JPH01244402A - Production of optical film - Google Patents
Production of optical filmInfo
- Publication number
- JPH01244402A JPH01244402A JP63072826A JP7282688A JPH01244402A JP H01244402 A JPH01244402 A JP H01244402A JP 63072826 A JP63072826 A JP 63072826A JP 7282688 A JP7282688 A JP 7282688A JP H01244402 A JPH01244402 A JP H01244402A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- film
- silicon
- oxygen ions
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012788 optical film Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 21
- -1 Oxygen ions Chemical class 0.000 abstract description 15
- 230000003287 optical effect Effects 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
- Optical Filters (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば光学フィルタ等の光学素子に用いら
れる光学膜の作製方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing an optical film used for an optical element such as an optical filter.
第３図は光学フィルタの一例を示すものであり、石英ガ
ラス基板４の表面に、五酸化タンタル（Ｔ ａ ２０
ｓ ）膜６、二酸化ケイ素（ＳｉＯｚ ）膜７およびフ
ン化マグネシウム（ＭｇＦ２）膜８を積層して、これら
の光学膜６〜８の組合せによって所望のフィルタ特性を
得るようにしている。FIG. 3 shows an example of an optical filter, in which tantalum pentoxide (T a 20
s) A film 6, a silicon dioxide (SiOz) film 7, and a magnesium fluoride (MgF2) film 8 are laminated to obtain desired filter characteristics by a combination of these optical films 6-8.
その場合、上記のような光学膜６〜８は、従来は、抵抗
加熱や電子ヒーム法、あるいはスパッタ法等による真空
蒸着によって作製していた。In that case, the optical films 6 to 8 as described above have conventionally been produced by vacuum deposition using resistance heating, an electron beam method, a sputtering method, or the like.
［発明が解決しようとする課題］
ところが、二酸化ケイ素膜７について言えば、真空蒸着
で二酸化ケイ素を基材上に堆積させる従来の方法では、
二酸化ケイ素の結晶性が悪くて組成が不安定になる等の
理由によって、その光学的特性が熱に対して不安定にな
るという問題があった。[Problems to be Solved by the Invention] However, when it comes to the silicon dioxide film 7, the conventional method of depositing silicon dioxide on a base material by vacuum evaporation has the following problems:
There has been a problem in that the optical properties of silicon dioxide are unstable against heat due to reasons such as poor crystallinity and unstable composition.
特に、上記のような光学フィルタを他の光学素子に接着
する際にその工程において二酸化ケイ素膜７が加熱され
る等の熱履歴を受ける場合があり、そのような場合、二
酸化ケイ素膜７の光の透過波長域が加熱の前後で大きく
シフ１−するという問題があった。In particular, when adhering the above-mentioned optical filter to another optical element, the silicon dioxide film 7 may be subjected to thermal history such as heating during that process, and in such a case, the light of the silicon dioxide film 7 There was a problem in that the transmission wavelength range of 1- shifted significantly before and after heating.
そこでこの発明は、二酸化ケイ素から成るものであって
、光学的特性が安定しており、熱履歴を受けたような場
合でも光の透過波長域のシフト量が少ない光学膜の作製
方法を提供することを目的とする。Therefore, the present invention provides a method for producing an optical film that is made of silicon dioxide, has stable optical properties, and exhibits a small shift in the light transmission wavelength range even when subjected to thermal history. The purpose is to
この発明の方法は、真空中で基材に対して、二酸化ケイ
素およびケイ素の少なくとも一方の蒸着と、運動エネル
ギーを付与した酸素粒子の輸送とを行うことによって、
基材上に二酸化ケイ素から成る光学膜を作製することを
特徴とする。The method of the present invention involves depositing at least one of silicon dioxide and silicon on a substrate in vacuum, and transporting oxygen particles imparted with kinetic energy.
It is characterized by producing an optical film made of silicon dioxide on a base material.
上記方法によれば、二酸化ケイ素から成るものであって
、光学的特性が安定しており、熱履歴を受けたような場
合でも光の透過波長域のシフト量が少ない光学膜が得ら
れる。According to the above method, it is possible to obtain an optical film that is made of silicon dioxide, has stable optical properties, and exhibits a small shift in the light transmission wavelength range even when subjected to thermal history.
これは、輸送酸素粒子の運動エネルギーによって、基材
上に堆積される二酸化ケイ素の結晶化が促進され、それ
によってその結晶性が単なる真空１蒸着による場合より
も向上して組成が安定化するからであると考えられる。This is because the kinetic energy of the transported oxygen particles promotes the crystallization of silicon dioxide deposited on the substrate, thereby improving its crystallinity and stabilizing its composition compared to the case of simple single vacuum deposition. It is thought that.
第１図は、実施例に使用した装置の一例を示す概略図で
ある。FIG. 1 is a schematic diagram showing an example of the apparatus used in the example.
真空容器（図示省略）内に設けたボルダ１ｏに、基材の
一例として、前述したような石英ガラス基板４上に真空
蒸着等の既存の技術を用いて五酸化タンタル膜６を形成
したものを装着した。As an example of a base material, a tantalum pentoxide film 6 is formed on a quartz glass substrate 4 as described above using an existing technique such as vacuum deposition on a boulder 1o provided in a vacuum container (not shown). I installed it.
そして、真空容器内を例えば１０−５〜１０−’Ｔｏｒ
ｒ程度に排気した後、五酸化タンタル膜６の表面に対し
て、蒸発＃（例えば電子ビーム蒸発源）１２によってこ
の例では二酸化ケイ素１４を蒸着させるのと同時に、イ
オン源（例えばパケット型イオン源）１８によって酸素
イオン２０を加速して照射し、それによって五酸化タン
タル膜６の表面に二酸化ケイ素膜（二酸化ケイ素から成
る光学膜）７ａを作製した。また比較のために、酸素イ
オン２０を照射せずに真空蒸着のみによっても二酸化ケ
イ素膜７ａを作製した。１６は蒸着膜の膜厚モニタであ
る。Then, the inside of the vacuum container is heated to, for example, 10-5 to 10-'Tor.
After evacuation to a temperature of about ) 18 to accelerate and irradiate oxygen ions 20, thereby producing a silicon dioxide film (optical film made of silicon dioxide) 7a on the surface of the tantalum pentoxide film 6. For comparison, a silicon dioxide film 7a was also produced only by vacuum deposition without irradiation with oxygen ions 20. 16 is a monitor for the thickness of the deposited film.
上記の場合、照射イオンに酸素イオン２０を用いるのは
、それが二酸化ケイ素の構成元素の−っであって二酸化
ケイ素膜７ａ内への不純物混入の問題が起こらないから
である。In the above case, the reason why oxygen ions 20 are used as the irradiation ions is that they are one of the constituent elements of silicon dioxide and do not cause the problem of impurities being mixed into the silicon dioxide film 7a.
上記のようにして各種条件下で作製した二酸化ケイ素７
ａ膜の加熱前後の光の透過波長域のシフト量を第２図に
示す。加熱は、前述したような接着工程における条件に
近い５００°Ｃ１３０分間とした。また同図の横軸は、
基材に対する酸素イオン／二酸化ケイ素（０／ Ｓ ｉ
Ｏ□）の輸送比を示す。Silicon dioxide 7 produced under various conditions as described above
FIG. 2 shows the amount of shift in the light transmission wavelength range before and after heating the a-film. Heating was carried out at 500° C. for 130 minutes, which is close to the conditions in the bonding process as described above. Also, the horizontal axis of the same figure is
Oxygen ions/silicon dioxide (0/S i
The transport ratio of O□) is shown.
この図からも分かるように、従来法である真空蒸着のみ
の場合は、加熱の前後において透過波長域が約２６ｎｍ
もシフトしたのに対して、酸素イオン２０の照射を併用
した場合は、シフト量が大幅に減少した。これは、照射
酸素イオン２０の運動エネルギーによって二酸化ケイ素
の結晶化が促進され、それによってその結晶性が単なる
真空蒸着による場合よりも向上して組成が安定化するか
らであると考えられる。特に、酸素イオン２０のエネル
ギーが２００ｅＶ、輸送比が５０％の場合はシフトは殆
ど無かった。As can be seen from this figure, in the case of only vacuum evaporation, which is the conventional method, the transmission wavelength range is approximately 26 nm before and after heating.
However, when irradiation with 20 oxygen ions was also used, the amount of shift was significantly reduced. This is considered to be because the kinetic energy of the irradiated oxygen ions 20 promotes the crystallization of silicon dioxide, thereby improving its crystallinity and stabilizing its composition compared to the case of mere vacuum evaporation. In particular, when the energy of the oxygen ions 20 was 200 eV and the transport ratio was 50%, there was almost no shift.
尚、基材に対しては、二酸化ケイ素１４の代わりに、あ
るいはそれと共に、ケイ素を蒸着させても良く、その場
合は蒸着ケイ素と照射酸素イオン２０とが化合して二酸
化ケイ素が作製されると共に、照射酸素イオン２０の運
動エネルギーによって二酸化ケイ素の前述したような結
晶性改善が行われる。In addition, silicon may be vapor-deposited on the base material instead of or together with the silicon dioxide 14, in which case the vapor-deposited silicon and the irradiated oxygen ions 20 are combined to produce silicon dioxide. The kinetic energy of the irradiated oxygen ions 20 improves the crystallinity of silicon dioxide as described above.
また、運動エネルギーを付与した酸素粒子を基材に輸送
する方法としては、上記のようにイオン源１８を用いて
酸素イオン２０を電気的に加速して照射する方法の他に
、そのようにして加速した酸素イオン２０を中性粒子化
して照射する方法、酸素を高周波放電等によってプラズ
マ化してそれを基材のバイアス電圧で引き込む方法等が
採り得る。In addition to the method of electrically accelerating and irradiating oxygen ions 20 using the ion source 18 as described above, there are other methods for transporting oxygen particles to which kinetic energy has been imparted to the base material. Possible methods include a method in which accelerated oxygen ions 20 are turned into neutral particles and irradiated, a method in which oxygen is turned into plasma by high-frequency discharge, etc., and the plasma is drawn in using a bias voltage of the base material.
また、酸素粒子の輸送は、二酸化ケイ素等の蒸着と同時
でも交互でも良く、また連続的でも間歇的でも良い。Further, the transport of oxygen particles may be carried out simultaneously or alternately with the vapor deposition of silicon dioxide, etc., and may be carried out continuously or intermittently.
また、基材に対する酸素粒子／二酸化ケイ素または酸素
粒子／ケイ素の輸送比は、上記実施例からも分かるよう
に、零以外であれば特に限定されない。Moreover, the transport ratio of oxygen particles/silicon dioxide or oxygen particles/silicon to the base material is not particularly limited as long as it is other than zero, as can be seen from the above examples.
また、酸素粒子のエネルギーも、に記実施例からも分る
ように特定のものに限定されないが、二酸化ケイ素は絶
縁物であるため、膜作製時の）Ｉり表面における帯電を
軽減する観点から、］、 Ｋ ｅ Ｖ程度以下にするの
が好ましい。In addition, the energy of the oxygen particles is not limited to a specific one, as can be seen from the examples described below, but since silicon dioxide is an insulator, from the viewpoint of reducing the electrical charge on the surface (during film fabrication), , ], K e It is preferable to set it to about V or less.
以上のようにこの発明によれば、二酸化ケイ素から成る
ものであっ一ζ、光学的特性が安定しており、熱履歴を
受けたような場合でも光の透過波長域のシフ１〜量が少
ない光学膜が得られる。As described above, according to the present invention, it is made of silicon dioxide, has stable optical properties, and has a small amount of shift in the light transmission wavelength range even when subjected to thermal history. An optical film is obtained.
第１図は、実施例に使用した装置の一例を示す概略図で
ある。第２図は、各種条件］；−で作製した二酸化ケイ
素膜の加熱前後における光の透過波長域のシフト量を示
す図である。第３図は、光学フィルタの一例を示す断面
図である。
４・・・石英ガラス基板、６０９．五酸化タンタル膜、
７ａ３０．二酸化ケイ素膜、１２・・・蒸発源、１４・
・・二酸化ケイ素、１８・・・イオン源、２０１３．酸
素イオン。FIG. 1 is a schematic diagram showing an example of the apparatus used in the example. FIG. 2 is a diagram showing the amount of shift in the light transmission wavelength range before and after heating silicon dioxide films produced under various conditions. FIG. 3 is a sectional view showing an example of an optical filter. 4...quartz glass substrate, 609. tantalum pentoxide film,
7a30. silicon dioxide film, 12... evaporation source, 14.
...Silicon dioxide, 18...Ion source, 2013. oxygen ion.
Claims (1)
素の少なくとも一方の蒸着と、運動エネルギーを付与し
た酸素粒子の輸送とを行うことによって、基材上に二酸
化ケイ素から成る光学膜を作製することを特徴とする光
学膜の作製方法。(1) An optical film made of silicon dioxide is produced on a substrate by vapor-depositing at least one of silicon dioxide and silicon and transporting oxygen particles imparted with kinetic energy onto the substrate in vacuum. A method for producing an optical film, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63072826A JPH01244402A (en) | 1988-03-25 | 1988-03-25 | Production of optical film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63072826A JPH01244402A (en) | 1988-03-25 | 1988-03-25 | Production of optical film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01244402A true JPH01244402A (en) | 1989-09-28 |
Family
ID=13500609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63072826A Pending JPH01244402A (en) | 1988-03-25 | 1988-03-25 | Production of optical film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01244402A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03202461A (en) * | 1989-12-29 | 1991-09-04 | Nissin Electric Co Ltd | Formation of highly insulating thin silicon oxide film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489983A (en) * | 1977-12-28 | 1979-07-17 | Toshiba Corp | Device and method for vacuum deposition compound |
| JPS5565239A (en) * | 1978-11-10 | 1980-05-16 | Nippon Kogaku Kk <Nikon> | Method of forming film of titanium oxide on plastic base plate |
| JPS5974279A (en) * | 1982-10-21 | 1984-04-26 | Toyota Central Res & Dev Lab Inc | Method and device for coating thin metallic film by vapor deposition |
| JPS61104070A (en) * | 1984-10-25 | 1986-05-22 | Toshiba Corp | Formation of thin film |
| JPS6210269A (en) * | 1985-07-09 | 1987-01-19 | Asahi Glass Co Ltd | Vacuum evaporation device and production of thin film |
-
1988
- 1988-03-25 JP JP63072826A patent/JPH01244402A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489983A (en) * | 1977-12-28 | 1979-07-17 | Toshiba Corp | Device and method for vacuum deposition compound |
| JPS5565239A (en) * | 1978-11-10 | 1980-05-16 | Nippon Kogaku Kk <Nikon> | Method of forming film of titanium oxide on plastic base plate |
| JPS5974279A (en) * | 1982-10-21 | 1984-04-26 | Toyota Central Res & Dev Lab Inc | Method and device for coating thin metallic film by vapor deposition |
| JPS61104070A (en) * | 1984-10-25 | 1986-05-22 | Toshiba Corp | Formation of thin film |
| JPS6210269A (en) * | 1985-07-09 | 1987-01-19 | Asahi Glass Co Ltd | Vacuum evaporation device and production of thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03202461A (en) * | 1989-12-29 | 1991-09-04 | Nissin Electric Co Ltd | Formation of highly insulating thin silicon oxide film |
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