JP7386120B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP7386120B2 JP7386120B2 JP2020066516A JP2020066516A JP7386120B2 JP 7386120 B2 JP7386120 B2 JP 7386120B2 JP 2020066516 A JP2020066516 A JP 2020066516A JP 2020066516 A JP2020066516 A JP 2020066516A JP 7386120 B2 JP7386120 B2 JP 7386120B2
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- 239000000758 substrate Substances 0.000 title claims description 157
- 239000012530 fluid Substances 0.000 claims description 164
- 238000005192 partition Methods 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 22
- 239000007788 liquid Substances 0.000 description 16
- 230000006870 function Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000000352 supercritical drying Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
14 蓋部
15 支持トレイ(基板保持部)
16 シール部材
17 流路(導入流路)
57 流体供給部
100,100a チャンバ
101 開口部
111,121 凹部
112,122 隔壁
181 上側流路
182 バッファ空間
183 排出流路
185 下側流路
186 バッファ空間(下側バッファ空間)
187 排出流路(下側排出流路)
S 基板
SP 処理空間
Claims (8)
- 基板の表面を処理流体により処理する基板処理装置において、
上面に前記基板を水平姿勢で載置可能な平板状の基板保持部と、
前記基板が載置された前記基板保持部を収容可能な処理空間を内部に有するとともに、前記処理空間に連通し前記基板保持部が通過可能な開口部を側面に有するチャンバと、
シール部材を介して前記チャンバに当接し前記開口部を閉塞する蓋部と
を備え、
前記基板保持部は前記蓋部のチャンバ側側面に突設され、前記蓋部は前記基板保持部を前記処理空間に進入させた状態で前記開口部を閉塞し、
前記チャンバには、前記処理流体をチャンバ外から受け入れて前記処理空間に導入する導入流路が設けられ、前記導入流路は、前記開口部から見て前記処理空間内の前記基板よりも奥側で前記処理空間に開口し、
前記処理空間内の前記基板よりも前記開口部側で、前記処理空間の天井面と前記基板保持部の上面とがギャップを隔てて互いに平行に対向して、前記基板の上方を通過した前記処理流体を流通させる、流路断面形状が一定の上側流路を形成し、
前記上側流路は、前記蓋部、前記チャンバおよび前記シール部材で囲まれることにより形成されて前記上側流路より流路断面積の大きいバッファ空間に接続され、
前記バッファ空間に、前記処理流体をチャンバ外へ排出する排出流路が接続される、
基板処理装置。 - 前記上側流路と前記バッファ空間との接続部において前記処理流体の流通方向が90度以上変化する請求項1に記載の基板処理装置。
- 前記開口部が設けられた前記チャンバの側面のうち前記開口部の上方に、前記開口部の開口面よりも後退した凹部が形成されており、前記凹部よりも上方に配置された前記シール部材と前記蓋部とが前記凹部を閉塞して前記バッファ空間を形成する請求項1または2に記載の基板処理装置。
- 水平方向において、前記凹部の幅は前記開口部の開口幅以上である請求項3に記載の基板処理装置。
- 前記処理空間と前記凹部とが、水平な平板状の隔壁により隔てられている請求項3または4に記載の基板処理装置。
- 前記隔壁の先端と前記蓋部との間の隙間の大きさが、前記処理空間の天井面と前記基板保持部の上面とのギャップの大きさと等しい請求項5に記載の基板処理装置。
- 前記処理空間内の前記基板よりも前記開口部側で、前記基板保持部の下面と前記処理空間の底面とがギャップを隔てて互いに平行に対向して、前記基板の下方を通過した前記処理流体を流通させる、流路断面形状が一定の下側流路を形成し、
前記下側流路は、前記蓋部、前記チャンバおよび前記シール部材で囲まれることにより形成されて前記下側流路より流路断面積の大きい下側バッファ空間に接続され、
前記下側バッファ空間に、前記処理流体をチャンバ外へ排出する下側排出流路が接続される、
請求項1ないし6のいずれかに記載の基板処理装置。 - 前記処理流体は超臨界流体である請求項1ないし7のいずれかに記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020066516A JP7386120B2 (ja) | 2020-04-02 | 2020-04-02 | 基板処理装置 |
TW110111705A TWI779541B (zh) | 2020-04-02 | 2021-03-31 | 基板處理裝置 |
CN202110358019.3A CN113496921A (zh) | 2020-04-02 | 2021-04-01 | 基板处理装置 |
US17/219,931 US11955350B2 (en) | 2020-04-02 | 2021-04-01 | Substrate processing apparatus |
KR1020210042604A KR102439644B1 (ko) | 2020-04-02 | 2021-04-01 | 기판 처리 장치 |
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JP2020066516A JP7386120B2 (ja) | 2020-04-02 | 2020-04-02 | 基板処理装置 |
Publications (2)
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JP2021163915A JP2021163915A (ja) | 2021-10-11 |
JP7386120B2 true JP7386120B2 (ja) | 2023-11-24 |
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US (1) | US11955350B2 (ja) |
JP (1) | JP7386120B2 (ja) |
KR (1) | KR102439644B1 (ja) |
CN (1) | CN113496921A (ja) |
TW (1) | TWI779541B (ja) |
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JP7386120B2 (ja) * | 2020-04-02 | 2023-11-24 | 株式会社Screenホールディングス | 基板処理装置 |
KR20220037632A (ko) * | 2020-09-18 | 2022-03-25 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008073611A (ja) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | 高圧処理装置 |
US20180358242A1 (en) | 2017-06-08 | 2018-12-13 | Samsung Electronics Co., Ltd. | Substrate Processing Apparatus and Apparatus for Manufacturing Integrated Circuit Device |
JP2018207076A (ja) | 2017-06-09 | 2018-12-27 | 東京エレクトロン株式会社 | 基板処理装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08189768A (ja) * | 1994-11-07 | 1996-07-23 | Ryoden Semiconductor Syst Eng Kk | 蒸気乾燥装置、それを組込んだ洗浄装置および蒸気乾燥方法 |
JP3135209B2 (ja) | 1996-02-22 | 2001-02-13 | シャープ株式会社 | 半導体ウェハの洗浄装置 |
US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
DE10131905B4 (de) * | 2001-07-04 | 2005-05-19 | Wampfler Aktiengesellschaft | Vorrichtung zur induktiven Übertragung elektrischer Energie |
CA2498362C (en) * | 2002-09-11 | 2012-11-06 | Temple University - Of The Commonwealth System Of Higher Education | Automated system for high-throughput electrophoretic separations |
US7392815B2 (en) * | 2003-03-31 | 2008-07-01 | Lam Research Corporation | Chamber for wafer cleaning and method for making the same |
JP3940095B2 (ja) | 2003-05-08 | 2007-07-04 | 忠弘 大見 | 基板処理装置 |
JP4499604B2 (ja) * | 2005-04-22 | 2010-07-07 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | 超臨界処理方法 |
JP2007149866A (ja) * | 2005-11-25 | 2007-06-14 | Elpida Memory Inc | 半導体シリコン基板の製造方法およびその製造装置 |
JP5708506B2 (ja) | 2011-04-20 | 2015-04-30 | 東京エレクトロン株式会社 | 処理装置 |
KR101874901B1 (ko) * | 2011-12-07 | 2018-07-06 | 삼성전자주식회사 | 기판 건조 장치 및 방법 |
KR101501362B1 (ko) * | 2012-08-09 | 2015-03-10 | 가부시키가이샤 스크린 홀딩스 | 기판처리장치 및 기판처리방법 |
JP6131162B2 (ja) * | 2012-11-08 | 2017-05-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP5941491B2 (ja) | 2014-03-26 | 2016-06-29 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びにプログラム |
JP6279954B2 (ja) * | 2014-03-28 | 2018-02-14 | 株式会社Screenホールディングス | 基板処理装置 |
JP2016025233A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社東芝 | 基板処理装置、及び基板処理方法 |
US10119191B2 (en) * | 2016-06-08 | 2018-11-06 | Applied Materials, Inc. | High flow gas diffuser assemblies, systems, and methods |
JP2018082043A (ja) * | 2016-11-16 | 2018-05-24 | 東京エレクトロン株式会社 | 基板処理装置 |
KR102375985B1 (ko) | 2017-05-16 | 2022-03-21 | 주식회사 케이씨텍 | 기판 처리용 챔버 |
TWI756475B (zh) * | 2017-10-06 | 2022-03-01 | 日商東京威力科創股份有限公司 | 抑制粒子產生之方法及真空裝置 |
JP7386120B2 (ja) * | 2020-04-02 | 2023-11-24 | 株式会社Screenホールディングス | 基板処理装置 |
JP2021163916A (ja) * | 2020-04-02 | 2021-10-11 | 株式会社Screenホールディングス | 基板処理装置 |
-
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- 2020-04-02 JP JP2020066516A patent/JP7386120B2/ja active Active
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- 2021-03-31 TW TW110111705A patent/TWI779541B/zh active
- 2021-04-01 CN CN202110358019.3A patent/CN113496921A/zh active Pending
- 2021-04-01 KR KR1020210042604A patent/KR102439644B1/ko active IP Right Grant
- 2021-04-01 US US17/219,931 patent/US11955350B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008073611A (ja) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | 高圧処理装置 |
US20180358242A1 (en) | 2017-06-08 | 2018-12-13 | Samsung Electronics Co., Ltd. | Substrate Processing Apparatus and Apparatus for Manufacturing Integrated Circuit Device |
JP2018207103A (ja) | 2017-06-08 | 2018-12-27 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 基板処理装置及び集積回路素子製造装置 |
JP2018207076A (ja) | 2017-06-09 | 2018-12-27 | 東京エレクトロン株式会社 | 基板処理装置 |
Also Published As
Publication number | Publication date |
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KR102439644B1 (ko) | 2022-09-02 |
CN113496921A (zh) | 2021-10-12 |
US11955350B2 (en) | 2024-04-09 |
US20210313198A1 (en) | 2021-10-07 |
JP2021163915A (ja) | 2021-10-11 |
TW202141613A (zh) | 2021-11-01 |
TWI779541B (zh) | 2022-10-01 |
KR20210123229A (ko) | 2021-10-13 |
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