JPH01239704A - Ceramic component with high dielectric constant - Google Patents
Ceramic component with high dielectric constantInfo
- Publication number
- JPH01239704A JPH01239704A JP63066623A JP6662388A JPH01239704A JP H01239704 A JPH01239704 A JP H01239704A JP 63066623 A JP63066623 A JP 63066623A JP 6662388 A JP6662388 A JP 6662388A JP H01239704 A JPH01239704 A JP H01239704A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- high dielectric
- component
- batio3
- synthesized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007791 liquid phase Substances 0.000 claims abstract description 6
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 16
- 239000003985 ceramic capacitor Substances 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010405 reoxidation reaction Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 238000010532 solid phase synthesis reaction Methods 0.000 description 6
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000975 co-precipitation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010252 TiO3 Inorganic materials 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- CPUJSIVIXCTVEI-UHFFFAOYSA-N barium(2+);propan-2-olate Chemical compound [Ba+2].CC(C)[O-].CC(C)[O-] CPUJSIVIXCTVEI-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子機器に利用されるコンデンサ用の高誘電率
磁器組成物、さらには還元再酸化型半導体磁器コンデン
サとなシうる高誘電率磁器組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a high dielectric constant ceramic composition for capacitors used in electronic equipment, and furthermore, a high dielectric constant ceramic composition that can be used as a reduction and reoxidation type semiconductor ceramic capacitor. It is related to.
従来の技術
セラミックコンデンサ用高誘電率磁器組成物として、チ
タン酸バリウムＢａＴｉＯ３を主体とするものが多く知
られている。ＢａＴｉＯ３はキュリー点が１２０°Ｃ付
近にあるため、室温付近では誘電率が低く、キュリー点
を下げて室温付近の誘電率を上げるために、５ｒＴｉ０
３ 、 ＣｊａＳｎ０３ 、 Ｂａ５ｎｏ５ 。BACKGROUND OF THE INVENTION Many high dielectric constant ceramic compositions for ceramic capacitors are known, which are mainly composed of barium titanate (BaTiO3). BaTiO3 has a Curie point near 120°C, so its dielectric constant is low near room temperature.In order to lower the Curie point and increase the permittivity near room temperature, 5rTi0
3, CjaSn03, Ba5no5.
ＢａＺｒ０３等のシフターが添加されていた。さらにシ
フターとして希土類元素酸化物（希土類はＮｄ。A shifter such as BaZr03 was added. Furthermore, a rare earth element oxide (the rare earth element is Nd) is used as a shifter.
Ｃａ 、 Ｌａ 、 Ｐｒ 、 Ｓｍ 、 Ｅｕ 、
Ｇ４およびＤ７）を用いた場合、グレインサイズ１〜２
μｍの緻密で高誘電率の磁器が得られるのみならず、還
元雰囲気中で熱処理することにより容易に酸素イオン空
孔ができ、還元再酸化型の半導体磁器コンデンサが得ら
れることが知られている。（例えば、特開昭４８−６７
７９７号公報、特開昭５８−４８９０８号公報参照）
発明が解決しようとする課題
しかし、最近コンデンサの小形大容量化がさらに強く要
望されるに至シ、構造上小形大容量化が実現できる積層
磁器コンデンサや還元再酸化型の半導体磁器コンデンサ
においても、誘電体の誘電率をさらに向上させる必要が
あシ、このため磁器の組成のみならず原料の吟味も必要
となってきている。Ca, La, Pr, Sm, Eu,
G4 and D7), grain size 1-2
It is known that not only is it possible to obtain porcelain with micrometer density and high dielectric constant, but also oxygen ion vacancies are easily created by heat treatment in a reducing atmosphere, resulting in a reduction-reoxidation type semiconductor ceramic capacitor. . (For example, JP-A-48-67
Problems to be Solved by the Invention However, recently there has been a strong demand for capacitors to be smaller and have larger capacities. In ceramic capacitors and reduction-reoxidation type semiconductor ceramic capacitors, it is necessary to further improve the dielectric constant of the dielectric material, and for this reason, it has become necessary to carefully examine not only the composition of the ceramic but also the raw material.
本発明はかかる点に鑑みてなされたもので、積層磁器コ
ンデンサや還元再酸化型の半導体磁器コンデンサに利用
できる高誘電率磁器組成物を提供することを目的とする
ものである。The present invention has been made in view of the above, and an object of the present invention is to provide a high dielectric constant ceramic composition that can be used in laminated ceramic capacitors and reduction-reoxidation type semiconductor ceramic capacitors.
課題を解決するための手段
上記課題を解決するため本発明は、液相法で合成した高
純度ＢａＴｉＯ３を用いて、ＢａＴｉＯ３７９，０〜９
４．０モルチ、希土類元素酸化物（Ｌｎ−酸化物）３．
０〜６．０モルチ（ただしＬｎはＮｄ、Ｃｏ、Ｌａ、Ｐ
ｒ。Means for Solving the Problems In order to solve the above problems, the present invention uses high purity BaTiO3 synthesized by a liquid phase method to produce BaTiO379,0-9.
4.0 molti, rare earth element oxide (Ln-oxide)3.
0 to 6.0 molti (Ln is Nd, Co, La, P
r.
Ｓｍ 、 Ｅｕ 、 ＧｄおよびＤｙ のうち少なくと
も１つ）、ＴｉＯ２３，０〜１６．０モルチからなる組
成物に対して、さらにＭｎＯ２を０〜２．０重量％およ
び５ｉ０２を０〜１．０重量％含有してなる高誘電率磁
器組成物を提供するものである。At least one of Sm, Eu, Gd and Dy), TiO23,0 to 16.0% by weight, and further 0 to 2.0% by weight of MnO2 and 0 to 1.0% by weight of 5i02. The object of the present invention is to provide a high dielectric constant ceramic composition comprising:
作用
従来のＢａＣＯ３とＴｉＯ□の粉末よシ固相法で合成さ
れるＢａＴｉＯ３に比べ、共沈法やアルコキシド等のよ
うに液相法で合成されたＢａＴｉＯ３は、溶液中でイオ
ンの状態で混合されるため、均質で純度が高く粒径の細
かい粉末が得られる。このような液相法で合成したＢａ
ＴｉＯ３を用いて、ＢａＴｉ０ ｓ−希土類元素酸化物
一丁１０２系磁器組成物としたときに、反応性の向上、
焼結体の緻密化、不純物の低減等の効果により、従来の
固相法で合成したＢａＴｉＯ３を用いた場合よシ、誘電
率が大きくなることを見い出した。Function Compared to BaTiO3, which is synthesized by the conventional solid phase method using powders of BaCO3 and TiO□, BaTiO3 synthesized by liquid phase methods such as coprecipitation method or alkoxide is mixed in an ionic state in solution. As a result, a homogeneous, highly pure powder with fine particle size can be obtained. Ba synthesized by such a liquid phase method
When TiO3 is used to form a BaTi0 s-rare earth element oxide 102 series ceramic composition, reactivity is improved,
It has been found that due to the effects of densification of the sintered body, reduction of impurities, etc., the dielectric constant becomes higher than when BaTiO3 synthesized by the conventional solid phase method is used.
実施例 以下、実施例をあげて本発明につき詳細に説明する。Example Hereinafter, the present invention will be described in detail with reference to Examples.
（実施例１）
まず、液相法の１つである共沈法で次のようにＢａＴｉ
Ｏ３を合成した。Ｔ１Ｃｄ４水溶液とＢａＣｌ２水溶液
をＢａ ： Ｔｉ＝１ ： １になるように調整、混合
し、この混合溶液を加熱したシュウ酸溶液にゆっくシ滴
下し、シェラ酸バリウムチタニール（ＢａＴｉＯ（０２
０４）−ａＨ２０）の沈殿を得、これを洗浄−ｐ過し、
乾燥させ、９５０〜１１００′Ｃで４時間仮焼してＢａ
ＴｉＯ３（純度９９．９％）を合成した。これと市販の
工業用ＢａＴｉＯ３（固相法で合成したもの。純度９８
チ）、ＴｉＯ２（純度９６．９チ）、試薬特級Ｎｄ２Ｏ
３、０ｅ０２ 、 Ｌａ２０Ｂ 、 Ｐｒ６０１１ 、
Ｓｍ２０Ｂ 。(Example 1) First, BaTi was
O3 was synthesized. A T1Cd4 aqueous solution and a BaCl2 aqueous solution were adjusted and mixed so that Ba:Ti=1:1, and this mixed solution was slowly dropped into a heated oxalic acid solution to form barium titanyl chelate (BaTiO(02)).
04)-aH20) was obtained, which was washed and filtered,
Dry and calcinate at 950-1100'C for 4 hours to obtain Ba.
TiO3 (purity 99.9%) was synthesized. This and commercially available industrial BaTiO3 (synthesized by solid phase method. Purity 98
h), TiO2 (purity 96.9ch), reagent special grade Nd2O
3, 0e02, La20B, Pr6011,
Sm20B.
ＩＣｕ ２０３ 、 Ｇｄ２Ｏ３、Ｄｙ２Ｏ３、ＭｎＯ
２、５ｉ０２ （純度はいずれも９９．９％以上）を用
い、目的の組成比になるように配合し、メノウ玉石を用
いたボールミルで混合し乾燥した。次にポリビニルアル
コール水溶液をバインダーとして造粒し・３２メツシユ
パスに整粒し、直径９１１１Ｍ、厚さ０．３６朋の円板
に約１トン／ｄの圧力で成形した。これらの成形体を空
気中で１２８０〜１３２０°Ｃの温度で２時間焼成して
、直径的７．５ｆｆｌ、厚み０．３ ｆｆ１Ｆの円板形
誘電体磁器を得た。次にこの磁器の両面に銀ペースト印
刷し８６０°Ｃで焼付は電極とした。ICu 203, Gd2O3, Dy2O3, MnO
2 and 5i02 (all with purity of 99.9% or higher) were blended to achieve the desired composition ratio, mixed in a ball mill using agate stones, and dried. Next, the granules were granulated using an aqueous polyvinyl alcohol solution as a binder, sized to 32 mesh passes, and molded into a disk having a diameter of 9111M and a thickness of 0.36 mm at a pressure of about 1 ton/d. These molded bodies were fired in air at a temperature of 1280 to 1320°C for 2 hours to obtain a disc-shaped dielectric porcelain having a diameter of 7.5 ffl and a thickness of 0.3 ffl. Next, silver paste was printed on both sides of this porcelain and baked at 860°C to form electrodes.
このようにして作成したコンデンサについて、２０’Ｃ
においてＩ Ｖｒｍｓ １ ｋｌ−１２で測定した誘
電率及び誘電損失（ｔａｎδ）、さらに誘電率が最大と
なる温度（キュリー点）を第１表に示す。Regarding the capacitor made in this way, 20'C
Table 1 shows the dielectric constant and dielectric loss (tan δ) measured at I Vrms 1 kl-12, as well as the temperature at which the dielectric constant becomes maximum (Curie point).
第１表中のＢａＴｉＯ３の覧のΔ印は従来の固相法で合
成したＢａＴｉＯ３を示し、試料番号の覧の合印は本発
明の範囲外の組成物を示す。コンデンサの大容量化を図
るため、室温（２０’Ｃ）で高い誘電率が望まれている
。磁器コンデンサの場合、キュリー点で誘電率が最大と
なυ、温度がキュリー点よシ離れるに従い誘電率が低く
なる。従って、ＢａＴｉ０３の種類を変えた場合、シフ
ターの固溶度合や不純物等によシ同組成にもかかわらず
キュリー点が変わるため、組成を少し変えてキュリー点
を同じにしたうえで２０″Ｃの誘電率の大小を比較しな
くてはならない。試料番号３と４，５と６゜１９と２０
．２４と２５．２８と２９．３０と３１゜３２と３３．
３４と３５．３８と３７，３８と３９゜４１と４２は本
発明と従来法との比較である。共沈法で合成したＢａＴ
ｉＯ３を用いた場合、従来の固相法で合成したＢａＴｉ
０３を用いた場合よシ高誘電率が得られることがわかる
。In Table 1, the Δ mark under BaTiO3 indicates BaTiO3 synthesized by the conventional solid phase method, and the cross mark under sample number indicates a composition outside the scope of the present invention. In order to increase the capacitance of capacitors, a high dielectric constant at room temperature (20'C) is desired. In the case of a magnetic capacitor, the dielectric constant is maximum at the Curie point υ, and the dielectric constant decreases as the temperature moves away from the Curie point. Therefore, if you change the type of BaTi03, the Curie point will change depending on the solid solubility of the shifter, impurities, etc. even though the composition is the same. We must compare the dielectric constants.Sample numbers 3 and 4, 5 and 6゜19 and 20
．． 24 and 25. 28 and 29. 30 and 31° 32 and 33.
34 and 35. 38 and 37, 38 and 39. 41 and 42 are comparisons between the present invention and the conventional method. BaT synthesized by coprecipitation method
When using iO3, BaTi synthesized by conventional solid phase method
It can be seen that a higher dielectric constant can be obtained when using 03.
希土類元素酸化物（Ｌｎ−酸化物）が３．０モルチより
少ない場合は、キュリー点の移動が少なく室温での誘電
率が低く、−δが大きくなる。また、６．０モルチをこ
える場合は、キュリー点の移動が大きく室温での誘電率
が低くなる。ＴｌＯ２を３．０〜１６．０モルチとした
のは、３．０モルチよシ少ない場合、焼結体に針状結晶
の析出量が多くなシ、１５、ｏモルチよシ多くなると誘
電率が低下し、磁器の融着がおこるからである。ＭｎＯ
２の添加は−δの低下および絶縁抵抗の向上に効果があ
るが、２．０重量％をこえると誘電率の低下が大きくな
る。When the amount of rare earth element oxide (Ln-oxide) is less than 3.0 molti, the Curie point moves little, the dielectric constant at room temperature is low, and -δ becomes large. Moreover, when it exceeds 6.0 molti, the Curie point shifts significantly and the dielectric constant at room temperature becomes low. The reason why TlO2 is set to 3.0 to 16.0 mol. This is because the temperature decreases and fusion of the porcelain occurs. MnO
Addition of 2 is effective in lowering -δ and improving insulation resistance, but if it exceeds 2.0% by weight, the dielectric constant decreases significantly.
Ｓｉ２０の添加はＭｎＯ２と同様な効果の他に焼成温度
依存性を少なくする効果があるが、１．０重量％をこえ
ると誘電率の低下が大きくなる。Addition of Si20 has the same effect as MnO2 and also has the effect of reducing firing temperature dependence, but if it exceeds 1.0% by weight, the dielectric constant decreases significantly.
（実施例２ン
第１表の組成物について、空気中で１２８０〜１３２０
°Ｃで２時間焼成し、これを還元性雰囲気（Ｎ２ ：
Ｎ２ ＝９５ ： ５ ）中で９６０〜１１５０′Ｃで
４時間還元処理し半導体磁器を得た。この半導体磁器を
空気中で９００〜１０５０℃で４時間酸化処理して、両
面に銀ペーストを印刷し８５０’Ｃで焼付は電極を形成
し、還元再酸化型半導体磁器コンデンサを得た。(Example 2) For the compositions in Table 1, 1280-1320 in air
Calcinate at °C for 2 hours and place in a reducing atmosphere (N2:
Semiconductor porcelain was obtained by reduction treatment at 960 to 1150'C for 4 hours in N2 = 95:5). This semiconductor ceramic was oxidized in air at 900 to 1050°C for 4 hours, silver paste was printed on both sides and baked at 850'C to form electrodes, thereby obtaining a reduction and reoxidation type semiconductor ceramic capacitor.
このようにして作成したコンデンサについて、２０℃に
おいてｏ、１Ｖｒｍｓ 、 １ｋ）４ｚ で単位面積
当シの容量Ｃ（μｌ’／ｄ） 、誘電損失（ｔａｎδ）
、絶縁抵抗ＩＲ（Ω）、破壊電圧ＢＤＶ（Ｖ）を測定し
た。絶縁抵抗はＤＯ２５Ｖ印加で測定し、破壊電圧はＤ
Ｃ外圧破壊方式を用いた。なお、単位面積当シの容量お
よび破壊電圧は、還元温度、再酸化温度によって変化す
るため、破壊電圧がおよそ６００ｖになるように条件を
設定して、単位面積ａｂの容量で比較した。結果を第２
表に示す。For the capacitor created in this way, the capacitance per unit area C (μl'/d) and dielectric loss (tan δ) at 20°C, 1Vrms, 1k)4z
, insulation resistance IR (Ω), and breakdown voltage BDV (V) were measured. Insulation resistance was measured by applying DO25V, and breakdown voltage was D
C external pressure destruction method was used. Note that since the capacitance and breakdown voltage per unit area vary depending on the reduction temperature and reoxidation temperature, conditions were set so that the breakdown voltage was approximately 600 V, and the capacitance per unit area ab was compared. Second result
Shown in the table.
（以下余白）
このように、共沈法で合成したＢａＴｉＯ３を用いた場
合、従来の固相法で合成したＢａＴｉＯ３を用いた場合
よシ、面積容量の大きな還元再酸化型の半導体磁器コン
デンサが得られることがわかる。(Left below) In this way, when BaTiO3 synthesized by the coprecipitation method is used, a reduction-reoxidation type semiconductor ceramic capacitor with a larger areal capacitance can be obtained than when BaTiO3 synthesized by the conventional solid phase method is used. I know that it will happen.
なお、本実施例では液相法の１つである共沈法で合成し
たＢａＴｉＯ３を用いたが、Ｔ１とＢａのアルコキシド
（チタニウムテトライソプロポキシドＴｉ（（ＯＨ，）
２０ＨＯ）４．バリウムビスイソプロポキシド Ｂａ（
ＯＣ５Ｈ７）２ ） を加水分解して得たＢａＴｉＯ
３でも同様な良い特性が確認できた。In this example, BaTiO3 synthesized by the coprecipitation method, which is one of the liquid phase methods, was used, but the alkoxide of T1 and Ba (titanium tetraisopropoxide Ti((OH,)
20HO)4. Barium bisisopropoxide Ba (
BaTiO obtained by hydrolyzing OC5H7)2)
Similar good characteristics were confirmed for Sample No. 3 as well.
発明の効果
以上のように本発明の組成物によれば、積層磁器コンデ
ンサや還元再酸化型の半導体磁器コンデンサ用の高誘電
率磁器組成物が得られ、その実用的価値は極めて有用で
ある。Effects of the Invention As described above, according to the composition of the present invention, a high dielectric constant ceramic composition for use in laminated ceramic capacitors and reduction-reoxidation type semiconductor ceramic capacitors can be obtained, and its practical value is extremely useful.
Claims (1)
ＴｉＯ＿３７９．０〜９４．０モル％、希土類元素酸化
物（Ｌｎ−酸化物）３．０〜６．０モル％（ただし、Ｌ
ｎはＮｄ，Ｃｅ，Ｌａ，Ｐｒ，Ｓｍ，Ｅｕ，Ｇｄ，およ
びＤｙのうち少なくとも１つ）、ＴｉＯ＿２３．０〜１
５．０モル％からなる組成物に対して、さらにＭｎＯ＿
２を０〜２．０重量％およびＳｉＯ＿２を０〜１．０重
量％含有してなる高誘電率磁器組成物。Using high purity BaTiO_3 synthesized by liquid phase method, Ba
TiO_379.0-94.0 mol%, rare earth element oxide (Ln-oxide) 3.0-6.0 mol% (however, L
n is at least one of Nd, Ce, La, Pr, Sm, Eu, Gd, and Dy), TiO_23.0-1
For the composition consisting of 5.0 mol%, MnO_
A high dielectric constant ceramic composition containing 0 to 2.0% by weight of SiO_2 and 0 to 1.0% by weight of SiO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63066623A JPH01239704A (en) | 1988-03-18 | 1988-03-18 | Ceramic component with high dielectric constant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63066623A JPH01239704A (en) | 1988-03-18 | 1988-03-18 | Ceramic component with high dielectric constant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01239704A true JPH01239704A (en) | 1989-09-25 |
Family
ID=13321198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63066623A Pending JPH01239704A (en) | 1988-03-18 | 1988-03-18 | Ceramic component with high dielectric constant |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01239704A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093763A1 (en) * | 2004-03-29 | 2005-10-06 | Nippon Chemical Industrial Co., Ltd. | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| JP2008235088A (en) * | 2007-03-22 | 2008-10-02 | Murata Mfg Co Ltd | Dielectric thin film, dielectric thin film capacitor, and manufacturing method of dielectric thin film capacitor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848908A (en) * | 1981-09-18 | 1983-03-23 | 松下電器産業株式会社 | Surface dielectric layer type semiconductor porcelain composition and method of producing same |
| JPS6221758A (en) * | 1985-07-22 | 1987-01-30 | 平野 真一 | Manufacture of ceramic dielectric for high frequency |
-
1988
- 1988-03-18 JP JP63066623A patent/JPH01239704A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848908A (en) * | 1981-09-18 | 1983-03-23 | 松下電器産業株式会社 | Surface dielectric layer type semiconductor porcelain composition and method of producing same |
| JPS6221758A (en) * | 1985-07-22 | 1987-01-30 | 平野 真一 | Manufacture of ceramic dielectric for high frequency |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093763A1 (en) * | 2004-03-29 | 2005-10-06 | Nippon Chemical Industrial Co., Ltd. | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| JP4747091B2 (en) * | 2004-03-29 | 2011-08-10 | 日本化学工業株式会社 | Composite dielectric material |
| JP2008235088A (en) * | 2007-03-22 | 2008-10-02 | Murata Mfg Co Ltd | Dielectric thin film, dielectric thin film capacitor, and manufacturing method of dielectric thin film capacitor |
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