WO2022168614A1 - めっき処理方法およびめっき処理装置 - Google Patents
めっき処理方法およびめっき処理装置 Download PDFInfo
- Publication number
- WO2022168614A1 WO2022168614A1 PCT/JP2022/001927 JP2022001927W WO2022168614A1 WO 2022168614 A1 WO2022168614 A1 WO 2022168614A1 JP 2022001927 W JP2022001927 W JP 2022001927W WO 2022168614 A1 WO2022168614 A1 WO 2022168614A1
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- WO
- WIPO (PCT)
- Prior art keywords
- plating
- substrate
- plating solution
- seed layer
- reducing agent
- Prior art date
Links
- 238000007747 plating Methods 0.000 title claims abstract description 393
- 238000000034 method Methods 0.000 title claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 223
- 239000010949 copper Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims abstract description 54
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 230000009467 reduction Effects 0.000 claims abstract description 39
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 28
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 23
- 239000010941 cobalt Substances 0.000 claims abstract description 23
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 21
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
Definitions
- the present disclosure relates to a plating method and a plating apparatus.
- the present disclosure provides a technology capable of satisfactorily filling the inside of vias with copper wiring.
- a plating method includes a preparation process, a first plating process, and a second plating process.
- the preparing step prepares a substrate having a cobalt or cobalt alloy seed layer formed in the recess.
- displacement plating is performed on the substrate using a first plating solution containing copper ions to replace the surface layer of the seed layer with copper.
- reduction plating is applied to the concave portion using a second plating solution containing copper ions and a reducing agent on the substrate.
- the inside of the via can be satisfactorily filled with copper wiring.
- FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment.
- FIG. 2 is a diagram showing the configuration of the plating processing section according to the embodiment.
- FIG. 3 is an enlarged cross-sectional view showing the state of the substrate surface before the first plating process according to the embodiment.
- FIG. 4 is a diagram for explaining the first plating process according to the embodiment.
- FIG. 5 is an enlarged cross-sectional view showing the state of the substrate surface after the first plating process according to the embodiment.
- FIG. 6 is a diagram for explaining the second plating process according to the embodiment.
- FIG. 7 is an enlarged cross-sectional view showing the state of the substrate surface after the second plating process according to the embodiment.
- FIG. 8 is a diagram for explaining the first plating process according to the modification of the embodiment.
- FIG. 9 is a diagram for explaining the second plating process according to the modification of the embodiment.
- FIG. 10 is a diagram for explaining a second plating process according to another modification of the embodiment;
- FIG. 11 is a flowchart showing a processing procedure in plating processing according to the embodiment.
- the copper seed layer can only be deposited by the PVD (Physical Vapor Deposition) method, when the inner diameter of the via is reduced in line with the recent miniaturization of multilayer wiring, a homogeneous copper layer inside the via cannot be formed. A seed layer may not be formed.
- PVD Physical Vapor Deposition
- FIG. 1 is a diagram showing the configuration of a substrate processing apparatus 1 according to an embodiment.
- the substrate processing apparatus 1 is an example of a plating processing apparatus.
- the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.
- the substrate processing apparatus 1 includes a loading/unloading station 2 and a processing station 3 .
- the loading/unloading station 2 and the processing station 3 are provided adjacently.
- the loading/unloading station 2 includes a carrier table 11 and a transport section 12 .
- a plurality of carriers C for accommodating a plurality of substrates, in the embodiment, semiconductor wafers (hereinafter also referred to as substrates W) are placed on the carrier table 11 in a horizontal state.
- a plurality of load ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.
- the transport section 12 is provided adjacent to the carrier table 11 and includes a substrate transport device 13 and a transfer section 14 therein.
- the substrate transfer device 13 includes a wafer holding mechanism that holds the substrate W. As shown in FIG. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the substrates W between the carrier C and the transfer section 14 using a wafer holding mechanism. conduct.
- the processing station 3 is provided adjacent to the transport section 12 .
- the processing station 3 includes a transport section 15 and a plurality of plating processing sections 5 .
- a plurality of plating processing units 5 are arranged side by side on both sides of the transport unit 15 .
- the configuration of the plating processing section 5 will be described later.
- the transport unit 15 includes a substrate transport device 17 inside.
- the substrate transfer device 17 includes a wafer holding mechanism that holds the substrate W. As shown in FIG.
- the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the substrate W between the transfer section 14 and the plating processing section 5 using a wafer holding mechanism. conduct.
- the substrate processing apparatus 1 also includes a control device 9 .
- the control device 9 is, for example, a computer, and includes a control section 91 and a storage section 92 .
- the storage unit 92 stores programs for controlling various processes executed in the substrate processing apparatus 1 .
- the control unit 91 controls the operation of the substrate processing apparatus 1 by reading and executing programs stored in the storage unit 92 .
- the program may be recorded in a computer-readable storage medium and installed in the storage unit 92 of the control device 9 from the storage medium.
- Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.
- the substrate transfer device 13 of the loading/unloading station 2 takes out the substrate W from the carrier C placed on the carrier table 11, and transfers the taken out substrate W to the delivery section. 14.
- the substrate W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 , transferred to the plating processing section 5 , and processed by the plating processing section 5 .
- recesses such as trenches and vias 120 (see FIG. 3) are formed on the surface of the substrate W, and the plating processing unit 5 fills these recesses with metal by electroless plating.
- the substrate W processed by the plating processing unit 5 is carried out from the plating processing unit 5 by the substrate transport device 17 and placed on the delivery unit 14 . Then, the processed substrate W placed on the transfer section 14 is returned to the carrier C on the carrier table 11 by the substrate transfer device 13 .
- FIG. 2 is a diagram showing the configuration of the plating processing section 5 according to the embodiment.
- the plating processing section 5 is configured, for example, as a single wafer processing unit that processes the substrates W one by one.
- the plating processing section 5 is configured to perform liquid processing including electroless plating processing.
- the plating processing section 5 includes a chamber 51 , a substrate holding section 52 , a first plating solution supply section 53 and a second plating solution supply section 54 .
- the first plating solution supply part 53 and the second plating solution supply part 54 are examples of the chemical solution supply part.
- the substrate holding part 52 is arranged inside the chamber 51 and holds the substrate W horizontally.
- the first plating solution supply unit 53 supplies the first plating solution L1 to the surface (upper surface) of the substrate W held by the substrate holding unit 52 .
- the second plating solution supply unit 54 supplies the second plating solution L2 to the surface (upper surface) of the substrate W held by the substrate holding unit 52 .
- the substrate holding part 52 has a chuck member 521 that vacuum-sucks the lower surface (rear surface) of the substrate W.
- This chuck member 521 is of a so-called vacuum chuck type.
- a rotation motor 523 (rotation drive section) is connected to the substrate holding section 52 via a rotation shaft 522 .
- the substrate holder 52 rotates together with the substrate W when the rotary motor 523 is driven.
- a rotary motor 523 is supported by a base 524 fixed to the chamber 51 .
- a heating source such as a heater is not provided inside the substrate holding portion 52 .
- the first plating solution supply unit 53 includes a first plating solution nozzle 531 for discharging (supplying) the first plating solution L1 onto the substrate W held by the substrate holding unit 52, and a first plating solution nozzle 531 for supplying the first plating solution L1 to the substrate W held by the substrate holding unit 52. and a first plating solution supply source 532 that supplies the solution L1.
- the first plating solution supply source 532 is configured to supply the first plating solution L1 heated or temperature-controlled to a predetermined temperature to the first plating solution nozzle 531 through the first plating solution pipe 533. It is
- the temperature at which the first plating solution L1 is discharged from the first plating solution nozzle 531 is, for example, 40°C or higher and 70°C or lower, more preferably 60°C or higher and 70°C or lower.
- the first plating solution nozzle 531 is held by the nozzle arm 57 and configured to be movable.
- the first plating solution L1 is a plating solution for substitution type electroless plating (hereinafter also referred to as displacement plating).
- the first plating solution L1 contains, for example, copper (Cu) ions.
- the first plating solution L1 according to the embodiment contains a reducing agent at a ratio smaller than a given ratio, or does not contain a reducing agent.
- Examples of reducing agents that can be contained in the first plating solution L1 include hypophosphorous acid, dimethylamine borane, and glyoxylic acid.
- the second plating solution supply unit 54 includes a second plating solution nozzle 541 for discharging (supplying) the second plating solution L2 onto the substrate W held by the substrate holding unit 52, and a second plating solution nozzle 541 for the second plating solution. and a second plating solution supply source 542 that supplies the solution L2.
- the second plating solution supply source 542 is configured to supply the second plating solution L2 heated or temperature-controlled to a predetermined temperature to the second plating solution nozzle 541 through the second plating solution pipe 543. It is
- the temperature at which the second plating solution L2 is discharged from the second plating solution nozzle 541 is, for example, 40°C or higher and 70°C or lower, and more preferably 60°C or higher and 70°C or lower.
- the second plating solution nozzle 541 is held by the nozzle arm 57 and configured to be movable.
- the second plating solution L2 is a plating solution for reduction type electroless plating (hereinafter also referred to as reduction plating).
- the second plating solution L2 contains, for example, copper ions and a reducing agent in a proportion greater than that of the first plating solution L1.
- the reducing agent contained in the second plating solution L2 is, for example, hypophosphorous acid, dimethylamine borane, glyoxylic acid, or the like.
- the second plating solution L2 may contain a complexing agent, a pH adjuster, etc. in addition to the metal ions and the reducing agent.
- the complexing agent that can be contained in the second plating solution L2 may be any one capable of forming a complex with copper ions, and examples thereof include oxycarboxylic acid or its salt, aminocarboxylic acid or its salt, triethanolamine, and glycerin. be done.
- oxycarboxylic acids examples include lactic acid, malic acid, tartaric acid, citric acid, and gluconic acid.
- aminocarboxylic acids include nitrilotriacetic acid, ethylenediaminetetraacetic acid (EDTA), hydroxyethylethylenediaminetriacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraminehexaacetic acid, 1,3-propanediaminetetraacetic acid, and the like.
- pH adjusters examples include sodium oxide, tetramethylammonium hydroxide (TMAH), potassium hydroxide, and ammonia.
- the plating processing section 5 also includes a cleaning liquid supply section 55 that supplies the cleaning liquid L3 to the surface of the substrate W held by the substrate holding section 52, and a rinse liquid supply section 56 that supplies the rinse liquid L4 to the surface of the substrate W. , is further provided.
- the cleaning liquid supply unit 55 supplies the cleaning liquid L3 to the substrate W that is rotated while being held by the substrate holding unit 52, and pre-cleans the substrate W.
- the cleaning liquid supply unit 55 has a cleaning liquid nozzle 551 that discharges the cleaning liquid L3 onto the substrate W held by the substrate holding section 52, and a cleaning liquid supply source 552 that supplies the cleaning liquid L3 to the cleaning liquid nozzle 551. .
- the cleaning liquid supply source 552 is configured to supply the cleaning liquid L3 heated or temperature-controlled to a predetermined temperature as described later to the cleaning liquid nozzle 551 through the cleaning liquid pipe 553 .
- the cleaning liquid nozzle 551 is held by the nozzle arm 57 and is movable together with the first plating liquid nozzle 531 and the second plating liquid nozzle 541 .
- a dicarboxylic acid or tricarboxylic acid is used as the cleaning liquid L3.
- organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid and tartaric acid can be used as dicarboxylic acids.
- organic acids such as citric acid, can be used, for example.
- the rinse liquid supply unit 56 has a rinse liquid nozzle 561 that discharges the rinse liquid L4 onto the substrate W held by the substrate holder 52, and a rinse liquid supply source 562 that supplies the rinse liquid L4 to the rinse liquid nozzle 561. is doing.
- the rinse liquid nozzle 561 is held by the nozzle arm 57 and is movable together with the first plating liquid nozzle 531 , the second plating liquid nozzle 541 and the cleaning liquid nozzle 551 .
- the rinse liquid supply source 562 is configured to supply the rinse liquid L4 to the rinse liquid nozzle 561 via the rinse liquid pipe 563 .
- the rinse liquid L4 for example, DIW (deionized water) can be used.
- a nozzle moving mechanism (not shown) is connected to the nozzle arm 57 that holds the first plating solution nozzle 531, the second plating solution nozzle 541, the cleaning solution nozzle 551, and the rinse solution nozzle 561 described above.
- This nozzle moving mechanism moves the nozzle arm 57 horizontally and vertically. More specifically, the nozzle arm 57 is moved by the nozzle moving mechanism between a discharge position for discharging the processing liquid (the first plating liquid L1, the second plating liquid L2, the cleaning liquid L3 or the rinse liquid L4) onto the substrate W, and a discharge position. It is possible to move between the retracted position and the retracted position.
- the ejection position is not particularly limited as long as the treatment liquid can be supplied to any position on the surface of the substrate W.
- the ejection position of the nozzle arm 57 is can be different.
- the retracted position is a position within the chamber 51 that does not overlap the substrate W when viewed from above, and is a position away from the ejection position.
- the moving lid 6 is prevented from interfering with the nozzle arm 57 .
- a cup 581 is provided around the substrate holding portion 52 .
- the cup 581 has a ring shape when viewed from above, receives the processing liquid scattered from the substrate W when the substrate W rotates, and guides it to the drain duct 583 .
- An atmosphere blocking cover 582 is provided on the outer peripheral side of the cup 581 to prevent the atmosphere around the substrate W from diffusing into the chamber 51 .
- the atmosphere blocking cover 582 is formed in a cylindrical shape extending in the vertical direction, and has an open top end.
- a lid body 6, which will be described later, can be inserted into the atmosphere blocking cover 582 from above.
- the substrate W held by the substrate holding portion 52 is covered with the lid 6 .
- the lid 6 has a ceiling portion 61 and side wall portions 62 extending downward from the ceiling portion 61 .
- the ceiling part 61 includes a first ceiling board 611 and a second ceiling board 612 provided on the first ceiling board 611 .
- a heater 63 is interposed between the first ceiling plate 611 and the second ceiling plate 612 .
- the first ceiling plate 611 and the second ceiling plate 612 are configured to seal the heater 63 and prevent the heater 63 from coming into contact with the processing liquid such as the second plating liquid L2. More specifically, a seal ring 613 is provided on the outer peripheral side of the heater 63 and the heater 63 is sealed by the seal ring 613 .
- the first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a processing liquid such as the second plating liquid L2, and may be made of an aluminum alloy, for example.
- a processing liquid such as the second plating liquid L2
- the first ceiling panel 611, the second ceiling panel 612, and the side walls 62 may be coated with Teflon (registered trademark).
- a lid moving mechanism 7 is connected to the lid 6 via a lid arm 71 .
- the lid moving mechanism 7 moves the lid 6 horizontally and vertically. More specifically, the lid moving mechanism 7 has a turning motor 72 that horizontally moves the lid 6 and a cylinder 73 that vertically moves the lid 6 .
- the turning motor 72 is mounted on a support plate 74 that is vertically movable with respect to the cylinder 73 .
- an actuator (not shown) including a motor and a ball screw may be used.
- the turning motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position arranged above the substrate W held by the substrate holding part 52 and a retracted position retracted from the upper position.
- the upper position is a position facing the substrate W held by the substrate holding part 52 with a relatively large gap, and is a position overlapping the substrate W when viewed from above.
- the retracted position is a position within the chamber 51 that does not overlap the substrate W when viewed from above.
- the moving nozzle arm 57 is prevented from interfering with the lid body 6 .
- the rotational axis of the turning motor 72 extends vertically, and the lid body 6 can turn horizontally between the upper position and the retracted position.
- the cylinder 73 of the lid moving mechanism 7 vertically moves the lid 6 to adjust the distance between the substrate W supplied with the second plating solution L2 and the first ceiling plate 611 of the ceiling portion 61 . More specifically, the cylinder 73 positions the lid 6 at a lower position (the position indicated by the solid line in FIG. 2) and an upper position (the position indicated by the two-dot chain line in FIG. 2).
- the second plating solution L2 on the substrate holding part 52 or the substrate W is heated when the heater 63 is driven and the lid body 6 is positioned at the lower position described above. .
- a ceiling portion 61 and a side wall portion 62 of the lid body 6 are covered with a lid body cover 64 .
- the lid body cover 64 is placed on the second ceiling plate 612 of the lid body 6 via the support portion 65 . That is, a plurality of support portions 65 are provided on the second ceiling plate 612 to protrude upward from the upper surface of the second ceiling plate 612 , and the lid body cover 64 is placed on the support portions 65 .
- the lid body cover 64 can move horizontally and vertically together with the lid body 6 . Moreover, the lid body cover 64 preferably has a higher heat insulation than the ceiling part 61 and the side wall part 62 in order to prevent the heat inside the lid body 6 from escaping to the surroundings.
- the lid cover 64 is preferably made of a resin material, and more preferably the resin material has heat resistance.
- the lid body 6 having the heater 63 and the lid body cover 64 are integrally provided, and the cover unit 10 that covers the substrate holding part 52 or the substrate W when placed in the lower position is It is composed of the lid body 6 and the lid body cover 64 .
- a fan filter unit 59 that supplies clean air around the lid 6 is provided in the upper part of the chamber 51 .
- the fan filter unit 59 supplies air into the chamber 51 (especially inside the atmosphere blocking cover 582 ), and the supplied air flows toward the exhaust pipe 81 .
- a downflow is formed in which the air flows downward, and gas vaporized from the processing liquid such as the second plating solution L2 flows toward the exhaust pipe 81 due to this downflow. In this way, the gas vaporized from the processing liquid is prevented from rising and diffusing into the chamber 51 .
- the gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8.
- FIG. 3 is an enlarged cross-sectional view showing the state of the surface of the substrate W before the first plating process according to the embodiment.
- wiring 100 made of metal is formed on the substrate W, and an insulating film 110 is provided on the wiring 100 .
- the entire insulating film 110 is composed of an oxide film.
- the wiring 100 according to the embodiment is composed of an element that does not diffuse inside the insulating film 110, which is an oxide film.
- the wiring 100 is made of a conductive material containing Co, Ni or Ru, for example.
- vias 120 are formed in the substrate W at given positions in the insulating film 110 .
- Such a via 120 is an example of a recess, and is formed so as to penetrate from the upper surface of the insulating film 110 to the wiring 100 .
- the surface of the substrate W including the inside of the via 120 is covered with a barrier layer 131 made of Ta, TaN, or the like, and a barrier layer 131 made of cobalt (Co) or a cobalt alloy.
- a seed layer 132 is deposited in order.
- the seed layer 132 made of cobalt or a cobalt alloy is formed by a CVD (Chemical Vapor Deposition) method.
- a method for forming the vias 120 in the insulating film 110 of the substrate W conventionally known methods can be suitably adopted. Specifically, for example, as a dry etching technique, a general-purpose technique using a fluorine-based or chlorine-based gas can be applied.
- ICP-RIE Inductively Coupled Plasma Reactive Ion Etching
- a so-called Bosch process in which an etching step using sulfur hexafluoride (SF 6 ) and a protection step using a gas such as C 4 F 8 are repeatedly performed, can be suitably employed.
- SF 6 sulfur hexafluoride
- C 4 F 8 a gas such as C 4 F 8
- the substrate W in which the via 120 is formed in the insulating film 110 on the wiring 100 and the barrier layer 131 and the seed layer 132 are formed, is carried into the plating section 5 described above, and is subjected to a given treatment. Plating is performed.
- FIG. 4 is a diagram for explaining the first plating process according to the embodiment.
- the control unit 91 controls the first plating solution supply unit 53 to apply the first plating solution nozzle to the surface of the substrate W. From 531, the first plating solution L1 is discharged.
- control unit 91 uses the first plating solution L1 to perform displacement plating on the vias 120 (see FIG. 3).
- FIG. 5 is an enlarged cross-sectional view showing the state of the surface of the substrate W after the first plating process according to the embodiment.
- FIG. 6 is a diagram for explaining the second plating process according to the embodiment.
- control unit 91 uses the second plating solution L2 to perform the reduction plating process on the vias 120 (see FIG. 5).
- FIG. 7 is an enlarged cross-sectional view showing the state of the surface of the substrate W after the second plating process according to the embodiment.
- the reduction plating film 134 is formed using the thin film 133 formed by displacement plating as a catalyst, and the inside of the via 120 is filled with the reduction plating film 134 .
- the reduction plating film 134 it is possible to form good copper wiring without voids or seams inside the via 120 in which copper wiring is difficult to form because of its large aspect ratio.
- the seed layer 132 made of cobalt is not directly subjected to the reduction plating treatment, but the surface layer of the seed layer 132 is replaced with the copper thin film 133 before the reduction plating treatment.
- the inside of the via 120 can be better filled with the copper wiring than in the case of forming the reduction plated film 134 of copper using cobalt as a catalyst.
- a seed layer made of copper is to be subjected to a reduction plating treatment, such a copper seed layer can usually be formed only by the PVD method. Therefore, especially when the inner diameter of the via 120 is reduced as the multilayer wiring becomes finer, there is a possibility that a uniform seed layer cannot be formed inside the via 120 .
- the inside of the via 120 may not be satisfactorily filled with the reduction plated film 134 (that is, the copper wiring).
- the cobalt seed layer 132 that can be formed by a method other than the PVD method is used, the uniform seed layer 132 can be formed inside the via 120 as compared with the case of using the copper seed layer. can be formed. Therefore, according to the embodiment, the inside of the via 120 can be better filled with copper wiring than when a copper seed layer is used.
- the cobalt seed layer 132 may be formed by a CVD method. Thereby, a more uniform seed layer 132 can be formed inside the via 120 . Therefore, according to the embodiment, the inside of the via 120 can be better filled with the copper wiring.
- the cobalt seed layer 132 may have a thickness of 1 (nm) or more.
- the film-like seed layer 132 can be formed inside the via 120 instead of the island-like, so that a more uniform seed layer 132 can be formed inside the via 120 . Therefore, according to the embodiment, the inside of the via 120 can be better filled with the copper wiring.
- the cobalt seed layer 132 has a thickness of 2 (nm) to 5 (nm). As a result, a more uniform seed layer 132 can be formed inside the via 120, and deterioration of electrical resistance due to the thick cobalt seed layer 132 can be suppressed.
- the first plating process is performed by supplying the substrate W with the first plating solution L1 at room temperature or at a temperature higher than room temperature (for example, 23 (° C.) to 70 (° C.)).
- the surface layer of the seed layer 132 can be efficiently replaced with the thin film 133 by performing the displacement plating process with the first plating solution L1 at a temperature higher than room temperature.
- the first plating process is preferably performed while controlling the rotation speed of the substrate W to 1000 (rpm) or less. As a result, it is possible to prevent the first plating solution L1 from being shaken off on the surface of the substrate W and running out of the solution. Therefore, according to the embodiment, the entire surface of the substrate W can be uniformly subjected to displacement plating.
- the first plating process is performed, for example, while controlling the rotation of the substrate W at a low speed (for example, about 20 (rpm)) to form a puddle of the first plating solution L1 on the surface of the substrate W. Good. This makes it possible to reduce the amount of the first plating solution L1 used in the first plating process.
- the first plating process may be performed by repeating, for example, a puddle forming process of the first plating solution L1 on the surface of the substrate W and a process of shaking off the puddle.
- the amount of the first plating solution L1 used can be reduced, and impurities such as substituted cobalt can be removed from the first plating solution L1.
- a thin film 133 in a good state can be formed.
- the substrate W is controlled to rotate at a relatively high speed (for example, about 250 (rpm)), and the continuously supplied first plating solution L1 is spun from the edge of the substrate W at any time. It may be carried out while draining. As a result, impurities such as substituted cobalt can be removed from the first plating solution L1 in the first plating process, so that the thin film 133 can be formed in good condition.
- a relatively high speed for example, about 250 (rpm)
- the first plating treatment may be performed, for example, with the first plating solution L1 that does not contain a reducing agent.
- the first plating solution L1 that does not contain a reducing agent.
- the second plating process according to the embodiment is preferably performed while controlling the rotation speed of the substrate W to 100 (rpm) or less.
- the reduction plating process can be performed while forming puddles of the second plating solution L2 on the surface of the substrate W, so that the amount of the second plating solution L2 used in the second plating process can be reduced. .
- the substrate W on which the puddle of the second plating solution L2 is formed is covered with the lid 6, and the puddle of the second plating solution L2 is heated to a given temperature by the heater 63 of the lid 6. (For example, it may be carried out while raising the temperature to 40 (° C.) to 70 (° C.).
- reduction plating can be performed with the second plating solution L2 at a temperature higher than room temperature. can be filled in
- the temperature of the second plating solution L2 in the second plating process is preferably higher than the temperature of the first plating solution L1 in the first plating process.
- the second plating solution L2 is supplied to the surface of the substrate W to form a puddle of the second plating solution L2 on the surface of the substrate W.
- the substrate W on which the puddle of the second plating solution L2 is formed is covered with the lid 6.
- the turning motor 72 of the lid moving mechanism 7 is driven, and the lid 6 turns horizontally and is positioned at the upper position (the position indicated by the two-dot chain line in FIG. 2).
- the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered and positioned at the processing position.
- the distance between the second plating solution L2 on the substrate W and the first ceiling plate 611 of the lid 6 becomes a given distance, and the side wall portion 62 of the lid 6 is arranged on the outer peripheral side of the substrate W. be.
- the lower end of the side wall portion 62 of the lid 6 is positioned at a position lower than the lower surface of the substrate W. In this manner, the substrate W is covered with the lid 6, and the space around the substrate W is closed.
- the heater 63 is turned on to heat the second plating solution L2 deposited on the substrate W.
- the set temperature of the heater 63 is fixed to the target temperature at which the second plating solution L2 reaches the given temperature described above.
- target temperature is, for example, 100 (° C.) to 140 (° C.).
- the components of the second plating solution L2 are deposited on the surface of the thin film 133, forming a reduction plating film 134.
- the heater 63 After the heat treatment by the heater 63 is started, the heater 63 is turned off when the time preset as the heat treatment time elapses.
- the lid body 6 is retracted from the substrate W.
- the lid body moving mechanism 7 is driven to position the lid body 6 at the retracted position, and further the turning motor 72 of the lid body moving mechanism 7 is driven to horizontally turn the lid body 6 positioned at the upper position. It moves and is positioned at the retracted position. This completes the second plating process.
- the surface of the substrate W is wet with the first plating solution L1 during the period from the end of the first plating treatment to the start of the second plating treatment (that is, the surface of the substrate W is wet with the first plating solution L1).
- L1 liquid film is formed).
- the second plating process can be performed using the thin film 133 in good condition as a catalyst, the inside of the via 120 can be more satisfactorily filled with the reduction plating film 134 .
- FIG. 8 is a diagram for explaining the first plating process according to the modification of the embodiment.
- the control unit 91 controls the first plating solution supply unit 53 to apply the first plating solution nozzle to the surface of the substrate W. From 531, the first plating solution L1 is discharged.
- the control unit 91 uses the first plating solution L1 to perform displacement plating on the vias 120 (see FIG. 3).
- the displacement plating treatment the cobalt surface layer of the seed layer 132 formed inside the via 120 is replaced with a copper thin film 133 as shown in FIG.
- the first plating process according to the modification is the same as that of the above-described embodiment, detailed description thereof will be omitted.
- FIG. 9 is a diagram for explaining the second plating process according to the modification of the embodiment.
- the control unit 91 controls the first plating solution supply unit 53 so that the substrate W is The first plating solution L1 is discharged from the first plating solution nozzle 531 onto the surface of the .
- control unit 91 controls the second plating solution supply unit 54 to discharge the third plating solution L2a onto the surface of the substrate W from the second plating solution nozzle 541.
- the third plating solution L2a contains a reducing agent in a larger proportion than the first plating solution L1 and does not contain copper ions.
- control unit 91 discharges the first plating solution L1 and the third plating solution L2a onto the surface of the substrate W in the second plating process, mixes them on the surface of the substrate W, and produces the second plating solution. Generate L2. Then, the controller 91 uses the generated second plating solution L2 to perform the reduction plating process on the via 120 (see FIG. 5).
- a reduction plated film 134 (see FIG. 7) is formed inside the via 120 .
- the second plating process according to the modification is the same as the above-described embodiment except that the first plating solution L1 and the third plating solution L2a are simultaneously discharged instead of the second plating solution L2. Description is omitted.
- the first plating solution L1 may contain no reducing agent
- the third plating solution L2a may contain a reducing agent and unavoidable impurities.
- the second plating solution L2 may be generated by mixing the first plating solution L1 and the third plating solution L2a on the surface of the substrate W.
- the present disclosure is not limited to such an example.
- the first plating solution L1 and the third plating solution L2a are placed above the substrate W (that is, the discharged first plating solution L1 and the third plating solution L2a W) may be mixed to form the second plating solution L2.
- FIG. 10 is a diagram for explaining a second plating process according to another modification of the embodiment.
- the control unit 91 controls the second plating solution supply unit 54 to remove the substrate W on which the liquid film of the first plating solution L1 is formed. Only the third plating solution L2a is discharged from the second plating solution nozzle 541 onto the surface. Thereby, the controller 91 mixes the discharged third plating solution L2a and the liquid film of the first plating solution L1 on the surface of the substrate W to generate the second plating solution L2.
- control unit 91 uses the generated second plating solution L2 to perform the reduction plating process on the vias 120 (see FIG. 4). As a result, a reduction plated film 134 (see FIG. 6) is formed inside the via 120 .
- the surface layer of the seed layer 132 made of cobalt is replaced with the copper thin film 133 by substitution plating, and then reduction plating is performed. Therefore, according to another modification, the inside of the via 120 can be satisfactorily filled with copper wiring as in the above-described embodiment.
- the via 120 is filled with the copper wiring (reduction plating film 134)
- the present disclosure is not limited to such an example, and the copper wiring is formed on the surface of the substrate W.
- Various recesses eg, trenches, etc. may be filled with copper wiring.
- the plating processing apparatus (substrate processing apparatus 1) according to the embodiment includes a substrate holding section 52 that rotatably holds a substrate W, and a chemical liquid supply section (a first plating liquid supply section 53, a second plating liquid supply section 53, a second A plating solution supply unit 54) and a control unit 91 that controls each unit are provided. Further, the control unit 91 holds the substrate W with the cobalt or cobalt alloy seed layer 132 formed in the concave portion (via 120 ) by the substrate holding unit 52 . Further, the control unit 91 performs displacement plating on the substrate W using the first plating solution L1 containing copper ions to replace the surface layer of the seed layer 132 with copper.
- control unit 91 After the displacement plating process, the control unit 91 performs the reduction plating process on the recess (via 120) of the substrate W using the second plating solution L2 containing copper ions and a reducing agent. As a result, the inside of the via 120 can be satisfactorily filled with the copper wiring.
- the chemical solution supply unit includes the first plating solution L1 in which the reducing agent is smaller than a given ratio, and the reducing agent in which the ratio is larger than that of the first plating solution L1. It is configured to be able to supply the substrate W with the third plating solution L2a containing the agent. Further, the control unit 91 performs the reduction plating process on the substrate W using the second plating solution L2 generated by mixing the first plating solution L1 and the third plating solution L2a. As a result, the inside of the via 120 can be more satisfactorily filled with the copper wiring.
- the controller 91 controls the rotation speed of the substrate W to 1000 (rpm) or less during the displacement plating process. As a result, the entire surface of the substrate W can be uniformly subjected to displacement plating.
- the controller 91 controls the rotation speed of the substrate to 100 (rpm) or less during the reduction plating process. As a result, the usage amount of the second plating solution L2 can be reduced.
- FIG. 11 is a flow chart showing the procedure of the plating process according to the embodiment.
- control unit 91 controls the substrate transport devices 13 and 17 to transport the substrate W from the carrier C into the plating processing unit 5 and hold the substrate W by the substrate holding unit 52, thereby is prepared (step S101).
- control unit 91 performs cleaning processing on the substrate W (step S102).
- the rotary motor 523 is driven to rotate the substrate W at a predetermined number of revolutions.
- the nozzle arm 57 positioned at the retracted position moves to the discharge position above the center of the substrate W. As shown in FIG.
- the cleaning liquid L3 is supplied from the cleaning liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is cleaned. As a result, deposits and the like adhering to the substrate W are removed from the substrate W. As shown in FIG. The cleaning liquid L 3 supplied to the substrate W is discharged to the drain duct 583 .
- the control unit 91 performs a rinse process on the substrate W (step S103).
- the rinsing liquid L4 is supplied from the rinsing liquid nozzle 561 to the rotating substrate W, and the surface of the substrate W is rinsed. As a result, the cleaning liquid L3 remaining on the substrate W is washed away.
- the rinse liquid L ⁇ b>4 supplied to the substrate W is discharged to the drain duct 583 .
- the control unit 91 performs the first plating process on the substrate W (step S104).
- the first plating solution L1 is supplied from the first plating solution nozzle 531 to the substrate W rotating at 1000 (rpm) or less, and the cobalt seed layer 132 formed inside the via 120 is subjected to substitution plating. be.
- the first plating solution L ⁇ b>1 supplied to the substrate W is discharged to the drain duct 583 .
- the control unit 91 performs the second plating process on the substrate W (step S105).
- the second plating solution L2 is supplied from the second plating solution nozzle 541 to the substrate W rotating at 100 (rpm) or less, and a puddle of the second plating solution L2 is formed on the surface of the substrate W.
- FIG. As a result, a reduction plated film 134 is formed inside the via 120 using the copper thin film 133 formed by the first plating process as a catalyst.
- step S106 the controller 91 covers the substrate W with the lid 6 and operates the heater 63 to heat the puddle of the second plating solution L2 formed on the surface of the substrate W (step S106). . This promotes formation of the reduction plated film 134 . Since the details of the processing of step S106 have been described above, detailed description thereof will be omitted.
- control unit 91 performs a rinse process on the substrate W (step S107).
- the lid 6 is retracted from above the substrate W.
- the rotary motor 523 is driven to rotate the substrate W at a predetermined number of revolutions.
- the rinsing liquid L4 is supplied from the rinsing liquid nozzle 561 to the rotating substrate W, and the surface of the substrate W is rinsed. As a result, the second plating solution L2 remaining on the substrate W is washed away.
- the rinse liquid L ⁇ b>4 supplied to the substrate W is discharged to the drain duct 583 .
- step S108 the rinsed substrate W is dried.
- the substrate W is rotated at a high speed by increasing the rotation speed of the substrate W more than the rotation speed of the rinsing process (step S107).
- the rinse liquid L4 remaining on the substrate W is shaken off and the substrate W is dried.
- the substrate W is taken out from the plating processing section 5 by the substrate transfer device 17 and transferred to the transfer section 14 .
- the substrate W transported to the delivery section 14 is taken out from the delivery section 14 by the substrate transport device 13 and accommodated in the carrier C. As shown in FIG. Thus, a series of plating processes for one substrate W is completed.
- the plating method includes a preparation process (step S101), a first plating process (step S104), and a second plating process (step S105).
- a preparation step (step S101) a substrate W is prepared in which a seed layer 132 of cobalt or a cobalt alloy is formed in recesses (vias 120).
- the substrate W is subjected to substitution plating by using a first plating solution L1 containing copper ions to replace the surface layer of the seed layer 132 with copper.
- the substrate W is reduced to the concave portions (vias 120) using a second plating solution L2 containing copper ions and a reducing agent. Plating is performed. As a result, the inside of the via 120 can be satisfactorily filled with the copper wiring.
- the second plating step includes the first plating solution L1 containing a reducing agent in a smaller ratio than a given ratio, and the third plating solution L1 containing a reducing agent in a ratio larger than that of the first plating solution L1.
- the second plating solution L2 is produced by mixing with the plating solution L2a.
- the first plating solution L1 does not contain a reducing agent.
- the inside of the via 120 can be more satisfactorily filled with the copper wiring.
- the second plating step (step S105) is performed on the substrate W wet with the first plating solution L1.
- the interior of the via 120 can be more satisfactorily filled with the reduction plating film 134 .
- the seed layer 132 is formed by the CVD method. As a result, the inside of the via 120 can be more satisfactorily filled with the copper wiring.
- the thickness of the seed layer 132 is 1 (nm) or more. As a result, the inside of the via 120 can be more satisfactorily filled with the copper wiring.
- the temperature of the second plating solution L2 is higher than that of the first plating solution +1. Therefore, the overall processing time of the substrate W can be reduced.
- Substrate processing equipment (an example of plating processing equipment) 5 plating processing unit 52 substrate holding unit 53 first plating solution supply unit (an example of a chemical solution supply unit) 54 second plating solution supply unit (an example of a chemical solution supply unit) 91 control unit 120 via (an example of a concave portion) 132 seed layer 133 thin film 134 reduction plating film L1 first plating solution L2 second plating solution L2a third plating solution W substrate
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Abstract
Description
最初に、実施形態に係る基板処理装置1の概略構成について、図1を参照しながら説明する。図1は、実施形態に係る基板処理装置1の構成を示す図である。基板処理装置1は、めっき処理装置の一例である。
次に、めっき処理部5の概略構成について、図2を参照しながら説明する。図2は、実施形態に係るめっき処理部5の構成を示す図である。めっき処理部5は、たとえば、基板Wを1枚ずつ処理する枚葉式の処理ユニットとして構成される。
つづいて、実施形態に係るめっき処理の詳細について、図3~図7を参照しながら説明する。図3は、実施形態に係る第1めっき処理前の基板W表面の状態を示す拡大断面図である。
つづいて、実施形態の各種変形例について、図8~図10を参照しながら説明する。図8は、実施形態の変形例に係る第1めっき処理を説明するための図である。
つづいて、図11を参照しながら、実施形態に係る基板処理装置1が実行するめっき処理の詳細について説明する。図11は、実施形態に係るめっき処理の処理手順を示すフローチャートである。
5 めっき処理部
52 基板保持部
53 第1めっき液供給部(薬液供給部の一例)
54 第2めっき液供給部(薬液供給部の一例)
91 制御部
120 ビア(凹部の一例)
132 シード層
133 薄膜
134 還元めっき膜
L1 第1めっき液
L2 第2めっき液
L2a 第3めっき液
W 基板
Claims (11)
- 凹部にコバルトまたはコバルト合金のシード層が形成された基板を準備する準備工程と、
前記基板に対して銅イオンを含有する第1めっき液を用いて、前記シード層の表層を銅に置換する置換めっき処理を行う第1めっき工程と、
前記第1めっき工程の後に、前記基板に対して銅イオンおよび還元剤を含有する第2めっき液を用いて、前記凹部に還元めっき処理を行う第2めっき工程と、
を含むめっき処理方法。 - 前記第2めっき工程は、還元剤が所与の割合よりも小さい前記第1めっき液と、前記第1めっき液よりも割合の大きい還元剤を含む第3めっき液とを混合して生成される前記第2めっき液を用いて行われる
請求項1に記載のめっき処理方法。 - 前記第1めっき液は、還元剤を含まない
請求項1または2に記載のめっき処理方法。 - 前記第2めっき工程は、前記第1めっき液で濡れた状態の前記基板に対して行われる
請求項1~3のいずれか一つに記載のめっき処理方法。 - 前記シード層は、CVD法により形成される
請求項1~4のいずれか一つに記載のめっき処理方法。 - 前記シード層の厚みは、1(nm)以上である
請求項1~5のいずれか一つに記載のめっき処理方法。 - 前記第2めっき液は、前記第1めっき液よりも温度が高い
請求項1~6のいずれか一つに記載のめっき処理方法。 - 基板を回転可能に保持する基板保持部と、
前記基板に薬液を供給する薬液供給部と、
各部を制御する制御部と、
を備え、
前記制御部は、
凹部にコバルトまたはコバルト合金のシード層が形成された前記基板を前記基板保持部で保持し、
前記基板に対して銅イオンを含有する第1めっき液を用いて、前記シード層の表層を銅に置換する置換めっき処理を行い、
前記置換めっき処理の後に、前記基板に対して銅イオンおよび還元剤を含有する第2めっき液を用いて、前記凹部に還元めっき処理を行う
めっき処理装置。 - 前記薬液供給部は、還元剤が所与の割合よりも小さい前記第1めっき液と、前記第1めっき液よりも割合の大きい還元剤を含む第3めっき液とを前記基板に供給可能に構成され、
前記制御部は、前記基板上で前記第1めっき液と前記第3めっき液を混合して生成される前記第2めっき液を用いて前記還元めっき処理を行う
請求項8に記載のめっき処理装置。 - 前記制御部は、前記置換めっき処理の際に、前記基板の回転数を1000(rpm)以下に制御する
請求項8または9に記載のめっき処理装置。 - 前記制御部は、前記還元めっき処理の際に、前記基板の回転数を100(rpm)以下に制御する
請求項8~10のいずれか一つに記載のめっき処理装置。
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JP2001102448A (ja) * | 1999-09-30 | 2001-04-13 | Seiko Epson Corp | 配線の形成方法 |
JP2010185113A (ja) * | 2009-02-12 | 2010-08-26 | Kansai Univ | 無電解銅めっき液、無電解銅めっき方法、及び埋め込み配線の形成方法 |
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JP2001102448A (ja) * | 1999-09-30 | 2001-04-13 | Seiko Epson Corp | 配線の形成方法 |
JP2010185113A (ja) * | 2009-02-12 | 2010-08-26 | Kansai Univ | 無電解銅めっき液、無電解銅めっき方法、及び埋め込み配線の形成方法 |
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