JP7422024B2 - セラミックス構造体、静電チャック、基板固定装置 - Google Patents
セラミックス構造体、静電チャック、基板固定装置 Download PDFInfo
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- JP7422024B2 JP7422024B2 JP2020117316A JP2020117316A JP7422024B2 JP 7422024 B2 JP7422024 B2 JP 7422024B2 JP 2020117316 A JP2020117316 A JP 2020117316A JP 2020117316 A JP2020117316 A JP 2020117316A JP 7422024 B2 JP7422024 B2 JP 7422024B2
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- 239000000919 ceramic Substances 0.000 title claims description 84
- 239000000758 substrate Substances 0.000 title claims description 61
- 239000004020 conductor Substances 0.000 claims description 108
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 61
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 47
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 39
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 31
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 28
- 229910052721 tungsten Inorganic materials 0.000 claims description 28
- 239000010937 tungsten Substances 0.000 claims description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 25
- 229910052702 rhenium Inorganic materials 0.000 claims description 24
- 229910001080 W alloy Inorganic materials 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052863 mullite Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910000691 Re alloy Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 33
- 238000010304 firing Methods 0.000 description 19
- 238000005245 sintering Methods 0.000 description 16
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000002826 coolant Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000010344 co-firing Methods 0.000 description 5
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- 238000004458 analytical method Methods 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052851 sillimanite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Description
[基板固定装置の構造]
図1は、第1実施形態に係る基板固定装置を簡略化して例示する図であり、図1(a)は断面図、図1(b)は図1(a)の熱電対のみを示す部分拡大斜視図である。
基板固定装置1は、ベースプレート10の一方の面10aに搭載された静電チャック30により吸着対象物である基板(ウェハ等)を吸着保持する装置である。
図2及び図3は、第1実施形態に係る基板固定装置の製造工程を例示する図である。図2及び図3を参照しながら、基板固定装置1の製造工程について説明する。
第2実施形態では、セラミックス基板と熱電素子とを備えた熱電部品の例を示す。なお、第2実施形態において、既に説明した実施形態と同一構成部品についての説明は省略する場合がある。
5 熱電部品
10 ベースプレート
10x、10y 貫通孔
20 接着層
30 静電チャック
31 基体
31a 載置面
32 静電電極
32P、33P、341P、342P 金属ペースト
33 発熱体
34 熱電対
34c 測温接点
40 制御部
51 セラミックス基板
53、54 ビア
55 熱電対+脚
56 熱電対-脚
57、58 外部電極端子
311、312、313、314、315 グリーンシート
341 第1導体部
341a 第1水平部
341b 第1垂直部
342 第2導体部
342a 第2水平部
342b 第2垂直部
343 第1線材部
344 第2線材部
Claims (15)
- 基体と、
前記基体と接する部分を有する熱電素子と、を有し、
前記基体は、酸化アルミニウムからなるセラミックスであり、
前記熱電素子は、タングステンとレニウムとの合金を主成分とし、酸化ニッケル、酸化アルミニウム、二酸化ケイ素を含む焼成体である導体部を含むセラミックス構造体。 - 前記導体部は、タングステンに対して酸化ニッケルの添加量が0.2~1.0wt%である請求項1に記載のセラミックス構造体。
- 前記導体部は、タングステンに対して酸化アルミニウムの添加量が0.2~3.0wt%、二酸化ケイ素の添加量が0.2~3.0wt%である請求項1又は2に記載のセラミックス構造体。
- 前記導体部に含まれるタングステンの平均粒径が0.5μm~3.0μm、レニウムの平均粒径が1.5μm~4.5μm、酸化ニッケルの平均粒径が5.0μm~15.0μm、酸化アルミニウムの平均粒径が0.1μm~4.0μm、二酸化ケイ素の平均粒径が0.1μm~12.0μmである請求項1乃至3の何れか一項に記載のセラミックス構造体。
- タングステンの成分、レニウムの成分、及びニッケルの成分は前記基体内には存在せずに前記導体部内のみに存在し、アルミニウムの成分及びケイ素の成分は前記基体内と前記導体部内の両方に存在する請求項1乃至4の何れか一項に記載のセラミックス構造体。
- 前記基体内において、ケイ素の成分は前記基体と前記導体部との境界から20μmの範囲内のみに存在する請求項5に記載のセラミックス構造体。
- 前記基体と前記導体部との境界から20μmの範囲内に、アルミニウムとケイ素の複合酸化物層が形成されている請求項6に記載のセラミックス構造体。
- 前記複合酸化物層は、ムライト層、シリマイト層、又はムライト層とシリマイト層とが混在した層である請求項7に記載のセラミックス構造体。
- 前記基体は、酸化アルミニウムの純度が99.5%以上である請求項1乃至8の何れか一項に記載のセラミックス構造体。
- 前記基体は、酸化アルミニウムに対する相対密度が97%以上である請求項1乃至9の何れか一項に記載のセラミックス構造体。
- 前記基体は、酸化アルミニウムの平均粒径が1.0μm~3.0μmである請求項1乃至10の何れか一項に記載のセラミックス構造体。
- 前記導体部は、第1導体部及び第2導体部を含み、
前記熱電素子は、前記第1導体部と前記第2導体部の一端同士が接合されて測温接点を形成する熱電対であり、
前記第1導体部は、タングステンとレニウムとの合金(Re5重量%)を主成分とし、酸化ニッケル、酸化アルミニウム、二酸化ケイ素を含む焼成体であり、
前記第2導体部は、タングステンとレニウムとの合金(Re26重量%)を主成分とし、酸化ニッケル、酸化アルミニウム、二酸化ケイ素を含む焼成体である請求項1乃至11の何れか一項に記載のセラミックス構造体。 - 前記第1導体部及び前記第2導体部は複数個ずつ設けられ、前記第1導体部と前記第2導体部は隣接して交互に配置されている請求項12に記載のセラミックス構造体。
- 請求項1乃至12の何れか一項に記載のセラミックス構造体において、前記基体に内蔵された静電電極を有する静電チャック。
- ベースプレートと、
前記ベースプレートの一方の面に搭載された請求項14に記載の静電チャックと、を有する基板固定装置。
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KR1020210080557A KR20220005984A (ko) | 2020-07-07 | 2021-06-22 | 세라믹 구조체, 정전 척 및 기판 고정 장치 |
TW110123678A TW202207341A (zh) | 2020-07-07 | 2021-06-29 | 陶瓷結構、靜電夾盤及基板固定裝置 |
US17/365,182 US11658015B2 (en) | 2020-07-07 | 2021-07-01 | Ceramic structure, electrostatic chuck and substrate fixing device |
CN202110766189.5A CN113903698A (zh) | 2020-07-07 | 2021-07-07 | 陶瓷结构、静电吸盘以及基板固定装置 |
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JP2000233978A (ja) | 1999-02-16 | 2000-08-29 | Ibiden Co Ltd | 静電チャックの製造方法 |
JP2000286331A (ja) | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2012132892A (ja) | 2010-05-07 | 2012-07-12 | Zaiken:Kk | 熱電対の接着構造とその接着方法 |
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US20200370965A1 (en) * | 2018-02-28 | 2020-11-26 | Arthur Beckman | Thermopile Assembly Providing a Massive Electrical Series of Thermocouple Elements |
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