JP7475252B2 - 基板処理装置、及び基板処理方法 - Google Patents
基板処理装置、及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 123
- 238000012545 processing Methods 0.000 title claims description 75
- 238000003672 processing method Methods 0.000 title claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 100
- 239000007788 liquid Substances 0.000 claims description 94
- 239000005871 repellent Substances 0.000 claims description 77
- 230000002940 repellent Effects 0.000 claims description 68
- 239000003960 organic solvent Substances 0.000 claims description 50
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- 238000000926 separation method Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims 3
- 238000005259 measurement Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 74
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910007991 Si-N Inorganic materials 0.000 description 5
- 229910006294 Si—N Inorganic materials 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 5
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 239000002352 surface water Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- -1 Dimethylaminotriethylsilane ((N,N-Dimethylamino)triethylsilane) -Butyldimethyl(dimethylamino)silane Chemical compound 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- HVOFQSDLPSCYBH-UHFFFAOYSA-N n-[dimethyl(octyl)silyl]-n-methylmethanamine Chemical compound CCCCCCCC[Si](C)(C)N(C)C HVOFQSDLPSCYBH-UHFFFAOYSA-N 0.000 description 1
- AHJCYBLQMDWLOC-UHFFFAOYSA-N n-methyl-n-silylmethanamine Chemical compound CN(C)[SiH3] AHJCYBLQMDWLOC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67011—Apparatus for manufacture or treatment
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Description
・IPA(2-プロパノール):密度0.786g/cm3
・アセトン:密度0.791g/cm3
などが挙げられる。
・DBE(ジブチルエーテル):溶解量30mg、密度0.764g/cm3
・nBA(酢酸ブチル):溶解量1.4g、密度0.882g/cm3
・酢酸プロピル:溶解量1.89g、密度0.890g/cm3
・酢酸エチル:溶解量8.3g、密度0.897g/cm3
・シクロヘキサノン:溶解量8.7g、密度0.950g/cm3
などが挙げられる。
・(トリメチルシリル)ジメチルアミン(N,N-Dimethyltrimethylsilylamine:TMSDMA)
・ノナフルオロヘキシルジメチル(ジメチルアミノ)シラン(NFHDMA)
・ジメチルアミノトリエチルシラン((N,N-Dimethylamino)triethylsilane)
・ブチルジメチル(ジメチルアミノ)シラン(Butyldimethyl(dimethylamino)silane)
・オクチルジメチル(ジメチルアミノ)シラン(n-Octyldimethyl(dimethylamino)silane)
などが挙げられる。
10 処理槽
20 保持部
30 排液ポート
40 有機溶剤供給部
50 ガス供給部
60 排気ポート
Claims (15)
- 基板が浸漬される水層を溜める処理槽と、
前記基板を保持する保持部と、
前記水層の上に有機溶剤を供給し、前記有機溶剤の液層を形成する有機溶剤供給部と、
前記処理槽の底壁から前記水層を排出し、前記有機溶剤の前記液層を前記基板よりも上方から前記基板よりも下方に下降させる排液ポートと、
前記液層の下降中に、前記液層に対して前記処理槽の上方から撥水化剤のガスを供給するガス供給部と、
前記液層の下降によって前記処理槽の側壁に露出し、前記撥水化剤のガスを排出する排気ポートと、を備える、基板処理装置。 - 前記処理槽の上方に設けられる第2排気ポートを備え、
前記第2排気ポートは、少なくとも前記排気ポートによる排気が始まるまで、前記撥水化剤のガスを排出する、請求項1に記載の基板処理装置。 - 前記排気ポートによる排気が始まると同時又は後に、前記第2排気ポートによる排気を止める開閉バルブを備える、請求項2に記載の基板処理装置。
- 前記液層の下降中に、前記液層の液面の高さを計測する液面レベルセンサと、
前記液面レベルセンサの計測結果に基づき前記開閉バルブを制御する制御部と、を備える、請求項3に記載の基板処理装置。 - 前記排気ポートから延びる排気ラインを備え、
前記排気ラインの上端の高さは、前記処理槽の上端の高さよりも高い、請求項1~4のいずれか1項に記載の基板処理装置。 - 前記排気ラインを介して前記排気ポートに接続される気液分離部を備え、
前記気液分離部は、気体と液体とを分離して排出する、請求項5に記載の基板処理装置。 - 前記排気ポートは、前記処理槽の互いに対向する一対の前記側壁に設けられる、請求項1~6のいずれか1項に記載の基板処理装置。
- 前記排気ポートは吸引源とは接続されておらず、前記ガス供給部が前記処理槽の上方に前記撥水化剤のガスを供給し、供給したガスが前記処理槽の内部のガスを前記排気ポートに押し出す、請求項1~7のいずれか1項に記載の基板処理装置。
- 処理槽に溜めた水層に基板を浸漬した状態で、前記水層の上に有機溶剤を供給し、前記有機溶剤の液層を形成することと、
前記水層を前記処理槽の底壁から排出し、前記有機溶剤の前記液層を前記基板よりも上方から前記基板よりも下方に下降させることと、
前記液層の下降中に、前記液層に対して前記処理槽の上方から撥水化剤のガスを供給することと、
前記液層の下降によって前記処理槽の側壁に露出する排気ポートによって、前記撥水化剤のガスを排出することと、を含む、基板処理方法。 - 少なくとも前記排気ポートによる排気を始めるまで、前記処理槽の上方に設けられる第2排気ポートによって、前記撥水化剤のガスを排出することを含む、請求項9に記載の基板処理方法。
- 前記排気ポートによる排気を始めると同時又は後に、前記第2排気ポートによる排気を止めることを含む、請求項10に記載の基板処理方法。
- 前記排気ポートから延びる排気ラインによって、前記撥水化剤のガスを排出することを含み、
前記排気ラインの上端の高さは、前記処理槽の上端の高さよりも高い、請求項9~11のいずれか1項に記載の基板処理方法。 - 前記排気ラインを介して前記排気ポートに接続される気液分離部にて、気体と液体とを分離することを含む、請求項12に記載の基板処理方法。
- 前記排気ポートは、前記処理槽の互いに対向する一対の前記側壁に設けられる、請求項9~13のいずれか1項に記載の基板処理方法。
- 前記排気ポートは吸引源とは接続されておらず、前記処理槽の上方に前記撥水化剤のガスを供給し、供給したガスによって前記処理槽の内部のガスを前記排気ポートに押し出す、請求項9~14のいずれか1項に記載の基板処理方法。
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