JP7469943B2 - 表示装置及び表示装置の製造方法 - Google Patents
表示装置及び表示装置の製造方法 Download PDFInfo
- Publication number
- JP7469943B2 JP7469943B2 JP2020065785A JP2020065785A JP7469943B2 JP 7469943 B2 JP7469943 B2 JP 7469943B2 JP 2020065785 A JP2020065785 A JP 2020065785A JP 2020065785 A JP2020065785 A JP 2020065785A JP 7469943 B2 JP7469943 B2 JP 7469943B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- disposed
- conductive
- connection pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title description 22
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000010410 layer Substances 0.000 claims description 553
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000002184 metal Substances 0.000 claims description 83
- 238000005253 cladding Methods 0.000 claims description 52
- 238000002161 passivation Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 238000009413 insulation Methods 0.000 claims description 25
- 239000011229 interlayer Substances 0.000 claims description 22
- 238000005538 encapsulation Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000011368 organic material Substances 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- VGLYDBMDZXTCJA-UHFFFAOYSA-N aluminum zinc oxygen(2-) tin(4+) Chemical compound [O-2].[Al+3].[Sn+4].[Zn+2] VGLYDBMDZXTCJA-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- UPAJIVXVLIMMER-UHFFFAOYSA-N zinc oxygen(2-) zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[Zn+2].[Zr+4] UPAJIVXVLIMMER-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Human Computer Interaction (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Computer Networks & Wireless Communication (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
Description
本発明の他の目的は、前記表示装置の製造方法を提供することにある。
Claims (8)
- ベース基板と、
前記ベース基板の表示領域に配置される発光素子と、
前記発光素子に電気的に連結される駆動素子と、
前記発光素子をカバーする封止層と、
前記封止層の上に配置されるタッチ感知部と、
前記ベース基板のボンディング領域に配置され、下部導電層、前記下部導電層の上に配置される中間導電層、及び前記中間導電層の上に配置される上部導電層を含む連結パッドと、
前記連結パッドの中間導電層の少なくとも側端面をカバーし、有機物質を含むクラッディング層と、
前記クラッディング層の上面をカバーし、無機物質を含み、前記上部導電層の下にまで延長されるパッシベーション層と、
前記連結パッドにボンディングされる駆動部と、を含み、
前記駆動素子は、
ゲート電極を含むゲート金属パターンと、
ドレイン電極または前記ドレイン電極と前記発光素子を連結する連結電極を含むソース金属パターンとを含み、
前記タッチ感知部は、感知導電パターンを含み、
前記タッチ感知部は、
下部タッチ絶縁層と、
前記下部タッチ絶縁層の上に配置される第1感知導電パターンと、
前記第1感知導電パターンをカバーする層間タッチ絶縁層と、
前記層間タッチ絶縁層の上に配置される第2感知導電パターンとを含み、
前記パッシベーション層は、前記パッシベーション層は、前記下部タッチ絶縁層及び/又は前記層間タッチ絶縁層と同一の層から形成される、表示装置。 - ベース基板と、
前記ベース基板の表示領域に配置される発光素子と、
前記発光素子に電気的に連結される駆動素子と、
前記発光素子をカバーする封止層と、
前記封止層の上に配置されるタッチ感知部と、
前記ベース基板のボンディング領域に配置され、下部導電層、前記下部導電層の上に配置される中間導電層、及び前記中間導電層の上に配置される上部導電層を含む連結パッドと、
前記連結パッドの中間導電層の少なくとも側端面をカバーし、有機物質を含むクラッディング層と、
前記クラッディング層の上面をカバーし、無機物質を含み、前記上部導電層の下にまで延長されるパッシベーション層と、
前記連結パッドにボンディングされる駆動部と、を含み、
前記駆動素子は、
ゲート電極を含むゲート金属パターンと、
ドレイン電極または前記ドレイン電極と前記発光素子を連結する連結電極を含むソース金属パターンとを含み、
前記タッチ感知部は、感知導電パターンを含み、
前記下部導電層は前記ゲート金属パターンと同一の層から形成され、前記中間導電層は前記ソース金属パターンと同一の層から形成され、前記上部導電層は前記感知導電パターンと同一の層から形成され、
前記ソース金属パターンは、前記ドレイン電極を含む第1ソース金属パターン及び前記連結電極を含む第2ソース金属パターンを含み、
前記中間導電層は、前記第1ソース金属パターンと同一の層から形成される第1中間導電層及び前記第2ソース金属パターンと同一の層から形成される第2中間導電層を含み、
前記クラッディング層が前記第2中間導電層の側端面の全体とともに、これに隣接した箇所のみをカバーし、
前記クラッディング層の上面は、前記第2中間導電層の上面よりも低い位置に位置し、
前記第2中間導電層の側端面の下端は、前記第1中間導電層の上面よりも低い位置に位置する、表示装置。 - 前記連結パッドは、前記第2中間導電層と前記上部導電層との間に配置される第3中間導電層をさらに含むことを特徴とする、請求項2に記載の表示装置。
- ベース基板と、
前記ベース基板の表示領域に配置される発光素子と、
前記発光素子に電気的に連結される駆動素子と、
前記発光素子をカバーする封止層と、
前記封止層の上に配置されるタッチ感知部と、
前記ベース基板のボンディング領域に配置され、下部導電層、前記下部導電層の上に配置される中間導電層、及び前記中間導電層の上に配置される上部導電層を含む連結パッドと、
前記連結パッドの中間導電層の少なくとも側端面をカバーし、有機物質を含むクラッディング層と、
前記クラッディング層の上面をカバーし、無機物質を含み、前記上部導電層の下にまで延長されるパッシベーション層と、
前記連結パッドにボンディングされる駆動部と、を含み、
前記駆動素子は、
ゲート電極を含むゲート金属パターンと、
ドレイン電極または前記ドレイン電極と前記発光素子を連結する連結電極を含むソース金属パターンとを含み、
前記タッチ感知部は、感知導電パターンを含み、
前記タッチ感知部は、
下部タッチ絶縁層と、
前記下部タッチ絶縁層の上に配置される第1感知導電パターンと、
前記第1感知導電パターンをカバーする層間タッチ絶縁層と、
前記層間タッチ絶縁層の上に配置される第2感知導電パターンとを含み、
前記上部導電層は前記第2感知導電パターンと同一の層から形成されることを特徴とする、表示装置。 - 前記パッシベーション層は、前記下部タッチ絶縁層及び/又は前記層間タッチ絶縁層と同一の層から形成されることを特徴とする、請求項4に記載の表示装置。
- ベース基板と、
前記ベース基板の表示領域に配置される発光素子と、
前記発光素子に電気的に連結される駆動素子と、
前記発光素子をカバーする封止層と、
前記封止層の上に配置されるタッチ感知部と、
前記ベース基板のボンディング領域に配置され、下部導電層、前記下部導電層の上に配置される中間導電層、及び前記中間導電層の上に配置される上部導電層を含む連結パッドと、
前記連結パッドの中間導電層の少なくとも側端面をカバーし、有機物質を含むクラッディング層と、
前記クラッディング層の上面をカバーし、無機物質を含み、前記上部導電層の下にまで延長されるパッシベーション層と、
前記連結パッドにボンディングされる駆動部と、を含み、
前記駆動素子は、
ゲート電極を含むゲート金属パターンと、
ドレイン電極または前記ドレイン電極と前記発光素子を連結する連結電極を含むソース金属パターンとを含み、
前記タッチ感知部は、感知導電パターンを含み、
前記クラッディング層は前記ソース金属パターンをカバーする有機絶縁層と同一の層から形成され、前記有機絶縁層より小さな厚さを有する、表示装置。 - 前記クラッディング層の厚さは1μm以下であることを特徴とする、請求項6に記載の表示装置。
- 前記中間導電層は、アルミニウム層を含む積層構造を有することを特徴とする、請求項1または6に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190088190A KR20210011529A (ko) | 2019-07-22 | 2019-07-22 | 표시 장치 및 표시 장치의 제조 방법 |
KR10-2019-0088190 | 2019-07-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021018415A JP2021018415A (ja) | 2021-02-15 |
JP7469943B2 true JP7469943B2 (ja) | 2024-04-17 |
Family
ID=71728573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020065785A Active JP7469943B2 (ja) | 2019-07-22 | 2020-04-01 | 表示装置及び表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11700758B2 (ja) |
EP (1) | EP3770965B1 (ja) |
JP (1) | JP7469943B2 (ja) |
KR (1) | KR20210011529A (ja) |
CN (1) | CN112289826A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220365615A1 (en) * | 2021-05-13 | 2022-11-17 | Cambrios Film Solutions Corporation | On-cell touch display and preparing method thereof |
KR20230003702A (ko) * | 2021-06-29 | 2023-01-06 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20230003839A (ko) * | 2021-06-30 | 2023-01-06 | 엘지디스플레이 주식회사 | 터치 패널 및 이를 포함하는 터치표시장치 |
KR20240020765A (ko) * | 2022-08-08 | 2024-02-16 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 전자 기기 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070076393A1 (en) | 2005-09-30 | 2007-04-05 | Chang-Yong Jeong | Pad area and method of fabricating the same |
JP2015072764A (ja) | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
JP2015519588A (ja) | 2012-02-23 | 2015-07-09 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 電気機械システムデバイス |
US20170358642A1 (en) | 2016-06-10 | 2017-12-14 | Samsung Display Co., Ltd. | Display device |
US20170365653A1 (en) | 2016-06-21 | 2017-12-21 | Samsung Display Co., Ltd. | Display apparatus having grooved terminals and method of manufacturing the same |
JP2018006749A (ja) | 2016-06-28 | 2018-01-11 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
US20180097047A1 (en) | 2016-09-30 | 2018-04-05 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050097000A (ko) | 2004-03-30 | 2005-10-07 | 엘지.필립스 엘시디 주식회사 | 액정표시장치와 그 제조방법 |
US8710375B2 (en) * | 2008-03-04 | 2014-04-29 | Sharp Kabushiki Kaisha | Display device substrate, method for manufacturing the same, display device, method for forming multi-layer wiring, and multi-layer wiring substrate |
KR20140094880A (ko) * | 2013-01-23 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102054671B1 (ko) * | 2013-09-27 | 2019-12-11 | 엘지디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
KR20150073297A (ko) | 2013-12-20 | 2015-07-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 표시 기판 및 표시 기판의 제조 방법 |
KR102637068B1 (ko) | 2016-06-01 | 2024-02-16 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR102007435B1 (ko) | 2016-08-02 | 2019-08-06 | 삼성디스플레이 주식회사 | 유기발광 표시모듈 및 이를 포함하는 유기발광 표시장치 |
JP6756538B2 (ja) * | 2016-08-03 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
KR101926527B1 (ko) * | 2016-09-30 | 2018-12-10 | 엘지디스플레이 주식회사 | 터치 센서를 가지는 유기 발광 표시 장치 및 그 제조 방법 |
KR20180076006A (ko) * | 2016-12-27 | 2018-07-05 | 엘지디스플레이 주식회사 | 표시 장치 |
KR102438256B1 (ko) * | 2017-06-07 | 2022-08-30 | 엘지디스플레이 주식회사 | 터치 스크린을 갖는 유기 발광 표시 장치 및 이의 제조 방법 |
KR102370406B1 (ko) * | 2017-07-10 | 2022-03-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
JP6942602B2 (ja) * | 2017-10-19 | 2021-09-29 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
KR102476102B1 (ko) | 2017-11-17 | 2022-12-12 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조방법 |
KR102503732B1 (ko) | 2017-11-30 | 2023-02-27 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20200128253A (ko) * | 2019-05-02 | 2020-11-12 | 삼성디스플레이 주식회사 | 표시장치 |
-
2019
- 2019-07-22 KR KR1020190088190A patent/KR20210011529A/ko active Search and Examination
-
2020
- 2020-04-01 JP JP2020065785A patent/JP7469943B2/ja active Active
- 2020-04-22 US US16/855,646 patent/US11700758B2/en active Active
- 2020-07-20 EP EP20186621.7A patent/EP3770965B1/en active Active
- 2020-07-21 CN CN202010705100.XA patent/CN112289826A/zh active Pending
-
2023
- 2023-07-10 US US18/349,943 patent/US20230363237A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070076393A1 (en) | 2005-09-30 | 2007-04-05 | Chang-Yong Jeong | Pad area and method of fabricating the same |
JP2015519588A (ja) | 2012-02-23 | 2015-07-09 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 電気機械システムデバイス |
JP2015072764A (ja) | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
US20170358642A1 (en) | 2016-06-10 | 2017-12-14 | Samsung Display Co., Ltd. | Display device |
US20170365653A1 (en) | 2016-06-21 | 2017-12-21 | Samsung Display Co., Ltd. | Display apparatus having grooved terminals and method of manufacturing the same |
JP2018006749A (ja) | 2016-06-28 | 2018-01-11 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
US20180097047A1 (en) | 2016-09-30 | 2018-04-05 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP3770965A2 (en) | 2021-01-27 |
CN112289826A (zh) | 2021-01-29 |
EP3770965A3 (en) | 2021-05-05 |
EP3770965B1 (en) | 2024-04-03 |
JP2021018415A (ja) | 2021-02-15 |
US20210028241A1 (en) | 2021-01-28 |
KR20210011529A (ko) | 2021-02-02 |
US11700758B2 (en) | 2023-07-11 |
US20230363237A1 (en) | 2023-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7469943B2 (ja) | 表示装置及び表示装置の製造方法 | |
EP2835831B1 (en) | Organic light emitting diode display | |
US11177340B2 (en) | Display device and method for manufacturing the same | |
US8981378B2 (en) | Mother substrate for organic light-emitting display apparatus | |
KR102199216B1 (ko) | 유기발광 디스플레이 장치 | |
KR20140104263A (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
KR20200143563A (ko) | 표시 장치 | |
US9911802B2 (en) | Display device and method for manufacturing the same | |
US11832471B2 (en) | Inorganic layer structure in bending area of display device and method of providing the same | |
US11678533B2 (en) | Display device including side terminal disposed along an inclined side surface thereof | |
TW201444079A (zh) | 有機發光顯示裝置及其製造方法 | |
TW201924071A (zh) | 一種薄膜電晶體陣列結構及其綁定區、綁定區的製作方法 | |
KR20200133890A (ko) | 표시 장치 및 그 제조 방법 | |
KR20210002287A (ko) | 표시 장치 및 그 제조 방법 | |
US11889724B2 (en) | Display device including a sealing area overlapping transfer wirings | |
CN113314569A (zh) | 显示装置 | |
KR20210074549A (ko) | 유기발광 표시장치 | |
KR20210079468A (ko) | 표시 장치 | |
KR20210080811A (ko) | 유기발광 표시장치 | |
KR20210065281A (ko) | 유기 발광 표시 장치 | |
CN113394244A (zh) | 显示母板及其制备方法、显示基板和显示装置 | |
KR20210062785A (ko) | 표시 장치 | |
KR20220049086A (ko) | 표시 장치 | |
KR20220007810A (ko) | 표시 장치 | |
KR20230068049A (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240405 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7469943 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |