JP7472029B2 - 認証システム - Google Patents
認証システム Download PDFInfo
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- JP7472029B2 JP7472029B2 JP2020550947A JP2020550947A JP7472029B2 JP 7472029 B2 JP7472029 B2 JP 7472029B2 JP 2020550947 A JP2020550947 A JP 2020550947A JP 2020550947 A JP2020550947 A JP 2020550947A JP 7472029 B2 JP7472029 B2 JP 7472029B2
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- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
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- HDMYKJVSQIHZLM-UHFFFAOYSA-N 1-[3,5-di(pyren-1-yl)phenyl]pyrene Chemical compound C1=CC(C=2C=C(C=C(C=2)C=2C3=CC=C4C=CC=C5C=CC(C3=C54)=CC=2)C=2C3=CC=C4C=CC=C5C=CC(C3=C54)=CC=2)=C2C=CC3=CC=CC4=CC=C1C2=C43 HDMYKJVSQIHZLM-UHFFFAOYSA-N 0.000 description 2
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 2
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Description
図2は、実施の形態に係る認証システムを用いて、解錠履歴を記録する方法を説明する図である。
図3は、半導体装置の構成例を説明する図である。
図4Aおよび図4Bは、半導体装置の構成例を説明する図である。
図5A乃至図5Dは、半導体装置の作製方法の一例を説明する図である。
図6A乃至図6Cは、半導体装置の作製方法の一例を説明する図である。
図7Aおよび図7Bは、半導体装置の作製方法の一例を説明する図である。
図8A乃至図8Cは、発光素子の構成例を説明する図である。
図9は、半導体装置の構成例を説明する図である。
図10Aおよび図10Bは、半導体装置の構成例を説明する図である。
図11は、半導体装置の構成例を説明する図である。
図12は、画素の構成例を説明する図である。
図13Aおよび図13Bは、半導体装置の構成例を説明する図である。
図14Aは、ローリングシャッタ方式を説明する図であり、図14Bは、グローバルシャッタ方式を説明する図である。
図15は、画素の構成例を説明する図である。
図16は、半導体装置の構成例を説明する図である。
図17は、半導体装置の動作方法の一例を説明する図である。
図18A乃至図18Dは、トランジスタの構成例を説明する図である。
図19A乃至図19Cは、電子機器を説明する図である。
図20は、市場イメージを説明する図である。
本実施の形態では、本発明の一態様の認証システムの構成について、図1、図2、図11乃至図13を参照しながら説明する。
本実施の形態で説明する認証システムは、演算装置610と、入出力装置620と、を有する(図1A参照)。
演算装置610は、制御情報CI1および制御情報CI2を供給する。また、演算装置610は、検知信号DSを供給される。
入出力装置620は、電気錠670および読み取り部660を備える。
電気錠670は、制御情報CI2に基づいて、解錠する。
読み取り部660は、第1の制御情報CI1を供給され、検知信号DSを供給する。また、読み取り部660は、発光素子40および画素アレイ151を備える(図1B参照)。
発光素子40は、赤外線を含む光IRを照射する(図1C参照)。
画素アレイ151は画素10を備える(図13A参照)。
画素10は、撮像回路100および光電変換素子12を備える(図12参照)。
光電変換素子12は有機半導体膜を含む(図11参照)。
また、演算装置610は、演算部611および記憶部612を備える(図1A参照)。
また、記憶部612はデータベースDB2を格納する。
本発明の一態様のプログラムは、第1のステップ乃至第7のステップを有する(図2参照)。
第1のステップにおいて、撮像して検知信号DSを取得する(図2(S1)参照)。具体的には、認証システムの演算装置610は制御信号CI1を供給する(図1A参照)。また、制御信号CI1に基づいて、読み取り部660の発光素子40は赤外線を含む光IRを照射し、画素アレイ151を用いて撮像する。なお、読み取り部660は検知信号DSを供給する。これにより、演算装置610は検知信号DSを取得することができる。
第2のステップにおいて、検知信号DSに、所定の大きさを超える変化が認められる場合は、第3のステップに進み、所定の大きさ以下の変化しか認められない場合は、第1のステップに進む(図2(S2)参照)。例えば、光IRの一部を遮蔽または反射する物が、読み取り部660に近接してあるとき、検知信号DSは変化する(図1Dまたは図1E参照)。これにより、認証システムは被写体が、読み取り部660の近くにあることを知ることができる。
第3のステップにおいて、撮像して検知信号DSを取得する(図2(S3)参照)。具体的には、認証システムの演算装置610は制御信号CI1を供給する(図1A参照)。また、制御信号CI1に基づいて、読み取り部660の発光素子40は赤外線を含む光IRを照射し、画素アレイ151を用いて撮像する。なお、読み取り部660は検知信号DSを供給する。これにより、演算装置610は検知信号DSを取得することができる。
第4のステップにおいて、検知信号DSから特徴量を抽出する(図2(S4)参照)。例えば、静脈の広がりや静脈の配置のパターンに由来する特徴量を、検知信号DSから抽出する。
第5のステップにおいて、データベースDB1を用いて、特徴量を検定し、データベースDB1が特徴量と一致するデータを含む場合は、第6のステップに進む。また、データベースDB1が特徴量と一致するデータを含まない場合は、第1のステップに進む(図2(S5)参照)。
第6のステップにおいて、制御情報CI2を供給し、電気錠670を解錠する(図2(S6)参照)。
第7のステップにおいて、解錠履歴をデータベースDB2に記録する(図2(S7)参照)。
本実施の形態では、本発明の一態様の認証システムに用いることができる半導体装置、及びその作製方法について、図面を参照して説明する。
図3は、本発明の一態様の半導体装置が有する画素である、画素10の構成例を説明する断面図である。画素10は、基板30と基板50との間に、トランジスタ101、トランジスタ132、光電変換素子12、発光素子40等を有する。ここで、トランジスタ101及びトランジスタ132には、例えばチャネル形成領域に金属酸化物を用いたトランジスタ(以下、OSトランジスタ)を用いることができる。
図5A、図5B、図5C、図5D、図6A、図6B、図6C、図7A、図7Bは、図3に示す構成の画素10の作製方法の一例を示す図である。
図8A乃至図8Cは、発光素子40の構成例を示す図である。図8Aには、導電層41と導電層43の間にEL層42が挟まれた構造(シングル構造)を示す。前述のとおり、EL層42には発光材料が含まれ、例えば、有機化合物である発光材料が含まれる。
次に、発光素子40に用いることができる構成材料について説明する。
導電層41及び導電層43には、アノード及びカソードの機能が満たせるのであれば、以下に示す材料を適宜組み合わせて用いることができる。例えば、金属、合金、電気伝導性化合物、及びこれらの混合物等を適宜用いることができる。具体的には、In-Sn酸化物(ITOともいう)、In-Si-Sn酸化物(ITSOともいう)、In-Zn酸化物、In-W-Zn酸化物が挙げられる。その他、アルミニウム(Al)、チタン(Ti)、クロム(Cr)、マンガン(Mn)、鉄(Fe)、コバルト(Co)、ニッケル(Ni)、銅(Cu)、ガリウム(Ga)、亜鉛(Zn)、インジウム(In)、スズ(Sn)、モリブデン(Mo)、タンタル(Ta)、タングステン(W)、パラジウム(Pd)、金(Au)、白金(Pt)、銀(Ag)、イットリウム(Y)、ネオジム(Nd)等の金属、及びこれらを適宜組み合わせて含む合金を用いることもできる。その他、上記例示のない元素周期表の第1族又は第2族に属する元素(例えば、リチウム(Li)、セシウム(Cs)、カルシウム(Ca)、ストロンチウム(Sr))、ユウロピウム(Eu)、イッテルビウム(Yb)等の希土類金属及びこれらを適宜組み合わせて含む合金、その他グラフェン等を用いることができる。
正孔注入層71は、アノードである導電層41又は電荷発生層44からEL層42に正孔を注入する層であり、正孔注入性の高い材料を含む層である。ここで、EL層42は、EL層42a、EL層42b、EL層42c、及びEL層42(1)乃至EL層42(n)を含むものとする。
発光層73は、発光物質を含む層である。なお、発光物質としては、青色、紫色、青紫色、緑色、黄緑色、黄色、橙色、赤色等の発光色を呈する物質を適宜用いる。ここで、図8Cに示すように、発光素子40が複数のEL層を有する場合、それぞれのEL層に設けられる発光層73に異なる発光物質を用いることにより、異なる発光色を呈する構成とすることができる。なお、一つの発光層が異なる発光物質を有する積層構造であってもよい。
電子輸送層74は、電子注入層75によって、導電層43から注入された電子を発光層73に輸送する層である。なお、電子輸送層74は、電子輸送性材料を含む層である。電子輸送層74に用いる電子輸送性材料は、1×10-6cm2/Vs以上の電子移動度を有する物質が好ましい。なお、正孔よりも電子の輸送性の高い物質であれば、これら以外のものを用いることができる。
電子注入層75は、電子注入性の高い物質を含む層である。電子注入層75には、フッ化リチウム(LiF)、フッ化セシウム(CsF)、フッ化カルシウム(CaF2)、リチウム酸化物(LiOx)等のようなアルカリ金属、アルカリ土類金属、又はそれらの化合物を用いることができる。また、フッ化エルビウム(ErF3)のような希土類金属化合物を用いることができる。また、電子注入層75にエレクトライドを用いてもよい。エレクトライドとしては、例えば、カルシウムとアルミニウムの混合酸化物に電子を高濃度添加した物質等が挙げられる。なお、上述した電子輸送層74を構成する物質を用いることもできる。
電荷発生層44(電荷発生層44a、電荷発生層44b)は、導電層41と導電層43との間に電圧を印加したときに、当該電荷発生層44に接する2つのEL層42のうち、導電層41と近い側のEL層42に電子を注入し、導電層43と違い側のEL層42に正孔を注入する機能を有する。なお、電荷発生層44は、正孔輸送性材料に電子受容体(アクセプター)が添加された構成であっても、電子輸送性材料に電子供与体(ドナー)が添加された構成であってもよい。また、これらの両方の構成が積層されていてもよい。なお、上述した材料を用いて電荷発生層44を形成することにより、EL層が積層された場合における、本発明の一態様の半導体装置の駆動電圧の上昇を抑制することができる。
図9は、画素10の構成例を説明する断面図であり、図3に示す構成の画素10の変形例である。図9に示す構成の画素10は、EL層42を塗り分けにより形成している点が、図3に示す構成の画素10と異なる。
図11は、画素10の構成例を説明する断面図である。図11に示す構成の画素10は、基板60と基板50との間に、トランジスタ101、トランジスタ132、光電変換素子12、発光素子40等が設けられる。
図12は、画素10の構成例を説明する回路図である。画素10は、光電変換素子12が設けられた撮像回路100と、発光素子40が設けられた表示回路130と、を有する。
撮像回路100は、光電変換素子12の他、トランジスタ101と、トランジスタ102と、トランジスタ103と、トランジスタ104と、容量素子105と、を有する。なお、容量素子105を設けない構成としてもよい。
表示回路130は、発光素子40の他、トランジスタ131と、トランジスタ132と、トランジスタ133と、容量素子134と、を有する。
図13Aは、本発明の一態様の半導体装置の構成例を説明するブロック図である。当該半導体装置は、マトリクス状に配列された画素10を有する画素アレイ151と、ゲートドライバ回路152と、ソースドライバ回路153と、を有する。画素10には、撮像回路100及び表示回路130が設けられる。
図18Aに、トランジスタ101等に適用することができるOSトランジスタの詳細な構成例を示す。図18Aに示すOSトランジスタは、金属酸化物層及び導電層の積層上に絶縁層を設け、当該金属酸化物層に達する溝を当該絶縁層及び導電層に設けることでソース電極205及びドレイン電極206を形成する、セルフアライン型の構成である。
本実施の形態は、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud-Aligned Composite)-OSの構成について説明する。
本実施の形態では、本発明の一態様の半導体装置を用いることができる電子機器の一例を説明する。
本実施の形態では、本発明の一態様の半導体装置を用いることができる市場イメージについて説明する。
まず、本発明の一態様の半導体装置を用いることができる市場イメージを図20に示す。図20において、領域701は、チャネル形成領域に酸化物半導体を有するトランジスタを適用したディスプレイ(Display)に応用可能な製品領域(OS Display)を表し、領域702は、チャネル形成領域に酸化物半導体を有するトランジスタを適用したLSI(Large Scale Integration)をアナログ(analog)に応用可能な製品領域(OS LSI analog)を表し、領域703は、チャネル形成領域に酸化物半導体を有するトランジスタを適用したLSIをデジタル(digital)に応用可能な製品領域(OS LSI digital)を表す。本発明の一態様の半導体装置は、図20に示す領域701、領域702、及び領域703の3つの領域、別言すると3つの大きな市場に好適に用いることができる。
Claims (4)
- 演算装置と、
入出力装置と、を有し、
前記演算装置は、第1の制御情報および第2の制御情報を供給し、
前記演算装置は、検知信号を供給され、
前記入出力装置は、電気錠および読み取り部を備え、
前記電気錠は、前記第2の制御情報に基づいて、解錠し、
前記読み取り部は、前記第1の制御情報を供給され、前記検知信号を供給し、
前記読み取り部は、画素アレイを備え、
前記画素アレイは、第1の画素と、第2の画素と、第3の画素と、第4の画素と、を備え、
前記第1乃至第4の画素は、それぞれ、第1の層と、第2の層と、第3の層と、を有し、
前記第1の層は、第1のトランジスタと、第2のトランジスタと、を有し、
前記第2の層は、光電変換素子を有し、
前記第3の層は、発光素子と、フィルタと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記発光素子の一方の電極と電気的に接続され、前記第2のトランジスタのソース又はドレインの一方は、前記光電変換素子の一方の電極と電気的に接続され、
前記第1のトランジスタおよび前記第2のトランジスタは、それぞれ、酸化物半導体膜を備え、
前記発光素子は、白色光及び赤外光を発する機能を有し、
前記第1乃至第3の画素が有する前記フィルタは、可視光を透過する機能を有し、
前記第4の画素が有する前記フィルタは、赤外光を透過し、且つ可視光を吸収する機能を有する、認証システム。 - 前記演算装置は、演算部および記憶部を備え、
前記記憶部は、プログラム、第1のデータベースを格納し、
前記演算部は、前記プログラムに基づいて、前記検知信号から特徴量を抽出し、
前記演算部は、前記第1のデータベースを用いて、前記特徴量を検定し、
前記演算部は、検定結果に基づいて、前記第2の制御情報を供給する、請求項1に記載の認証システム。 - 前記記憶部は、第2のデータベースを格納し、
前記演算部は、前記検定結果に基づいて、前記第2のデータベースに解錠履歴を記録する、請求項2に記載の認証システム。 - 前記酸化物半導体膜は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、Nd又はHf)と、を有する、請求項1乃至請求項3のいずれか一に記載の認証システム。
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US8736587B2 (en) * | 2008-07-10 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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US9987489B2 (en) * | 2015-03-27 | 2018-06-05 | Elwha Llc | Controlling ear stimulation in response to electrical contact sensing |
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JP2017196319A (ja) * | 2016-04-28 | 2017-11-02 | ソニー株式会社 | 撮像装置、認証処理装置、撮像方法、認証処理方法およびプログラム |
US10931859B2 (en) * | 2016-05-23 | 2021-02-23 | InSyte Systems | Light emitter and sensors for detecting biologic characteristics |
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JP2019219698A (ja) * | 2016-09-16 | 2019-12-26 | 日本電産リード株式会社 | 虹彩認証装置 |
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GB2555817A (en) * | 2016-11-10 | 2018-05-16 | Sthaler Ltd | Biometric transaction system |
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US10719692B2 (en) * | 2017-09-09 | 2020-07-21 | Apple Inc. | Vein matching for difficult biometric authentication cases |
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