JPH01156472A - Method for heating substrate - Google Patents
Method for heating substrateInfo
- Publication number
- JPH01156472A JPH01156472A JP31477187A JP31477187A JPH01156472A JP H01156472 A JPH01156472 A JP H01156472A JP 31477187 A JP31477187 A JP 31477187A JP 31477187 A JP31477187 A JP 31477187A JP H01156472 A JPH01156472 A JP H01156472A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- recess
- gas exhaust
- block heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000010438 heat treatment Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 70
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 229910052786 argon Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 150000001485 argon Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
基板にスパッタを行なうに際し該基板をガスアシストに
よるブロックヒータにより加熱する基板の加熱方法に関
し、
スパッタを行なう基板の加熱を行なうガスアシストによ
るブロックヒータにガス排気孔を設けて基板の加熱ムラ
を解消することを目的とし、基板を加熱して該基板にス
パッタを行なう基板の加熱方法であって、前記基板を加
熱するブロックヒータの一方の端部に凹部を形成し、該
凹部に複数のガス供給孔を設けるとともに、前記凹部の
外周方向の外側に前記ブロックヒータの周囲を若干列し
てガス排気溝を形成し、該ガス排気溝は前記凹部に連通
し、該連通部に傾斜を形成して、前記ガス排気溝に複数
のガス排気孔を設けたブロックヒータの、凹部側に基板
を当接してガスの給排気を行ないながら基板を加熱する
構成である。[Detailed Description of the Invention] [Summary] Regarding a substrate heating method in which a substrate is heated by a gas-assisted block heater when performing sputtering on the substrate, gas exhaust is applied to the gas-assisted block heater that heats the substrate to be sputtered. A substrate heating method in which a hole is provided to eliminate uneven heating of the substrate, and the substrate is heated to perform sputtering on the substrate, and the method includes forming a recess at one end of a block heater that heats the substrate. A plurality of gas supply holes are provided in the recess, and a gas exhaust groove is formed slightly in line around the block heater on the outer circumferential side of the recess, and the gas exhaust groove communicates with the recess. , the communication portion is inclined, and the gas exhaust groove is provided with a plurality of gas exhaust holes, and the substrate is brought into contact with the concave portion side of the block heater to heat the substrate while supplying and exhausting gas. .
本発明は、比較的薄い基板にスパッタを行なう基板の加
熱方法に関する。The present invention relates to a method of heating a substrate for sputtering a relatively thin substrate.
半導体産業や電子部品産業等幅広い分野において、高度
の機能を持った薄膜型デバイス製作への要求や、高性能
の被膜形成への要求が強まっている。これらの要求に応
えるために比較的低い温度での製造技術が重要となって
おり、これらの一方法としてガスアシストによるブロッ
クヒータにより基板を加熱する方法が多用されているが
、このブロックヒータはガスの排気の関係上基板に温度
ムラができ高品質のデバイスの製造に難点があるので、
基板を均等に加熱でき、処理室内に流入させるガスと区
別を可能にした基板の加熱方法の改善が望まれている。In a wide range of fields such as the semiconductor industry and the electronic component industry, there is an increasing demand for the production of thin-film devices with advanced functions and for the formation of high-performance films. In order to meet these demands, manufacturing technology at relatively low temperatures has become important, and one method that is often used is to heat the substrate with a gas-assisted block heater. Due to the exhaust air, temperature unevenness can occur on the board, making it difficult to manufacture high-quality devices.
There is a desire for an improved method of heating a substrate that allows the substrate to be heated evenly and to be distinguished from the gas flowing into the processing chamber.
第３図は、従来の基板の加熱方法を説明する図で、同図
（ａ）は側断面図、（ｂ）はブロックヒータの平面図、
（Ｃ）は基板とブロックヒータの当接部の拡大断面図で
ある。FIG. 3 is a diagram explaining a conventional substrate heating method, in which (a) is a side sectional view, (b) is a plan view of the block heater,
(C) is an enlarged cross-sectional view of the contact portion between the substrate and the block heater.
図において、ステンレス鋼等からなり一方の面に凹部２
１を形成し、該凹部２１内に複数（図面では８個を示す
）のガス供給孔２２を設け、図示しないヒータを内蔵し
たブロックヒータ２の、凹部２１を形成した側に基板１
を当接して前記ガス供給孔２２からたとえばアルゴン（
Ａｒ）ガスを供給すると、該アルゴンガスはブロックヒ
ータ２によって加熱され、該加熱されたアルゴンガスは
凹部２１で拡散して基板１を加熱し、この状態で基板１
の他の面に薄膜等をスパッタして膜を形成する。In the figure, it is made of stainless steel, etc. and has a recess 2 on one side.
A substrate 1 is formed on the side where the recess 21 is formed of a block heater 2 which has a plurality of gas supply holes 22 (eight shown in the drawing) in the recess 21 and has a built-in heater (not shown).
For example, argon (
When Ar) gas is supplied, the argon gas is heated by the block heater 2, the heated argon gas is diffused in the recess 21 and heats the substrate 1, and in this state, the substrate 1 is heated.
A film is formed by sputtering a thin film or the like on the other surface of the substrate.
そうして、基板１を加熱したアルゴンガスは、第３図（
Ｃ）に示すように基板１とブロックヒータ２の表面粗さ
（この表面粗さをなくすることは不可能である。）の間
隙から図示しないチャンバー内に排出する。Then, the argon gas that heated the substrate 1 is heated as shown in Fig. 3 (
As shown in C), the liquid is discharged into a chamber (not shown) through the gap between the substrate 1 and the block heater 2, which have rough surfaces (this surface roughness cannot be eliminated).
上記従来の基板の加熱方法にあっては、加熱ガスはチャ
ンバーに排出されるので、この加熱ガスはチャンバー内
のガスと同種のものを使用しなければならないという制
約を受ける問題があり、且つこのガスの排出が基板とブ
ロックヒータの表面粗さの間隙に依存するので、その排
出が均等ではなく基板加熱にムラができスパッタ膜にス
トレスや、カバレンジ・膜質の分布に悪影響を及ぼすと
いう問題点があった。In the conventional substrate heating method described above, since the heating gas is discharged into the chamber, there is a problem in that the heating gas must be of the same type as the gas in the chamber, and this Since the gas discharge depends on the gap between the surface roughness of the substrate and the block heater, the gas discharge is not uniform and the substrate heating is uneven, which causes stress on the sputtered film and adversely affects the coverage and film quality distribution. there were.
本発明は、上記の問題点を解決してプロ・ツクヒータに
ガス排気孔を設けたガス排気溝を形成して供給ガス圧を
制御できるようにして基板の加熱ムラを解消した基板の
加熱方法を提供するものである。The present invention solves the above-mentioned problems and provides a method for heating a substrate, which eliminates uneven heating of the substrate by forming a gas exhaust groove with a gas exhaust hole in the professional heater and controlling the supply gas pressure. This is what we provide.
すなわち、基板を加熱して該基板にスパッタを行なう基
板の加熱方法であって、前記基板を加熱するブロックヒ
ータの一方の端部に凹部を形成し、該凹部に複数のガス
供給孔を設けるとともに、前記凹部の円周方向の外側に
前記ブロックヒータの周囲を若干列してガス排気溝を形
成し、該ガス排気溝は前記凹部に連通し、該連通部に傾
斜を形成して、前記ガス排気溝に複数のガス排気孔を設
けたブロックヒータの、凹部側に基板を当接してガスの
給排気を行ないながら基板を加熱することによって解決
される。That is, a method for heating a substrate in which sputtering is performed on the substrate by heating the substrate, the method includes forming a recess at one end of a block heater that heats the substrate, providing a plurality of gas supply holes in the recess, and , a gas exhaust groove is formed by slightly arranging the periphery of the block heater on the outside of the recess in the circumferential direction, the gas exhaust groove communicates with the recess, and the communication portion is sloped so that the gas This problem can be solved by heating the substrate while supplying and exhausting gas by abutting the substrate against the concave side of a block heater having a plurality of gas exhaust holes in the exhaust groove.
このようにしたことによって、加熱ガスの排気が均等に
行なわれ、したがって基板の加熱ムラが解消できるので
、良好な薄膜を形成することができる。By doing this, the heated gas is discharged evenly, and uneven heating of the substrate can therefore be eliminated, so that a good thin film can be formed.
第１図は、本発明の一実施例を説明する図で、同図（ａ
ｌは側断面図、（ｂ）はブロックヒータの平面図で、第
３図と同等の部分については同一符号を付している。FIG. 1 is a diagram illustrating an embodiment of the present invention.
1 is a side sectional view, (b) is a plan view of the block heater, and parts equivalent to those in FIG. 3 are given the same reference numerals.
図において、ステンレス鋼等からなるブロックヒータ３
の一方の面に凹部３１を形成し、該凹部３１内に複数（
図面では８個を示す）のガス供給孔３２を設けるととも
に、前記凹部３１の円周方向の外側に前記ブロックヒー
タ３の周囲を若干残してガス排気溝３４を形成し、該ガ
ス排気：ａ３４は前記凹部３１に連通せしめガスの流れ
を良好にするための傾斜３３を形成して、前記ガス排気
溝３４に複数（図面では８個を示す）のガス排気孔３５
を設は図示しないヒータを内蔵したブロックヒータ３の
、凹部３１を形成した側に基板１を当接して前記ガス供
給孔３２からたとえばアルゴン（Ａｒ）ガスを供給する
。In the figure, a block heater 3 made of stainless steel etc.
A recess 31 is formed in one surface of the recess 31, and a plurality of (
In addition to providing gas supply holes 32 (eight holes are shown in the drawing), a gas exhaust groove 34 is formed on the outside of the recess 31 in the circumferential direction, leaving a slight area around the block heater 3, and the gas exhaust: a34 is A plurality of gas exhaust holes 35 (eight holes are shown in the drawing) are formed in the gas exhaust groove 34 by forming a slope 33 to communicate with the recess 31 and improve gas flow.
For example, argon (Ar) gas, for example, is supplied from the gas supply hole 32 by bringing the substrate 1 into contact with the side on which the recess 31 is formed of the block heater 3 incorporating a heater (not shown).
このアルゴンガスはブロックヒータ３によって加熱され
、該加熱されたアルゴンガスは凹部３１で拡散して基板
１を加熱し、この状態で基板１の他の面に薄膜等をスパ
ッタして膜を形成する。This argon gas is heated by the block heater 3, and the heated argon gas is diffused in the recess 31 to heat the substrate 1. In this state, a thin film or the like is sputtered on the other surface of the substrate 1 to form a film. .
そうして、基板１を加熱したアルゴンガスは、強制排気
によりガス排気溝３４を介してガス排気孔３５から排気
される。The argon gas that has heated the substrate 1 is then forced to exhaust through the gas exhaust hole 35 through the gas exhaust groove 34.
第２図は、本発明の他の実施例を説明する図で、同図（
ａ）は側断面図、 （ｂ）はブロックヒータの平面図で
、第１図と同等の部分については同一符号を付している
。FIG. 2 is a diagram for explaining another embodiment of the present invention.
(a) is a side sectional view, (b) is a plan view of the block heater, and parts equivalent to those in FIG. 1 are given the same reference numerals.
図において、ステンレス鋼等からなるブロックヒータ４
の一方の面に凹部４１を形成し、該凹部４１内に複数（
図面では８個を示す）のガス供給孔４２を設けるととも
に、前記凹部４１の円周方向の外側にガス排気溝４４を
形成し、該ガス排気溝４４は前記凹部４１に連通せしめ
ガスの流れを良好にするための傾斜４３を形成して、前
記ガス排気溝４４に複数（図面では８個を示す）のガス
排気孔４５を設け、さらに前記排気溝４４とブロックヒ
ータ４の外周間に一辺に傾斜を形成したガス排気溝（４
６，４７）を形成し、該ガス排気溝（４６）に複数（図
面では１２個を示す）のガス排気溝４８を設け、ガス排
気溝（４７）に複数（図面では１６個を示す）のガス排
気溝４９を設けた図示しないヒータを内蔵したブロック
ヒータ４の、凹部４１を形成した側に基板１を当接して
前記ガス供給孔４２からたとえばアルゴン（Ａｒ）ガス
を供給する。In the figure, a block heater 4 made of stainless steel or the like is shown.
A recess 41 is formed in one surface of the recess 41, and a plurality of (
In addition, a gas exhaust groove 44 is formed on the outside of the recess 41 in the circumferential direction, and the gas exhaust groove 44 communicates with the recess 41 to control the flow of gas. A plurality of gas exhaust holes 45 (eight holes are shown in the drawing) are formed in the gas exhaust groove 44 by forming an inclination 43 for better performance, and a plurality of gas exhaust holes 45 are provided in the gas exhaust groove 44 on one side between the exhaust groove 44 and the outer periphery of the block heater 4. Slanted gas exhaust groove (4
6, 47), a plurality of gas exhaust grooves 48 (12 shown in the drawing) are provided in the gas exhaust groove (46), and a plurality (16 shown in the drawing) are provided in the gas exhaust groove (47). The substrate 1 is brought into contact with the side on which the recess 41 is formed of the block heater 4 incorporating a heater (not shown) provided with a gas exhaust groove 49, and argon (Ar) gas, for example, is supplied from the gas supply hole 42.
このアルゴンガスはブロックヒータ４によって加熱され
、該加熱されたアルゴンガスは凹部４１で拡散して基板
１を加熱し、この状態で基板１の他の面にチタンナイト
ライド等をスパッタして膜を形成する。This argon gas is heated by the block heater 4, and the heated argon gas diffuses in the recess 41 to heat the substrate 1. In this state, titanium nitride or the like is sputtered onto the other surface of the substrate 1 to form a film. Form.
そうして、基板１を加熱したアルゴンガスは、強制排気
によりガス排気溝４４を介してガス排気孔４５から排気
されるが、基板１とブロックヒータ４の当接面の表面粗
さによる間隙に入ったガスは排気溝４６．４７を介して
排気孔４８．４９から強制排気される。このガス排気溝
４６．４７はブロックヒータ４の外（チャンバー内）へ
のガス流出を防ぐために多く設けることが好ましく、ガ
ス排気孔４８．４９は外周はど孔径を小さくし数を増加
すればガス流出の防止に一層効果がある。Then, the argon gas that heated the substrate 1 is forced to exhaust through the gas exhaust hole 45 through the gas exhaust groove 44. The gas that has entered is forcibly exhausted from exhaust holes 48, 49 via exhaust grooves 46, 47. It is preferable to provide a large number of these gas exhaust grooves 46, 47 to prevent gas from flowing out of the block heater 4 (into the chamber). It is more effective in preventing leakage.
このようにした基板の加熱方法は、ブロックヒータによ
り加熱されたガスが排気溝および排気孔を設けたことに
より、基板を均等に加熱する。In this method of heating a substrate, the gas heated by the block heater uniformly heats the substrate by providing an exhaust groove and an exhaust hole.
以上の説明から明らかなように、本発明によれば基板の
加熱ムラが解消し−様な熱エネルギーを基板に与えるの
でスバフタ膜の品質向上に有効であり、しかもチャンバ
ーにアシストガスと異なるガスが使用できる利点がある
。As is clear from the above explanation, according to the present invention, uneven heating of the substrate is eliminated, and the present invention provides a similar thermal energy to the substrate, which is effective in improving the quality of the buffed film. There are advantages to using it.
第１図は、本発明の一実施例を説明する図で、同図ｆａ
）は側断面図、（ｂ）はブロックヒータの平面図、第２
図は、本発明の他の実施例を説明する図で、同図（ａｌ
は側断面図、（ｂ）はブロックヒータの平面図、第３図
は、従来の基板の加熱方法を説明する図で、同図（ａ）
は側断面図、（ｂ）はブロックヒータの平面図、（Ｃ）
は基板とブロックヒータの当接部の拡大断面図である。
図において、１は基板、２，３．４はブロックヒータ、
２１．３１．４１は凹部、２２．３２．４２はガス供給
孔、３３．４３は傾斜、３４．４４，４６．４７はガス
排気溝、３５．４５゜４８、４９はガス排気孔、をそれ
ぞれ示す。
↓ ｔ ｔ！
；
也
４訂FIG. 1 is a diagram illustrating an embodiment of the present invention.
) is a side sectional view, (b) is a plan view of the block heater,
The figure is a diagram for explaining another embodiment of the present invention.
3 is a side sectional view, (b) is a plan view of the block heater, and FIG. 3 is a diagram explaining a conventional substrate heating method.
is a side sectional view, (b) is a plan view of the block heater, (C) is a side sectional view.
is an enlarged cross-sectional view of the contact portion between the substrate and the block heater. In the figure, 1 is a substrate, 2, 3.4 is a block heater,
21.31.41 is a recess, 22.32.42 is a gas supply hole, 33.43 is an inclination, 34.44, 46.47 is a gas exhaust groove, 35.45°48, 49 is a gas exhaust hole, respectively. show. ↓ t t! ; 4th edition
Claims (2)
加熱方法であって、 前記基板（１）を加熱するブロックヒータ（３）の一方
の端部に凹部（３１）を形成し、該凹部（３１）に複数
のガス供給孔（３２）を設けるとともに、前記凹部（３
１）の円周方向の外側に前記ブロックヒータ（３）の周
囲を若干残してガス排気溝（３４）を形成し、該ガス排
気溝（３４）は前記凹部（３１）に連通し、該連通部に
傾斜（３３）を形成して、前記ガス排気溝（３４）に複
数のガス排気孔（３５）を設けたブロックヒータ（３）
の、凹部（３１）側に基板（１）を当接してガスの給排
気を行ないながら基板を加熱することを特徴とする基板
の加熱方法。(1) A method for heating a substrate in which sputtering is performed on the substrate by heating the substrate, the method comprising: forming a recess (31) at one end of a block heater (3) that heats the substrate (1); A plurality of gas supply holes (32) are provided in the recess (31), and a plurality of gas supply holes (32) are provided in the recess (31).
1), a gas exhaust groove (34) is formed leaving a little space around the block heater (3), and the gas exhaust groove (34) communicates with the recess (31). A block heater (3) in which a slope (33) is formed in the part and a plurality of gas exhaust holes (35) are provided in the gas exhaust groove (34).
A method for heating a substrate, characterized in that the substrate (1) is brought into contact with the concave portion (31) side and the substrate is heated while supplying and exhausting gas.
を形成し、該凹部（４１）に複数のガス供給孔（４２）
を設けるとともに、前記凹部（４１）の外周で前記ブロ
ックヒータ（４）の周囲を若干残してガス排気溝（４４
）を形成して、該ガス排気溝（４４）は前記凹部（４１
）に連し、該連通部に傾斜（４３）を形成して、前記ガ
ス排気溝（４４）に複数のガス排気孔（４５）を設ける
とともに、該ガス排気溝（４４）の円周方向の外側に複
数のガス排気孔（４８、４９）を穿設した一辺に傾斜を
有する複数のガス排気溝（４６、４７）を形成したブロ
ックヒータ（４）の、凹部（４１）側に基板（１）を当
接してガスの給排気を行ないながら基板を加熱すること
を特徴とする特許請求の範囲第（１）頂に記載の基板の
加熱方法。(2) A recess (41) at one end of the block heater
A plurality of gas supply holes (42) are formed in the recess (41).
At the same time, a gas exhaust groove (44) is provided on the outer periphery of the recess (41), leaving a slight area around the block heater (4).
), and the gas exhaust groove (44) is connected to the recess (41).
), a slope (43) is formed in the communication portion, a plurality of gas exhaust holes (45) are provided in the gas exhaust groove (44), and a plurality of gas exhaust holes (45) are formed in the gas exhaust groove (44) in the circumferential direction. A substrate ( 1 2. A method of heating a substrate according to claim 1, characterized in that the substrate is heated while supplying and exhausting gas by contacting the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31477187A JPH01156472A (en) | 1987-12-10 | 1987-12-10 | Method for heating substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31477187A JPH01156472A (en) | 1987-12-10 | 1987-12-10 | Method for heating substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01156472A true JPH01156472A (en) | 1989-06-20 |
Family
ID=18057390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31477187A Pending JPH01156472A (en) | 1987-12-10 | 1987-12-10 | Method for heating substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01156472A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013542324A (en) * | 2010-10-05 | 2013-11-21 | シュヴァルツ，エーファ | Work processing method and furnace |
-
1987
- 1987-12-10 JP JP31477187A patent/JPH01156472A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013542324A (en) * | 2010-10-05 | 2013-11-21 | シュヴァルツ，エーファ | Work processing method and furnace |
| US9840748B2 (en) | 2010-10-05 | 2017-12-12 | Schwartz Gmbh | Process and furnace for treating workpieces |
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