JP7443430B2 - リアルタイムの力および膜応力制御を備えた基板支持体 - Google Patents
リアルタイムの力および膜応力制御を備えた基板支持体 Download PDFInfo
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- JP7443430B2 JP7443430B2 JP2022116938A JP2022116938A JP7443430B2 JP 7443430 B2 JP7443430 B2 JP 7443430B2 JP 2022116938 A JP2022116938 A JP 2022116938A JP 2022116938 A JP2022116938 A JP 2022116938A JP 7443430 B2 JP7443430 B2 JP 7443430B2
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- 239000000758 substrate Substances 0.000 title claims description 76
- 239000012528 membrane Substances 0.000 title description 5
- 238000012545 processing Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 238000005259 measurement Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 66
- 239000012530 fluid Substances 0.000 description 27
- 238000000429 assembly Methods 0.000 description 18
- 230000000712 assembly Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000004891 communication Methods 0.000 description 14
- 230000007704 transition Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000009420 retrofitting Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 231100000681 Certain safety factor Toxicity 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/266—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light by interferometric means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/268—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
- G01L11/025—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means using a pressure-sensitive optical fibre
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Description
高精度の製造作業において加工品は、欠陥を減らすために可能な限り小さいクランプ力によって保持され、加工品支持面との接触が最小限でなければならない。しかし、加工品に施される、チャッキング力を変えることのある表面処理、基板支持体の支持面の摩耗および汚染などの製造変動性の故に、また他の環境的影響の故に、製造要員はしばしば、上述の変動性、およびこれらの変動性のチャッキング力に対する影響を阻止するために、ある安全係数を得るための目標クランプ力を増加させて十分なクランプ力が加わることを確保することになる。
半導体製造業界で使用される大多数の基板支持体では、必要とされるよりも大きいクランプ力をかけること、すなわちオーバチャッキングが多い。オーバチャッキングにより、たとえば、加工品の裏側に穴が生じる、基板支持体の部品が加工品にめり込む、加工品における膜応力が増加する、かつ/または加工品の処理面の品質問題を引き起こすおそれのある微粒子が生じることによって、加工品が損傷することになる。加えて、加工品の振動と共に、加工品の異なるゾーンにおける不均衡なチャッキング力により、不定の歩留まりに関連した問題が生じる。
オーバチャッキング問題を減少させるための従来の手法には、クランプ力がかけられる前に、クランプ力に影響を及ぼし得る加工品の電位を測定することが含まれる。その場合、従来の手法では、測定された電位を、クランプ中の加工品の電位を補償するためのアルゴリズムに利用して、最小限のクランプ力を決定し、加える。しかし、従来手法の方法を用いても、加工品はなおしばしばオーバチャックされることがあり、その結果なお損傷を受ける。製造許容値がますます厳しくなり、コストを低減する必要性がより重要になるにつれて、より広い範囲の製造変動性に対処するためのより一定の、予測可能なクランプ力が得られる新規の手法が必要とされている。
別の実施形態では、処理チャンバが内部チャンバ容積を有する。基板支持体が、この内部チャンバ容積内に配置される。基板支持体はパックを有する。パックは、加工品支持面と、加工品支持面を出るガス孔とを有する。センサアセンブリが、ガス孔内に配置されると共に、加工品支持面に配置された加工品の撓みを示すメトリックを検出するように構成され、このセンサアセンブリは、ガス孔内に位置するときに、ガスがセンサアセンブリを通り越して流れることができるように構成される。
さらなる特徴および利点が、以下の「発明を実施するための形態」で論述され、一部は、その説明により当業者には容易に明らかになり、あるいは、以下の「発明を実施するための形態」、特許請求の範囲、および添付の図面を含めて、本明細書に記載の実施形態を実践することによって理解されよう。
上記の一般的な説明も以下の詳細な説明も、例示的なものにすぎず、特許請求の範囲の性質および特性を理解するための概要または枠組みを与えるものであることを理解されたい。添付の図面は、さらなる理解が得られるように含まれており、また本明細書に組み込まれ、その一部を構成している。図面は1つまたは複数の実施形態を示し、明細書と共に様々な実施形態の原理および動作を説明する役割を果たす。
本明細書で開示される実施形態には、1つまたは複数のセンサハウジングおよび撓みセンサを含むセンサアセンブリが含まれる。このセンサアセンブリは、静電チャック、台座、真空チャック、ヒータ、または他の、処理中に加工品を処理チャンバ内で保持するのに適しているアセンブリなどの基板支持アセンブリ内に配置されるように構成される。たとえば、センサアセンブリは、基板支持アセンブリの既存の裏側ガス送出孔の中に配置することができる。撓みセンサは、基板支持アセンブリ上に配置された、加工品にかかるクランプ力または他の力によって撓む加工品、すなわち半導体ウエハまたは基板などの、撓みのリアルタイム測定値を提供することができる。撓みセンサを使用して基板支持アセンブリ上の加工品の撓みを決定することによって、制御システムが、その測定された加工品の撓みを用いて、加工品にかかる力を決定することができる。制御システムは、撓みセンサからの情報を利用して加工品にかかるクランプ力を修正し、目標クランプ力を維持する。こうして、このクランプ力により加工品が基板支持アセンブリに固定され、製造作業中の過剰なクランプ力による加工品の不要な過度の撓みから生じる基板損傷が防止され得る。
処理チャンバ100は、たとえばシリコンウエハである基板などの加工品101の処理中に、チャンバ内部容積120内の減圧を維持するように適切に適合させることができる真空チャンバである。処理チャンバ100は、底面126を有するチャンバ本体106を含み、チャンバ内部容積120を密閉する蓋104によって覆われる。チャンバ本体106および蓋104は、アルミニウムなどの金属、または他の適切な材料で作ることができる。
一実施形態では、基板支持アセンブリ170は静電チャック122を含む。基板支持アセンブリ170はさらに、冷却プレート151および支持ベース152を含むことができる。支持ベース152は、支持体ハウジング149、ベローズアセンブリ110、および支持軸112を含むことができる。支持軸112は、図示の上方の処理位置と下方の加工品移送位置(図示せず)の間で基板支持アセンブリ170の垂直移動を行うことができるリフト機構113と結合することができる。ベローズアセンブリ110は、支持軸112のまわりに配置することができ、支持ベース152と処理チャンバ100の底面126との間に結合されて、処理チャンバ100の内部から真空が失われることを防止しながら基板支持アセンブリ170の垂直の動きを可能にする可撓性シールを提供することができる。
基板支持アセンブリ170上に配置された加工品101の温度調節が、冷却プレート151内に配置されている複数の冷却チャネル160によって容易になり得る。冷却チャネル160は流体供給源142と結合され、流体連結しており、この流体供給源は、水などの冷媒流体を供給するが、任意の適切な、ガスまたは液体である冷媒流体が使用されてよい。
裏側ガス通路218は、裏側ガス送出孔198と、裏側ガスをパック150の加工品支持面172へ供給するために裏側ガス送出孔に連結された移行導管210とを含むことができる。裏側ガス送出孔198内に配置されたセンサアセンブリ190が制御システム194に配線される実施形態では、センサアセンブリ190と制御システム194の間の通信結線284が、裏側ガス通路218を少なくとも一部は通って横切っていくことができる。図8に示される、センサアセンブリ896がリフトピン809の空洞820内に配置され、制御システム194に配線される実施形態では、センサアセンブリ896と制御システム194の間の通信結線884が、静電チャック122内のリフトピン孔を少なくとも一部は通って横切っていくことができる。
別の実施形態では、裏側ガスは、第2の開口334を通ってT字形連結部310に入る。配線通過固定具340は、第3の開口322に取り付けられて、センサアセンブリ190と制御システム194の間の通信を可能にしながら、第3の開口322を流体封止する。さらに他の実施形態では、T字形連結部310は、裏側ガスの流体供給源、および制御システム194への連通をパック150の裏側ガス送出孔198から分離する。
センサハウジング220は、分割プレート222および取付けヘッド224を含むことができる。分割プレート222および取付けヘッド224について、ここで図4A、図4Bおよび図5をさらに参照して論じる。図4Aは、センサアセンブリ190の分割プレート222の斜視図である。センサ280の自己整合が、六角形分割プレート222と共に円錐形取付けヘッド224を用いて実現され得る。図4Bは、分割プレート222の平面図である。図5は、センサアセンブリ190の取付けヘッド224の断面図である。
中心開口450は内周部402を有することができる。中心開口450は、内周部402から中心開口450の中へ延びる内側張出部420を有することができる。内側張出部420は内周部432を有することができる。中心開口450の内周部402は、センサ280を通せるように寸法設定される。内側張出部420の内周部432は、中心開口450の内周部402よりも小さい。内側張出部420の内周部432はまた、センサ280を内側張出部420によって支持できるように、センサ280の幅よりも小さい。こうして、取付けヘッド224内のセンサ280の位置は、裏側ガス送出孔198の中にセンサ280が精密に配置されるように構成することができる。
図5を簡単に参照すると、分割プレート222は複数の受け孔574を有する。分割プレート222の受け孔574は、取付けヘッド224からのピン474を受け入れる。したがって、分割プレート222は、あらかじめ定められたように取付けヘッド224と整合することができる。
本体501は、本体501を貫通して延びる複数の通路560、すなわち孔526、564を有することができる。通路560は、取付けヘッド224の孔464と整合することができる。したがって、通路560と孔464の組合せにより、流体がセンサハウジング220を越えて、すなわちセンサアセンブリ190を通り抜けて流れるための連続導管が得られる。一例では、流体が分割プレート222の底面507の内部開口575に入る。この流体は、分割プレート222を通り抜けて上方に、上面508に向かって移動する。流体は、分割プレート222内に形成された通路560に入り、取付けヘッド224の孔464の中に導かれ通過する。流体は、取付けヘッド424の上面409で孔464を出てから、パック150の加工品支持面172まで裏側ガス送出孔198を上昇し続ける。すなわち、通路560と孔464が一緒の組合せは、流体がセンサアセンブリ190を通過できるようにする。
加工品101は、クランプ力Fcがかかると静電チャック122に固定され得る。クランプ力Fcは、加工品101をメサ168に向けて引き寄せ、メサ168との接触と相俟って、加工品101が静電チャック122に対して動かないようにする。クランプ力Fcは、静電チャック122の加工品支持面172の全体にわたって同じではなく、実質的に類似もしていないことさえあり得る。クランプ力Fcのばらつきは、特に、材料の堆積によるパック150の変化、洗浄およびエッチングによる腐食、ならびに摩耗に原因があると考えられる。加えて、クランプ力Fcは、区域に分けられた静電チャック構成などにおいて、加工品支持面172の全体にわたって意図的に差異化することもできる。
Claims (12)
- 基板支持体上に配置された基板を処理する方法であって、
基板を基板支持体にチャッキングすることと、
前記基板支持体の裏側ガス孔内に配置されたセンサを用いて前記基板に加わるチャッキング力を監視することであって、前記センサが、
前記ガス孔内に配置されている、かつ加工品支持面に配置された加工品の撓みを示す測定値を検出するように構成されているセンサアセンブリであって、前記ガス孔内に位置するときに、ガスが前記センサアセンブリを通り越して流れることができるように構成される、センサアセンブリを含む、ことと、
前記裏側ガス孔を通して前記センサを通り越してガスを流すことと
を含む、方法。 - 前記センサアセンブリが、
多孔性センサハウジングと、
前記センサハウジング内に配置されたセンサと
を含む、請求項1に記載の方法。 - 前記センサを用いて、前記基板支持体上に配置された前記基板の撓みを測定することをさらに含む、請求項2に記載の方法。
- 前記基板の前記測定された撓みに基づいて、前記基板に加わる前記チャッキング力を調整することをさらに含む、請求項3に記載の方法。
- 前記基板に加わる前記チャッキング力を調整することが、クランプ電圧を調整することを含む、請求項4に記載の方法。
- 前記基板に加わる前記チャッキング力を調整することが、クランプ圧を調整することを含む、請求項4に記載の方法。
- 前記撓みが、前記基板に加わる目標クランプ力を維持するようにリアルタイムで測定される、請求項3に記載の方法。
- 前記裏側ガス孔を通して前記ガスを流すことが、前記センサアセンブリ内の1つまたは複数の孔を通してガスを流すことを含む、請求項3に記載の方法。
- 前記チャッキングされた基板に対してプロセスを実行することをさらに含む、請求項1に記載の方法。
- 基板支持体上に配置された基板に加わるクランプ力を調整する方法であって、
基板支持体上に配置された基板に加わるチャッキング力を監視することであって、前記チャッキング力が、前記基板支持体の裏側ガス供給孔内に配置されたセンサを用いて監視される、ことと、
前記センサを用いて、前記基板支持体上に配置された前記基板の撓みをリアルタイムで測定することと、
前記基板の前記測定された撓みに基づいて、前記基板に加わる前記チャッキング力を調整することと
を含む、方法。 - 前記基板に加わる前記チャッキング力を調整することが、クランプ電圧を調整することによって前記クランプ力を調整することを含む、請求項10に記載の方法。
- 前記基板に加わる前記チャッキング力を調整することが、クランプ真空圧を調整することによって前記クランプ力を調整することを含む、請求項10に記載の方法。
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Also Published As
Publication number | Publication date |
---|---|
SG10202002453XA (en) | 2020-05-28 |
TWI729429B (zh) | 2021-06-01 |
US20210066038A1 (en) | 2021-03-04 |
JP2018530150A (ja) | 2018-10-11 |
CN117976601A (zh) | 2024-05-03 |
US10879046B2 (en) | 2020-12-29 |
CN107039325A (zh) | 2017-08-11 |
CN107039325B (zh) | 2024-01-19 |
JP2022159321A (ja) | 2022-10-17 |
TW201944532A (zh) | 2019-11-16 |
CN206610799U (zh) | 2017-11-03 |
US20170076915A1 (en) | 2017-03-16 |
TW202036780A (zh) | 2020-10-01 |
TW201711132A (zh) | 2017-03-16 |
US11915913B2 (en) | 2024-02-27 |
KR20180041248A (ko) | 2018-04-23 |
US11676802B2 (en) | 2023-06-13 |
US20230253188A1 (en) | 2023-08-10 |
JP2021121030A (ja) | 2021-08-19 |
WO2017044201A1 (en) | 2017-03-16 |
TWI670792B (zh) | 2019-09-01 |
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JP7112565B2 (ja) | 2022-08-03 |
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