JP7302094B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP7302094B2 JP7302094B2 JP2022506208A JP2022506208A JP7302094B2 JP 7302094 B2 JP7302094 B2 JP 7302094B2 JP 2022506208 A JP2022506208 A JP 2022506208A JP 2022506208 A JP2022506208 A JP 2022506208A JP 7302094 B2 JP7302094 B2 JP 7302094B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- rectangular waveguide
- plasma processing
- processing apparatus
- rectangular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims description 75
- 230000000903 blocking effect Effects 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 238000005192 partition Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 210000001624 hip Anatomy 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
ここで、fcはマイクロ波周波数2.45GHz、Cは真空中光速度2.99×108m/sである。
ここで、kcは遮断波数[rad/m]、aは内側導波管29aの半径[m]、bは外側導波管29bの半径[m]である。
前記矩形導波管(33,34)は、上下に仕切られて形成された上部矩形導波管(42)および下部矩形導波管(43)と、前記高周波電源から供給されたマイクロ波の高周波電力を遮断し誘電体(31)が配置された遮断部(30)とを具備する。
前記円形導波管(29a、29b)は、前記上部矩形導波管(42)に接続され内部に形成された内側導波管(29a)と、前記下部矩形導波管(43)に接続され前記内側導波管の外側に形成された外側導波管(29b)とを具備する。
前記遮断部(30)の幅は、前記遮断部(30)以外の前記矩形導波管(33)の幅より狭い。
21:マイクロ波電力分割器
22:電磁コイル
23:処理室
25:石英窓
26:下部電極
27:RF電源
101:マグネトロン(マイクロ波源、高周波電源)
217:内側放射部
218:リング状外側放射部
29a:円形内側導波管
29b:円形外側導波管
30:くびれ部
31:石英ゲート(電力ゲート)
33:矩形導波管a
34:矩形導波管b
36:誘電体導波路
42:上部矩形導波管
43:下部矩形導波管
47:隙間
49:仕切板
57:台形部
58:挿入部
627:アクチュエータ(移動機構)
700:挿入長
Claims (7)
- 試料がプラズマ処理される処理室と、プラズマを生成するためのマイクロ波の高周波電力を供給する高周波電源と、前記マイクロ波を伝送する矩形導波管と、前記矩形導波管に接続され前記処理室へマイクロ波を伝送する円形導波管と、前記試料が載置される試料台とを備えるプラズマ処理装置において、
前記矩形導波管は、前記円形導波管が延びる方向を上下方向とした場合、上下に仕切られて形成された上部矩形導波管および下部矩形導波管と、前記高周波電源から供給されたマイクロ波の高周波電力を遮断し誘電体が配置された遮断部とを具備し、
前記円形導波管は、前記上部矩形導波管に接続され内部に形成された内側導波管と、前記下部矩形導波管に接続され前記内側導波管の外側に形成された外側導波管とを具備し、
前記遮断部は、前記円形導波管との接続部と前記高周波電源の間に配置され、
前記矩形導波管の延びる方向に対して垂直方向の前記遮断部の寸法は、前記遮断部以外の前記矩形導波管における前記垂直方向の寸法より狭いことを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記矩形導波管は、第1の矩形導波管と、前記上下方向に対して垂直な面にて前記第1の矩形導波管と直交する第2の矩形導波管と、を具備し、
前記第1の矩形導波管は、マグネトロンからマイクロ波が伝送されるとともに前記遮断部を具備することを特徴とするプラズマ処理装置。 - 請求項2に記載のプラズマ処理装置において、
前記内側導波管は、誘電体導波路を有することを特徴とするプラズマ処理装置。 - 請求項3に記載のプラズマ処理装置において、
平面図における前記誘電体導波路の中心軸は、前記平面図における前記第1の矩形導波管の中心軸および前記第2の矩形導波管の中心軸と一致しないことを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記誘電体は、前記上部矩形導波管に配置されていることを特徴とするプラズマ処理装置。 - 請求項3に記載のプラズマ処理装置において、
前記誘電体は、前記上部矩形導波管に配置されていることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記上下方向に対して垂直な方向へ前記誘電体を移動させる移動機構をさらに備えることを特徴とするプラズマ処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/002037 WO2022157883A1 (ja) | 2021-01-21 | 2021-01-21 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022157883A1 JPWO2022157883A1 (ja) | 2022-07-28 |
JP7302094B2 true JP7302094B2 (ja) | 2023-07-03 |
Family
ID=82548603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022506208A Active JP7302094B2 (ja) | 2021-01-21 | 2021-01-21 | プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11948776B2 (ja) |
JP (1) | JP7302094B2 (ja) |
KR (1) | KR20220107148A (ja) |
CN (1) | CN115119543A (ja) |
TW (1) | TWI808609B (ja) |
WO (1) | WO2022157883A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005050776A (ja) | 2003-07-31 | 2005-02-24 | Tokyo Electron Ltd | 電磁界供給装置およびプラズマ装置 |
JP2012178380A (ja) | 2011-02-25 | 2012-09-13 | Hitachi High-Technologies Corp | プラズマ処理装置 |
WO2016104205A1 (ja) | 2014-12-26 | 2016-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2019110028A (ja) | 2017-12-18 | 2019-07-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01134926A (ja) * | 1987-11-20 | 1989-05-26 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ生成源およびそれを用いたプラズマ処理装置 |
US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
JP3310957B2 (ja) * | 1999-08-31 | 2002-08-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4593741B2 (ja) * | 2000-08-02 | 2010-12-08 | 東京エレクトロン株式会社 | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
US20120186747A1 (en) | 2011-01-26 | 2012-07-26 | Obama Shinji | Plasma processing apparatus |
JP2015109249A (ja) * | 2013-10-22 | 2015-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6442242B2 (ja) * | 2014-11-17 | 2018-12-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6552429B2 (ja) * | 2016-02-05 | 2019-07-31 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6695705B2 (ja) * | 2016-02-17 | 2020-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20220359162A1 (en) * | 2020-01-27 | 2022-11-10 | Hitachi High-Tech Corporation | Plasma processing apparatus |
US12002655B2 (en) * | 2020-04-30 | 2024-06-04 | Hitachi High-Tech Corporation | Plasma processing apparatus |
-
2021
- 2021-01-21 CN CN202180004749.1A patent/CN115119543A/zh active Pending
- 2021-01-21 KR KR1020227003176A patent/KR20220107148A/ko not_active Application Discontinuation
- 2021-01-21 JP JP2022506208A patent/JP7302094B2/ja active Active
- 2021-01-21 WO PCT/JP2021/002037 patent/WO2022157883A1/ja active Application Filing
- 2021-01-21 US US17/641,503 patent/US11948776B2/en active Active
-
2022
- 2022-01-12 TW TW111101288A patent/TWI808609B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005050776A (ja) | 2003-07-31 | 2005-02-24 | Tokyo Electron Ltd | 電磁界供給装置およびプラズマ装置 |
JP2012178380A (ja) | 2011-02-25 | 2012-09-13 | Hitachi High-Technologies Corp | プラズマ処理装置 |
WO2016104205A1 (ja) | 2014-12-26 | 2016-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2019110028A (ja) | 2017-12-18 | 2019-07-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202231134A (zh) | 2022-08-01 |
CN115119543A (zh) | 2022-09-27 |
JPWO2022157883A1 (ja) | 2022-07-28 |
WO2022157883A1 (ja) | 2022-07-28 |
KR20220107148A (ko) | 2022-08-02 |
US20230352273A1 (en) | 2023-11-02 |
TWI808609B (zh) | 2023-07-11 |
US11948776B2 (en) | 2024-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100472582B1 (ko) | 플라즈마처리장치 | |
US8945342B2 (en) | Surface wave plasma generating antenna and surface wave plasma processing apparatus | |
US9548187B2 (en) | Microwave radiation antenna, microwave plasma source and plasma processing apparatus | |
KR19980024951A (ko) | 마이크로파 플라즈마 처리 장치 | |
US20110150719A1 (en) | Microwave introduction mechanism, microwave plasma source and microwave plasma processing apparatus | |
KR20140117630A (ko) | 마이크로파 방사 기구, 마이크로파 플라즈마원 및 표면파 플라즈마 처리 장치 | |
US5173641A (en) | Plasma generating apparatus | |
WO2021220459A1 (ja) | プラズマ処理装置 | |
JPH0499876A (ja) | プラズマの制御方法ならびにプラズマ処理方法およびその装置 | |
KR102164479B1 (ko) | 2개의 독립적인 마이크로파 제너레이터를 이용한 선형 ecr 플라즈마 발생 장치 | |
JP7139528B2 (ja) | プラズマ処理装置 | |
JPH0319332A (ja) | マイクロ波プラズマ処理装置 | |
JPH09289099A (ja) | プラズマ処理方法および装置 | |
JP7302094B2 (ja) | プラズマ処理装置 | |
KR102521817B1 (ko) | 플라스마 처리 장치 | |
KR100785960B1 (ko) | 플라즈마 처리 장치 | |
JPH09293599A (ja) | プラズマ処理方法および装置 | |
JP6700128B2 (ja) | マイクロ波プラズマ処理装置 | |
JP2024017093A (ja) | プラズマ処理装置 | |
JP2018006256A (ja) | マイクロ波プラズマ処理装置 | |
JPH04141594A (ja) | プラズマ処理装置及び該装置を用いたプラズマ処理方法 | |
JPH10107011A (ja) | プラズマ処理装置 | |
JP3866590B2 (ja) | プラズマ発生装置 | |
JPH04120276A (ja) | 表面処理装置 | |
JPH04132199A (ja) | マイクロ波プラズマ発生装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221115 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230313 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230523 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230621 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7302094 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |