is not provided, the roll 42
At a temperature of 130°C, TLC was as low as 550 oe. Therefore, it has been found that according to the present invention, a Co--Cr perpendicular magnetization film that is more suitable for high-density recording can be formed.
ハイビジョンＶＴＲ等に必要な高密度記録用テープとカ
ールのないかつ垂直磁気異方性にずぐれた垂直磁気記録
４膜媒体の形成が出来る。It is possible to form a high-density recording tape necessary for high-definition VTRs, etc., and a perpendicular magnetic recording four-film medium that is free from curl and has excellent perpendicular magnetic anisotropy.
実施例４
実施例２のうちターゲットＴ、Ｔ’をＣＯのターゲット
、反射板１１１にＣＯ板を用い実施例３で作成したＣｏ
−Ｃｒ合金薄膜上に重ねて、次の条件で主としてＣＯ２
Ｏ３からなるコバルト酸化物の保護層を形成し、保護層
付垂直磁気記録媒体を製作した。Example 4 In Example 2, targets T and T' were CO targets, and the reflector 111 was a CO plate.
- Overlaid on a Cr alloy thin film, mainly CO2 under the following conditions.
A protective layer of cobalt oxide consisting of O3 was formed to produce a perpendicular magnetic recording medium with a protective layer.
（１）スパッタガス、圧：＾ｒ７０Ｖｏ１％、 ０２３
０Ｖｏ１％ 。(1) Sputtering gas, pressure: ^r70Vo1%, 023
0Vo1%.
０．５Ｐａ
＋２］ ロール表面温度：１００℃
（３保護層膜厚：１６０人
得られた垂直磁気記録媒体は中方向のカールが無視でき
るほど小さく、これを１ ／ ２ ”幅にスリットし、
ステンレスのガイドビンに１８０度沿わせて走行させて
、磁気記録面の摺動を調べた結果、市販のメタル塗布型
テープと摩擦係数は、はぼ同じ大きさで０．３であり、
塗布型テープに類似したすべり性であった０本発明によ
り良好な特性の酸化物薄膜が形成できることが確認され
た。0.5 Pa +2] Roll surface temperature: 100°C (Thickness of 3 protective layers: 160 people) The perpendicular magnetic recording medium obtained had negligible curl in the middle direction, and was slit into 1/2" width.
As a result of examining the sliding movement of the magnetic recording surface by running it 180 degrees along a stainless steel guide bin, the coefficient of friction was approximately the same as that of a commercially available metal-coated tape, at 0.3.
It was confirmed that an oxide thin film with good properties could be formed by the present invention, which had a slip property similar to that of a coated tape.
実施例５
第１図の装置で第５図に示すターゲット構造で、ターゲ
ットＴ、Ｔ’としてＮｊａｏＦｅｌｓＭＯｓ （添数
字ｗｔ％） 、Ｃ０ａｏＣｒ２ｏ （添数字ｗｔ％）及
びグラファイトカーボン（カーボンを１５−論厚のＣｕ
バッキングプレート上５Ｉｌ−厚のカーボンを接着）タ
ーゲットを１１次用いて、５０μｍ厚みのポリエステル
フィルムを走行させながら両面にカーボン保護層付き二
層型垂直磁気記録媒体を作成した。Example 5 Using the apparatus shown in FIG. 1 with the target structure shown in FIG. Cu
A two-layer perpendicular magnetic recording medium with carbon protective layers on both sides was fabricated using an 11th-order target (adhering 5Il-thick carbon on the backing plate) while running a 50 μm thick polyester film.
Ｎ！ａｏＦｅｔ５ＨＯｓ （パーマロイ）ターゲット
：真空槽を３ Ｘ １０４Ｐａまで排気後、アルゴンガ
ス圧０．２Ｐａ、ロール４２の表面温度７０℃でポリエ
ステルフィルムの両面に０，５μｍの厚み形成した。N! aoFet5HOs (permalloy) target: After the vacuum chamber was evacuated to 3×10 4 Pa, a thickness of 0.5 μm was formed on both sides of a polyester film at an argon gas pressure of 0.2 Pa and a roll 42 surface temperature of 70° C.
Ｃｏ Ｃｒ ターゲット： Ｎ！ａｏＦＱ１ｓＨＯ
ｓターゲットをＣ０ａｏＣｒ２ｏターゲットに交換し、
真空槽を３×１０→Ｐａまで排気し、アルゴンガス圧０
．ＩＰａ 、ロール４２の表面温度１２０℃で、パーマ
ロイ層の上にＣｏ−Ｃ「層を０．１３μｍ形成した。Co Cr Target: N! aoFQ1sHO
Replace s target with C0aoCr2o target,
Evacuate the vacuum chamber to 3×10→Pa and reduce the argon gas pressure to 0.
．． IPa, a 0.13 μm thick Co-C layer was formed on the permalloy layer at a surface temperature of 120° C. of the roll 42.
カーボンターゲット： Ｃ０ａｏＣｒ２ｏターゲットを
カーボンターゲットに交換し、真空槽を３ ｘ １０’
Ｐａまで排気し、アルゴンガス圧２Ｐａ、ロール４２
の表面温度１００℃で、Ｃｏ−Ｃｒ ＮＪの上にカーボ
ン層を０．０２μｍ形成した。Carbon target: Replace C0aoCr2o target with carbon target, vacuum chamber 3 x 10'
Evacuate to Pa, argon gas pressure 2 Pa, roll 42
A carbon layer of 0.02 μm was formed on the Co—Cr NJ at a surface temperature of 100° C.
３．５インチ径に媒体を打抜いてカールを調べたところ
１％以下であった。パーマロイの抗磁力は３〜４ｏｅ、
Ｃｏ−Ｃｒの垂直抗磁カフ００ｏｅであった。When the medium was punched out to a diameter of 3.5 inches and the curl was examined, it was found to be less than 1%. The coercive force of permalloy is 3 to 4 oe,
It was a Co-Cr vertical antimagnetic cuff 00oe.
このサンプルを離散的に配置したヘッド方式（第１１回
に日本応用磁気学界学術講演概要集ＩＰ＾−４（１９８
７） ）により記録再生特性を調べた。ヘッドに単磁極
型垂直ヘッド（電子通信学会大会詞演論集１−２０９（
１９８６） ）を用いた。A head system in which these samples are arranged discretely (11th Japan Applied Magnetics Society Academic Lecture Summary Collection IP^-4 (198
7)) The recording and reproducing characteristics were investigated. The head is a single-pole vertical head (IEICE Conference Proceedings 1-209).
1986)) was used.
主磁極トラック幅１００μ１．主磁極膜厚０．３μｍの
場合２にｔｃ＋ニおける規格化出力２５ｎＶｏ−ｐ ／
’ｒ”、μｎ ０ｍ／ｓ出力レベルが５０％になる記録
密度Ｄ５゜は８０）Ｈｃｉと非常に高密度記録できるこ
とが確認できた。又その耐久性を評価したところ３００
万バス以上と従来のＪＩＳ規格を満たすことが確認でき
た。Main pole track width 100μ1. When the main pole film thickness is 0.3 μm, the normalized output at 2 to tc+2 is 25 nVo-p /
'r'', μn 0m/s The recording density D5° at which the output level is 50% is 80)Hci, which confirms that very high density recording is possible.Also, when its durability was evaluated, it was 300.
It was confirmed that the current JIS standard was met with over 10,000 busses.
［発明の効果］
以上の通り本発明によればターゲット１’、Ｔ′のエロ
ージョンはターゲット全面でほぼ均一におこなわれるの
で膜作成の原単位が向上し、［１１方向膜厚分布が均一
化すると共にターゲットの冷却効率が向上するので生産
性が向上し、低いスパッタ電圧下で低いスパッタガス圧
で膜形成が出来るので内部歪カールの少ない膜が得られ
る。従って例えば、Ｃｏ−Ｃｒ 、 Ｎｉ−Ｆｅ−Ｎｏ
等の結晶組織の制御を必要とする薄膜形成にはずぐれた
特性を発現する。[Effects of the Invention] As described above, according to the present invention, the erosion of targets 1' and T' is performed almost uniformly over the entire surface of the target, so that the basic unit of film production is improved, and [11 direction film thickness distribution is made uniform] At the same time, since the cooling efficiency of the target is improved, productivity is improved, and since a film can be formed under a low sputtering voltage and a low sputtering gas pressure, a film with less internal strain curl can be obtained. Therefore, for example, Co-Cr, Ni-Fe-No
It exhibits exceptional properties for forming thin films that require control of the crystal structure.
なお実施例では、Ｃｏ−Ｃｒについて説明したが、Ｃｏ
−Ｎｉ 、 Ｃｏ−Ｐｔ等の磁性薄膜について本発明が
適用できることはいうまでもない、特に、磁気記録層の
如く、結晶構造を厳密に制御するとともに粒子寸法１粒
子間歪を調節する必要がある場合に、スパッタ空間のプ
ラズマ条件を広範囲に調節できる本発明は効果的に適用
できる。このように本発明は磁性薄膜及び薄膜磁気記録
媒体の工業生産。In addition, although Co-Cr was explained in the example, Co
It goes without saying that the present invention can be applied to magnetic thin films such as -Ni, Co-Pt, etc. In particular, as in magnetic recording layers, it is necessary to strictly control the crystal structure and adjust the grain size and the strain between grains. In some cases, the present invention, which allows the plasma conditions in the sputtering space to be adjusted over a wide range, can be effectively applied. As described above, the present invention relates to the industrial production of magnetic thin films and thin film magnetic recording media.
品質向上に寄与するところ大である。This greatly contributes to quality improvement.
第１図は、本発明の実施例に用いた対向ターゲット式ス
パッタ装置の全構成の説明図、第２図はそのターゲット
部の平面図、第３図は第２図のＡ−Ｂ線での断面図、第
４図は本発明の詳細な説明するため磁力線の分布の説明
図、第５図、第６図はターゲット横道の他の構成の部分
側断固、第７図は実施例１における反射電極、磁界発生
手段の位置を示す説明図、第８図は実施例１での各タイ
プによる放電特性のグラフ、第９図は同じく各タイプに
よる基板方向の膜圧分布のグラフ、第１０図は実施例２
での放電特性のグラフ、第１１図は回倒でのガス圧とカ
ールの関係を示すグラフ、第１２図はカールの定義の説
明図である。
Ｔ、Ｔ’：ターゲット、１０：真空槽、１１０：反射電
極、 １２０ ：磁界発生手段、 １３０ ニアノード
電極９Ｍ：垂直磁力線２Ｍ′：補助磁力線大２図
Ｘ３図
大４図
ｒ−ｍ−へ一一一５
頃■図
ｔ１０Ａ
テア０図
Ｐ（Ｐａ）
Ｘｉｚ図FIG. 1 is an explanatory diagram of the entire configuration of a facing target type sputtering apparatus used in an embodiment of the present invention, FIG. 2 is a plan view of the target section, and FIG. 3 is a diagram taken along line A-B in FIG. 4 is an explanatory diagram of the distribution of magnetic lines of force for detailed explanation of the present invention, FIGS. 5 and 6 are partial side views of other configurations of the target lateral path, and FIG. 7 is a reflection diagram in Example 1. An explanatory diagram showing the positions of electrodes and magnetic field generating means, FIG. 8 is a graph of discharge characteristics for each type in Example 1, FIG. 9 is a graph of film pressure distribution in the substrate direction for each type, and FIG. 10 is a graph of the film pressure distribution in the substrate direction for each type. Example 2
FIG. 11 is a graph showing the relationship between gas pressure and curl during rotation, and FIG. 12 is an explanatory diagram of the definition of curl. T, T': Target, 10: Vacuum chamber, 110: Reflecting electrode, 120: Magnetic field generating means, 130 Near node electrode 9M: Vertical magnetic field line 2M': Auxiliary magnetic field line Large 2 figure Around 15 ■Figure t10A Thea 0 figure P (Pa) Xiz figure
Claims (5)
し、ターゲット面が空間を隔てて平行に対面する一対の
ターゲットからなる対向ターゲットを陰極とし、夫々の
ターゲットの周辺部に電子を反撥する反射電極を設ける
と共に前記ターゲット面に垂直な方向の磁界を形成し、
前記空間の側方で前記空間に対面するように配置した前
記基板上に前記対向ターゲットのスパッタリングにより
前記磁性薄膜を形成することを特徴とする磁性薄膜の製
造方法。1. When forming a magnetic thin film on a substrate by sputtering, a pair of opposing targets whose target surfaces face each other in parallel across a space serve as cathodes, and a reflective electrode is provided around each target to repel electrons. and forming a magnetic field in a direction perpendicular to the target surface,
A method for manufacturing a magnetic thin film, comprising forming the magnetic thin film on the substrate disposed on a side of the space so as to face the space by sputtering the facing target.
直磁化膜である請求項第１項記載の磁性薄膜の製造方法
。2. 2. The method of manufacturing a magnetic thin film according to claim 1, wherein the magnetic thin film is a permalloy thin film or a CoCr alloy perpendicularly magnetized film.
磁化膜、保護膜を順次積層した磁気記録媒体の製造方法
において、ターゲット面が空間を隔てて平行に対面する
一対のターゲットからなる対向ターゲットを陰極とし、
夫々のターゲットの周辺部に電子を反撥する反射電極を
設けると共に前記ターゲット面に垂直な方向の磁界を形
成し、前記空間の側方で前記空間に対面するように配置
した前記基板上に前記対向ターゲットのスパッタリング
により前記軟磁性膜，垂直磁化膜及び保護膜を形成する
ことを特徴とする磁気記録媒体の製造方法。3. In a method for manufacturing a magnetic recording medium in which a perpendicularly magnetized film and a protective film or a soft magnetic film, a perpendicularly magnetized film, and a protective film are sequentially laminated on a substrate, an opposing method consisting of a pair of targets whose target surfaces face each other in parallel with a space between them. The target is the cathode,
A reflective electrode for repelling electrons is provided around the periphery of each target, and a magnetic field is formed in a direction perpendicular to the target surface. A method of manufacturing a magnetic recording medium, characterized in that the soft magnetic film, perpendicular magnetization film, and protective film are formed by sputtering a target.
膜がＣｏ−Ｃｒ合金膜である請求項第３項記載の磁気記
録媒体の製造方法。4. 4. The method of manufacturing a magnetic recording medium according to claim 3, wherein the soft magnetic film is a permalloy film, and the perpendicularly magnetized film is a Co-Cr alloy film.
ーボン膜である請求項第３項又は第４項記載の磁気記録
媒体の製造方法。5. 5. The method of manufacturing a magnetic recording medium according to claim 3, wherein the protective film is a cobalt oxide film or a graphite carbon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63090406A JP2595031B2 (en) | 1988-04-14 | 1988-04-14 | Manufacturing method of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63090406A JP2595031B2 (en) | 1988-04-14 | 1988-04-14 | Manufacturing method of magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01262610A true JPH01262610A (en) | 1989-10-19 |
| JP2595031B2 JP2595031B2 (en) | 1997-03-26 |
Family
ID=13997703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63090406A Expired - Lifetime JP2595031B2 (en) | 1988-04-14 | 1988-04-14 | Manufacturing method of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2595031B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001335926A (en) * | 2000-05-24 | 2001-12-07 | Nippon Synthetic Chem Ind Co Ltd:The | Method for producing gas barriable film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575827A (en) * | 1991-09-12 | 1993-03-26 | Nec Corp | Facsimile equipment |
-
1988
- 1988-04-14 JP JP63090406A patent/JP2595031B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575827A (en) * | 1991-09-12 | 1993-03-26 | Nec Corp | Facsimile equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001335926A (en) * | 2000-05-24 | 2001-12-07 | Nippon Synthetic Chem Ind Co Ltd:The | Method for producing gas barriable film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2595031B2 (en) | 1997-03-26 |
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