JP7482833B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000002184 metal Substances 0.000 claims description 100
- 239000000853 adhesive Substances 0.000 claims description 72
- 230000001070 adhesive effect Effects 0.000 claims description 72
- 229910044991 metal oxide Inorganic materials 0.000 claims description 68
- 150000004706 metal oxides Chemical class 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000010410 layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置の断面図である。図2は、実施の形態1に係る半導体装置におけるケース7a接着前の状態を示す上面図である。
次に、実施の形態2に係る半導体装置について説明する。図6は、実施の形態2に係る半導体装置におけるケース7a装着前の状態を示す上面図である。図7は、実施の形態2に係る半導体装置におけるケース7a装着前の状態を示す断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置について説明する。図8は、実施の形態3に係る半導体装置におけるケース7a装着前の状態を示す上面図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (7)
- 金属ベースと、
前記金属ベース上に配置された絶縁基板と、
前記絶縁基板上に搭載された半導体素子と、
前記絶縁基板および前記半導体素子の側面を囲むように前記金属ベース上に接着されたケースと、を備え、
前記金属ベース上の周縁部には、突起状の第1の金属酸化膜の対が設けられ、
前記ケースは、前記第1の金属酸化膜の対の間の領域に配置された接着剤により前記金属ベースに接着された、半導体装置。 - 前記第1の金属酸化膜の対は、前記金属ベース上の周縁部に沿ってライン状に形成された、請求項1に記載の半導体装置。
- 前記金属ベース上の周縁部には、前記第1の金属酸化膜の対の側面を囲むように突起状の第2の金属酸化膜の対が設けられた、請求項1または請求項2に記載の半導体装置。
- 前記第2の金属酸化膜の対の上端の高さ位置は、前記第1の金属酸化膜の対の上端の高さ位置よりも高い、請求項3に記載の半導体装置。
- 前記金属ベースの角部には、ねじ締結用の貫通穴が設けられ、
前記ケースにおける前記金属ベースの前記貫通穴に対向する位置には、ねじ締結用の穴部が設けられ、
前記ケースと前記金属ベースは、前記穴部と前記貫通穴を介してねじ締結された、請求項1から請求項4のいずれか1項に記載の半導体装置。 - (a)金属ベース上に絶縁基板を接合し、前記絶縁基板上に半導体素子を搭載する工程と、
(b)前記金属ベース上の周縁部に、突起状の第1の金属酸化膜の対を形成する工程と、
(c)前記第1の金属酸化膜の対の間の領域に接着剤を塗布する工程と、
(d)前記金属ベース上にケースを前記接着剤により接着する工程と、
(e)前記ケースに設けられたリード電極を前記半導体素子に接合する工程と、
(f)前記ケースの内部に封止樹脂を充填する工程と、
を備えた、半導体装置の製造方法。 - 前記工程(b)において、前記第1の金属酸化膜の対は、前記金属ベース上の周縁部にレーザーエネルギーを与えることにより形成される、請求項6に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2021088937A JP7482833B2 (ja) | 2021-05-27 | 2021-05-27 | 半導体装置および半導体装置の製造方法 |
US17/682,603 US20220384283A1 (en) | 2021-05-27 | 2022-02-28 | Semiconductor device and method of manufacturing semiconductor device |
DE102022109028.0A DE102022109028A1 (de) | 2021-05-27 | 2022-04-13 | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN202210555456.9A CN115411002A (zh) | 2021-05-27 | 2022-05-20 | 半导体装置及半导体装置的制造方法 |
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JP2021088937A JP7482833B2 (ja) | 2021-05-27 | 2021-05-27 | 半導体装置および半導体装置の製造方法 |
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JP2022181779A JP2022181779A (ja) | 2022-12-08 |
JP7482833B2 true JP7482833B2 (ja) | 2024-05-14 |
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US (1) | US20220384283A1 (ja) |
JP (1) | JP7482833B2 (ja) |
CN (1) | CN115411002A (ja) |
DE (1) | DE102022109028A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103846A (ja) | 2002-09-10 | 2004-04-02 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2005322784A (ja) | 2004-05-10 | 2005-11-17 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012015349A (ja) | 2010-07-01 | 2012-01-19 | Fuji Electric Co Ltd | 半導体装置 |
JP2013051556A (ja) | 2011-08-31 | 2013-03-14 | Kyocera Crystal Device Corp | 圧電装置 |
US20130140947A1 (en) | 2011-08-31 | 2013-06-06 | Kyocera Crystal Device Corporation | Piezoelectric device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000323593A (ja) | 1999-05-06 | 2000-11-24 | Yazaki Corp | 半導体装置 |
JP3922882B2 (ja) * | 2000-12-28 | 2007-05-30 | 東レエンジニアリング株式会社 | チップの実装方法 |
JP2016213412A (ja) * | 2015-05-13 | 2016-12-15 | 株式会社リコー | 光学装置及び光照射装置 |
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2021
- 2021-05-27 JP JP2021088937A patent/JP7482833B2/ja active Active
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2022
- 2022-02-28 US US17/682,603 patent/US20220384283A1/en active Pending
- 2022-04-13 DE DE102022109028.0A patent/DE102022109028A1/de active Pending
- 2022-05-20 CN CN202210555456.9A patent/CN115411002A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103846A (ja) | 2002-09-10 | 2004-04-02 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2005322784A (ja) | 2004-05-10 | 2005-11-17 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2012015349A (ja) | 2010-07-01 | 2012-01-19 | Fuji Electric Co Ltd | 半導体装置 |
JP2013051556A (ja) | 2011-08-31 | 2013-03-14 | Kyocera Crystal Device Corp | 圧電装置 |
US20130140947A1 (en) | 2011-08-31 | 2013-06-06 | Kyocera Crystal Device Corporation | Piezoelectric device |
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Publication number | Publication date |
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US20220384283A1 (en) | 2022-12-01 |
CN115411002A (zh) | 2022-11-29 |
DE102022109028A1 (de) | 2022-12-01 |
JP2022181779A (ja) | 2022-12-08 |
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