JP7458267B2 - 基板処理装置及び基板搬送方法 - Google Patents
基板処理装置及び基板搬送方法 Download PDFInfo
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- JP7458267B2 JP7458267B2 JP2020138838A JP2020138838A JP7458267B2 JP 7458267 B2 JP7458267 B2 JP 7458267B2 JP 2020138838 A JP2020138838 A JP 2020138838A JP 2020138838 A JP2020138838 A JP 2020138838A JP 7458267 B2 JP7458267 B2 JP 7458267B2
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- 239000000758 substrate Substances 0.000 title claims description 158
- 238000000034 method Methods 0.000 title claims description 67
- 238000010926 purge Methods 0.000 claims description 58
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 95
- 238000010586 diagram Methods 0.000 description 29
- 238000005192 partition Methods 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
2 プロセスチャンバ
3 搬送室
4 ロードロック室
5 ゲートバルブ
6 ロードロックパネル
7 制御部
8 ローダ
42 開口部
51U ゲートカバー
51L ゲートカバー
55 ガイドレール
61 ノズル(噴出部)
421U 縁部
421L 縁部
422U 縁部
422L 縁部
641U 排気口
642U 排気口
643U 排気口
644U 排気口
645U 排気口
646U 排気口
641L 排気口
642L 排気口
643L 排気口
644L 排気口
645L 排気口
646L 排気口
Claims (11)
- 基板を大気圧よりも陽圧に制御された外部空間に搬出する際に大気圧環境に制御され前記基板が通過する内部空間を有する基板搬出入モジュールと、
該基板搬出入モジュールに設けられ、前記内部空間と前記外部空間とを連通する開口部と、
前記開口部に対して設けられ、搬送空間を有するゲートバルブと、
前記外部空間側から前記開口部の縁部に向かってパージガスを噴出する噴出部と、
前記開口部とは異なる経路で前記搬送空間を排気する排気口と、
を備える、
基板処理装置。 - 前記排気口は、前記開口部の縁部に沿って複数設けられる、
請求項1に記載の基板処理装置。 - 前記排気口は、開口部の開口中心軸方向と交差する中心軸方向を有する、
請求項1又は請求項2に記載の基板処理装置。 - 前記排気口は、前記搬送空間の下方に設けられた排気口を含む、
請求項1~3のいずれか1項に記載の基板処理装置。 - 前記内部空間は、上側内部空間及び下側内部空間を含み、
前記搬送空間は、前記上側内部空間に連通する上側搬送空間及び前記下側内部空間に連通する下側搬送空間を含み、
前記排気口は、前記上側搬送空間及び前記下側搬送空間のいずれにも設けられる請求項1~4のいずれか1項に記載の基板処理装置。 - 前記噴出部は、シャワープレートである、
請求項1~5のいずれか1項に記載の基板処理装置。 - 前記基板搬出入モジュールは、前記外部空間を有するローダに連結可能に構成されるロードロック室である、
請求項1~6のいずれか1項に記載の基板処理装置。 - 前記ゲートバルブは、前記開口部の縁部のうち第1の方向に延在する第1の縁部に沿って移動する弁体、及び、当該弁体の移動方向をガイドするガイドレールを含み、
前記噴出部は、前記ガイドレールに向かって前記パージガスを噴出する、
請求項1~7のいずれか1項に記載の基板処理装置。 - 前記ガイドレールを腐蝕させる可能性のある処理ガスを用いて前記基板を処理するプロセスチャンバを備える、
請求項8に記載の基板処理装置。 - 前記処理ガスは、塩素原子を含む、
請求項9に記載の基板処理装置。 - 基板を大気圧よりも陽圧に制御された外部空間に搬出する際に大気圧環境に制御され前記基板が通過する内部空間を有する基板搬出入モジュールと、該基板搬出入モジュールに設けられ、前記内部空間と、前記外部空間とを連通する開口部と、開口部に対して設けられ、搬送空間を有するゲートバルブと、を備える基板処理装置において、
前記開口部よりも前記外部空間側から前記開口部の縁部に向かってパージガスを噴出するとともに前記開口部とは異なる経路で前記搬送空間を排気するステップ、
を含む、
基板搬送方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020138838A JP7458267B2 (ja) | 2020-08-19 | 2020-08-19 | 基板処理装置及び基板搬送方法 |
CN202110907202.4A CN114078729A (zh) | 2020-08-19 | 2021-08-09 | 基片处理装置和基片运送方法 |
KR1020210105506A KR102580036B1 (ko) | 2020-08-19 | 2021-08-10 | 기판 처리 장치 및 기판 반송 방법 |
TW110129435A TW202226428A (zh) | 2020-08-19 | 2021-08-10 | 基板處理裝置及基板搬送方法 |
Applications Claiming Priority (1)
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JP2020138838A JP7458267B2 (ja) | 2020-08-19 | 2020-08-19 | 基板処理装置及び基板搬送方法 |
Publications (2)
Publication Number | Publication Date |
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JP2022034907A JP2022034907A (ja) | 2022-03-04 |
JP7458267B2 true JP7458267B2 (ja) | 2024-03-29 |
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JP2020138838A Active JP7458267B2 (ja) | 2020-08-19 | 2020-08-19 | 基板処理装置及び基板搬送方法 |
Country Status (4)
Country | Link |
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JP (1) | JP7458267B2 (ja) |
KR (1) | KR102580036B1 (ja) |
CN (1) | CN114078729A (ja) |
TW (1) | TW202226428A (ja) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003109994A (ja) | 2001-09-26 | 2003-04-11 | Applied Materials Inc | 基板処理装置 |
US20080031710A1 (en) | 2006-08-01 | 2008-02-07 | Tokyo Electron Limited | Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber |
JP2008041719A (ja) | 2006-08-01 | 2008-02-21 | Tokyo Electron Ltd | 中間搬送室、基板処理システム、及び当該中間搬送室の排気方法 |
JP2009032877A (ja) | 2007-07-26 | 2009-02-12 | Tokyo Electron Ltd | 基板搬送モジュール及び基板処理システム |
WO2009031419A1 (ja) | 2007-09-03 | 2009-03-12 | Tokyo Electron Limited | 真空処理システム |
JP2009115242A (ja) | 2007-11-07 | 2009-05-28 | Tokyo Electron Ltd | ゲートバルブ装置および真空処理装置およびゲートバルブ装置における弁体の開放方法。 |
US20100084398A1 (en) | 2008-10-02 | 2010-04-08 | Applied Materials, Inc. | Balanced purge slit valve |
JP2011054928A (ja) | 2009-08-04 | 2011-03-17 | Tokyo Electron Ltd | ゲートバルブ及びそれを用いた基板処理システム |
JP2011061149A (ja) | 2009-09-14 | 2011-03-24 | Tokyo Electron Ltd | 共通搬送装置及びこれを用いた処理システム |
Family Cites Families (7)
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JP2003100838A (ja) | 2001-09-25 | 2003-04-04 | Sony Corp | 基板処理装置および基板処理方法 |
KR20070049693A (ko) * | 2005-11-09 | 2007-05-14 | 삼성전자주식회사 | 기판 가공 장치 |
JP4954728B2 (ja) * | 2007-01-26 | 2012-06-20 | 東京エレクトロン株式会社 | ゲートバルブの洗浄方法及び基板処理システム |
JP4985031B2 (ja) * | 2007-03-29 | 2012-07-25 | 東京エレクトロン株式会社 | 真空処理装置、真空処理装置の運転方法及び記憶媒体 |
KR20150090943A (ko) * | 2014-01-29 | 2015-08-07 | 세메스 주식회사 | 기판처리장치 및 방법 |
JP7105629B2 (ja) | 2018-06-20 | 2022-07-25 | 東京エレクトロン株式会社 | 自動教示方法及び制御装置 |
US11282728B2 (en) | 2018-06-29 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contamination control in semiconductor manufacturing systems |
-
2020
- 2020-08-19 JP JP2020138838A patent/JP7458267B2/ja active Active
-
2021
- 2021-08-09 CN CN202110907202.4A patent/CN114078729A/zh active Pending
- 2021-08-10 KR KR1020210105506A patent/KR102580036B1/ko active IP Right Grant
- 2021-08-10 TW TW110129435A patent/TW202226428A/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003109994A (ja) | 2001-09-26 | 2003-04-11 | Applied Materials Inc | 基板処理装置 |
US20080031710A1 (en) | 2006-08-01 | 2008-02-07 | Tokyo Electron Limited | Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber |
JP2008041719A (ja) | 2006-08-01 | 2008-02-21 | Tokyo Electron Ltd | 中間搬送室、基板処理システム、及び当該中間搬送室の排気方法 |
JP2009032877A (ja) | 2007-07-26 | 2009-02-12 | Tokyo Electron Ltd | 基板搬送モジュール及び基板処理システム |
WO2009031419A1 (ja) | 2007-09-03 | 2009-03-12 | Tokyo Electron Limited | 真空処理システム |
JP2009115242A (ja) | 2007-11-07 | 2009-05-28 | Tokyo Electron Ltd | ゲートバルブ装置および真空処理装置およびゲートバルブ装置における弁体の開放方法。 |
US20100084398A1 (en) | 2008-10-02 | 2010-04-08 | Applied Materials, Inc. | Balanced purge slit valve |
JP2011054928A (ja) | 2009-08-04 | 2011-03-17 | Tokyo Electron Ltd | ゲートバルブ及びそれを用いた基板処理システム |
JP2011061149A (ja) | 2009-09-14 | 2011-03-24 | Tokyo Electron Ltd | 共通搬送装置及びこれを用いた処理システム |
Also Published As
Publication number | Publication date |
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CN114078729A (zh) | 2022-02-22 |
TW202226428A (zh) | 2022-07-01 |
KR102580036B1 (ko) | 2023-09-18 |
JP2022034907A (ja) | 2022-03-04 |
KR20220022866A (ko) | 2022-02-28 |
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