JP7280213B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7280213B2 JP7280213B2 JP2020036827A JP2020036827A JP7280213B2 JP 7280213 B2 JP7280213 B2 JP 7280213B2 JP 2020036827 A JP2020036827 A JP 2020036827A JP 2020036827 A JP2020036827 A JP 2020036827A JP 7280213 B2 JP7280213 B2 JP 7280213B2
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- 239000004065 semiconductor Substances 0.000 title claims description 381
- 239000012535 impurity Substances 0.000 claims description 54
- 230000015556 catabolic process Effects 0.000 description 55
- 230000005684 electric field Effects 0.000 description 21
- 238000007789 sealing Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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Description
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
以下の説明及び図面において、n++、n+、n、n-及びp++、p+、pの表記は、各不純物濃度の相対的な高低を表す。すなわち、「+」が付されている表記は、「+」及び「-」のいずれも付されていない表記よりも不純物濃度が相対的に高く、「-」が付されている表記は、いずれも付されていない表記よりも不純物濃度が相対的に低いことを示す。これらの表記は、それぞれの領域にp形不純物とn形不純物の両方が含まれている場合には、それらの不純物が補償しあった後の正味の不純物濃度の相対的な高低を表す。
以下で説明する各実施形態について、各半導体領域のp形とn形を反転させて各実施形態を実施してもよい。
図1及び図2は、第1実施形態に係る半導体装置を表す平面図である。
図3は、図1及び図2のIII-III断面図である。
第1実施形態に係る半導体装置100は、ダイオードである。半導体装置100は、図1~図3に表したように、下部電極21(第1電極)、上部電極22(第2電極)、EQuivalent-Potential Ring(EQPR)電極23(第3電極)、導電層25、絶縁層30、絶縁層31、及び封止部32を含む。なお、図1では、絶縁層31及び封止部32が省略されている。図2では、上部電極22、EQPR電極23、導電層25、絶縁層30、絶縁層31、及び封止部32が省略されている。
下部電極21に対して上部電極22に正の電圧が印加されると、n-形半導体領域1とp形半導体領域2との間のpn接合面に順方向電圧が印加される。これにより、半導体装置100がオン状態となり、上部電極22から下部電極21へ電流が流れる。
n-形半導体領域1、p形半導体領域2、p++形半導体領域3、n++形EQPR領域4、n形ストッパ領域5、p+形ガードリング領域6、n++形コンタクト領域7、及びp++形コンタクト領域8は、半導体材料として、シリコン、炭化シリコン、窒化ガリウム、またはガリウムヒ素を含む。半導体材料としてシリコンが用いられる場合、n形不純物として、ヒ素、リン、またはアンチモンを用いることができる。p形不純物として、ボロンを用いることができる。
下部電極21、上部電極22、EQPR電極23、及び導電層25は、アルミニウム又は銅などの金属を含む。
絶縁層30及び31は、酸化シリコン又は窒化シリコンなどの絶縁材料を含む。封止部32は、ポリイミドなどの絶縁性樹脂材料を含む。
絶縁層31が酸化シリコン又は窒化シリコンを含む場合、絶縁層31にシリコンが比較的多く含まれても良い。これにより、絶縁層31が半絶縁性となる。又は、絶縁層31は、半絶縁性の材料として、炭化水素及び炭素同素体を含むアモルファスの炭素構造物を含んでも良い。半絶縁性の絶縁層31の電気抵抗率は、例えば、1.0×108[Ω・cm]以上1.0×1013[Ω・cm]未満である。絶縁層30の電気抵抗率は、例えば1.0×1013[Ω・cm]以上である。
図4は、参考例に係る半導体装置の一部を表す断面図である。
図5(a)は、参考例に係る半導体装置の特性を表すグラフである。図5(b)は、第1実施形態に係る半導体装置の特性を表すグラフである。
図6は、第1実施形態に係る半導体装置の一部を表す断面図である。
参考例に係る半導体装置100rは、p++形半導体領域3及びn形ストッパ領域5を含まない点で、第1実施形態に係る半導体装置100と異なる。
半導体装置100は、複数のp+形ガードリング領域6を含むことが好ましい。複数のp+形ガードリング領域6が設けられることで、空乏層DLが半導体装置100の外周に向けて広がり易くなる。これにより、p形半導体領域2の外周における電界強度が低下し、半導体装置100の耐圧が向上する。また、終端領域における空乏層DLの広がりが安定し、電圧VPの変動を抑制できる。
図7は、第1実施形態の変形例に係る半導体装置の一部を表す断面図である。
図7に表した変形例に係る半導体装置110は、n形ストッパ領域9(第7半導体領域)を含む点で半導体装置100と異なる。
図8において、縦軸は、降伏が生じる電圧Vbkを表す。横軸は、n形ストッパ領域5の不純物総量A1とn形ストッパ領域9の不純物総量との和Asumを表す。縦軸は、任意単位で表されている。図8は、n形ストッパ領域5の不純物総量A1及び和Asumを変化させたときの、電圧Vbkの変化を表している。不純物総量は、X-Y面における単位面積あたりの、Z方向における不純物濃度の積分値である。
図10は、第2実施形態に係る半導体装置の一部を表す断面図である。
第2実施形態に係る半導体装置200は、MOSFETである。図10に表したように、半導体装置200は、半導体装置100と比べて、n++形ソース領域10(第8半導体領域)及びゲート電極15をさらに有する。
上部電極22に対して下部電極21に正電圧が印加された状態で、ゲート電極15に閾値以上の電圧を印加する。これにより、p形半導体領域2にチャネル(反転層)が形成され、半導体装置200がオン状態となる。電子は、チャネルを通って上部電極22から下部電極21へ流れる。その後、ゲート電極15に印加される電圧が閾値よりも低くなると、p形半導体領域2におけるチャネルが消滅し、半導体装置200がオフ状態になる。
図11は、第3実施形態に係る半導体装置の一部を表す断面図である。
第3実施形態に係る半導体装置300は、IGBTである。図11に表したように、半導体装置300は、半導体装置100と比べて、n++形ソース領域10、p++形コレクタ領域11(第9半導体領域)、n+形バッファ領域12、及びゲート電極15をさらに有する。
上部電極22に対して下部電極21に正電圧が印加された状態で、ゲート電極15に閾値以上の電圧を印加する。これにより、p形半導体領域2にチャネル(反転層)が形成され、半導体装置300がオン状態となる。電子がチャネルを通って上部電極22からn-形半導体領域1へ流れると、正孔がp++形コレクタ領域11からn-形半導体領域1に注入される。n-形半導体領域1において伝導度変調が生じることで、半導体装置300の電気抵抗が大きく低下する。その後、ゲート電極15に印加される電圧が閾値よりも低くなると、p形半導体領域2におけるチャネルが消滅し、半導体装置300がオフ状態になる。
Claims (5)
- 第1電極と、
前記第1電極の上に設けられ、前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第2導電形の第2半導体領域と、
前記第1電極から前記第1半導体領域に向かう第1方向と交差する第1面に沿って前記第2半導体領域の周りに設けられ、前記第2半導体領域から離れた第2導電形の第3半導体領域と、
前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第4半導体領域と、
前記第2半導体領域と前記第3半導体領域との間に設けられた第1導電形の第5半導体領域であって、前記第5半導体領域における第1導電形の不純物濃度は、前記第1半導体領域における第1導電形の不純物濃度よりも高く、前記第4半導体領域における第1導電形の不純物濃度よりも低い、前記第5半導体領域と、
前記第2半導体領域と前記第5半導体領域との間に設けられ、前記第2半導体領域及び前記第5半導体領域から離れた第2導電形の複数の第6半導体領域であって、それぞれが前記第1面に沿って前記第2半導体領域の周りに設けられた、前記複数の第6半導体領域と、
前記第2半導体領域の上に設けられ、前記第2半導体領域と電気的に接続された第2電極と、
前記第3半導体領域及び前記第4半導体領域の上に設けられ、前記第3半導体領域及び前記第4半導体領域と電気的に接続され、前記第2電極から離れた第3電極と、
前記複数の第6半導体領域の上にそれぞれ設けられ、前記複数の第6半導体領域とそれぞれ電気的に接続された複数の導電層であって、それぞれが前記第1面に沿って前記第2電極の周りに設けられ、前記複数の導電層の1つは前記第2電極から前記第3電極に向かう方向において前記第3電極と隣り合い、前記複数の導電層の前記1つの一部及び前記第3電極の一部は前記第5半導体領域の上に位置する、前記複数の導電層と、
を備えた半導体装置。 - 第1電極と、
前記第1電極の上に設けられ、前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第2導電形の第2半導体領域と、
前記第1電極から前記第1半導体領域に向かう第1方向と交差する第1面に沿って前記第2半導体領域の周りに設けられ、前記第2半導体領域から離れた第2導電形の第3半導体領域と、
前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第4半導体領域と、
前記第2半導体領域と前記第3半導体領域との間に設けられた第1導電形の第5半導体領域であって、前記第5半導体領域における第1導電形の不純物濃度は、前記第1半導体領域における第1導電形の不純物濃度よりも高く、前記第4半導体領域における第1導電形の不純物濃度よりも低く、前記第5半導体領域の第1導電形の不純物総量は、6.0×1011atom/cm2以上、2.0×1012atom/cm2以下である、前記第5半導体領域と、
前記第2半導体領域の上に設けられ、前記第2半導体領域と電気的に接続された第2電極と、
前記第3半導体領域及び前記第4半導体領域の上に設けられ、前記第3半導体領域及び前記第4半導体領域と電気的に接続され、前記第2電極から離れた第3電極と、
を備えた半導体装置。 - 第1電極と、
前記第1電極の上に設けられ、前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第2導電形の第2半導体領域と、
前記第1電極から前記第1半導体領域に向かう第1方向と交差する第1面に沿って前記第2半導体領域の周りに設けられ、前記第2半導体領域から離れた第2導電形の第3半導体領域と、
前記第1面に沿って前記第3半導体領域の周りに設けられ、前記第1半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第4半導体領域と、
前記第3半導体領域及び前記第4半導体領域の下に設けられた第1導電形の第7半導体領域であって、前記第7半導体領域における第1導電形の不純物濃度は、前記第1半導体領域における第1導電形の不純物濃度よりも高く、前記第4半導体領域における第1導電形の不純物濃度よりも低い、前記第7半導体領域と、
前記第2半導体領域の上に設けられ、前記第2半導体領域と電気的に接続された第2電極と、
前記第3半導体領域及び前記第4半導体領域の上に設けられ、前記第3半導体領域及び前記第4半導体領域と電気的に接続され、前記第2電極から離れた第3電極と、
を備えた半導体装置。 - 前記第2半導体領域の上に設けられた第1導電形の第8半導体領域と、
ゲート絶縁層を介して前記第2半導体領域と対向するゲート電極と、
をさらに備えた請求項1~3のいずれか1つに記載の半導体装置。 - 前記第1電極と前記第1半導体領域との間に設けられた第2導電形の第9半導体領域をさらに備えた請求項4記載の半導体装置。
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