JPH0116309B2 - - Google Patents
Info
- Publication number
- JPH0116309B2 JPH0116309B2 JP58162624A JP16262483A JPH0116309B2 JP H0116309 B2 JPH0116309 B2 JP H0116309B2 JP 58162624 A JP58162624 A JP 58162624A JP 16262483 A JP16262483 A JP 16262483A JP H0116309 B2 JPH0116309 B2 JP H0116309B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- cleaning liquid
- chamber
- vacuum
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004140 cleaning Methods 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Separation Of Particles Using Liquids (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は真空蒸着室、スパツタリング室、化学
蒸着室等の真空室内のクリーニング装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a cleaning device for a vacuum chamber such as a vacuum deposition chamber, a sputtering chamber, or a chemical vapor deposition chamber.
(従来の技術)
一般に前記の真空蒸着室等の真空室はサブスト
レートに蒸着、スパツタリング等の処理を施し、
ICその他のエレクトニクス機器等の製造するに
使用されるが、近時これらの機器は超LSIのよう
にマイクロ化される傾向にあるので該室内の塵芥
数を高度に減少させ、塵芥がサブストレートに付
着することによりLSI回路の断線等が発生するこ
とを防止する必要がある。従来、該真空室内に送
り込まれるサブストレートは、これに塵芥が付着
して該室内に持込まれないように予め洗浄される
ので外部から塵芥が持込まれることは少ないが、
真空室内では例えば内壁、サブストレート駆動装
置等に付着した蒸発物質、スパツタ物質の剥落に
より或はサブストレート駆動装置の摺動部分から
塵芥が発生するので、該真空室をオーバーホール
して塵芥を洗浄するか塵芥の舞い上りを防ぐよう
に緩つくりと時間を掛けて真空室内を排気する手
段を構じて蒸着等に際してサブストレートに塵芥
が付着することを防止している。また、真空室内
に水分が導入されると真空排気に時間が掛り、サ
ブストレートの処理開始までが長びくので、一般
の容器のように真空室内を洗浄液の噴射で、洗浄
することは行なわれていない。(Prior Art) Generally, a vacuum chamber such as the above-mentioned vacuum evaporation chamber performs a process such as vapor deposition or sputtering on a substrate.
It is used to manufacture ICs and other electronic devices, but these days, these devices tend to be micro-sized like super LSIs, so the amount of dust in the room is greatly reduced, and the dust is removed from the substrate. It is necessary to prevent disconnection of the LSI circuit from occurring due to adhesion to the surface. Conventionally, the substrate sent into the vacuum chamber is cleaned in advance to prevent dust from adhering to it and being brought into the chamber, so it is rare for dust to be brought in from outside.
In the vacuum chamber, dust is generated due to the peeling off of evaporated substances and spatter substances attached to the inner walls, substrate drive device, etc., or from the sliding parts of the substrate drive device, so the vacuum chamber is overhauled and the dust is cleaned. To prevent dust from flying up, the vacuum chamber is loosely constructed and means is provided to exhaust the inside of the vacuum chamber over time to prevent dust from adhering to the substrate during vapor deposition or the like. Additionally, if moisture is introduced into the vacuum chamber, evacuation takes time and it takes a long time to start processing the substrate, so the inside of the vacuum chamber is not cleaned by spraying cleaning liquid like in general containers. .
(発明が解決しようとする課題)
前記のように真空室をオーバーホールして塵芥
の清掃を行なうことは、非常に人手と時間が掛り
能率的ではない。(Problems to be Solved by the Invention) As described above, overhauling the vacuum chamber and cleaning the dust requires a lot of manpower and time, and is not efficient.
また、前記のように真空排気速度が塵芥が舞い
上らないように遅くすると、サブストレートの処
理能率が低下して好ましくない。 Further, as described above, if the evacuation speed is slowed to prevent dust from flying up, the processing efficiency of the substrate decreases, which is undesirable.
本発明は真空室をオーバーホールすることなく
短時間で内部の塵芥をクリーニングするに適した
装置を提供することを目的とするものである。 An object of the present invention is to provide an apparatus suitable for cleaning dust inside a vacuum chamber in a short time without overhauling the vacuum chamber.
(課題を解決するための手段)
本発明では、真空蒸着室等の真空ポンプが接続
された真空室内にノズルを設けると共に該真空室
の底部に排出管を接続し、該ノズルに、供給管、
フイルタ及び送り出しポンプを介して洗浄流体を
貯えた洗浄液タンクを接続し、更に該供給管に乾
燥用ガス源を接続することにより、前記目的を達
成するようにした。(Means for Solving the Problems) In the present invention, a nozzle is provided in a vacuum chamber such as a vacuum evaporation chamber to which a vacuum pump is connected, and a discharge pipe is connected to the bottom of the vacuum chamber, and a supply pipe,
The above object was achieved by connecting a cleaning liquid tank storing cleaning fluid through a filter and a delivery pump, and further connecting a drying gas source to the supply pipe.
(作用)
真空室内で塵芥により汚れると、送り出しポン
プを作動させ、洗浄液タンクからフイルタを介し
てアルコールフレオン或はトリクレン等の洗浄流
体を供給管に流し、ノズルから真空室内へ噴射す
る。この洗浄流体の噴射により真空室内の塵芥は
洗い流され、その排液は真空室の底部に接続した
排出管から外部へ排除される。この洗浄で濡れた
真空室内は、該供給管に接続した乾燥用ガス源か
ら該ノズルを介して乾燥用ガスを噴射することに
よつて迅速に乾燥され、真空室をオーバーホール
することなく簡単に清掃することが出来る。(Function) When the vacuum chamber becomes contaminated with dust, the delivery pump is activated, and a cleaning fluid such as alcohol freon or trichlene is flowed from the cleaning liquid tank through the filter into the supply pipe and is injected into the vacuum chamber from the nozzle. The jet of cleaning fluid washes away the dust in the vacuum chamber, and the waste liquid is discharged to the outside through a discharge pipe connected to the bottom of the vacuum chamber. The inside of the vacuum chamber wetted by this cleaning is quickly dried by injecting drying gas from the drying gas source connected to the supply pipe through the nozzle, making it easy to clean without overhauling the vacuum chamber. You can.
(実施例)
本発明の実施例を、まず、真空蒸着室の洗浄に
適用した場合につき説明するに、第1図に於て1
は下方に蒸発源2と上方にサブストレートの駆動
装置3を備えた真空室、4は該真空室1の隅部に
旋回自在に設けたノズルを示し、該ノズル4には
洗浄液循環装置5から供給管6を介して洗浄流体
が供給される。該洗浄液循環装置5は例えばヒー
タ7を備えた洗浄液タンク8、送り出しポンプ
9、フイルタ10、蒸溜器11、排出ポンプ12
及びN2ガス等の乾燥用ガス源13で構成され、
該洗浄液タンク8に於て蒸溜器11によりアルコ
ールフレオン或はトリクレン等の純度を高めた洗
浄液を作り、これを送り出しポンプ9により圧送
し、フイルタ10で濾過して供給管6へと送る。
この場合ノズル4から真空室1内に噴出した洗浄
液は、その内壁面1aや駆動装置3に付着した蒸
発物質等の塵芥を洗い落とし、下方の排出管14
から排出ポンプ12によりタンク8へと戻すよう
に排除される。その後、ガス源13からノズル4
に乾燥用のガスが供給され、濡れた真空室1内が
迅速に乾燥する。15は真空室1を真空化するに
使用される真空ポンプである。該洗浄液循環装置
5は第2図示のようにフイルタ10と並列にヒー
タを備えたボイラ兼純化装置16を設け、これに
タンク8からの洗浄液を送り、発生した蒸気を供
給管6に洗浄液と共に混合されるようにしてもよ
い。また洗浄液の噴射後に蒸気を噴射してもよ
く、この場合真空室1の内面は急速に乾燥する。
17は排液タンクである。また真空室1をその周
囲に第3図示のように設けたヒータ18で加熱し
乍らノズル4から洗浄液を噴出すればより一層ク
リーンに真空室1内を洗浄することが可能であ
り、かつ急速に乾燥させることが出来る。同図示
のように使用済みの洗浄液を排出管14から排液
タンク17に捨てる形式とするようにしてもよ
い。(Example) First, an example of the present invention will be described in the case where it is applied to cleaning a vacuum deposition chamber.
4 indicates a vacuum chamber equipped with an evaporation source 2 at the bottom and a substrate drive device 3 at the top; 4 indicates a nozzle rotatably provided at a corner of the vacuum chamber 1; Cleaning fluid is supplied via the supply pipe 6. The cleaning liquid circulation device 5 includes, for example, a cleaning liquid tank 8 equipped with a heater 7, a delivery pump 9, a filter 10, a distiller 11, and a discharge pump 12.
and a drying gas source 13 such as N 2 gas,
In the cleaning liquid tank 8, a distiller 11 is used to produce a highly purified cleaning liquid such as alcohol freon or trichlene, which is pumped by a delivery pump 9, filtered by a filter 10, and sent to the supply pipe 6.
In this case, the cleaning liquid spouted into the vacuum chamber 1 from the nozzle 4 washes off dust such as evaporated substances adhering to the inner wall surface 1a and the drive device 3, and removes dust from the discharge pipe 14 below.
from the tank 8 by a discharge pump 12. After that, from the gas source 13 to the nozzle 4
A drying gas is supplied to the vacuum chamber 1, and the wet vacuum chamber 1 is quickly dried. 15 is a vacuum pump used to evacuate the vacuum chamber 1; As shown in the second diagram, the cleaning liquid circulation device 5 is provided with a boiler/purifier 16 equipped with a heater in parallel with the filter 10, to which the cleaning liquid from the tank 8 is sent, and the generated steam is mixed with the cleaning liquid into the supply pipe 6. It is also possible to do so. Further, steam may be injected after the cleaning liquid is injected, and in this case, the inner surface of the vacuum chamber 1 dries rapidly.
17 is a drain tank. Further, by heating the vacuum chamber 1 with a heater 18 provided around it as shown in the third figure, and spouting the cleaning liquid from the nozzle 4, it is possible to clean the inside of the vacuum chamber 1 even more cleanly and rapidly. It can be dried. As shown in the figure, the used cleaning liquid may be disposed of from the discharge pipe 14 into the drain tank 17.
また、第4図はサブストレートを取付けたキヤ
リア20を、バルブ25で区画された仕込室2
1、カソード電極22を備えたスパツタリング室
23及び取出室24を順次通過させる式のスパツ
タ装置に於て各室21,23,24を洗浄する場
合を示し、この場合各室の上方に夫々ノズル4を
設け、洗浄液循環装置5から洗浄液、蒸気混入の
洗浄液、洗浄液の蒸気、乾燥用ガスを供給して洗
浄される。尚、この場合も洗浄液循環装置5に代
え第5図示のように排出管14を排液タンク17
に捨てる非循環形に構成してもよい。26はクラ
イオポンプの排気口を示す。尚、フレオン、アル
コール或はこれらの混合液を洗浄液として使用す
る場合には蒸気液化用に冷却器30が設けられ
る。 In addition, FIG. 4 shows the carrier 20 with the substrate attached to the preparation chamber 2 divided by the valve 25.
1. A case is shown in which each chamber 21, 23, 24 is cleaned in a sputtering device of the type in which the sputtering chamber 23 and the extraction chamber 24 equipped with a cathode electrode 22 are sequentially passed through.In this case, a nozzle 4 is installed above each chamber. A cleaning liquid circulating device 5 supplies a cleaning liquid, a cleaning liquid mixed with steam, the steam of the cleaning liquid, and a drying gas to perform cleaning. In this case as well, instead of the cleaning liquid circulation device 5, the drain pipe 14 is connected to the drain tank 17 as shown in the fifth figure.
It may also be constructed in a non-circulating manner. 26 indicates the exhaust port of the cryopump. Note that when Freon, alcohol, or a mixture thereof is used as the cleaning liquid, a cooler 30 is provided for vapor liquefaction.
(発明の効果)
以上のように本発明によるときは、水分の進入
がタブーとされていた真空室内にノズルを設ける
と共に真空室の底部に排出管を接続し、該ノズル
に接続した供給管、フイルタ及び送り出しポンプ
により洗浄流体を噴出させると共に該ノズルに接
続した乾燥用ガス源から乾燥用ガスを噴出させる
ようにしたので、比較的簡単且つ短時間でオーバ
ーホールすることなく真空室の塵芥数を大幅に減
少するように清掃することが出来、サブストレー
トの不良品率を大きく減少させ得ると共に処理能
率も向上する等の効果がある。(Effects of the Invention) As described above, according to the present invention, a nozzle is provided in a vacuum chamber where entry of moisture is taboo, and a discharge pipe is connected to the bottom of the vacuum chamber, and a supply pipe connected to the nozzle; Cleaning fluid is ejected by the filter and delivery pump, and drying gas is also ejected from the drying gas source connected to the nozzle, making it possible to significantly reduce the amount of dust in the vacuum chamber in a relatively simple and short time without overhauling. This has the effect of significantly reducing the rate of defective substrates and improving processing efficiency.
第1図は本発明の実施例の線図、第2図乃至第
5図は本発明の他の実施例の線図である。
1…真空室、4…ノズル、6…供給管、8…洗
浄液タンク、9…送り出しポンプ、10…フイル
タ、13…乾燥用ガス源、14…排出管。
FIG. 1 is a diagram of an embodiment of the invention, and FIGS. 2 to 5 are diagrams of other embodiments of the invention. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 4... Nozzle, 6... Supply pipe, 8... Cleaning liquid tank, 9... Delivery pump, 10... Filter, 13... Drying gas source, 14... Discharge pipe.
Claims (1)
室内にノズルを設けると共に該真空室の底部に排
出管を接続し、該ノズルに、供給管、フイルタ及
び送り出しポンプを介して洗浄流体を貯えた洗浄
液タンクを接続し、更に該供給管に乾燥用ガス源
を接続したことを特徴とする真空室内クリーニン
グ装置。1. A nozzle is provided in a vacuum chamber connected to a vacuum pump such as a vacuum evaporation chamber, and a discharge pipe is connected to the bottom of the vacuum chamber, and cleaning fluid is stored in the nozzle via a supply pipe, a filter, and a delivery pump. A vacuum chamber cleaning device characterized in that a cleaning liquid tank is connected and a drying gas source is further connected to the supply pipe.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16262483A JPS6055611A (en) | 1983-09-06 | 1983-09-06 | Cleaning method for inside of vacuum chamber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16262483A JPS6055611A (en) | 1983-09-06 | 1983-09-06 | Cleaning method for inside of vacuum chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6055611A JPS6055611A (en) | 1985-03-30 |
JPH0116309B2 true JPH0116309B2 (en) | 1989-03-23 |
Family
ID=15758142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16262483A Granted JPS6055611A (en) | 1983-09-06 | 1983-09-06 | Cleaning method for inside of vacuum chamber |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6055611A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62196367A (en) * | 1986-02-25 | 1987-08-29 | Ulvac Corp | Cleaning device for vacuum treatment vessel |
JPS62205268A (en) * | 1986-03-04 | 1987-09-09 | Ulvac Corp | Device for cleaning vacuum treatment tank |
JPH06272027A (en) * | 1993-03-17 | 1994-09-27 | Fuji Photo Film Co Ltd | Method for automatically cleaning vacuum deposition tank and device therefor |
JP5553898B2 (en) * | 2010-07-13 | 2014-07-16 | 株式会社アルバック | Film forming apparatus and method for cleaning film forming apparatus |
JP6325475B2 (en) * | 2015-03-18 | 2018-05-16 | 株式会社東芝 | Gas recycling apparatus, additive manufacturing apparatus, and additive manufacturing method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS479567U (en) * | 1971-02-26 | 1972-10-04 |
-
1983
- 1983-09-06 JP JP16262483A patent/JPS6055611A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS479567U (en) * | 1971-02-26 | 1972-10-04 |
Also Published As
Publication number | Publication date |
---|---|
JPS6055611A (en) | 1985-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1039506A3 (en) | Apparatus for cleaning and drying substrates | |
JPH10261687A (en) | Production system for semiconductor and the like | |
CN1965388A (en) | Apparatus and method for drying substrates | |
TWI290737B (en) | Apparatus and method for treating a panel | |
US6598314B1 (en) | Method of drying wafers | |
JPH0116309B2 (en) | ||
JP2614196B2 (en) | Method and apparatus for treating a disk-shaped workpiece with a liquid | |
JP2004140373A (en) | Subatmospheric supply of fluorine to semiconductor process chamber | |
JPH0611435B2 (en) | Vacuum cleaning device | |
KR100269416B1 (en) | Wafer treatment apparatus | |
JPH0590239A (en) | Cleaning method and cleaning device | |
JP3108937B2 (en) | Work cleaning method and cleaning device | |
JP3052103B2 (en) | Vacuum degreasing cleaning equipment | |
JP2000124187A (en) | Substrate drying method and substrate dryer | |
KR0176734B1 (en) | High pressure spray etching method and its apparatus | |
JP2003273061A (en) | Treating method and treating system | |
JPH0639330A (en) | Chemical liquid coating device | |
JPS62117689A (en) | Washer for cooling water pipe | |
JPH07169663A (en) | Semiconductor processing device | |
JPH03169012A (en) | Foreign-body removal apparatus of semiconductor substrate | |
JP2000308859A (en) | Treating device and treating method | |
JPS6044025A (en) | Treatment of dry etching exhaust gas | |
JPH0727883B2 (en) | Wafer drying equipment | |
JP2924191B2 (en) | Semiconductor substrate etching equipment | |
JPS63302903A (en) | Device for recovering solvent for cleaning work of metal or the like |