JP7493314B2 - ユニバーサルブロードバンド光検出器の設計及び製造方法 - Google Patents
ユニバーサルブロードバンド光検出器の設計及び製造方法 Download PDFInfo
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- JP7493314B2 JP7493314B2 JP2019155122A JP2019155122A JP7493314B2 JP 7493314 B2 JP7493314 B2 JP 7493314B2 JP 2019155122 A JP2019155122 A JP 2019155122A JP 2019155122 A JP2019155122 A JP 2019155122A JP 7493314 B2 JP7493314 B2 JP 7493314B2
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- 238000013461 design Methods 0.000 title description 15
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- 229910052751 metal Inorganic materials 0.000 claims description 181
- 239000002184 metal Substances 0.000 claims description 181
- 229910052732 germanium Inorganic materials 0.000 claims description 107
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 105
- 230000004888 barrier function Effects 0.000 claims description 63
- 239000013307 optical fiber Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000835 fiber Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 12
- 239000006117 anti-reflective coating Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
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- 150000002290 germanium Chemical class 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
ここで、εはGeの誘電率=16であり、ε0は真空透過率=8.85418E-14F/cmであり、VbiはGeショットキーバリヤ検出器のビルトイン電圧(又は電位)であり、NdはGeショットキーバリヤ検出器の(メサ構造44内の)活性層の背景ドーピング密度であり、Kはボルツマン定数=1.38066E-23J/゜Kであり、Tは絶対温度(゜K)であり、qは電子の電荷=1.60218E-19Cであり、KT/qは300゜K(室温)における熱電圧=0.0259Vである。
ここで、Aは、Geショットキーバリヤ検出器の面積である。
ここで、A*は有効リチャードソン定数であり、φbはGeショットキーバリヤ検出器のバリヤ高さである。有効リチャードソン定数(A*)の値は、金属膜の厚さ、金属の種類、堆積の方法、及び金属堆積の前の半導体の状態の関数である。暗電流に影響を与える有効リチャードソン定数A*は、128から135A/cm2/゜K2の範囲内にあることが好適である。ショットキーバリヤの主要な特性のうちの1つは、φbで指定されるショットキーバリヤ高さである。φbの値は、金属及び半導体の組み合わせに依存し、0.54から0.64Vの範囲内にあることが好適である。
ここで、ηQEは、Geショットキーバリヤ検出器の量子効率であり、Piは、Geショットキーバリヤ検出器の入射電力であり、λは、Geショットキーバリヤ検出器への入射光子の波長(ミクロン単位における)である。
条項1.
ドープされたゲルマニウムから作製された基板、
前記基板の上端上で成長したドープされたエピタキシャルゲルマニウムから作製されたメサ構造であって、前記ドープされたエピタキシャルゲルマニウムのドーピング密度が、前記ドープされたゲルマニウムのドーピング密度未満である、メサ構造、
前記メサ構造の上端上に堆積した金属から作製された金属膜、
前記メサ構造の上端上に堆積した金属から作製され且つ前記膜と接触した金属パッド、及び
前記基板の底部上に堆積した金属から作製されたオーミック接触層を備える、光検出器。
条項2.
前記金属膜及び前記金属パッドが、金、銀、アルミニウム、銅、及びインジウムから成る群から選択された金属から作製されている、条項1に記載の光検出器。
条項3.前記金属膜及び前記メサ構造が、0.54から0.64ボルトの範囲内のショットキーバリヤ高さを有する接合を形成する、条項2に記載の光検出器。
条項4.
前記金属パッド及び前記オーミック接触層に接続された電圧源を更に備え、前記金属膜及び前記メサ構造が、前記メサ構造内の且つ前記金属膜に隣接した空乏領域を生成するように構成され、前記空乏領域が、前記金属膜上への光子の衝突中に前記電圧源によって逆バイアス電圧が印加されたときに、増加する幅を有する、条項1に記載の光検出器。
条項5.
前記金属膜が、450から600ミクロンの範囲内の直径を有する、条項4に記載の光検出器。
条項6.
有効リチャードソン定数が、128から135A/cm2‐゜K2の範囲内である、条項4に記載の光検出器。
条項7.
前記膜上に付着した反射防止コーティングを更に備える、条項1に記載の光検出器。
条項8.
前記メサ構造の露出した表面をカバーする誘電体パッシベーション層を更に備える、条項1に記載の光検出器。
条項9.
端部を有する光ファイバ、
ベース、前記ベースに取り付けられたレンズキャップ、及び前記レンズキャップの上端上の開口部内に設置されたガラスボールレンズを備えた、密封金属ケース、並びに
前記金属ケースの内側に配置された光検出器を備える、光ファイバデバイスであって、
前記光検出器が、ドープされたゲルマニウムから作製された基板、前記基板の上端上で成長した低ドープされたエピタキシャルゲルマニウムから作製されたメサ構造であって、前記ドープされたエピタキシャルゲルマニウムのドーピング密度が、前記ドープされたゲルマニウムのドーピング密度よりかなり低い、メサ構造、前記メサ構造の上端上に堆積した金属から作製された金属膜、前記メサ構造の上端上に堆積した金属から作製され且つ前記膜と接触した金属パッド、及び前記基板の底部上に堆積した金属から作製されたオーミック接触層を備え、
前記光ファイバ、前記ガラスボールレンズ、及び前記金属膜が整列している、光ファイバデバイス。
条項10.
前記金属膜及び前記金属パッドが、金、銀、アルミニウム、銅、及びインジウムから成る群から選択された金属から作製されている、条項9に記載の光ファイバデバイス。
条項11.
前記金属膜及び前記メサ構造が、0.54から0.64ボルトの範囲内のショットキーバリヤ高さを有する接合を形成する、条項9に記載の光ファイバデバイス。
条項12.
前記金属膜及び前記メサ構造が、前記メサ構造内の且つ前記金属膜に隣接した空乏領域を生成するように構成され、前記空乏領域が、前記金属膜上への光子の衝突中に前記金属パッドと前記オーミック接触層とを両端として前記両端に逆バイアス電圧が印加されたときに、増加する幅を有する、条項9に記載の光ファイバデバイス。
条項13.
前記金属膜が、450から600ミクロンの範囲内の直径を有し、前記ガラスボールレンズが、2mmの直径を有する、条項9に記載の光ファイバデバイス。
条項14.
前記金属膜が、前記ガラスボールレンズの後方焦点距離に位置決めされている、条項13に記載の光ファイバデバイス。
条項15.
前記オーミック接触金属層と接触した金属層、及び
前記金属層を前記ベースから電気的に孤立させる絶縁層を更に備える、条項9に記載の光ファイバデバイス。
条項16.
前記光検出器が、前記メサ構造の露出した表面をカバーする誘電体パッシベーション層を更に備える、条項9に記載の光ファイバデバイス。
条項17.
光検出器を製造するための方法であって、
100から150ミクロンの範囲内の厚さを有するゲルマニウム基板が形成されるまで、ドープされたゲルマニウムウエハを研磨し、ラッピングすること、
前記ゲルマニウム基板の上端上に約15ミクロンの厚さで、ドープされたゲルマニウムエピタキシャル層を成長させること、
前記ゲルマニウム基板の底部上にオーミック接触金属層を堆積させること、
金属パッドが金属膜と接触するように、前記ゲルマニウムエピタキシャル層の上端上に前記金属膜と前記金属パッドを堆積させること、
前記ゲルマニウムエピタキシャル層の一部を除去することによって、メサ構造を形成すること、及び
前記メサ構造の露出した表面上に誘電体パッシベーション層を堆積させることを含む、方法。
条項18.
前記金属膜の上端上に反射防止コーティングを付着させることを更に含む、条項17に記載の方法。
条項19.
前記金属膜及び前記金属パッドが、金、銀、アルミニウム、銅、及びインジウムから成る群から選択された金属から作製されている、条項17に記載の方法。
条項20.
前記メサ構造の上面が、450から600ミクロンの範囲内の直径を有する、条項17に記載の方法。
Claims (10)
- n+型ドープされたゲルマニウムから作製された基板、
前記基板の上端上で成長したn型ドープされたエピタキシャルゲルマニウムから作製されたメサ構造であって、前記ドープされたエピタキシャルゲルマニウムのドーピング密度が、前記ドープされたゲルマニウム基板のドーピング密度未満である、メサ構造、
前記メサ構造の上端上に堆積した金属から作製された金属膜、
前記メサ構造の上端上に堆積した金属から作製され且つ前記膜と接触した金属パッド、及び
前記基板の底部上に堆積した金属から作製されたオーミック接触層を備える、ショットキーバリヤ光検出器。 - 前記金属膜及び前記金属パッドが、金、銀、アルミニウム、銅、及びインジウムから成る群から選択された金属から作製されている、請求項1に記載の光検出器。
- 前記金属膜及び前記メサ構造が、0.54から0.64ボルトの範囲内のショットキーバリヤ高さを有する接合を形成する、請求項2に記載の光検出器。
- 前記金属パッド及び前記オーミック接触層に接続された電圧源を更に備え、前記金属膜及び前記メサ構造が、前記メサ構造内の且つ前記金属膜に隣接した空乏領域を生成するように構成され、前記空乏領域が、前記金属膜上への光子の衝突中に前記電圧源によって逆バイアス電圧が印加されたときに、増加する幅を有する、請求項1に記載の光検出器。
- 前記金属膜が、450から600ミクロンの範囲内の直径を有する円形である、請求項4に記載の光検出器。
- 有効リチャードソン定数が、128から135A/(cm 2 ・K 2 )の範囲内である、請求項4又は5に記載の光検出器。
- 前記膜上に付着した反射防止コーティングを更に備える、請求項1に記載の光検出器。
- 前記メサ構造の前記金属膜又は前記金属パッドで覆われていない露出した表面をカバーする誘電体パッシベーション層を更に備える、請求項1に記載の光検出器。
- 端部を有する光ファイバ、
ベース、前記ベースに取り付けられたレンズキャップ、及び前記レンズキャップの上端上の開口部内に設置されたガラスボールレンズを備えた、密封金属ケース、並びに
前記金属ケースの内側に配置されたショットキーバリヤ光検出器を備える、光ファイバデバイスであって、
前記光検出器が、n+型ドープされたゲルマニウムから作製された基板、前記基板の上端上で成長したn型に低ドープされたエピタキシャルゲルマニウムから作製されたメサ構造であって、前記ドープされたエピタキシャルゲルマニウムのドーピング密度が、前記ドープされたゲルマニウム基板のドーピング密度よりかなり低い、メサ構造、前記メサ構造の上端上に堆積した金属から作製された金属膜、前記メサ構造の上端上に堆積した金属から作製され且つ前記膜と接触した金属パッド、及び前記基板の底部上に堆積した金属から作製されたオーミック接触層を備え、
前記光ファイバ、前記ガラスボールレンズ、及び前記金属膜が整列している、光ファイバデバイス。 - 前記金属膜及び前記金属パッドが、金、銀、アルミニウム、銅、及びインジウムから成る群から選択された金属から作製されており、
前記金属膜及び前記メサ構造が、0.54から0.64ボルトの範囲内のショットキーバリヤ高さを有する接合を形成し、
前記金属膜及び前記メサ構造が、前記メサ構造内の且つ前記金属膜に隣接した空乏領域を生成するように構成され、前記空乏領域が、前記金属膜上への光子の衝突中に前記金属パッドと前記オーミック接触層とを両端として前記両端に逆バイアス電圧が印加されたときに、増加する幅を有し、
前記金属膜が、450から600ミクロンの範囲内の直径を有する円形であり、前記ガラスボールレンズが、2mmの直径を有し、
前記光検出器が、前記メサ構造の前記金属膜又は前記金属パッドで覆われていない露出した表面をカバーする誘電体パッシベーション層を更に備える、請求項9に記載の光ファイバデバイス。
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