JP7357693B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
- Publication number
- JP7357693B2 JP7357693B2 JP2021565452A JP2021565452A JP7357693B2 JP 7357693 B2 JP7357693 B2 JP 7357693B2 JP 2021565452 A JP2021565452 A JP 2021565452A JP 2021565452 A JP2021565452 A JP 2021565452A JP 7357693 B2 JP7357693 B2 JP 7357693B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etching
- wafer
- liquid
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims description 105
- 238000003672 processing method Methods 0.000 title claims description 13
- 238000005530 etching Methods 0.000 claims description 161
- 239000012530 fluid Substances 0.000 claims description 132
- 239000007788 liquid Substances 0.000 claims description 113
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 239000003595 mist Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 150
- 238000012545 processing Methods 0.000 description 77
- 238000000034 method Methods 0.000 description 35
- 230000008569 process Effects 0.000 description 30
- 239000010408 film Substances 0.000 description 28
- 238000009826 distribution Methods 0.000 description 27
- 239000007789 gas Substances 0.000 description 27
- 238000012546 transfer Methods 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007599 discharging Methods 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019226490 | 2019-12-16 | ||
JP2019226490 | 2019-12-16 | ||
PCT/JP2020/044980 WO2021124900A1 (ja) | 2019-12-16 | 2020-12-03 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021124900A1 JPWO2021124900A1 (ko) | 2021-06-24 |
JP7357693B2 true JP7357693B2 (ja) | 2023-10-06 |
Family
ID=76478735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021565452A Active JP7357693B2 (ja) | 2019-12-16 | 2020-12-03 | 基板処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230023792A1 (ko) |
JP (1) | JP7357693B2 (ko) |
KR (1) | KR20220115980A (ko) |
CN (1) | CN114787971A (ko) |
WO (1) | WO2021124900A1 (ko) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007266302A (ja) | 2006-03-28 | 2007-10-11 | Tokyo Electron Ltd | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2013029402A (ja) | 2011-07-28 | 2013-02-07 | Toshiba Corp | レーダ装置及び受信データ処理方法 |
JP2014038978A (ja) | 2012-08-20 | 2014-02-27 | Dainippon Screen Mfg Co Ltd | 基板処理装置、および基板処理方法 |
JP2015167161A (ja) | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US20160314994A1 (en) | 2015-04-27 | 2016-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching etch layer and wafer etching apparatus |
WO2018079494A1 (ja) | 2016-10-26 | 2018-05-03 | 東京エレクトロン株式会社 | 液処理方法及び液処理装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6632292B1 (en) * | 1998-03-13 | 2003-10-14 | Semitool, Inc. | Selective treatment of microelectronic workpiece surfaces |
US8657963B2 (en) * | 2011-09-22 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ backside cleaning of semiconductor substrate |
JP5832329B2 (ja) * | 2012-02-21 | 2015-12-16 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6914138B2 (ja) * | 2017-07-26 | 2021-08-04 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
-
2020
- 2020-12-03 WO PCT/JP2020/044980 patent/WO2021124900A1/ja active Application Filing
- 2020-12-03 US US17/757,026 patent/US20230023792A1/en active Pending
- 2020-12-03 KR KR1020227023007A patent/KR20220115980A/ko unknown
- 2020-12-03 JP JP2021565452A patent/JP7357693B2/ja active Active
- 2020-12-03 CN CN202080085410.4A patent/CN114787971A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007266302A (ja) | 2006-03-28 | 2007-10-11 | Tokyo Electron Ltd | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2013029402A (ja) | 2011-07-28 | 2013-02-07 | Toshiba Corp | レーダ装置及び受信データ処理方法 |
JP2014038978A (ja) | 2012-08-20 | 2014-02-27 | Dainippon Screen Mfg Co Ltd | 基板処理装置、および基板処理方法 |
JP2015167161A (ja) | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US20160314994A1 (en) | 2015-04-27 | 2016-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching etch layer and wafer etching apparatus |
WO2018079494A1 (ja) | 2016-10-26 | 2018-05-03 | 東京エレクトロン株式会社 | 液処理方法及び液処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN114787971A (zh) | 2022-07-22 |
KR20220115980A (ko) | 2022-08-19 |
US20230023792A1 (en) | 2023-01-26 |
JPWO2021124900A1 (ko) | 2021-06-24 |
WO2021124900A1 (ja) | 2021-06-24 |
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