JP7393717B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP7393717B2 JP7393717B2 JP2022061856A JP2022061856A JP7393717B2 JP 7393717 B2 JP7393717 B2 JP 7393717B2 JP 2022061856 A JP2022061856 A JP 2022061856A JP 2022061856 A JP2022061856 A JP 2022061856A JP 7393717 B2 JP7393717 B2 JP 7393717B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- substrate
- frame
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 46
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 description 23
- 239000011347 resin Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012463 white pigment Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/395—Linear regulators
- H05B45/397—Current mirror circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Devices (AREA)
Description
図2及び図3は、実施形態に係る発光装置を示す平面図である。
図4は、実施形態に係る発光装置の基板を示す平面図である。
なお、図3では、発光装置の内部構造を示すため、一部の構成要素を省略又は透過させて示している。
図6は、図2のB-B’断面図である。
図5及び図6に示したように、第1部材51の上面51aは、第1枠部41の上面41a、第2枠部42の上面42a、及び第2部材52の上面52aよりも上方に位置している。第2部材52の上面52aは、第1枠部41の上面41a及び第2枠部42の上面42aと同じ高さにあっても良いし、図5及び図6に示したように、これらの上面よりも下方に位置していても良い。
まず、配線パターン14が形成された基板10上に、発光素子20及び電子部品30を実装する。次に、未硬化の樹脂材料を、発光素子20及び電子部品30を囲うように基板10上に配し、硬化させることで、第1枠部41及び第2枠部42を形成する。具体的には、第1枠部41及び第2枠部42は、例えば、基板10の上方に樹脂吐出装置のニードルを配置し、ニードルの先端から基板10上に未硬化の樹脂材料を吐出させながら、ニードルを移動させることにより形成される。ニードルから吐出された未硬化の樹脂材料は基板10上で濡れ広がり、断面視形状が略半円形状の第1枠部41及び第2枠部42として配置される。
続いて、第1枠部41の内側に第1部材51を形成する透光性の樹脂材料を流し込み、第2枠部42の内側に第2部材52を形成する非透光性の樹脂材料を流し込む。これらの樹脂を硬化させることで、第1部材51及び第2部材52が形成され、発光素子20及び電子部品30が封止される。なお、第1部材51及び第2部材52はどちらが先に形成されてもよい。
実施形態に係る発光装置1では、図5及び図6に示したように、発光素子20を被覆する第1部材51の上面51aが、第1枠部41の上面41a、第2枠部42の上面42a、及び第2部材52の上面52aよりも上方に位置している。発光素子20から発せられた光は、第1部材51の上面51aから取り出される。従って、この上面51aが、他の部材の上面41a、42a、及び52aよりも上方に位置することで、取り出された光が他の部材により反射又は吸収され難くなる。この結果、発光素子20から発せられた光を効率的に外部へ取り出すことができる。すなわち、本実施形態によれば、発光装置1の光取り出し効率を向上させることができる。
角部Cの内角を90度以上にすることで、角部Cにおいて樹脂材料が引けやすくなり、角部Cにおける上面52aの位置の上昇を抑制できる。この結果、上面51aの位置の上昇も抑制され、発光装置1を小型化できる。
なお第1枠部41、第2枠部42の少なくともいずれか1つが多角形状である場合、基板上に吐出された樹脂材料の広がりにより、多角形の角部の先端は丸みを帯びた形状、いわゆるアール状となっていてもよい。
発光装置1は、例えば図7に示す回路構成を備える。図7に示した例では、3つの発光素子20a~20c、2つの印刷抵抗15a~15c、1つの保護素子18a、1つのコンデンサ18b、 1つの整流ダイオード30a、3つのトランジスタ30b~30d、及び3つのサーミスタ30e~30gが設けられている。
うち、本実施形態に係る発光装置では、1つの整流ダイオード30a、3つのトランジスタ30b~30d、及び3つのサーミスタ30e~30gが電子部品として、第2枠部42内に配置されている。
図8及び図9は、実施形態の変形例に係る発光装置を示す平面図である。
図9では、発光装置の内部構造を示すため、一部の構成要素を省略又は透過させて示している。
図10に示したように、発光装置2においても、第1部材51の上面51aは、第1枠部41の上面41a、第2枠部42の上面42a、及び第2部材52の上面52aよりも上方に位置している。また、上面51aは、第3部材53の上面53aよりも上方に位置している。これにより、発光装置1と同様に、発光装置2においても、光取り出し効率を向上させることができる。このように、第1部材51の上面51aと他の部材の上面とが上述した位置関係にあれば、発光装置の具体的構成は適宜変更可能である。
Claims (8)
- 第1領域及び第2領域を含む第1面を有する基板と、
前記基板上に設けられ、前記第1領域を囲む第1枠部と、
前記第1領域の前記基板上に設けられた発光素子と、
前記第1枠部の内側に設けられ、前記発光素子を被覆する透光性の第1部材と、
前記第2領域の前記基板上に設けられ、前記発光素子と電気的に接続された電子部品と、
前記基板の厚さ方向に直交する第1方向に並んで設けられ、前記電子部品と電気的に接続された複数のピン孔と、
を備え、
前記電子部品は、前記厚さ方向および前記第1方向に直交する第2方向において、前記発光素子に対して前記複数のピン孔とは反対側に設けられ、
前記電子部品として、
前記発光素子と直列に接続され、互いに並列に接続された複数のトランジスタと、
前記複数のトランジスタと直列に接続されたサーミスタと、
前記複数のトランジスタ及び前記サーミスタと、前記複数のピン孔の1つと、の間に電気的に接続された整流ダイオードと、
が設けられ、
前記整流ダイオードと前記複数のピン孔の別の1つとの間に電気的に接続され、前記複数のトランジスタ及び前記サーミスタと並列に接続されたツェナーダイオードをさらに備え、
前記ツェナーダイオードは、前記厚さ方向において、前記基板と前記第1枠部との間に設けられた発光装置。 - 前記整流ダイオードと前記複数のピン孔の前記別の1つとの間に電気的に接続されたコンデンサをさらに備え、
前記ツェナーダイオード及び前記コンデンサは、並列に接続されている請求項1に記載の発光装置。 - 前記第1部材の上面は、前記第1枠部の上面よりも上方に位置する請求項1に記載の発光装置。
- 前記基板上に設けられ、前記第2領域を囲む第2枠部と、
前記第2枠部の内側に設けられ、前記電子部品を被覆する非透光性の第2部材と、を備える請求項1に記載の発光装置。 - 前記第1枠部の一部と前記第2枠部の一部は、一体に設けられ、
前記第1部材の上面は、前記第1枠部の上面、前記第2枠部の上面、及び前記第2部材の上面よりも上方に位置する請求項4に記載の発光装置。 - 前記第2部材の上面は、前記第1枠部の上面及び前記第2枠部の上面よりも下方に位置する請求項4に記載の発光装置。
- 前記電子部品は、前記サーミスタのベアチップ及び前記複数のトランジスタのベアチップを含む請求項1に記載の発光装置。
- 前記第1部材は、蛍光体を含有する請求項1に記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022061856A JP7393717B2 (ja) | 2018-07-20 | 2022-04-01 | 発光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018136824A JP6879270B2 (ja) | 2018-07-20 | 2018-07-20 | 発光装置 |
JP2021067536A JP7058388B2 (ja) | 2018-07-20 | 2021-04-13 | 発光装置 |
JP2022061856A JP7393717B2 (ja) | 2018-07-20 | 2022-04-01 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021067536A Division JP7058388B2 (ja) | 2018-07-20 | 2021-04-13 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022079733A JP2022079733A (ja) | 2022-05-26 |
JP7393717B2 true JP7393717B2 (ja) | 2023-12-07 |
Family
ID=69161347
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018136824A Active JP6879270B2 (ja) | 2018-07-20 | 2018-07-20 | 発光装置 |
JP2021067536A Active JP7058388B2 (ja) | 2018-07-20 | 2021-04-13 | 発光装置 |
JP2022061856A Active JP7393717B2 (ja) | 2018-07-20 | 2022-04-01 | 発光装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018136824A Active JP6879270B2 (ja) | 2018-07-20 | 2018-07-20 | 発光装置 |
JP2021067536A Active JP7058388B2 (ja) | 2018-07-20 | 2021-04-13 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US11063187B2 (ja) |
JP (3) | JP6879270B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6879270B2 (ja) * | 2018-07-20 | 2021-06-02 | 日亜化学工業株式会社 | 発光装置 |
JP1695410S (ja) * | 2021-01-26 | 2021-09-21 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151741A (ja) | 2000-11-08 | 2002-05-24 | Murata Mfg Co Ltd | 発光装置、実装基板およびこれを用いた電子機器 |
JP2004146639A (ja) | 2002-10-25 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 電子部品製造方法および電子部品 |
JP2006224440A (ja) | 2005-02-17 | 2006-08-31 | Toshiba Hokuto Electronics Corp | サーマルヘッド |
JP2010157486A (ja) | 2008-12-31 | 2010-07-15 | Chi Mei Lighting Technology Corp | 照明装置 |
JP2011119387A (ja) | 2009-12-02 | 2011-06-16 | Mitsubishi Electric Corp | 発光素子回路および液晶表示装置 |
JP2013115368A (ja) | 2011-11-30 | 2013-06-10 | Rohm Co Ltd | Ledモジュール |
JP2013222782A (ja) | 2012-04-16 | 2013-10-28 | Citizen Holdings Co Ltd | Ledモジュール |
US20150061513A1 (en) | 2013-08-30 | 2015-03-05 | Paragon Semiconductor Lighting Technology Co., Ltd. | Multichip package structure |
JP2014143396A5 (ja) | 2013-11-13 | 2016-12-15 | ||
JP2017139404A (ja) | 2016-02-05 | 2017-08-10 | シチズン時計株式会社 | Ledモジュール |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209338A (ja) * | 1997-01-22 | 1998-08-07 | Matsushita Electric Ind Co Ltd | 半導体回路装置とその製造方法 |
JPWO2005104249A1 (ja) | 2004-04-21 | 2007-08-30 | 松下電器産業株式会社 | 発光素子駆動用半導体チップ、発光装置、及び照明装置 |
JP2008108861A (ja) * | 2006-10-25 | 2008-05-08 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 光源にフレキシブルpcbが直結された発光ダイオードパッケージ |
JP2011071242A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
JP2012028699A (ja) * | 2010-07-27 | 2012-02-09 | Panasonic Corp | 半導体装置、リードフレーム集合体及びその製造方法 |
JP2012109532A (ja) | 2010-09-08 | 2012-06-07 | Mitsubishi Chemicals Corp | 発光装置、照明装置、及びレンズ |
TWI442540B (zh) * | 2010-10-22 | 2014-06-21 | Paragon Sc Lighting Tech Co | 直接電性連接於交流電源之多晶封裝結構 |
JP5813467B2 (ja) * | 2011-11-07 | 2015-11-17 | 新光電気工業株式会社 | 基板、発光装置及び基板の製造方法 |
US8876334B2 (en) * | 2012-01-16 | 2014-11-04 | Paragon Semiconductor Lighting Technology Co., Ltd. | Light-mixing multichip package structure |
JP6291800B2 (ja) | 2012-12-26 | 2018-03-14 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
JP6244906B2 (ja) * | 2013-12-27 | 2017-12-13 | 日亜化学工業株式会社 | 半導体発光装置 |
JP6213428B2 (ja) * | 2014-03-12 | 2017-10-18 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP2015220035A (ja) | 2014-05-15 | 2015-12-07 | スタンレー電気株式会社 | Ledモジュール及びこれを備えた車両用灯具 |
US9373762B2 (en) * | 2014-06-17 | 2016-06-21 | Panasonic Intellectual Property Management Co., Ltd. | Electronic part package |
JP6524107B2 (ja) | 2014-09-29 | 2019-06-05 | シチズン時計株式会社 | Ledモジュール |
JP6458991B2 (ja) | 2015-02-23 | 2019-01-30 | 東芝ライテック株式会社 | 車両用照明装置および車両用灯具 |
JP6511887B2 (ja) * | 2015-03-18 | 2019-05-15 | 日亜化学工業株式会社 | 発光装置 |
JP2017021988A (ja) | 2015-07-10 | 2017-01-26 | 東芝ライテック株式会社 | 車両用発光装置、車両用照明装置および車両用灯具 |
JP6790602B2 (ja) | 2015-10-30 | 2020-11-25 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
EP3174109B1 (en) * | 2015-11-30 | 2020-11-18 | Nichia Corporation | Method of manufacturing a light emitting device |
TWI744221B (zh) * | 2015-12-04 | 2021-11-01 | 晶元光電股份有限公司 | 發光裝置 |
JP2017168207A (ja) | 2016-03-14 | 2017-09-21 | 東芝ライテック株式会社 | 車両用照明装置および車両用灯具 |
JP2017168274A (ja) | 2016-03-15 | 2017-09-21 | 東芝ライテック株式会社 | 車両用照明装置および車両用灯具 |
US10522730B2 (en) | 2016-03-18 | 2019-12-31 | Rohm Co., Ltd. | LED lighting apparatus |
JP6855663B2 (ja) * | 2016-03-18 | 2021-04-07 | ローム株式会社 | Led照明装置 |
JP6790416B2 (ja) * | 2016-03-31 | 2020-11-25 | 日亜化学工業株式会社 | 発光装置 |
JP6683000B2 (ja) | 2016-05-09 | 2020-04-15 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6738532B2 (ja) | 2016-05-27 | 2020-08-12 | 東芝ライテック株式会社 | 車両用照明装置、および車両用灯具 |
JP2017224466A (ja) | 2016-06-15 | 2017-12-21 | 東芝ライテック株式会社 | 車両用照明装置、および車両用灯具 |
JP6724709B2 (ja) | 2016-10-13 | 2020-07-15 | 東芝ライテック株式会社 | 車両用照明装置および車両用灯具 |
JP2018085300A (ja) | 2016-11-25 | 2018-05-31 | 東芝ライテック株式会社 | 車両用照明装置および車両用灯具 |
JP2020004688A (ja) | 2018-07-02 | 2020-01-09 | 株式会社小糸製作所 | 灯具ユニット及び車両用灯具並びに灯具ユニット製造方法 |
JP6879270B2 (ja) * | 2018-07-20 | 2021-06-02 | 日亜化学工業株式会社 | 発光装置 |
JP2020140792A (ja) | 2019-02-27 | 2020-09-03 | ローム株式会社 | Led照明装置 |
-
2018
- 2018-07-20 JP JP2018136824A patent/JP6879270B2/ja active Active
-
2019
- 2019-07-19 US US16/517,109 patent/US11063187B2/en active Active
-
2021
- 2021-04-13 JP JP2021067536A patent/JP7058388B2/ja active Active
- 2021-06-11 US US17/345,335 patent/US11929454B2/en active Active
-
2022
- 2022-04-01 JP JP2022061856A patent/JP7393717B2/ja active Active
-
2023
- 2023-03-16 US US18/184,752 patent/US11935991B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151741A (ja) | 2000-11-08 | 2002-05-24 | Murata Mfg Co Ltd | 発光装置、実装基板およびこれを用いた電子機器 |
JP2004146639A (ja) | 2002-10-25 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 電子部品製造方法および電子部品 |
JP2006224440A (ja) | 2005-02-17 | 2006-08-31 | Toshiba Hokuto Electronics Corp | サーマルヘッド |
JP2010157486A (ja) | 2008-12-31 | 2010-07-15 | Chi Mei Lighting Technology Corp | 照明装置 |
JP2011119387A (ja) | 2009-12-02 | 2011-06-16 | Mitsubishi Electric Corp | 発光素子回路および液晶表示装置 |
JP2013115368A (ja) | 2011-11-30 | 2013-06-10 | Rohm Co Ltd | Ledモジュール |
JP2013222782A (ja) | 2012-04-16 | 2013-10-28 | Citizen Holdings Co Ltd | Ledモジュール |
US20150061513A1 (en) | 2013-08-30 | 2015-03-05 | Paragon Semiconductor Lighting Technology Co., Ltd. | Multichip package structure |
JP2014143396A5 (ja) | 2013-11-13 | 2016-12-15 | ||
JP2017139404A (ja) | 2016-02-05 | 2017-08-10 | シチズン時計株式会社 | Ledモジュール |
Non-Patent Citations (1)
Title |
---|
トランジスタ技術編集部,実用電子回路ハンドブック(1),第33版,日本,CQ出版株式会社,1990年03月10日,P.375-377 |
Also Published As
Publication number | Publication date |
---|---|
US20210305467A1 (en) | 2021-09-30 |
US11063187B2 (en) | 2021-07-13 |
US11929454B2 (en) | 2024-03-12 |
JP2021121019A (ja) | 2021-08-19 |
JP2020013949A (ja) | 2020-01-23 |
US20200028034A1 (en) | 2020-01-23 |
JP7058388B2 (ja) | 2022-04-22 |
JP2022079733A (ja) | 2022-05-26 |
US20230223500A1 (en) | 2023-07-13 |
JP6879270B2 (ja) | 2021-06-02 |
US11935991B2 (en) | 2024-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10950759B2 (en) | LED module | |
KR101360732B1 (ko) | 발광 다이오드 패키지 | |
US9472743B2 (en) | Light emitting diode package | |
JP5698424B2 (ja) | 基体にesd保護を組み入れた発光ダイオード用基体 | |
JP7393717B2 (ja) | 発光装置 | |
TW200933927A (en) | Light emitting diode package | |
US8890203B2 (en) | LED module | |
US10069056B2 (en) | Light emitting device | |
JP7046796B2 (ja) | 発光装置 | |
US10714460B2 (en) | Light emitting device and manufacturing method thereof | |
US9605837B2 (en) | Lighting device | |
JP6855663B2 (ja) | Led照明装置 | |
JP2009177188A (ja) | 発光ダイオードパッケージ | |
US20170301842A1 (en) | Light emitting package structure | |
US20140291003A1 (en) | Connecting Element for a Multi-Chip Module and Multi-Chip Module | |
KR20120104817A (ko) | 발광소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220401 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230414 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230707 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230911 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231025 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231107 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7393717 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |