JP7316968B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title description 10
- 239000011347 resin Substances 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 34
- 230000017525 heat dissipation Effects 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Description
実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置100の内部構成図である。図2は、半導体装置100の上下を逆にした状態を示す側面図である。図3は、半導体装置100の回路図である。
次に、実施の形態2に係る半導体装置100について説明する。図7は、実施の形態2に係る半導体装置100が備えるパワー側端子6およびその周辺の拡大正面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置100について説明する。図8は、実施の形態3に係る半導体装置100が備えるパワー側端子6およびその周辺の拡大正面図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (5)
- パワーチップと、
前記パワーチップを制御する制御チップと、
前記パワーチップに接続されたパワー側端子と、
前記制御チップに接続された制御側端子と、
前記パワーチップ、前記制御チップ、前記パワー側端子の一端側、および前記制御側端子の一端側を覆うモールド樹脂と、を備え、
前記パワー側端子の他端側および前記制御側端子の他端側は、前記モールド樹脂の側面から水平方向に突出するとともに途中部において下方に屈曲し、
前記パワー側端子および前記制御側端子のうち前記パワー側端子の他端側にのみ、下方に屈曲した部分から前記モールド樹脂に対して近づく方向または離れる方向に突出する放熱部が形成され、
前記放熱部に貫通孔が形成された、半導体装置。 - パワーチップと、
前記パワーチップを制御する制御チップと、
前記パワーチップに接続されたパワー側端子と、
前記制御チップに接続された制御側端子と、
前記パワーチップ、前記制御チップ、前記パワー側端子の一端側、および前記制御側端子の一端側を覆うモールド樹脂と、を備え、
前記パワー側端子の他端側および前記制御側端子の他端側は、前記モールド樹脂の側面から水平方向に突出するとともに途中部において下方に屈曲し、
前記パワー側端子および前記制御側端子のうち前記パワー側端子の他端側にのみ、下方に屈曲した部分から前記モールド樹脂に対して近づく方向または離れる方向に突出する放熱部が形成され、
前記放熱部は前記パワー側端子の他端側の先端部に形成され、
前記放熱部の先端部はテーパー状である、半導体装置。 - 前記パワー側端子は、正極端子および負極端子を含み、
前記放熱部は、前記正極端子の他端側または前記負極端子の他端側に形成された、請求項1又は請求項2に記載の半導体装置。 - 請求項1に記載の半導体装置を製造する半導体装置の製造方法であって、
前記パワー側端子の他端側は、前記パワー側端子の幅方向両端から幅方向に突出する突出部を有し、
(a)前記モールド樹脂の形成後、前記パワー側端子の前記突出部を折り曲げることで前記放熱部を形成する工程と、
(b)前記パワー側端子の他端側の途中部を折り曲げる工程と、
(c)前記放熱部の厚み方向に貫通するように、前記放熱部に貫通孔を形成する工程と、
を備えた、半導体装置の製造方法。 - 請求項2に記載の半導体装置を製造する半導体装置の製造方法であって、
前記パワー側端子の他端側は、前記パワー側端子の幅方向両端から幅方向に突出する突出部を有し、
(a)前記モールド樹脂の形成後、前記パワー側端子の前記突出部を折り曲げることで前記放熱部を形成する工程と、
(b)前記パワー側端子の他端側の途中部を折り曲げる工程と、
(c)前記放熱部の先端部をテーパー状に形成する工程と、
を備えた、半導体装置の製造方法。
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JP2020057299A JP7316968B2 (ja) | 2020-03-27 | 2020-03-27 | 半導体装置および半導体装置の製造方法 |
US17/115,322 US11462451B2 (en) | 2020-03-27 | 2020-12-08 | Semiconductor device having terminals including heat dissipation portions, and method of manufacturing thereof |
DE102021102445.5A DE102021102445A1 (de) | 2020-03-27 | 2021-02-03 | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
CN202110301774.8A CN113451243A (zh) | 2020-03-27 | 2021-03-22 | 半导体装置及半导体装置的制造方法 |
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JP2006080180A (ja) | 2004-09-08 | 2006-03-23 | Seiko Epson Corp | 電子部品、圧電発振器および電子機器 |
JP2008112932A (ja) | 2006-10-31 | 2008-05-15 | Nippon Steel Corp | 半導体素子の接続リード |
JP2016111088A (ja) | 2014-12-03 | 2016-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JPH073848B2 (ja) * | 1984-09-28 | 1995-01-18 | 株式会社日立製作所 | 半導体装置 |
JPH01183840A (ja) * | 1988-01-19 | 1989-07-21 | Hitachi Ltd | 半導体装置 |
US5157480A (en) * | 1991-02-06 | 1992-10-20 | Motorola, Inc. | Semiconductor device having dual electrical contact sites |
JP5145596B2 (ja) | 2008-04-15 | 2013-02-20 | 三菱電機株式会社 | 半導体装置 |
JP6633859B2 (ja) * | 2015-07-31 | 2020-01-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP2006080180A (ja) | 2004-09-08 | 2006-03-23 | Seiko Epson Corp | 電子部品、圧電発振器および電子機器 |
JP2008112932A (ja) | 2006-10-31 | 2008-05-15 | Nippon Steel Corp | 半導体素子の接続リード |
JP2016111088A (ja) | 2014-12-03 | 2016-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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