JP5698424B2 - 基体にesd保護を組み入れた発光ダイオード用基体 - Google Patents
基体にesd保護を組み入れた発光ダイオード用基体 Download PDFInfo
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- JP5698424B2 JP5698424B2 JP2005042144A JP2005042144A JP5698424B2 JP 5698424 B2 JP5698424 B2 JP 5698424B2 JP 2005042144 A JP2005042144 A JP 2005042144A JP 2005042144 A JP2005042144 A JP 2005042144A JP 5698424 B2 JP5698424 B2 JP 5698424B2
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- 239000000758 substrate Substances 0.000 title claims description 73
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000000919 ceramic Substances 0.000 claims description 49
- 239000011787 zinc oxide Substances 0.000 claims description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052582 BN Inorganic materials 0.000 claims description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- 239000002245 particle Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
- H05K1/0259—Electrostatic discharge [ESD] protection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49002—Electrical device making
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Thermistors And Varistors (AREA)
Description
12 LEDチップ
14 パッド
16 セラミック基体
18 相互接続部材
20 バイア
22 下側パッド
23 エポキシ
24 ZnO粒子
26 バインダ
28 電極
30 LEDパッケージ
32 基体
34 酸化亜鉛
36 金属層(電極)
40 セラミック基体
42 バイア
50 バリスタ
52 酸化亜鉛
54 金属層
56 金属化部材
60 LEDチップ
62 ワイヤー
63 ダイ取付用エポキシ
64 反射器
66 レンズ
70、76 バリスタ
72、74 セラミック基体
78、80 金属層
84、86 金属層
90 バリスタ
92 金属層
Claims (1)
- 上面及び下面を有するセラミック基体と、
上記上面に設けられ、半導体デバイスの電極に電気的に接続される少なくとも1つの第1の金属電極と、
上記下面に設けられ、印刷回路基板に電気的に接続される第2の金属電極と、を備え、
上記セラミック基体は、第1の金属酸化物を含む第1の領域を備え、上記第1の領域は、上記セラミック基体の上面の全体で、1またはそれ以上の層として形成された酸化亜鉛を含み、上記セラミック基体の上面の上に取付けられた半導体デバイスを静電気放電(ESD)から保護するバリスタを形成しており、
上記セラミック基体は、更に、上記第1の領域の下方に、第1の金属酸化物を含まない第2のセラミック材料を含む第2の領域を備え、上記第2の領域はバリスタを形成せず、
上記第2の領域は、酸化アルミニウム、窒化アルミニウム、炭化ケイ素、または窒化ホウ素のうちの1つからなり、
第1の金属層が、上記1またはそれ以上の層の上面に物理的に接触するように形成され、
第2の金属層が、上記1またはそれ以上の層の下面に物理的に接触し、前記第1の金属層の少なくとも一部に対向するように形成されており、
上記1またはそれ以上の層は、上記第1の金属層と上記第2の金属層とにまたがってESD電圧が印加された時に上記第1の金属層と上記第2の金属層との間に低抵抗路を発生するようになっていることを特徴とするデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/787657 | 2004-02-25 | ||
US10/787,657 US7279724B2 (en) | 2004-02-25 | 2004-02-25 | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005244220A JP2005244220A (ja) | 2005-09-08 |
JP5698424B2 true JP5698424B2 (ja) | 2015-04-08 |
Family
ID=34861924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005042144A Active JP5698424B2 (ja) | 2004-02-25 | 2005-02-18 | 基体にesd保護を組み入れた発光ダイオード用基体 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7279724B2 (ja) |
EP (1) | EP1580809B1 (ja) |
JP (1) | JP5698424B2 (ja) |
TW (1) | TWI377692B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103889683B (zh) * | 2011-10-24 | 2020-11-06 | 日精Asb机械株式会社 | 注射吹塑成型装置及其所使用的金属模具单元、以及注射吹塑成型方法 |
Families Citing this family (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001017320A1 (en) | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
US20100038121A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
US7825491B2 (en) * | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
US20100038119A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
US20100040896A1 (en) * | 1999-08-27 | 2010-02-18 | Lex Kosowsky | Metal Deposition |
CN100587560C (zh) * | 2003-04-01 | 2010-02-03 | 夏普株式会社 | 发光装置用组件、发光装置、背侧光照射装置、显示装置 |
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US7279724B2 (en) | 2007-10-09 |
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US7768754B2 (en) | 2010-08-03 |
US20070297108A1 (en) | 2007-12-27 |
TWI377692B (en) | 2012-11-21 |
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US20050184387A1 (en) | 2005-08-25 |
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