JP7432418B2 - 露光装置および露光方法 - Google Patents
露光装置および露光方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 16
- 238000012937 correction Methods 0.000 claims description 62
- 238000012545 processing Methods 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000032823 cell division Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013075 data extraction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
22 DMD(光変調素子アレイ)
30 コントローラ
40 ベクタデータ処理回路(ベクタデータ補正処理部)
Claims (10)
- 複数の光変調素子を2次元配列させた光変調素子アレイと、
パターンデータであるベクタデータを、ラスタデータに変換するラスタデータ変換処理部と、
パターン輪郭線を表すベクタデータを、パターン輪郭線を一方向に沿ってシフトさせた輪郭線補正ベクタデータに変換するベクタデータ補正処理部とを備え、
輪郭線ベクタデータと、輪郭線補正ベクタデータとに基づいて、多重露光を行うことを特徴とする露光装置。 - 前記ベクタデータ補正処理部が、異なるシフト量で、輪郭線ベクタデータを輪郭線補正ベクタデータに順次変換することを特徴とする請求項1に記載の露光装置。
- 前記ベクタデータ補正処理部が、輪郭線ベクタデータを、定められたシフト量で一方向の正側へシフトした第1正側補正ベクタデータと、上記シフト量とは異なるシフト量で一方向の正側へシフトした第2正側補正ベクタデータと、上記シフト量で一方向の負側へシフトした負側補正ベクタデータとに順次変換し、
輪郭線ベクタデータと、第1正側補正ベクタデータと、第2正側補正ベクタデータと、負側補正ベクタデータとに基づいて、多重露光を行うことを特徴とする請求項1または2に記載の露光装置。 - 前記ベクタデータ補正処理部が、輪郭線ベクタデータを、一方向の正側へシフトした正側補正ベクタデータと、前記一方向の負側へシフトした負側補正ベクタデータとに順次変換し、
輪郭線ベクタデータと、正側補正ベクタデータと、負側補正ベクタデータとに基づいて、多重露光を行うことを特徴とする請求項1または2に記載の露光装置。 - 前記ベクタデータ補正処理部が、光変調素子の投影エリアサイズ以下のシフト量で、輪郭線ベクタデータを、複数の輪郭線補正ベクタデータに順次変換することを特徴とする請求項1乃至4のいずれかに記載の露光装置。
- 前記シフト量が、主走査方向の分解能に応じたシフト量であることを特徴とする請求項5に記載の露光装置。
- 前記ベクタデータ補正処理部が、輪郭線ベクタデータを、副走査方向に応じた方向にシフトした副走査方向補正ベクタデータに変換することを特徴とする請求項1乃至6のいずれかに記載の露光装置。
- パターンデータであるベクタデータを、光変調素子の投影エリアに対応するラスタデータに変換し、
ラスタデータに基づいて多重露光を行う露光方法であって、
パターン輪郭線を表す輪郭線ベクタデータを、パターン輪郭線を一方向にシフトさせた輪郭線補正ベクタデータに変換し、
輪郭線ベクタデータに基づく露光と、輪郭線補正ベクタデータに基づく露光とを組み合わせた多重露光を行うことを特徴とする露光方法。 - 主走査方向に沿った光変調素子の投影エリアサイズ以下のシフト量によって、輪郭線ベクタデータを輪郭線補正ベクタデータに変換することを特徴とする請求項8に記載の露光方法。
- 輪郭線ベクタデータを、副走査方向に応じた方向にシフトした副走査方向補正ベクタデータに変換することを特徴とする請求項8または9に記載の露光方法。
Priority Applications (4)
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JP2020055610A JP7432418B2 (ja) | 2020-03-26 | 2020-03-26 | 露光装置および露光方法 |
TW109126309A TWI833032B (zh) | 2020-03-26 | 2020-08-04 | 曝光裝置及曝光方法 |
KR1020200105408A KR20210120791A (ko) | 2020-03-26 | 2020-08-21 | 노광 장치 및 노광 방법 |
CN202011470253.7A CN113448176B (zh) | 2020-03-26 | 2020-12-15 | 曝光装置和曝光方法 |
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JP2020055610A JP7432418B2 (ja) | 2020-03-26 | 2020-03-26 | 露光装置および露光方法 |
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JP2021157000A JP2021157000A (ja) | 2021-10-07 |
JP7432418B2 true JP7432418B2 (ja) | 2024-02-16 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001042544A (ja) | 1999-07-30 | 2001-02-16 | Dainippon Printing Co Ltd | 高精細露光方法および装置 |
US20020171047A1 (en) | 2001-03-28 | 2002-11-21 | Chan Kin Foeng | Integrated laser diode array and applications |
JP2009290119A (ja) | 2008-05-30 | 2009-12-10 | Orc Mfg Co Ltd | 描画データを補正可能な露光装置 |
JP2018081153A (ja) | 2016-11-14 | 2018-05-24 | 株式会社アドテックエンジニアリング | ダイレクトイメージング露光装置及びダイレクトイメージング露光方法 |
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JPH07240361A (ja) * | 1994-03-01 | 1995-09-12 | Fujitsu Ltd | レジストパターン形成方法 |
US6425669B1 (en) * | 2000-05-24 | 2002-07-30 | Ball Semiconductor, Inc. | Maskless exposure system |
JP5414281B2 (ja) * | 2009-01-05 | 2014-02-12 | 大日本スクリーン製造株式会社 | 露光装置および露光方法 |
JP5373518B2 (ja) | 2009-09-15 | 2013-12-18 | 大日本スクリーン製造株式会社 | データ変換方法、描画システムおよびプログラム |
WO2017144379A1 (en) * | 2016-02-22 | 2017-08-31 | Asml Netherlands B.V. | Separation of contributions to metrology data |
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- 2020-03-26 JP JP2020055610A patent/JP7432418B2/ja active Active
- 2020-08-04 TW TW109126309A patent/TWI833032B/zh active
- 2020-08-21 KR KR1020200105408A patent/KR20210120791A/ko active Search and Examination
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001042544A (ja) | 1999-07-30 | 2001-02-16 | Dainippon Printing Co Ltd | 高精細露光方法および装置 |
US20020171047A1 (en) | 2001-03-28 | 2002-11-21 | Chan Kin Foeng | Integrated laser diode array and applications |
JP2009290119A (ja) | 2008-05-30 | 2009-12-10 | Orc Mfg Co Ltd | 描画データを補正可能な露光装置 |
JP2018081153A (ja) | 2016-11-14 | 2018-05-24 | 株式会社アドテックエンジニアリング | ダイレクトイメージング露光装置及びダイレクトイメージング露光方法 |
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Publication number | Publication date |
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JP2021157000A (ja) | 2021-10-07 |
TW202137039A (zh) | 2021-10-01 |
TWI833032B (zh) | 2024-02-21 |
KR20210120791A (ko) | 2021-10-07 |
CN113448176A (zh) | 2021-09-28 |
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