JP7504537B2 - ウェーハの研削方法 - Google Patents
ウェーハの研削方法 Download PDFInfo
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- JP7504537B2 JP7504537B2 JP2019164154A JP2019164154A JP7504537B2 JP 7504537 B2 JP7504537 B2 JP 7504537B2 JP 2019164154 A JP2019164154 A JP 2019164154A JP 2019164154 A JP2019164154 A JP 2019164154A JP 7504537 B2 JP7504537 B2 JP 7504537B2
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 202
- 230000004888 barrier function Effects 0.000 description 11
- 239000012530 fluid Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Description
11a 表面(第1面)
11b 裏面(第2面)
11c オリエンテーションフラット(切り欠き部)
11d 研削痕(ソーマーク)
11e 近傍領域
10 研削装置
12 チャックテーブル(保持テーブル)
12a 保持面
12b 研削痕(ソーマーク)
12c 近傍領域
14 基台(本体部)
14a 上面
16 吸引部
16a 上面
16b 切り欠き部(第1切り欠き部)
18 枠部
18a 上面
18b 切り欠き部(第2切り欠き部)
18c バリア部
20 研削ユニット
22 ハウジング
24 スピンドル
26 マウント
28 研削ホイール
30 ホイール基台
32 研削砥石
Claims (3)
- 結晶方位を示すオリエンテーションフラットが形成されたウェーハをチャックテーブルの保持面で保持して研削するウェーハの研削方法であって、
該チャックテーブルは、基台と、該オリエンテーションフラットに対応する第1切り欠き部を有し該ウェーハを吸引する吸引部と、該吸引部を囲繞し該第1切り欠き部に沿う第2切り欠き部を有する枠部と、を備え、
該吸引部及び該枠部は、該基台の上面から突出するように設けられ、
該チャックテーブルと、研削砥石を有する研削ホイールとを回転させ、該吸引部の上面と該枠部の上面とによって構成される該保持面を該研削砥石で研削する保持面研削ステップと、
該オリエンテーションフラットと該第1切り欠き部及び該第2切り欠き部との位置を合わせつつ、該研削砥石によって研削された該保持面で該ウェーハを保持する保持ステップと、
該保持面で保持された該ウェーハを該研削砥石で研削するウェーハ研削ステップと、を備えることを特徴とするウェーハの研削方法。 - 該枠部の該第1切り欠き部に沿って形成された領域の幅は、該枠部の他の領域の幅と異なることを特徴とする請求項1記載のウェーハの研削方法。
- 結晶方位を示すオリエンテーションフラットが形成されたウェーハをチャックテーブルの保持面で保持して研削するウェーハの研削方法であって、
該チャックテーブルは、該オリエンテーションフラットに対応する第1切り欠き部を有し該ウェーハを吸引する吸引部と、該吸引部を囲繞し該第1切り欠き部に沿う第2切り欠き部を有する枠部と、を備え、
該吸引部及び該枠部の材質は、該ウェーハの材質と同一であり、
該チャックテーブルと、研削砥石を有する研削ホイールとを回転させ、該吸引部の上面と該枠部の上面とによって構成される該保持面を該研削砥石で研削する保持面研削ステップと、
該オリエンテーションフラットと該第1切り欠き部及び該第2切り欠き部との位置を合わせつつ、該研削砥石によって研削された該保持面で該ウェーハを保持する保持ステップと、
該保持面で保持された該ウェーハを該研削砥石で研削するウェーハ研削ステップと、を備えることを特徴とするウェーハの研削方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019164154A JP7504537B2 (ja) | 2019-09-10 | 2019-09-10 | ウェーハの研削方法 |
TW109128292A TW202111798A (zh) | 2019-09-10 | 2020-08-19 | 晶圓之磨削方法 |
SG10202008559QA SG10202008559QA (en) | 2019-09-10 | 2020-09-03 | Wafer grinding method |
US17/010,991 US11482407B2 (en) | 2019-09-10 | 2020-09-03 | Wafer grinding method |
KR1020200113893A KR20210030877A (ko) | 2019-09-10 | 2020-09-07 | 웨이퍼의 연삭 방법 |
CN202010934172.1A CN112548844B (zh) | 2019-09-10 | 2020-09-08 | 晶片的磨削方法 |
DE102020211312.2A DE102020211312A1 (de) | 2019-09-10 | 2020-09-09 | Waferschleifverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019164154A JP7504537B2 (ja) | 2019-09-10 | 2019-09-10 | ウェーハの研削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021044330A JP2021044330A (ja) | 2021-03-18 |
JP7504537B2 true JP7504537B2 (ja) | 2024-06-24 |
Family
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JP2019164154A Active JP7504537B2 (ja) | 2019-09-10 | 2019-09-10 | ウェーハの研削方法 |
Country Status (7)
Country | Link |
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US (1) | US11482407B2 (ja) |
JP (1) | JP7504537B2 (ja) |
KR (1) | KR20210030877A (ja) |
CN (1) | CN112548844B (ja) |
DE (1) | DE102020211312A1 (ja) |
SG (1) | SG10202008559QA (ja) |
TW (1) | TW202111798A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2022147551A (ja) * | 2021-03-23 | 2022-10-06 | 株式会社東京精密 | 加工装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008060470A (ja) | 2006-09-01 | 2008-03-13 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012134275A (ja) | 2010-12-21 | 2012-07-12 | Disco Abrasive Syst Ltd | 研削装置 |
JP2013094913A (ja) | 2011-11-02 | 2013-05-20 | Disco Corp | 加工装置 |
JP2016132071A (ja) | 2015-01-21 | 2016-07-25 | 株式会社ディスコ | 研削装置 |
JP2018069348A (ja) | 2016-10-25 | 2018-05-10 | 株式会社ディスコ | チャックテーブルの整形方法 |
JP2018114563A (ja) | 2017-01-16 | 2018-07-26 | 株式会社ディスコ | チャックテーブルの詰まり検出方法及び加工装置 |
JP2019136806A (ja) | 2018-02-08 | 2019-08-22 | 株式会社ディスコ | 保持面の研削方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326174A (ja) * | 1993-05-12 | 1994-11-25 | Hitachi Ltd | ウェハ真空吸着装置 |
JP3894514B2 (ja) * | 1997-04-04 | 2007-03-22 | 株式会社ディスコ | 研磨装置 |
JP2003209080A (ja) | 2002-01-11 | 2003-07-25 | Disco Abrasive Syst Ltd | 半導体ウェーハ保護部材及び半導体ウェーハの研削方法 |
JP2005028550A (ja) * | 2003-07-11 | 2005-02-03 | Disco Abrasive Syst Ltd | 結晶方位を有するウエーハの研磨方法 |
JP5254539B2 (ja) * | 2006-08-09 | 2013-08-07 | 株式会社ディスコ | ウエーハ研削装置 |
JP2010016181A (ja) * | 2008-07-03 | 2010-01-21 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
JP5436876B2 (ja) * | 2009-02-02 | 2014-03-05 | 株式会社ディスコ | 研削方法 |
JP2012222134A (ja) * | 2011-04-08 | 2012-11-12 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
JP6292958B2 (ja) | 2014-04-18 | 2018-03-14 | 株式会社ディスコ | 研削装置 |
JP2016047561A (ja) * | 2014-08-27 | 2016-04-07 | 株式会社ディスコ | 研削装置 |
-
2019
- 2019-09-10 JP JP2019164154A patent/JP7504537B2/ja active Active
-
2020
- 2020-08-19 TW TW109128292A patent/TW202111798A/zh unknown
- 2020-09-03 SG SG10202008559QA patent/SG10202008559QA/en unknown
- 2020-09-03 US US17/010,991 patent/US11482407B2/en active Active
- 2020-09-07 KR KR1020200113893A patent/KR20210030877A/ko active Search and Examination
- 2020-09-08 CN CN202010934172.1A patent/CN112548844B/zh active Active
- 2020-09-09 DE DE102020211312.2A patent/DE102020211312A1/de active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008060470A (ja) | 2006-09-01 | 2008-03-13 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012134275A (ja) | 2010-12-21 | 2012-07-12 | Disco Abrasive Syst Ltd | 研削装置 |
JP2013094913A (ja) | 2011-11-02 | 2013-05-20 | Disco Corp | 加工装置 |
JP2016132071A (ja) | 2015-01-21 | 2016-07-25 | 株式会社ディスコ | 研削装置 |
JP2018069348A (ja) | 2016-10-25 | 2018-05-10 | 株式会社ディスコ | チャックテーブルの整形方法 |
JP2018114563A (ja) | 2017-01-16 | 2018-07-26 | 株式会社ディスコ | チャックテーブルの詰まり検出方法及び加工装置 |
JP2019136806A (ja) | 2018-02-08 | 2019-08-22 | 株式会社ディスコ | 保持面の研削方法 |
Also Published As
Publication number | Publication date |
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CN112548844B (zh) | 2024-06-04 |
US20210074537A1 (en) | 2021-03-11 |
US11482407B2 (en) | 2022-10-25 |
JP2021044330A (ja) | 2021-03-18 |
DE102020211312A1 (de) | 2021-03-11 |
TW202111798A (zh) | 2021-03-16 |
SG10202008559QA (en) | 2021-04-29 |
CN112548844A (zh) | 2021-03-26 |
KR20210030877A (ko) | 2021-03-18 |
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