JP7357693B2 - 基板処理方法 - Google Patents

基板処理方法 Download PDF

Info

Publication number: JP7357693B2
Authority: JP; Japan
Prior art keywords: substrate; etching; wafer; liquid; region
Prior art date: 2019-12-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2021565452A

Other languages

English (en)

Japanese (ja)

Other versions

JPWO2021124900A1 (ko

Inventor

康三立花

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Electron Ltd

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-12-16

Filing date

2020-12-03

Publication date

2023-10-06

2020-12-03 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2021-06-24 Publication of JPWO2021124900A1 publication Critical patent/JPWO2021124900A1/ja

2023-10-06 Application granted granted Critical

2023-10-06 Publication of JP7357693B2 publication Critical patent/JP7357693B2/ja

Status Active legal-status Critical Current

2040-12-03 Anticipated expiration legal-status Critical

Links

239000000758 substrate Substances 0.000 title claims description 105
238000003672 processing method Methods 0.000 title claims description 13
238000005530 etching Methods 0.000 claims description 161
239000012530 fluid Substances 0.000 claims description 132
239000007788 liquid Substances 0.000 claims description 113
230000001105 regulatory effect Effects 0.000 claims description 13
239000003595 mist Substances 0.000 claims description 9
230000002093 peripheral effect Effects 0.000 claims description 8
230000007423 decrease Effects 0.000 claims description 6
238000013459 approach Methods 0.000 claims description 5
230000001681 protective effect Effects 0.000 claims description 4
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
235000012431 wafers Nutrition 0.000 description 150
238000012545 processing Methods 0.000 description 77
238000000034 method Methods 0.000 description 35
230000008569 process Effects 0.000 description 30
239000010408 film Substances 0.000 description 28
238000009826 distribution Methods 0.000 description 27
239000007789 gas Substances 0.000 description 27
238000012546 transfer Methods 0.000 description 15
230000007246 mechanism Effects 0.000 description 13
230000000052 comparative effect Effects 0.000 description 10
238000007599 discharging Methods 0.000 description 10
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
238000001035 drying Methods 0.000 description 8
238000003860 storage Methods 0.000 description 7
239000004065 semiconductor Substances 0.000 description 6
239000000126 substance Substances 0.000 description 6
238000010586 diagram Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000009471 action Effects 0.000 description 4
210000000078 claw Anatomy 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
238000011282 treatment Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
238000001816 cooling Methods 0.000 description 2
229910001873 dinitrogen Inorganic materials 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000002245 particle Substances 0.000 description 2
238000011084 recovery Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000008901 benefit Effects 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
230000003749 cleanliness Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000001771 impaired effect Effects 0.000 description 1
239000003112 inhibitor Substances 0.000 description 1
238000011017 operating method Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000003960 organic solvent Substances 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
239000007921 spray Substances 0.000 description 1
230000007480 spreading Effects 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000002123 temporal effect Effects 0.000 description 1
238000012360 testing method Methods 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Weting (AREA)
Cleaning Or Drying Semiconductors (AREA)

JP2021565452A 2019-12-16 2020-12-03 基板処理方法 Active JP7357693B2 (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2019226490		2019-12-16
JP2019226490		2019-12-16
PCT/JP2020/044980 WO2021124900A1 (ja)	2019-12-16	2020-12-03	基板処理方法

Publications (2)

Publication Number	Publication Date
JPWO2021124900A1 JPWO2021124900A1 (ko)	2021-06-24
JP7357693B2 true JP7357693B2 (ja)	2023-10-06

Family

ID=76478735

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2021565452A Active JP7357693B2 (ja)	2019-12-16	2020-12-03	基板処理方法

Country Status (5)

Country	Link
US (1)	US20230023792A1 (ko)
JP (1)	JP7357693B2 (ko)
KR (1)	KR20220115980A (ko)
CN (1)	CN114787971A (ko)
WO (1)	WO2021124900A1 (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2007266302A (ja)	2006-03-28	2007-10-11	Tokyo Electron Ltd	液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2013029402A (ja)	2011-07-28	2013-02-07	Toshiba Corp	レーダ装置及び受信データ処理方法
JP2014038978A (ja)	2012-08-20	2014-02-27	Dainippon Screen Mfg Co Ltd	基板処理装置、および基板処理方法
JP2015167161A (ja)	2014-03-03	2015-09-24	東京エレクトロン株式会社	液処理装置、液処理方法及び記憶媒体
US20160314994A1 (en)	2015-04-27	2016-10-27	Taiwan Semiconductor Manufacturing Co., Ltd.	Method for etching etch layer and wafer etching apparatus
WO2018079494A1 (ja)	2016-10-26	2018-05-03	東京エレクトロン株式会社	液処理方法及び液処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6632292B1 (en) *	1998-03-13	2003-10-14	Semitool, Inc.	Selective treatment of microelectronic workpiece surfaces
US8657963B2 (en) *	2011-09-22	2014-02-25	Taiwan Semiconductor Manufacturing Company, Ltd.	In-situ backside cleaning of semiconductor substrate
JP5832329B2 (ja) *	2012-02-21	2015-12-16	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法
JP6914138B2 (ja) *	2017-07-26	2021-08-04	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法及び基板処理装置

2020
- 2020-12-03 WO PCT/JP2020/044980 patent/WO2021124900A1/ja active Application Filing
- 2020-12-03 US US17/757,026 patent/US20230023792A1/en active Pending
- 2020-12-03 KR KR1020227023007A patent/KR20220115980A/ko unknown
- 2020-12-03 JP JP2021565452A patent/JP7357693B2/ja active Active
- 2020-12-03 CN CN202080085410.4A patent/CN114787971A/zh active Pending

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2007266302A (ja)	2006-03-28	2007-10-11	Tokyo Electron Ltd	液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2013029402A (ja)	2011-07-28	2013-02-07	Toshiba Corp	レーダ装置及び受信データ処理方法
JP2014038978A (ja)	2012-08-20	2014-02-27	Dainippon Screen Mfg Co Ltd	基板処理装置、および基板処理方法
JP2015167161A (ja)	2014-03-03	2015-09-24	東京エレクトロン株式会社	液処理装置、液処理方法及び記憶媒体
US20160314994A1 (en)	2015-04-27	2016-10-27	Taiwan Semiconductor Manufacturing Co., Ltd.	Method for etching etch layer and wafer etching apparatus
WO2018079494A1 (ja)	2016-10-26	2018-05-03	東京エレクトロン株式会社	液処理方法及び液処理装置

Also Published As

Publication number	Publication date
CN114787971A (zh)	2022-07-22
KR20220115980A (ko)	2022-08-19
US20230023792A1 (en)	2023-01-26
JPWO2021124900A1 (ko)	2021-06-24
WO2021124900A1 (ja)	2021-06-24

Legal Events

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2022-06-08	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220608
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2023-06-28	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230628
2023-08-25	TRDD	Decision of grant or rejection written
2023-08-29	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230829
2023-09-28	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230926
2023-09-28	R150	Certificate of patent or registration of utility model	Ref document number: 7357693 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150

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