JPH03169012A - Foreign-body removal apparatus of semiconductor substrate - Google Patents
Foreign-body removal apparatus of semiconductor substrateInfo
- Publication number
- JPH03169012A JPH03169012A JP31016789A JP31016789A JPH03169012A JP H03169012 A JPH03169012 A JP H03169012A JP 31016789 A JP31016789 A JP 31016789A JP 31016789 A JP31016789 A JP 31016789A JP H03169012 A JPH03169012 A JP H03169012A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- foreign matter
- chuck
- ultrasonic vibration
- blown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 206010070245 Foreign body Diseases 0.000 title 1
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 239000007788 liquid Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000007921 spray Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体製造装置に関し、特に半導体基板の異
物を除去する半導体基板異物除去装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and more particularly to a semiconductor substrate foreign matter removal device for removing foreign matter from a semiconductor substrate.
従来、この半導体基板上に付着した異物を除去する方法
は、例えば、純水や薬液を溜めた槽の中に、半導体基板
を収納したキャリアを浸し、槽内で振動したり、あるい
は超音波振動を与え、異物を除去したり、または、半導
体基板を吸着した支持体を回転させながらこの半導体基
板表面に液体を滴下し、回転するブラシにて異物を除去
する方法が用いられてきた。Conventionally, methods for removing foreign matter adhering to semiconductor substrates include, for example, immersing a carrier containing a semiconductor substrate in a tank containing pure water or a chemical solution and vibrating it in the tank, or using ultrasonic vibration. A method has been used in which a liquid is dripped onto the surface of the semiconductor substrate while rotating a support holding a semiconductor substrate to remove the foreign matter, and a rotating brush is used to remove the foreign matter.
第３図は従来の半導体基板異物除去装置の一例を説明す
るための概略を示す図である。従来、この種の半導体基
板異物除去装置は、同図に示すように、半導体基板３を
吸着し固定するとともに高速回転するチャック１２と、
半導体基板３に洗浄液である液体９を滴下する供給管１
１と、回転する半導体基板３の表面を拭く回転ブラシ１
０とで構成されている。このような装置を用いて、半導
体基板３に付着していた異物を機械的に拭き取り除去し
ていた。FIG. 3 is a diagram schematically showing an example of a conventional semiconductor substrate foreign matter removal apparatus. Conventionally, this type of semiconductor substrate foreign matter removal apparatus has a chuck 12 that attracts and fixes the semiconductor substrate 3 and rotates at high speed, as shown in the figure.
A supply pipe 1 that drips a liquid 9 that is a cleaning liquid onto a semiconductor substrate 3
1 and a rotating brush 1 for wiping the surface of the rotating semiconductor substrate 3
It consists of 0. Using such a device, foreign matter adhering to the semiconductor substrate 3 has been mechanically wiped off and removed.
上述した従来の半導体基板異物除去装置では、異物を除
去するのに、液体を使用したり、回転ブラシで半導体基
板をブラッシングを行なうため、半導体基板にホトエッ
チング用のレジストが付いている場合には使用出来ない
などの適用される工程により限定されるという欠点があ
る。The conventional semiconductor substrate foreign matter removal apparatus described above uses liquid or brushes the semiconductor substrate with a rotating brush to remove foreign matter, so if the semiconductor substrate has a resist for photoetching, It has the disadvantage that it cannot be used or is limited by the process to which it is applied.
また、液体の使用により装置が大型になり、液体を除去
させる動作ｉ楕や、乾燥させる工程が必要になるという
欠点がある。Furthermore, the use of liquid increases the size of the apparatus, and there are disadvantages in that a process for removing the liquid and a drying process are required.
本発明の目的は、かかる欠点を解消し、小型で、かつ乾
燥工程を必要としない半導体基板異物除去装置を提供す
ることである。SUMMARY OF THE INVENTION An object of the present invention is to eliminate such drawbacks and provide a semiconductor substrate foreign matter removal apparatus that is small and does not require a drying process.
本発明の半導体基板異物除去装置は、半導体基板を吸着
するとともに超音波振動を伝達し、かつ、高速回転する
チャックと、前記半導体基板表面にイオン化した粒子を
含む空気を噴射するノズルとを有している。The semiconductor substrate foreign matter removal apparatus of the present invention includes a chuck that attracts a semiconductor substrate, transmits ultrasonic vibrations, and rotates at high speed, and a nozzle that injects air containing ionized particles onto the surface of the semiconductor substrate. ing.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は、本発明の一実施例を示す半導体基板異物除去
装置の概略図、第２図は第１図の一部を示す平面図であ
る。この半導体基板異物除去装置は、半導体基板３に超
音波振動をチャック４を介して与える超音波振動装Ｗ５
と、半導体基板３の表面をイオン化された空気を浴びせ
るイオン化エア噴射ノズル２と、このエア噴射ノズル２
に並べて配置された高圧エア噴射ノズル８と、飛散する
異物を吸引するダクト１とを設けたことである。FIG. 1 is a schematic diagram of a semiconductor substrate foreign matter removal apparatus showing an embodiment of the present invention, and FIG. 2 is a plan view showing a part of FIG. 1. This semiconductor substrate foreign matter removal device includes an ultrasonic vibrator W5 that applies ultrasonic vibration to the semiconductor substrate 3 via a chuck 4.
, an ionized air injection nozzle 2 that sprays ionized air onto the surface of the semiconductor substrate 3, and this air injection nozzle 2.
This is achieved by providing high-pressure air injection nozzles 8 arranged in parallel with each other, and a duct 1 for sucking the flying foreign matter.
この半導体基板異物除去装置の動作は、まず、未洗浄の
半導体基板３をチャック４の面に搭載する。次に、真空
排気装置（図示せず）が動作し、チャック４面にある細
孔を通じ半導体基板３とチャック４の面との間の空気を
排気することにより、チャック４の面に半導体基板３を
固定する。In the operation of this semiconductor substrate foreign matter removing apparatus, first, an uncleaned semiconductor substrate 3 is mounted on the surface of the chuck 4. Next, a vacuum evacuation device (not shown) operates to exhaust the air between the semiconductor substrate 3 and the surface of the chuck 4 through the pores on the surface of the chuck 4, thereby causing the semiconductor substrate 3 to be exposed to the surface of the chuck 4. to be fixed.
次に、モータ６が回転すると同時に超音波振動装置５が
作動し、半導体基板３は回転するとともに超音波振動が
伝えられる。Next, at the same time as the motor 6 rotates, the ultrasonic vibration device 5 is activated, and the semiconductor substrate 3 is rotated and ultrasonic vibrations are transmitted thereto.
一方、この動作とともに、装置外にあるレザーバに停留
する空気に高圧が印加され、この放電により、イオンを
．発生し、イオンエア噴射、ノズル２により、半導体基
板３表面にイオン分子を吹きつける。さらに、これと同
時に高圧エア噴射ノズル８の噴射口８ａより乾燥空気を
半導体基板上に吹き付ける。これにより、半導体基板３
上の異物は、イオン分子と結合し、一つの分子を結合し
、乾燥空気により吹き飛ばされる。また、この高圧エア
噴射ノズル８と対向して取付けられたダクト］で、残り
の異物は吸い込まれ、機外に排出される。Meanwhile, along with this operation, high pressure is applied to the air remaining in the reservoir outside the device, and this discharge causes ions to be released. The ion air is generated and the nozzle 2 sprays ion molecules onto the surface of the semiconductor substrate 3. Furthermore, at the same time, dry air is blown onto the semiconductor substrate from the injection port 8a of the high-pressure air injection nozzle 8. As a result, the semiconductor substrate 3
The foreign particles on top combine with ionic molecules, combine into one molecule, and are blown away by dry air. Further, the remaining foreign matter is sucked in by a duct installed opposite to the high-pressure air injection nozzle 8 and discharged outside the machine.
なお、図面には示さないが、高圧エア噴射ノズルは、そ
の噴射口の向きを変えることが出来、イオン化されても
、大きい異物は、圧縮された空気で吹き飛ばされるよう
に、高圧エア噴射ノズルである管は回転させることが可
能である。このように微細な異物は、イオン化してダク
トで吸引し、大きな異物は高圧空気で吹き飛ばすように
したので、従来の湿式洗浄機に比べ、短時間で、洗浄出
来るという利点がある。Although not shown in the drawing, the high-pressure air injection nozzle can change the direction of its injection port, and even if it is ionized, the high-pressure air injection nozzle will blow away large foreign objects with compressed air. Some tubes can be rotated. In this way, fine foreign matter is ionized and sucked in by a duct, while large foreign matter is blown away with high-pressure air, which has the advantage of cleaning in a shorter time than conventional wet cleaning machines.
以上説明したように本発明は、半導体基板に付着した比
較的に大きな異物を吹き飛ばす高圧エア噴射ノズルと、
半導体基板上のとれにくい異物をＸ！ｉ！離させる超音
波振動装置を設け、さらに微小な異物をイオン化させる
イオン化エア噴射ノズルを設けることによって、洗浄槽
のような大型設備が不要で、小型で乾燥装置が不要な半
導体異物除去装置が得られるという効果がある。As explained above, the present invention includes a high-pressure air injection nozzle that blows off relatively large foreign matter attached to a semiconductor substrate;
Remove foreign particles that are difficult to remove from semiconductor substrates! i! By providing an ultrasonic vibration device that separates the particles and an ionized air injection nozzle that ionizes minute foreign particles, it is possible to obtain a semiconductor foreign particle removal device that does not require large equipment such as a cleaning tank and is small and does not require a drying device. There is an effect.
第１図は本発明の一実施例を示す半導体基板異物除去装
置の概略図、第２図は第１図の一部を示す平面図、第３
図は従来の一例を示す半導体基板異物除去装置の概略図
である。
１・・・ダクト、２・・・イオン化エア噴射ノズル、３
・・・半導体基板、４・・・チャック、５・・・超音波
振動装置、６・・・モータ、７・・・カップリング、８
・・・高圧エア噴射ノズル、８ａ・・・噴射口、９・・
・液体、１０・・・回転ブラシ、１１・・・供給管。FIG. 1 is a schematic diagram of a semiconductor substrate foreign matter removal apparatus showing one embodiment of the present invention, FIG. 2 is a plan view showing a part of FIG. 1, and FIG.
The figure is a schematic diagram of a conventional semiconductor substrate foreign matter removal apparatus. 1... Duct, 2... Ionized air injection nozzle, 3
... Semiconductor substrate, 4... Chuck, 5... Ultrasonic vibrator, 6... Motor, 7... Coupling, 8
...High pressure air injection nozzle, 8a...Injection port, 9...
-Liquid, 10... Rotating brush, 11... Supply pipe.
Claims (1)
かつ、高速回転するチャックと、前記半導体基板表面に
イオン化した粒子を含む空気を噴射するノズルとを有す
ることを特徴とする半導体基板異物除去装置。It absorbs semiconductor substrates and transmits ultrasonic vibrations,
A device for removing foreign matter from a semiconductor substrate, comprising: a chuck that rotates at high speed; and a nozzle that injects air containing ionized particles onto the surface of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31016789A JPH03169012A (en) | 1989-11-28 | 1989-11-28 | Foreign-body removal apparatus of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31016789A JPH03169012A (en) | 1989-11-28 | 1989-11-28 | Foreign-body removal apparatus of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03169012A true JPH03169012A (en) | 1991-07-22 |
Family
ID=18001972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31016789A Pending JPH03169012A (en) | 1989-11-28 | 1989-11-28 | Foreign-body removal apparatus of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03169012A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995015006A1 (en) * | 1993-11-22 | 1995-06-01 | Tadahiro Ohmi | Washing apparatus, semiconductor production apparatus and semiconductor production line |
| EP0664558A1 (en) * | 1992-10-05 | 1995-07-26 | OHMI, Tadahiro | Method for drying wafer |
| JP2002335074A (en) * | 2001-05-09 | 2002-11-22 | Denpuro:Kk | Automatic soldering apparatus |
| US6766813B1 (en) * | 2000-08-01 | 2004-07-27 | Board Of Regents, The University Of Texas System | Apparatus and method for cleaning a wafer |
-
1989
- 1989-11-28 JP JP31016789A patent/JPH03169012A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0664558A1 (en) * | 1992-10-05 | 1995-07-26 | OHMI, Tadahiro | Method for drying wafer |
| EP0664558A4 (en) * | 1992-10-05 | 1997-02-19 | Tadahiro Ohmi | Method for drying wafer. |
| WO1995015006A1 (en) * | 1993-11-22 | 1995-06-01 | Tadahiro Ohmi | Washing apparatus, semiconductor production apparatus and semiconductor production line |
| US6766813B1 (en) * | 2000-08-01 | 2004-07-27 | Board Of Regents, The University Of Texas System | Apparatus and method for cleaning a wafer |
| JP2002335074A (en) * | 2001-05-09 | 2002-11-22 | Denpuro:Kk | Automatic soldering apparatus |
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