JPH01184953A - Photoelectric conversion element array for hybrid integration photosensor - Google Patents
Photoelectric conversion element array for hybrid integration photosensorInfo
- Publication number
- JPH01184953A JPH01184953A JP63010145A JP1014588A JPH01184953A JP H01184953 A JPH01184953 A JP H01184953A JP 63010145 A JP63010145 A JP 63010145A JP 1014588 A JP1014588 A JP 1014588A JP H01184953 A JPH01184953 A JP H01184953A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- film
- sensor element
- layer
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 60
- 230000010354 integration Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 abstract description 19
- 229920001721 polyimide Polymers 0.000 abstract description 10
- 239000004642 Polyimide Substances 0.000 abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 50
- 230000000694 effects Effects 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は原稿からの反射光を透明基板の裏面側から受光
する大面積の密着読取り用光電変換素子アレイに好適の
混成集積化光センサ用光電変換素子アレイに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to a hybrid integrated optical sensor suitable for a large-area close-contact reading photoelectric conversion element array that receives reflected light from a document from the back side of a transparent substrate. The present invention relates to a photoelectric conversion element array.
［従来の技術］
従来、ファクシミリ等の画像読取り部を構成する光電変
換手段としては、半導体集積化回路技術により制作した
ＭＯＳ又はＣＯＤ等の１次元センサが一般的に使用され
ている。しかしながら、これらのセンサは結晶シリコン
（Ｓｉ）を使用しているので、制作し得る結晶Ｓｉ基板
の大きさに制約があるため、センサの長尺化が困難であ
る。従って、読み取り可能の原稿幅を拡大させようとす
ると、光電変換素子の密度を高くする必要があり、製造
コストが高くなると共に、性能上も悪影響を及ぼすこと
になる。また、原稿からの画像光は、縮小結像させてセ
ンサ素子部に受光させるので、原稿とセンサとの間に縮
小導光系を配置する必要がある。また、この光路を確保
するためには、装置内に一定容積の空間を設ける必要が
あるため、装置の小型化上不利であると共に、光路性能
を維持するために微妙な調整が必要である。[Prior Art] Conventionally, a one-dimensional sensor such as MOS or COD manufactured using semiconductor integrated circuit technology has been generally used as a photoelectric conversion means constituting an image reading unit of a facsimile machine or the like. However, since these sensors use crystalline silicon (Si), there are restrictions on the size of the crystalline Si substrate that can be produced, making it difficult to make the sensors longer. Therefore, in order to increase the width of a document that can be read, it is necessary to increase the density of photoelectric conversion elements, which increases manufacturing costs and has a negative effect on performance. Furthermore, since the image light from the document is formed into a reduced image and received by the sensor element section, it is necessary to arrange a reduction light guide system between the document and the sensor. In addition, in order to secure this optical path, it is necessary to provide a certain volume of space within the device, which is disadvantageous in terms of miniaturization of the device, and delicate adjustments are required to maintain the optical path performance.
このことから、近時、アモルファスシリコン（以下、ａ
−３ｉという）を使用した光導電型フォトセンサが提案
されている。このフォトセンサは透明ガラス基板の表面
にプラズマＣＶＤ法によってａ−３ｉの薄膜半導体層を
形成することにより構成される。このような構成により
、大面積及び長尺のフォトセンサアレイを容易に得るこ
とができる。For this reason, amorphous silicon (hereinafter referred to as a
-3i) has been proposed. This photosensor is constructed by forming an a-3i thin film semiconductor layer on the surface of a transparent glass substrate by plasma CVD. With such a configuration, a large-area and long photosensor array can be easily obtained.
第３図は光導電型密着センサの概要を示す断面図である
［昭和６１年１０月２３日テレビジョン学会技術研究会
（ＥＤ９８４）報告］。この密着センサは、透明ガラス
基板３１上にａ−３Ｌの光電変換膜３２を形成し、この
光電変換膜３２上に共通電極及び個別電極からなる電極
層３３を形成したものである。ａ−３ｉの光電変換膜３
２に画像光１が入射すると、この光電変換膜３２が導電
性に変化し、電極層３３の共通電極及び個別電極間に電
流が流れる。これにより、入射光が電気信号に変換され
る。このような密着センサを使用することにより、読取
り装置の小型化及び低価格化が可能となる。FIG. 3 is a cross-sectional view showing an outline of a photoconductive contact sensor [Reported by the Television Society of Japan Technical Research Group (ED984), October 23, 1985]. This contact sensor has an a-3L photoelectric conversion film 32 formed on a transparent glass substrate 31, and an electrode layer 33 consisting of a common electrode and individual electrodes formed on this photoelectric conversion film 32. a-3i photoelectric conversion film 3
When the image light 1 is incident on the photoelectric conversion film 32, the photoelectric conversion film 32 becomes conductive, and a current flows between the common electrode and the individual electrodes of the electrode layer 33. This converts the incident light into an electrical signal. By using such a contact sensor, it is possible to make the reading device smaller and lower in price.
［発明が解決しようとする課題］
しかしながら、上述した従来の密着型フォトセンサにお
いては、ａ Ｓｌ光電変換膜３２の厚さが数１０００
人と比較的薄いため、基板３１の下方から入射した画像
光１の一部はセンサ素子部を構成する電極層３３の共通
電極及び個別電極間のギャップに整合する領域の光電変
換膜３２で吸収されずに透過してしまい、光電変換効率
か低いという問題点を有する。また、受光する画像光１
の光吸収特性を上げるためにはａ−８ｉ光電変換膜３２
の厚さを増せば良いが、そうすると成膜時間が増加する
という製造上の不利がある。また、ａ−８ｉ光電変換膜
３２・を厚くしても、この膜３２における最も光感度が
高い部分は電極層３３の近傍の部分であるため、入射光
がａ−３ｉ光電変換膜３２の上層の電極層３３の近傍に
到達する迄に減衰してしまい、光電変換膜３２を厚くし
ても、光電変換効率が向上せず、極端な場合には光電変
換効率が低下して逆効果になる虞れがある。[Problems to be Solved by the Invention] However, in the conventional contact type photosensor described above, the thickness of the aSl photoelectric conversion film 32 is several thousand nanometers.
Since the substrate 31 is relatively thin, a portion of the image light 1 incident from below the substrate 31 is absorbed by the photoelectric conversion film 32 in a region matching the gap between the common electrode and the individual electrodes of the electrode layer 33 constituting the sensor element section. The problem is that the photoelectric conversion efficiency is low because the photoelectric conversion efficiency is low. In addition, the received image light 1
In order to improve the light absorption characteristics of the a-8i photoelectric conversion film 32
Although it is possible to increase the thickness of the film, there is a disadvantage in manufacturing that the film forming time increases. Moreover, even if the a-8i photoelectric conversion film 32 is made thicker, the part of this film 32 with the highest photosensitivity is the part near the electrode layer 33, so that the incident light is transmitted to the upper layer of the a-3i photoelectric conversion film 32. The photoelectric conversion efficiency is not improved even if the photoelectric conversion film 32 is made thicker, and in extreme cases, the photoelectric conversion efficiency decreases and has the opposite effect. There is a risk.
本発明はかかる問題点に鑑みてなされたものであって、
アモルファスシリコン膜等の光電変換膜を必要以上に厚
くすることなく画像光を有効に受光することができると
共に、雑音発生等の不都合を招来することがなく優れた
光電変換特性が得られる混成集積化光センサ用光電変換
素子アレイを提供することを目的とする。The present invention has been made in view of such problems, and includes:
Hybrid integration that enables effective reception of image light without making the photoelectric conversion film such as an amorphous silicon film unnecessarily thick, and provides excellent photoelectric conversion characteristics without causing inconveniences such as noise generation. An object of the present invention is to provide a photoelectric conversion element array for an optical sensor.
［課題を解決するための手段］
本発明は係る混成集積化光センサ用光電変換素子アレイ
は、絶縁性透明基板と、相互間にギャップをおいて配置
された共通電極及び個別電極を有するセンサ素子部と、
前記透明基板とセンサ素子部との間に配設された光電変
換膜と、前記センナ素子部上に形成された絶縁層と、前
記センサ素子部の直上域の前記絶縁層上に１又は２以上
のセンサ素子部毎に相互に分離して形成された光反射層
と、を有することを特徴とする。[Means for Solving the Problems] The present invention provides a photoelectric conversion element array for a hybrid integrated optical sensor, which includes a sensor element having an insulating transparent substrate, and a common electrode and individual electrodes arranged with a gap therebetween. Department and
A photoelectric conversion film disposed between the transparent substrate and the sensor element part, an insulating layer formed on the senna element part, and one or more on the insulating layer in the area directly above the sensor element part. A light reflecting layer is formed separately from each other for each sensor element portion.
［作用］
本発明によれば、センサ素子部の直上域の絶縁層上に設
けた光反射層によって、光電変換膜を通過した画像光は
反射され、再び光電変換膜に入射する。従って、画像光
がセンサ素子部に整合する領域の光電変換膜に高効率で
導光され、光電変換効率が向上する。更に、この光反射
層は各素子毎又はブロック毎に電気的に分離されている
ために、対接地導体との間の浮遊容量の増加が極めて少
なく、雑音発生が少ない光電変換素子アレイが得られる
。[Function] According to the present invention, the image light that has passed through the photoelectric conversion film is reflected by the light reflection layer provided on the insulating layer directly above the sensor element portion, and enters the photoelectric conversion film again. Therefore, the image light is guided with high efficiency to the photoelectric conversion film in the region aligned with the sensor element portion, and the photoelectric conversion efficiency is improved. Furthermore, since this light-reflecting layer is electrically isolated for each element or block, there is extremely little increase in stray capacitance with the ground conductor, resulting in a photoelectric conversion element array that generates less noise. .
［実施例］
以下、本発明の実施例について添付の図面を参照して詳
細に説明する。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the accompanying drawings.
第１図（ａ）、（ｂ）は、夫々本発明の第１の実施例に
係る光電変換素子アレイを示す断面図及び平面図である
。FIGS. 1(a) and 1(b) are a cross-sectional view and a plan view, respectively, showing a photoelectric conversion element array according to a first embodiment of the present invention.
透明ガラス基板１１上にアモルファスシリコンナイトラ
イド（以下、ａＳｉＮｘという）膜１２がプラズマＣＶ
Ｄ法により約１０００人の厚さで形成されており、この
ａＳｉＮｘ膜１２上には不純物を混入させない真性アモ
ルファスシリコン（以下、１−ａ−３ｉという）からな
る光電変換膜１３が約５０００人の厚さで形成されてい
る。An amorphous silicon nitride (hereinafter referred to as aSiNx) film 12 is formed on a transparent glass substrate 11 by plasma CVD.
The photoelectric conversion film 13 made of intrinsic amorphous silicon (hereinafter referred to as 1-a-3i) that does not contain impurities is formed on the aSiNx film 12 to a thickness of about 5000 by the D method. It is formed with a thickness.
そして、この光電変換膜１３上には、ｎ＋アモルファス
シリコン（ｎ”−ａ−３ｉ）からなる高ド−ブオーミッ
ク層１４が約１０００人の厚さで形成されている。On this photoelectric conversion film 13, a high dome ohmic layer 14 made of n+ amorphous silicon (n''-a-3i) is formed to a thickness of about 1000 nm.
オーミック層１４上には、クロム（Ｃｒ）層を約１００
０人の厚さで成膜し、このＣｒ層をエツチングによりパ
ターニングすることによって、個別電極及び共通電極を
有するセンサ素子部１ｏと、このセンサ素子部１０から
の引出しリードとからなる第１導体層１５が形成されて
いる。On the ohmic layer 14, a chromium (Cr) layer with a thickness of about 100
A first conductor layer consisting of a sensor element part 1o having individual electrodes and a common electrode, and lead leads from this sensor element part 10 is formed by forming a film to a thickness of 0.03 mm and patterning this Cr layer by etching. 15 is formed.
更に、これらの第１導体層１５の上には光透過性の感光
性ポリイミド層１６が塗布され、ポリイミド層１６上に
は１０００人のＣｒ層と３０００人のＡｕ層との積層体
からなる第２導体層１７が配線層として形成されている
。なお、ポリイミド層１６には、第１導体１１５と第２
導体層１７とを接続するためのホール１９が設けられて
おり、第２導体層１７は、このホール１９内に埋め込ま
れて第１導体層１５に電気的に接続されている。Furthermore, a light-transmissive photosensitive polyimide layer 16 is coated on these first conductor layers 15, and on the polyimide layer 16, a first layer consisting of a laminate of a 1000-layer Cr layer and a 3000-layer Au layer is coated. A two-conductor layer 17 is formed as a wiring layer. Note that the polyimide layer 16 has a first conductor 115 and a second conductor 115.
A hole 19 is provided for connection to the conductor layer 17, and the second conductor layer 17 is embedded in the hole 19 and electrically connected to the first conductor layer 15.
センサ素子部１０の直上域のポリイミド層１６上には各
センサ素子部１０毎に分離独立して反射膜１８が形成さ
れている。この反射膜１８は配線層の第２導体層１７の
形成と同時に形成される。A reflective film 18 is formed separately and independently for each sensor element part 10 on the polyimide layer 16 directly above the sensor element part 10 . This reflective film 18 is formed simultaneously with the formation of the second conductor layer 17 as a wiring layer.
このように構成される光電変換素子アレイにおいては、
基板１１の下面から受光した画像光１はセンサ素子部１
０の光電変換膜１３にて吸収され、この光電変換膜１３
にフォトキャリアが発生する。In the photoelectric conversion element array configured in this way,
The image light 1 received from the bottom surface of the substrate 11 is transmitted to the sensor element section 1
0 is absorbed by the photoelectric conversion film 13, and this photoelectric conversion film 13
photocarriers are generated.
一方、この光電変換膜１３に吸収されずに透過した光は
分離反射膜１８にて反射して再びセンサ素子部１０に入
射する。これにより一旦透過してしまった光もセンサ素
子部１０の光電変換膜１３に吸収されてキャリアの発生
に寄与する。On the other hand, the light that is transmitted without being absorbed by the photoelectric conversion film 13 is reflected by the separation reflection film 18 and enters the sensor element section 10 again. As a result, the light that has once passed through is also absorbed by the photoelectric conversion film 13 of the sensor element section 10 and contributes to the generation of carriers.
従って、この分離反射膜１８により、光電変換特性が向
上し、例えば、１−ａ−Ｓｉ光電変換膜１３の膜厚が薄
くても、十分に高い光電変換効率が得られ、また、光電
変換膜１３の膜厚に多少バラツキがあっても、各センサ
素子部１ｏについて均一な素子特性が得られる。Therefore, this separation reflection film 18 improves the photoelectric conversion characteristics, and for example, even if the 1-a-Si photoelectric conversion film 13 is thin, a sufficiently high photoelectric conversion efficiency can be obtained, and the photoelectric conversion film Even if there is some variation in the film thickness of the sensor element 13, uniform element characteristics can be obtained for each sensor element portion 1o.
更に、この反射膜１８は他の反射膜から電気的に分離さ
れ、個々に独立しているために、対接地導体との間の静
電容量と、センサ素子部に並列に入る浮遊容量とは極め
て小さい。従って、浮遊容量に蓄積される不要な電荷に
よって雑音が発生することはなく、大きなＳＮ比を得る
ことができる。Furthermore, since this reflective film 18 is electrically separated from other reflective films and is independent, the capacitance between it and the ground conductor and the stray capacitance that enters the sensor element section in parallel are Extremely small. Therefore, noise is not generated due to unnecessary charges accumulated in the stray capacitance, and a large S/N ratio can be obtained.
第２図は本発明の第２の実施例を示す断面図である。な
お、第２図においては、透明ガラス基板２１上に形成さ
れた光電変換膜２３、第１導体層２５、ポリイミド膜２
６及び分離反射板２８のみが図示されている。本実施例
は、これらの基板２１、光電変換膜２３、第１導体Ｎ２
５、ポリイミド膜２６及び配線層の第２導体層（図示せ
ず）等の構成は第１の実施例と同様である。FIG. 2 is a sectional view showing a second embodiment of the invention. In addition, in FIG. 2, a photoelectric conversion film 23, a first conductor layer 25, and a polyimide film 2 formed on a transparent glass substrate 21 are shown.
6 and the separation reflector 28 are shown. In this embodiment, these substrate 21, photoelectric conversion film 23, first conductor N2
5. The structures of the polyimide film 26 and the second conductor layer (not shown) of the wiring layer are the same as in the first embodiment.
但し、分離反射Ｍ２８は第１導体層２５の個別電極と共
通電極とが所定の間隙をおいて対向しているセンサ素子
部のギャップ２０、つまり光電変換膜２３を透過した画
像光１が通過するギャップ２０の直上域にのみ形成され
ている。通常、ギャップ２０は約１０μｍの幅に高精度
でパターン化されているので、この反射膜２８の形成に
は同様の高精度が必要になるが、分離反射膜２８と第１
導体Ｎ２５とがポリイミド層２６を介して上下に重なる
部分が殆ど無い。このため、このような構成の光電変換
素子アレイは、第１の実施例に示した効果が得られるの
に加え、万一絶縁性のポリイミド層２６に欠陥が存在し
ても、第１導体層２５の個別電極と共通電極とが分離反
射膜２８を介して短絡事故を起こしてしまうことはない
。However, in the separation reflection M28, the image light 1 transmitted through the gap 20 of the sensor element part where the individual electrodes of the first conductor layer 25 and the common electrode face each other with a predetermined gap, that is, the photoelectric conversion film 23 passes. It is formed only in the area directly above the gap 20. Normally, the gap 20 is patterned with high precision to a width of about 10 μm, so forming the reflective film 28 requires similar high precision.
There is almost no vertical overlap between the conductor N25 and the polyimide layer 26. Therefore, in addition to obtaining the effects shown in the first embodiment, the photoelectric conversion element array having such a configuration can also be used even if there is a defect in the insulating polyimide layer 26. There is no possibility that a short circuit will occur between the 25 individual electrodes and the common electrode via the separation reflective film 28.
これにより、デバイス基板の歩留りが著しく向上する他
、浮遊容量も減少するので、光反射による光電変換効率
の向上効果を劣化させることなく雑音だけを抑制するこ
とができ、ＳＮ比を一層向上させることができる。This not only significantly improves the yield of device substrates, but also reduces stray capacitance, making it possible to suppress only noise without deteriorating the photoelectric conversion efficiency improvement effect caused by light reflection, further improving the S/N ratio. Can be done.
なお、上記各実施例においては、分離反射膜１８．２８
を各センサ素子部毎に対応させて夫々独立して設けたが
、これに限ることなく、例えば、ブロック毎に分離させ
るが又は２素子毎若しくは３素子毎にまとめて設けても
よく、いずれも上記実施例と同様の効果を奏する。In addition, in each of the above embodiments, the separation reflective film 18.28
are provided independently for each sensor element portion, but the present invention is not limited to this; for example, they may be provided separately for each block, or may be provided for every two or three elements; The same effects as in the above embodiment are achieved.
［発明の効果］
以上説明したように本発明によれば、センサ素子部上に
反射膜を設けたから、光電変換効率が向上し、高感度の
光電変換素子アレイが得られる。[Effects of the Invention] As described above, according to the present invention, since the reflective film is provided on the sensor element portion, the photoelectric conversion efficiency is improved and a highly sensitive photoelectric conversion element array can be obtained.
しかも、この反射膜は１又は２以上のセンサ素子部毎に
分離独立しているから、この反射膜を設けても浮遊容量
が増大することはない。このため、高ＳＮ比の光電変換
素子アレイが得られる。Moreover, since this reflective film is separated and independent for each one or more sensor element sections, stray capacitance does not increase even if this reflective film is provided. Therefore, a photoelectric conversion element array with a high SN ratio can be obtained.
従って、本発明を、例えば、ファクシミリの読取りデバ
イス等に適用すれば、原稿に忠実な画信号による高品質
の情報伝達が可能になるという多大の効果を奏する。Therefore, if the present invention is applied to, for example, a facsimile reading device, it will have the great effect of making it possible to transmit high-quality information using an image signal that is faithful to the original.
第１図（ａ）、（ｂ）は夫々本発明の第１の実施例に係
る光電変換素子アレイを示す断面図及び平面図、第２図
は本発明の第２の実施例を示す断面図、第３図は従来の
光電変換素子アレイを示す断面図である。
１；画像光、１０；センサ素子部、１１，２１゜３１；
基板、１２；ａ−３ｉＮｘ膜、１３．２Ｂ。
３２；光電変換膜、１４；オーミック層、１５゜２５；
第１導体層、１６，２６；ポリイミド層、１７；第２導
体層、１８，２８；分離反射膜、３３；電極層
第１図
第３図
１：却東九
３３；覧詩４1(a) and (b) are a sectional view and a plan view, respectively, showing a photoelectric conversion element array according to a first embodiment of the present invention, and FIG. 2 is a sectional view showing a second embodiment of the present invention. , FIG. 3 is a sectional view showing a conventional photoelectric conversion element array. 1; Image light, 10; Sensor element section, 11, 21° 31;
Substrate, 12; a-3iNx film, 13.2B. 32; Photoelectric conversion film, 14; Ohmic layer, 15°25;
First conductor layer, 16, 26; Polyimide layer, 17; Second conductor layer, 18, 28; Separation reflective film, 33; Electrode layer
Claims (1)
置された共通電極及び個別電極を有するセンサ素子部と
、前記透明基板とセンサ素子部との間に配設された光電
変換膜と、前記センサ素子部上に形成された絶縁層と、
前記センサ素子部の直上域の前記絶縁層上に１又は２以
上のセンサ素子部毎に相互に分離して形成された光反射
層と、を有することを特徴とする混成集積化光センサ用
光電変換素子アレイ。(1) An insulating transparent substrate, a sensor element section having a common electrode and individual electrodes arranged with a gap therebetween, and a photoelectric conversion film disposed between the transparent substrate and the sensor element section; , an insulating layer formed on the sensor element section,
A photoelectronic device for a hybrid integrated optical sensor, comprising: a light reflecting layer formed on the insulating layer directly above the sensor element section and separated from each other for each one or more sensor element sections. Conversion element array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010145A JPH01184953A (en) | 1988-01-20 | 1988-01-20 | Photoelectric conversion element array for hybrid integration photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010145A JPH01184953A (en) | 1988-01-20 | 1988-01-20 | Photoelectric conversion element array for hybrid integration photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01184953A true JPH01184953A (en) | 1989-07-24 |
Family
ID=11742117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63010145A Pending JPH01184953A (en) | 1988-01-20 | 1988-01-20 | Photoelectric conversion element array for hybrid integration photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01184953A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6317554A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Photoconductive device |
-
1988
- 1988-01-20 JP JP63010145A patent/JPH01184953A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6317554A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Photoconductive device |
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