JP7464627B2 - 放射線センサ素子及び方法 - Google Patents
放射線センサ素子及び方法 Download PDFInfo
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Description
101 半導体基板
102 前表面
103 後表面
104 ベース平面
110 複数のピクセル部
111 ピクセル部
112 ピクセル部
120 収集領域
121 収集ドーピングウェル
122 バルク接触領域
123 バルク接触ドーピングウェル
130 テクスチャ領域
135 高アスペクト比ナノ構造
136 光変換層
140 中間部
141 中間領域
150 誘電体材料
160 金属コーティング
170 シンチレータ
300 方法
301 半導体基板を用意する
302 収集領域を形成する
303 テクスチャ領域を形成する
304 中間部を形成する
305 シンチレータを結合する
Claims (12)
- 半導体基板(101)を備える放射線センサ素子(100)であって、前記半導体基板(101)は、第1の極性のバルク多数電荷キャリア、バルク屈折率、前記半導体基板(101)の前側を画定する前表面(102)、及び、前記前表面(102)の反対側に配置されて実質的にベース平面(104)に沿って延在する後表面(103)を有し、
前記放射線センサ素子(100)が複数のピクセル部(110)を備え、前記複数のピクセル部(110)の各ピクセル部(111,112)は、前記第1の極性と符号が反対の第2の極性の自由電荷キャリアを収集するための収集領域(120)を前記後表面(103)上に備え、
前記複数のピクセル部(110)の各ピクセル部(111,112)は、前記前表面(102)上にテクスチャ領域(130)を備え、前記テクスチャ領域(130)は、前記ベース平面(104)に対して垂直な厚さ方向に実質的に沿って延在するとともに光変換層(136)を形成する高アスペクト比ナノ構造(135)を備え、前記光変換層(136)は、シンチレータ(170)によって放出されて前記半導体基板(101)の前記前側から前記ピクセル部に入射する光の反射を低減するために前記バルク屈折率に向かって徐々に変化する有効屈折率を有し、
前記放射線センサ素子(100)は、前記複数のピクセル部(110)のうちの2つのピクセル部(111,112)間にある中間部(140)を備え、前記中間部(140)は、前記2つのピクセル部(111,112)のいずれかのテクスチャ領域(130)の二乗平均平方根粗さであるRMS粗さよりも低いRMS粗さを伴う中間領域(141)を前記前表面(102)上に備え、
前記放射線センサ素子(100)は、前記中間領域(141)に結合される前記シンチレータ(170)を備える、
放射線センサ素子(100)であって、
前記中間領域(141)のRMS粗さは、前記2つのピクセル部(111,112)のいずれかのテクスチャ領域(130)のRMS粗さの0.2倍又は0.1倍又は0.05倍又は0.01倍以下である放射線センサ素子(100)。 - 前記中間領域(141)が前記ベース平面(104)と略平行に延在する、請求項1に記載の放射線センサ素子(100)。
- 前記2つのピクセル部(111,112)のテクスチャ領域(130)は、前記ベース平面(104)までの最大距離dtr maxを有し、前記中間領域(141)は、dtr maxよりも大きい前記ベース平面(104)までの最小距離dir minを有する、請求項1又は2に記載の放射線センサ素子(100)。
- 前記半導体基板(101)の前記前側に金属コーティング(160)を備え、前記ベース平面(104)上の前記金属コーティング(160)の投影が前記ベース平面(104)上の前記中間領域(141)の投影と交差する、請求項1から3のいずれか一項に記載の放射線センサ素子(100)。
- 前記半導体基板(101)及び前記高アスペクト比ナノ構造(135)がシリコンSiから形成される、請求項1から4のいずれか一項に記載の放射線センサ素子(100)。
- 前記放射線センサ素子(100)は、前記高アスペクト比ナノ構造(135)をコンフォーマルコーティングする誘電体材料(150)を備える、請求項1から5のいずれか一項に記載の放射線センサ素子(100)。
- 前記誘電体材料(150)が前記第2の極性の正味電荷を有する、請求項6に記載の放射線センサ素子(100)。
- 前記収集領域(120)は、前記第2の極性の多数電荷キャリアを伴う収集ドーピングウェル(121)によって画定される、請求項1から7のいずれか一項に記載の放射線センサ素子(100)。
- 前記半導体基板(101)の前記前側に配置されるシンチレータ(170)を備える、請求項1から8のいずれか一項に記載の放射線センサ素子(100)。
- 複数のピクセル部を備える放射線センサ素子を製造するための方法(300)において、
半導体基板を用意するプロセス(301)であって、前記半導体基板が、第1の極性のバルク多数電荷キャリア、バルク屈折率、前記半導体基板の前側を画定する前表面、及び、前記前表面の反対側に配置されて実質的にベース平面に沿って延在する後表面を有する、プロセス(301)と、
前記複数のピクセル部のそれぞれのピクセル部ごとに、前記第1の極性と符号が反対の第2の極性の自由電荷キャリアを収集するための収集領域を前記後表面上に形成するプロセス(302)と、
前記複数のピクセル部のそれぞれのピクセル部ごとに、前記前表面上にテクスチャ領域を形成するプロセス(303)であって、前記テクスチャ領域が、前記ベース平面に対して垂直な厚さ方向に実質的に沿って延在するとともに光変換層を形成する高アスペクト比ナノ構造を備え、前記光変換層が、シンチレータによって放出されて前記半導体基板(101)の前記前側から前記ピクセル部に入射する光の反射を低減するために前記バルク屈折率に向かって徐々に変化する有効屈折率を有する、プロセス(303)と、
前記複数のピクセル部のうちの2つのピクセル部間に中間部を形成するプロセス(304)であって、前記中間部が、前記2つのピクセル部のいずれかのテクスチャ領域の二乗平均平方根粗さであるRMS粗さよりも低いRMS粗さを伴う中間領域を前記前表面上に備える、プロセス(304)と、
前記シンチレータを前記中間領域上に結合するプロセス(305)と、
を含み、
前記中間領域のRMS粗さは、前記2つのピクセル部のいずれかのテクスチャ領域のRMS粗さの0.2倍又は0.1倍又は0.05倍又は0.01倍以下である、
方法(300)。 - テクスチャ領域を形成する前記プロセス(303)は、金属支援化学エッチングMACEステップ、大気ドライエッチングADEステップ、及び/又は、反応性イオンエッチングRIEステップを含む、請求項10に記載の方法(300)。
- 前記放射線センサ素子が請求項1から9のいずれか一項に記載の放射線センサ素子(100)である、請求項10又は11に記載の方法(300)。
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FI20195457A FI20195457A1 (en) | 2019-05-31 | 2019-05-31 | Radiation sensor element and method |
FI20195457 | 2019-05-31 | ||
PCT/FI2020/050352 WO2020240087A1 (en) | 2019-05-31 | 2020-05-26 | Radiation sensor element and method |
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JP7464627B2 true JP7464627B2 (ja) | 2024-04-09 |
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EP (1) | EP3925010A4 (ja) |
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CN (1) | CN113994469A (ja) |
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JP2003086827A (ja) | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2004296827A (ja) | 2003-03-27 | 2004-10-21 | Hamamatsu Photonics Kk | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
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DE102017120499A1 (de) * | 2017-05-29 | 2018-11-29 | Friedrich-Schiller-Universität Jena | Strahlungsdetektierendes Halbleiterbauelement |
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JP2004296827A (ja) | 2003-03-27 | 2004-10-21 | Hamamatsu Photonics Kk | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
JP2013033864A (ja) | 2011-08-02 | 2013-02-14 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、および電子機器 |
JP2015220313A (ja) | 2014-05-16 | 2015-12-07 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
WO2016017305A1 (ja) | 2014-07-31 | 2016-02-04 | ソニー株式会社 | 画素回路、半導体光検出装置および放射線計数装置 |
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US11810987B2 (en) | 2023-11-07 |
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US20230420585A1 (en) | 2023-12-28 |
WO2020240087A1 (en) | 2020-12-03 |
JP2022535762A (ja) | 2022-08-10 |
CN113994469A (zh) | 2022-01-28 |
FI20195457A1 (en) | 2020-12-01 |
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