JP7297905B2 - 基板液処理方法、基板液処理装置、及びコンピュータ読み取り可能な記録媒体 - Google Patents
基板液処理方法、基板液処理装置、及びコンピュータ読み取り可能な記録媒体 Download PDFInfo
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- JP7297905B2 JP7297905B2 JP2021542742A JP2021542742A JP7297905B2 JP 7297905 B2 JP7297905 B2 JP 7297905B2 JP 2021542742 A JP2021542742 A JP 2021542742A JP 2021542742 A JP2021542742 A JP 2021542742A JP 7297905 B2 JP7297905 B2 JP 7297905B2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- Metallurgy (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
次に、上述のめっき処理部5によって行われる無電解めっき処理の流れを例示する。
図3は、第1実施形態に係る無電解めっき処理の一例を示すフローチャートである。図4は、第1実施形態に係る無電解めっき処理における時間とめっき液L1の温度との関係の一例を示すグラフである。図5A~図5Cは、第1実施形態に係る無電解めっき処理における基板Wの凹部11の断面状態を例示する図である。
本実施形態において、上述の第1実施形態と同一又は類似の要素には同一の符号を付し、その詳細な説明は省略する。
本実施形態において、上述の第1実施形態と同一又は類似の要素には同一の符号を付し、その詳細な説明は省略する。
本実施形態において、上述の第2実施形態及び第3実施形態と同一又は類似の要素には同一の符号を付し、その詳細な説明は省略する。
めっき液L1の温度を下げる場合、積極的な冷却と自然冷却とが組み合わされてもよい。例えば、第2実施形態(図7参照)において、基板W上に新たなめっき液L1を供給して液膜14の温度を第2めっき温度に下げた後、自然冷却させてもよい。また第4実施形態(図12参照)において、基板W上に新たなめっき液L1を供給して液膜14の温度を「第1の温度と室温との間の温度」に下げた後に、液膜14を室温まで自然冷却させてもよい。自然冷却を行う場合、ヒータ63からの熱によって基板W上の液膜14の温度が上昇しないような位置に蓋体6は配置されることが好ましい。例えば蓋体6を上方位置(図2において二点鎖線で示される位置)に配置することによって、基板W上の液膜14を室温まで自然冷却することができる。
12 シード層
13 めっき銅
14 液膜
L1 めっき液
Sw 処理面
W 基板
Claims (10)
- シード層が積層されている凹部を含む表面を持つ基板を準備する工程と、
前記基板の前記表面に無電解めっき液を供給して、前記凹部を前記無電解めっき液で満たしつつ前記表面上に前記無電解めっき液の液膜を形成する工程と、
前記シード層上において金属を析出させる第1の温度から、前記第1の温度よりも低い第2の温度に前記液膜の温度を調整し、前記凹部が、ボイドを生じさせないように、前記金属によって底部側から埋められる工程と、を含み、
前記液膜は、ヒータを有するカバー部材が前記基板の前記表面の上方に配置されることによって加熱され、
前記液膜の温度は、前記基板の前記表面と前記ヒータとの間の距離が変えられることによって調整される、基板液処理方法。 - 前記第2の温度は室温である請求項1に記載の基板液処理方法。
- 析出した前記金属によって前記凹部の開口部が塞がれる前に、前記液膜が前記第2の温度に調整される請求項1又は2に記載の基板液処理方法。
- 前記液膜を前記第2の温度に調整した後、前記第2の温度よりも高く且つ前記金属を析出させる第3の温度に前記液膜を加熱する工程を含む請求項1~3のいずれか一項に記載の基板液処理方法。
- 前記金属の析出を促すように前記液膜の温度を上げる工程と、前記液膜の温度を下げる工程とが、交互に繰り返し行われる請求項1~4のいずれか一項に記載の基板液処理方法。
- 前記第2の温度を有する前記液膜は、少なくとも前記凹部の開口部において、前記金属を溶解して低減させる請求項4又は5に記載の基板液処理方法。
- 前記液膜の温度を前記第2の温度に調整する際、前記基板の前記表面と前記カバー部材との間にガスが供給される請求項1~6のいずれか一項に記載の基板液処理方法。
- 前記液膜の温度を前記第2の温度に調整する際、前記第1の温度よりも低い温度を有する前記無電解めっき液が前記基板の前記表面に供給される請求項1~7のいずれか一項に記載の基板液処理方法。
- 基板の表面であってシード層が積層されている凹部を含む表面に無電解めっき液を供給して、前記凹部を前記無電解めっき液で満たしつつ前記表面上に前記無電解めっき液の液膜を形成するめっき液供給部と、
前記液膜の温度を調整する温度調整部と、
前記温度調整部を制御する制御部と、を備え、
前記制御部は、前記シード層上において金属を析出させる第1の温度から、前記第1の温度よりも低い第2の温度に前記液膜の温度を調整し、前記凹部が、ボイドを生じさせないように、前記金属によって底部側から埋められるように前記温度調整部を制御し、
前記温度調整部は、ヒータを有するカバー部材を有し、
前記液膜は、前記カバー部材が前記基板の前記表面の上方に配置されることによって加熱され、
前記制御部は、前記液膜の温度が、前記基板の前記表面と前記ヒータとの間の距離が変えられることによって調整されるように前記温度調整部を制御する、基板液処理装置。 - コンピュータに、
シード層が積層されている凹部を含む表面を持つ基板を準備する手順と、
前記基板の前記表面に無電解めっき液を供給して、前記凹部を前記無電解めっき液で満たしつつ前記表面上に前記無電解めっき液の液膜を形成する手順と、
前記シード層上において金属を析出させる第1の温度から、前記第1の温度よりも低い第2の温度に前記液膜の温度を調整し、前記凹部が、ボイドを生じさせないように、前記金属によって底部側から埋められる手順と、を実行させるためのプログラムを記録したコンピュータ読み取り可能な記録媒体であって、
前記液膜は、ヒータを有するカバー部材が前記基板の前記表面の上方に配置されることによって加熱され、
前記液膜の温度は、前記基板の前記表面と前記ヒータとの間の距離が変えられることによって調整される、コンピュータ読み取り可能な記録媒体。
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