JPH01185176A - 静電吸着を用いた処理方法 - Google Patents
静電吸着を用いた処理方法Info
- Publication number
- JPH01185176A JPH01185176A JP63006767A JP676788A JPH01185176A JP H01185176 A JPH01185176 A JP H01185176A JP 63006767 A JP63006767 A JP 63006767A JP 676788 A JP676788 A JP 676788A JP H01185176 A JPH01185176 A JP H01185176A
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- 238000003672 processing method Methods 0.000 title claims description 9
- 238000001179 sorption measurement Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004380 ashing Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 29
- 239000000919 ceramic Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 etc.) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔概 要〕
本発明は静電吸着を用いた処理方法に係り、特に半導体
ウェハ温度制御を静電吸着を用いて行なう方法に関し、 高温、例えば２００〜３００°Ｃ程度の温度で静電チャ
ックを用いてもチャックの絶縁物が割れない処理方法を
提供することを目的とし、 真空中で静電チャックにより半導体基板を静電吸着する
処理方法において、前記静電チャックに前記半導体基板
を吸着させる前に、あらかじめ該半導体基板を加熱ある
いは冷却し、該半導体基板と静電チャックの温度差を小
さ（することを構成とする。
ウェハ温度制御を静電吸着を用いて行なう方法に関し、 高温、例えば２００〜３００°Ｃ程度の温度で静電チャ
ックを用いてもチャックの絶縁物が割れない処理方法を
提供することを目的とし、 真空中で静電チャックにより半導体基板を静電吸着する
処理方法において、前記静電チャックに前記半導体基板
を吸着させる前に、あらかじめ該半導体基板を加熱ある
いは冷却し、該半導体基板と静電チャックの温度差を小
さ（することを構成とする。
本発明は静電吸着を用いた処理方法に係り、特に半導体
ウェハ温度制御を静電吸着を用いて行なう方法に関する
。
ウェハ温度制御を静電吸着を用いて行なう方法に関する
。
半導体製造プロセスでは真空装置が多用されているが、
この際真空中で半導体素子基板（以下ウェハと記す）を
吸着保持できる静電チャックがゴミ対策等のために垂直
又は下向に保持したり、電子ビーム（ＥＢ）、Ｘ線露光
のためウェハの固定、平坦化したり、またエツチング、
デポジションのためのウェハの温度制御等積々の用途に
用いられている（特公昭５７−４４７４７号公報）。
この際真空中で半導体素子基板（以下ウェハと記す）を
吸着保持できる静電チャックがゴミ対策等のために垂直
又は下向に保持したり、電子ビーム（ＥＢ）、Ｘ線露光
のためウェハの固定、平坦化したり、またエツチング、
デポジションのためのウェハの温度制御等積々の用途に
用いられている（特公昭５７−４４７４７号公報）。
静電チャックは２図及び３図に示すように絶縁物２中に
単数又は複数の電極３を埋め込み電極３と試料（ウェハ
）■又は電極間に直流電圧を印加し、試料と電極間に働
くクーロン力により試料１を吸着するものである。
単数又は複数の電極３を埋め込み電極３と試料（ウェハ
）■又は電極間に直流電圧を印加し、試料と電極間に働
くクーロン力により試料１を吸着するものである。
静電チャックに使用する絶縁物２として第４図に示した
テフロン、ポリイミド（商品名カプトン等）シリコーン
等の樹脂２ａを用いたもの（例えば特開昭５９−６４２
４５号公報）は安価で、製造が容易、しかも軟かいので
ウェハとの密着性が良好で、また温度制御性が良い等の
メリットはあるが摩耗のために寿命が短かく耐熱性の問
題から１５０°Ｃ以上の高温で使用することができない
。これに対して第５図に示すように絶縁物にセラミック
２ｂを用いたもの（例えば特公昭６０−５９１０４号公
報、特開昭６０−２６１３７７号公報）は固く摩滅しに
くく高温でも使用できるというメリットがあるがセラミ
ックは割れやすく、熱衝撃に弱いという問題があった。
テフロン、ポリイミド（商品名カプトン等）シリコーン
等の樹脂２ａを用いたもの（例えば特開昭５９−６４２
４５号公報）は安価で、製造が容易、しかも軟かいので
ウェハとの密着性が良好で、また温度制御性が良い等の
メリットはあるが摩耗のために寿命が短かく耐熱性の問
題から１５０°Ｃ以上の高温で使用することができない
。これに対して第５図に示すように絶縁物にセラミック
２ｂを用いたもの（例えば特公昭６０−５９１０４号公
報、特開昭６０−２６１３７７号公報）は固く摩滅しに
くく高温でも使用できるというメリットがあるがセラミ
ックは割れやすく、熱衝撃に弱いという問題があった。
特にチャックと著しく温度が異なる試料を吸着させた時
にセラミックにクラックが入りやすいことは高温で静電
チャックを用いる場合の問題であった。
にセラミックにクラックが入りやすいことは高温で静電
チャックを用いる場合の問題であった。
本発明は高温、例えば２００〜３００°Ｃ程度の温度で
静電チャックを用いても割れない処理方法を提供するこ
とを目的とする。
静電チャックを用いても割れない処理方法を提供するこ
とを目的とする。
上記課題は本発明によれば真空中で静電チャックを利用
して半導体基板を静電吸着する処理方法において、前記
静電チャックに前記半導体基板を吸着させる前に予め該
半導体基板を加熱あるいは冷却させ該半導体基板と静電
チャックと同程度の温度にしておくことを特徴とする静
電吸着を用いた処理方法によって解決される。特に真空
中では対流がなく、又空気等のガスによる熱伝導がない
ので、試料の温度変化が大気中より少なく上記の加熱又
は冷却操作、を別の場所で行ってから試料を静電チャッ
クまで搬送してよい。
して半導体基板を静電吸着する処理方法において、前記
静電チャックに前記半導体基板を吸着させる前に予め該
半導体基板を加熱あるいは冷却させ該半導体基板と静電
チャックと同程度の温度にしておくことを特徴とする静
電吸着を用いた処理方法によって解決される。特に真空
中では対流がなく、又空気等のガスによる熱伝導がない
ので、試料の温度変化が大気中より少なく上記の加熱又
は冷却操作、を別の場所で行ってから試料を静電チャッ
クまで搬送してよい。
〔作 用］
本発明によれば半導体基板を静電チャックする前に温度
を制御しているので熱衝撃を緩和することができる。
を制御しているので熱衝撃を緩和することができる。
アルミナセラミックを用いた静電チャックで試料と静電
チャックの温度差が１００°Ｃ以下であればセラミック
のクラックは発生しなかった。したがって静電チャック
の寿命を長くすることができた。
チャックの温度差が１００°Ｃ以下であればセラミック
のクラックは発生しなかった。したがって静電チャック
の寿命を長くすることができた。
以下本発明の実施例を図面に基づいて説明する。
第１図は本発明の方法を実施するダウンフローアッシン
グ装置の概略図である。
グ装置の概略図である。
第１図に示したダウンフロー（ダウンストリーム又はア
フターグロー）アッシング装置に静電チャックを適用し
た。ダウンフローエツチングによりＳｉＯ□やＰＳＧ等
エツチングを行なう場合や０２＋Ｎ２ （又はＮ、０．
Ｈ，等）のハロゲンを含まないガスでレジストのダウン
フローアッシングを行なう場合はウェハを１５０〜３０
０°Ｃ程度の温度にする必要がある。従来はウェハと加
熱ステージ上に平置きして処理を行うがウェハの温度制
御が悪く又ゴミの影響を受けやすい。ウェハを下向きに
し、ステージに下から機械的に押付けてもよいが、押付
けのためウェハ表面の一部がおおわれ、その部分が処理
されなくなる。したがって、静電チャックを用いるのが
理想的であるが前記熱衝撃の問題があった。
フターグロー）アッシング装置に静電チャックを適用し
た。ダウンフローエツチングによりＳｉＯ□やＰＳＧ等
エツチングを行なう場合や０２＋Ｎ２ （又はＮ、０．
Ｈ，等）のハロゲンを含まないガスでレジストのダウン
フローアッシングを行なう場合はウェハを１５０〜３０
０°Ｃ程度の温度にする必要がある。従来はウェハと加
熱ステージ上に平置きして処理を行うがウェハの温度制
御が悪く又ゴミの影響を受けやすい。ウェハを下向きに
し、ステージに下から機械的に押付けてもよいが、押付
けのためウェハ表面の一部がおおわれ、その部分が処理
されなくなる。したがって、静電チャックを用いるのが
理想的であるが前記熱衝撃の問題があった。
以下本実施例を工程順に説明する。
■ まず第１図に示したダウンフローアッシング装置で
真空ロードロツタ（図示せず）を通じて膜厚１μのレジ
ストのついたウェハ１を搬送室４の搬送アーム５上に、
表側を下向きにしてのせる（この機械は図示していない
）。
真空ロードロツタ（図示せず）を通じて膜厚１μのレジ
ストのついたウェハ１を搬送室４の搬送アーム５上に、
表側を下向きにしてのせる（この機械は図示していない
）。
■ 搬送アーム５を予備加熱ステージ６の下に動かし該
ステージ６を下げてウェ、ハ１の裏面に接触させ３０秒
間ウェハ１を加熱する。予備加熱ステージ６は約２７０
°Ｃに加熱しておいた。
ステージ６を下げてウェ、ハ１の裏面に接触させ３０秒
間ウェハ１を加熱する。予備加熱ステージ６は約２７０
°Ｃに加熱しておいた。
■ 次に予備加熱ステージ６を上げ搬送アーム５を反応
室ステージ７の下に動かし該ステージ７を下げて静電チ
ャック８に電圧を印加しウェハ１を吸着させる。反応室
ステージ７は２５０°Ｃに加熱されている。
室ステージ７の下に動かし該ステージ７を下げて静電チ
ャック８に電圧を印加しウェハ１を吸着させる。反応室
ステージ７は２５０°Ｃに加熱されている。
■ 反応室ステージ７とヒゲアームを別位置に動かした
後、ステージ７を下げ、反応室１４と搬送室４とを分離
させた後、ガス９（ここでは０２＋Ｎ２）を流しマグネ
トロン１０を発振させてμ波を発生し、プラズマ室１１
にプラズマを作る。
後、ステージ７を下げ、反応室１４と搬送室４とを分離
させた後、ガス９（ここでは０２＋Ｎ２）を流しマグネ
トロン１０を発振させてμ波を発生し、プラズマ室１１
にプラズマを作る。
するとプラズマ室１１でつくられた活性種１３（０原子
と思われる）がウェハ１上に輸送され、ウェハ上のレジ
ストと反応し、レジストを除去する０反応時間は１分で
ある。
と思われる）がウェハ１上に輸送され、ウェハ上のレジ
ストと反応し、レジストを除去する０反応時間は１分で
ある。
■ 反応終了後ステージ７を上げアームをウェハの下に
動かし静電チャック８の電圧を切ってウェハをアーム上
に移す。
動かし静電チャック８の電圧を切ってウェハをアーム上
に移す。
■ アーム上のウェハを真空ロードロックを通じて外部
へ搬送する。
へ搬送する。
このようにして得られた処理において静電チャックのセ
ラミックにはクランクは発生していなかった。第１図で
１２はヒータ、１５は導波管である。
ラミックにはクランクは発生していなかった。第１図で
１２はヒータ、１５は導波管である。
なお上記の実施例でそれぞれのステージとウェハの間に
Ｈｏ等のガスを圧力１０Ｔｏｎ程度導入しウェハとステ
ージ間の熱伝導を良くするといっそう温度制御性がよく
、予備加熱時間も１０秒以下にすることができる。なお
この実施例ではウェハを加熱する場合であるが、冷却す
る場合でも、特に連結した反応室で続々処理をしていく
場合、前の反応室と温度が異なっている場合には本方法
でウェハ温度を静電チャックステージに合わせるのが有
効である。
Ｈｏ等のガスを圧力１０Ｔｏｎ程度導入しウェハとステ
ージ間の熱伝導を良くするといっそう温度制御性がよく
、予備加熱時間も１０秒以下にすることができる。なお
この実施例ではウェハを加熱する場合であるが、冷却す
る場合でも、特に連結した反応室で続々処理をしていく
場合、前の反応室と温度が異なっている場合には本方法
でウェハ温度を静電チャックステージに合わせるのが有
効である。
又反応室は他にもＲＩＥやＲＩＰＥ 、又プラズマＣＶ
Ｄ等ウェハ温度の精密制御が必要な場合にはすべてこの
方法が有効である。
Ｄ等ウェハ温度の精密制御が必要な場合にはすべてこの
方法が有効である。
以上説明したように本発明によれば温度変化の大きい場
合でも静電チャックを用いて処理することが可能となる
。又ウェハを下向きに保持できるので、ゴミの付着が少
なく歩留りが向上する。
合でも静電チャックを用いて処理することが可能となる
。又ウェハを下向きに保持できるので、ゴミの付着が少
なく歩留りが向上する。
第１図は本発明の方法を実施するダウンフローアッシン
グ装置の概略図であり、第２図がら第５図迄は従来の技
術を説明するための静電チャックの図である。 １・・・ウェハ、 ２・・・絶縁物、３・・
・電極、 ４・・・搬送室、５・・・搬送ア
ーム、 、６・・・予備加熱アーム、７・・・反応
室ステージ、 ８・・・静電チャック、９・・・ガス
、 １０・・・マグネトロン、１１・・・プ
ラズマ室、 １２・・・ヒータ、１４・・・反応室
、 １５・・・導波管。
グ装置の概略図であり、第２図がら第５図迄は従来の技
術を説明するための静電チャックの図である。 １・・・ウェハ、 ２・・・絶縁物、３・・
・電極、 ４・・・搬送室、５・・・搬送ア
ーム、 、６・・・予備加熱アーム、７・・・反応
室ステージ、 ８・・・静電チャック、９・・・ガス
、 １０・・・マグネトロン、１１・・・プ
ラズマ室、 １２・・・ヒータ、１４・・・反応室
、 １５・・・導波管。
Claims (1)
- １、真空中で静電チャックにより半導体基板を静電吸着
する処理方法において、前記静電チャックに前記半導体
基板を吸着させる前に、あらかじめ該半導体基板を加熱
あるいは冷却し、該半導体基板と静電チャックの温度差
を小さくすることを特徴とする静電吸着を用いた処理方
法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63006767A JPH01185176A (ja) | 1988-01-18 | 1988-01-18 | 静電吸着を用いた処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63006767A JPH01185176A (ja) | 1988-01-18 | 1988-01-18 | 静電吸着を用いた処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01185176A true JPH01185176A (ja) | 1989-07-24 |
Family
ID=11647328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63006767A Pending JPH01185176A (ja) | 1988-01-18 | 1988-01-18 | 静電吸着を用いた処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01185176A (ja) |
Cited By (198)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| JP2011526062A (ja) * | 2008-06-25 | 2011-09-29 | アクセリス テクノロジーズ， インコーポレイテッド | 低慣性、多軸、多方向に、機械的に走査するイオン注入システム |
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