KR960006198B1 - Contact image sensor - Google Patents
Contact image sensor Download PDFInfo
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- KR960006198B1 KR960006198B1 KR1019920023325A KR920023325A KR960006198B1 KR 960006198 B1 KR960006198 B1 KR 960006198B1 KR 1019920023325 A KR1019920023325 A KR 1019920023325A KR 920023325 A KR920023325 A KR 920023325A KR 960006198 B1 KR960006198 B1 KR 960006198B1
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- image sensor
- region
- photoelectric conversion
- glass substrate
- thin film
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- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
제1도는 본 발명의 상부 이메지 센서 구조 단면도.1 is a cross-sectional view of the upper image sensor structure of the present invention.
제2도는 본 발명의 하부 이메지 센서 구조 단면도.2 is a cross-sectional view of the lower image sensor structure of the present invention.
제3도는 본 발명의 밀착 이메지 센서 구조 단면도.3 is a cross-sectional view of the close-up image sensor structure of the present invention.
제4도는 본 발명의 전체적인 밀착 이메지 센서 구조 단면도.4 is a cross-sectional view of an overall close image sensor structure of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 유리기판 2 : 게이트전극1: glass substrate 2: gate electrode
2a : 금속라인 3,7 : 절연막2a: metal line 3,7: insulating film
4,4a : 반도체층 5 : 오믹접촉층4,4a: semiconductor layer 5: ohmic contact layer
6 : 금속전극 8,8a : 금속6: metal electrode 8,8a: metal
9 : 보호막 10 : 투명전극9: protective film 10: transparent electrode
6a : 소오스 전극 6b : 드레인 전극6a: source electrode 6b: drain electrode
본 발명은 정보통신 단말기에 관한 것으로 특히 원고의 독취 면적 확대를 위한 결합방식의 밀착 이메지센서에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an information communication terminal, and more particularly, to a close-type image sensor of a combined method for expanding the reading area of a document.
일반적으로 팩시밀리(facsimile)의 원고 독취면적을 확대시키기 위해서는 대면적인 밀착 이메지 센서(Contact Image Sensor:SIS)를 형성하여야 한다. 그러나 동일 기판에 대면적인 소자를 형성하게 되면 균일성(Unifonnty)의 문제가 발생하여 일정크기 이상의 소자 형성이 곤란하다.In general, in order to enlarge the original reading area of facsimile, a large contact image sensor (SIS) should be formed. However, if a large area device is formed on the same substrate, there is a problem of uniformity, which makes it difficult to form a device having a certain size.
종래의 밀착 이메지 센서(CIS)는 하나의 유리기판위에 광전변환소자(포트다이오드)와 박막트랜지스터를 어레이(Array)로 하여 만든 형태로 본 발명의 상,하부 이메지 센서인 제1도 및 제2도와 같다.Conventional close-up image sensor (CIS) is formed by forming a photoelectric conversion element (port diode) and a thin film transistor in an array on one glass substrate, the upper and lower image sensor of the present invention 1 and 2 same.
이와같은 종래의 밀착 이메지 센서에 있어서는 대면적화를 하기위해서는 막형성 장치 및 광식각 장치가 전부 대면적화가 되어야 하므로 장치가 매우 커야만 되는 문제점과, 대면적의 소자를 형성하게 되면 불균일성이 발생하게 되고, 한 기판위에서 몇개의 소자만 불량이 발생하여도 전체를 불량 처리를 해야하기 때문에 수율이 저하되는 등의 문제점이 있다.In this conventional close-up image sensor, in order to make a large area, the film forming apparatus and the photoetching apparatus must all have a large area, and thus, the problem that the device must be very large and non-uniformity is generated when a large area element is formed. However, even if only a few devices fail on one substrate, there is a problem that the yield is reduced because the entire process must be performed.
본 발명은 이와같은 문제점을 해결하기 위하여 안출한 것으로써, 수율을 향상시킨 대면적의 밀착 이메지센서를 제공하는데 그 목적이 있다.The present invention has been made to solve such a problem, and an object thereof is to provide a large area close-up image sensor with improved yield.
이와같은 목적을 달성하기 위한 본 방법은 상부 이메지 센서는 광전변화소자의 투명전극을 기판쪽에 설치하고, 하부 이메지 센서는 광전변환소자의 투명전극을 기판 반대쪽에 설치한 복수개의 상,하부 이메지 센서를 접착하여 형성한 밀착 이메지 센서이다.In order to achieve the above object, the upper image sensor includes a plurality of upper and lower image sensors in which a transparent electrode of a photoelectric conversion element is installed on a substrate side, and a lower image sensor is installed in a opposite side of a substrate. A close-up image sensor formed by bonding.
이와같은 본 발명의 밀착 이메지 센서를 첨부된 도면을 참조하여 보다 상세히 설명하면 다음과 같다. 제1도는 본 발명의 상부 이메지 센서 구조 단면도이고 제2도는 본 발명의 하부 이메지 센서구조 단면도로써, 상,하부 이메지 센서 모두 빛의 신호를 전기적인 신호로 변환시키는 광전변환소자영역(A)과, 스위칭소자인 박막트랜지스터 영역(B), 데이타 라인들로 이루어진 매트릭스 라인(matrix line)영역(C)로 구성된다.Referring to the attached image sensor of the present invention as described above in more detail with reference to the accompanying drawings. 1 is a cross-sectional view of the upper image sensor structure of the present invention, and FIG. 2 is a cross-sectional view of the lower image sensor structure of the present invention, wherein the upper and lower image sensors both convert the light signal into an electrical signal. A thin film transistor region B, which is a switching element, and a matrix line region C composed of data lines.
상부 이메지 센서(제1도)의 박막트랜지스터 영역(B)은 유리기판(1)위에 금속(Cr)으로 게이트 전극(2)이 전면에 절연막(3) 이 형성되며, 절연막(3)위에 비정질실리콘(a-SihH)등의 반도체층(4)이 형성되고, 반도체층(4)양측에 n 비정질실리큰등의 오믹접촉층(Ohmic Contact)(5)이 형성되고, 양측 오믹접촉층(5)에 소오스/드레인 전극(6)이 형성된다. 또한, 광전변환소자 영역(A)은 상기 절연막(3)위에 투명전극(10)이 형성되고 투명전극(10)위에 반도체층(4a)과 금속전극(6a)이 형성되어 포트 다이오드를 구성한다.The thin film transistor region B of the upper image sensor (FIG. 1) is formed of metal Cr on the glass substrate 1 and an insulating film 3 is formed on the entire surface of the gate electrode 2, and amorphous silicon is formed on the insulating film 3. A semiconductor layer 4 such as (a-SihH) is formed, and ohmic contact layers 5 such as n amorphous silicon are formed on both sides of the semiconductor layer 4, and both ohmic contact layers 5 are formed. Source / drain electrodes 6 are formed in the substrate. In the photoelectric conversion element region A, the transparent electrode 10 is formed on the insulating film 3, and the semiconductor layer 4a and the metal electrode 6a are formed on the transparent electrode 10 to form a port diode.
그리고, 매트릭스 라인 영역(C)은 광전변환 소자영역에서 생성된 영상신호전하는 박막트랜지스터 영역을 통해 전송하는 금속라인으르 구성된다.In addition, the matrix line region C includes a metal line that transmits the image signal charges generated in the photoelectric conversion element region through the thin film transistor region.
여기서, 박막트랜지스터 영역(B)의 소오스/전극(6a)과 광전변환소자 영역(A)의 금속전극(6)은 금속(Al)(8)에 의해 연결되고 드레인 전극(6b)과 매트릭스 라인영역(C)의 금속라인(2a)은 금속(Al)(8a)에 의해 연결되며, 보호막(9)에 의해 보호되어 있다.Here, the source / electrode 6a of the thin film transistor region B and the metal electrode 6 of the photoelectric conversion element region A are connected by a metal (Al) 8 and the drain electrode 6b and the matrix line region. The metal line 2a of (C) is connected by the metal (Al) 8a and is protected by the protective film 9.
한편 하부 이메지 센서(제2도)는 상부 이메지 센서 구조와 같으나 광전 변환 소자영역(A)에서 금속전극(6)이 유리기판(1)쪽에 형성되고 투명전극(10)이 유리기판(1) 반대쪽에 형성된 구조이다.On the other hand, the lower image sensor (FIG. 2) has the same structure as the upper image sensor, but in the photoelectric conversion element region A, the metal electrode 6 is formed on the glass substrate 1 side and the transparent electrode 10 is opposite to the glass substrate 1. It is a structure formed on.
이와같은 본 발명의 상하부 이메지 센서의 제조방법을 간단히 설명하면 먼저 상부 이메지 센서는 유리기판(1)위의 박막트랜지스터 영역(B)에 게이트 전극(2)과 매트릭스 라인영역(C)에 금속라인(2a)를 형성하고 전면에 절연막(3)을 형성한다. 계속해서 박막트랜지스터 영역(B) 비정질 실리콘등을 증착하고 패터닝하여 반도체층(4)을 형성하고 오믹접촉층(5)을 반도체층(6)위에 형성하고, 금속을 증착하고 패터닝하여 소오스/드레인전극(6a,6b)를 형성한 다음, 광전변환 소자 영역(A)의 절연막(3)외에 투명전극(10)을 DC 마그네트론 스퍼터링 장치로 증착하고 패터닝한 다음 그위에 비정질 실리콘을 약 8000Å 정도 PECVD 장치를 이용하여 증착하고 비정질 실리콘위에 금속(Cr)을 연속증착하여 포토에치 공정으로 금속(Cr)과 비정질 실리콘을 패터닝하여 반도체층(4a)과 금속전극(8a)을 형성한 다음 전면에 절연막(SiN)(7)을 증착한 후 콘택홀을 형성하고 금속(Al)(8,8a)을 증착패터닝하여 금속전극(8a)과 소오스전극(6a)을 연결하고 드레인 전극(6b)과 금속라인(2a)을 연결한 다음 전면에 보호막(9)을 형성한다.Briefly describing the manufacturing method of the upper and lower image sensor of the present invention, first, the upper image sensor includes a metal line (B) in the gate electrode (2) and the matrix line region (C) in the thin film transistor region (B) on the glass substrate (1). 2a) is formed and an insulating film 3 is formed over the entire surface. Subsequently, a thin film transistor region (B) is deposited and patterned amorphous silicon to form a semiconductor layer 4, an ohmic contact layer 5 is formed on the semiconductor layer 6, and a metal is deposited and patterned to form a source / drain electrode. (6a, 6b), and then, in addition to the insulating film 3 of the photoelectric conversion element region A, the transparent electrode 10 was deposited and patterned with a DC magnetron sputtering device, and then amorphous PE was deposited thereon at about 8000 kPa. By depositing and continuously depositing the metal (Cr) on the amorphous silicon by patterning the metal (Cr) and amorphous silicon by a photoetch process to form a semiconductor layer (4a) and a metal electrode (8a) and then an insulating film (SiN) on the front (7) is deposited, and then a contact hole is formed, and metal (Al) (8,8a) is deposited and patterned to connect the metal electrode 8a and the source electrode 6a, and the drain electrode 6b and the metal line 2a. ) To form a protective film (9) on the front.
그리고 하부 이메지 센서는 상부 이메지 센서와 같은 방법으로 형성하나 금속전극을 소오스 전극(6a)과 일체형으로 형성하고 그위에 반도체층(4a)과 투명전극(10)을 형성한다.The lower image sensor is formed in the same manner as the upper image sensor, but the metal electrode is integrally formed with the source electrode 6a, and the semiconductor layer 4a and the transparent electrode 10 are formed thereon.
이와같이 형성된 상부 이메지 센서(제1도)와 하부 이메지 센서(제2도)를 제3도와 같이 얼라인먼트(Alignment Key)를 이용하여 양가쪽기판을 접합시킨다.The upper image sensor (FIG. 1) and the lower image sensor (FIG. 2) thus formed are bonded to both substrates using an alignment key as shown in FIG.
그러면 사이즈(SiZe)가 두배 증가된 밀착 이메지 센서가 된다.This results in a close image sensor with a double size SiZe.
상기의 방법으로 상하부 이메지 센서를 복수개 접합시키면 제4도와 같다. 이와같은 본 발명의 밀착 이메지 센서의 동작은 종래의 밀착 이메지 센서와 동일하게 발광다이오드(LED)에서 비추어진 광이 원고에 의해 반사되어 원고의 내용에 따라 반사광의 세기가 달라지게 되는데 이광의 세기를 광전변환 소자 영역(A)에서 전기적인 신호로 변환시켜주면, 박막트랜지스터 영역(B)에서 이를 스위칭하여 매트릭스 라인영역(C)을 통하여 순차적으로 출력쪽으로 보내준다.When the plurality of upper and lower image sensor are bonded by the above method, it is as shown in FIG. The operation of the close-up image sensor of the present invention is the same as the conventional close-up image sensor, the light emitted from the light emitting diode (LED) is reflected by the original, the intensity of the reflected light is changed according to the content of the original. When the photoelectric conversion element region (A) is converted into an electrical signal, the thin film transistor region (B) switches it and sequentially sends it to the output through the matrix line region (C).
이상에서 설명한 바와같이 본 발명의 밀착 이메지 센서에 있어서는 상하부 이메지 센서로 분리할 수 있어 소자면적이 줄어들고 한기판이 불량이더라도 다른 기판의 소자는 사용할 수 있으므로 수율(yield)이 향상되고 기존의 장비로도 대면적의 밀착 이메지 센서를 제조할 수 있으므로 생산가가 감소되는 등의 효과가 있다.As described above, in the close-up image sensor of the present invention, the upper and lower image sensors can be separated, so that the device area is reduced, and even if one substrate is defective, the elements of the other substrate can be used. Since the close-size image sensor of the area can be manufactured, there is an effect of reducing the production cost.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920023325A KR960006198B1 (en) | 1992-12-04 | 1992-12-04 | Contact image sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920023325A KR960006198B1 (en) | 1992-12-04 | 1992-12-04 | Contact image sensor |
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| KR940016855A KR940016855A (en) | 1994-07-25 |
| KR960006198B1 true KR960006198B1 (en) | 1996-05-09 |
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| KR1019920023325A KR960006198B1 (en) | 1992-12-04 | 1992-12-04 | Contact image sensor |
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