JP7246247B2 - 基板処理装置及び監視方法 - Google Patents
基板処理装置及び監視方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 50
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- 238000012544 monitoring process Methods 0.000 title claims description 16
- 238000006073 displacement reaction Methods 0.000 claims description 83
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 207
- 235000012431 wafers Nutrition 0.000 description 102
- 230000002093 peripheral effect Effects 0.000 description 50
- 230000008569 process Effects 0.000 description 45
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- 238000005259 measurement Methods 0.000 description 20
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- 238000010586 diagram Methods 0.000 description 13
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- 238000012423 maintenance Methods 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000012806 monitoring device Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
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- 239000002052 molecular layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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Description
一実施形態の基板処理装置について説明する。基板処理装置は、回転テーブルを回転させながら基板の処理を行う装置であれば、種々の基板処理装置が適用可能であるが、以下では、基板処理装置が成膜装置として構成された例を挙げて説明する。
次に、シャワーヘッド30の傾きを取得する処理(以下「傾き取得処理」という。)について説明する。傾き取得処理は、制御部100が、例えば使用者による傾き取得処理を開始する操作を受け付けた場合に実行される。図9は、傾き取得処理の一例を示すフローチャートである。図10は、傾き取得処理における高さ計測位置の一例を示す図である。
次に、ギャップを測定する処理(以下「ギャップ測定処理」という。)について説明する。ギャップ測定処理は、例えば回転テーブル2を間欠的に低速回転させ、各凹部24にウエハWを載置する際や、回転テーブル2の各凹部24にウエハWを載置させた状態でウエハWに対して成膜処理を実行している期間に実行される。
次に、ウエハWの反りを監視する処理(以下「反り監視処理」という。)について説明する。反り監視処理は、回転テーブル2の凹部24にウエハWが載置されている状態であれば任意の期間に実行可能である。図15は、反り監視処理の一例を示すフローチャートである。
30 シャワーヘッド
31 底面板
31c 段部
100 制御部
110a、110b レーザ変位計
111a、111b 投光部
112a、112b 受光部
120 演算部
Claims (9)
- 上面に基板を載置する載置部と、
前記載置部の上方に前記載置部と対向して設けられ、前記基板にガスを供給するシャワーヘッドと、
前記シャワーヘッドの上方から前記載置部の所定位置、前記シャワーヘッドの所定位置及び前記基板に光を照射して前記載置部、前記シャワーヘッド及び前記基板からの反射光を受光することにより、前記載置部の高さ位置、前記シャワーヘッドの高さ位置及び前記基板の高さ位置を検出する光学センサと、
を備え、
前記光学センサは、前記載置部の所定位置と前記シャワーヘッドの所定位置とを同時に検出するよう構成される、
基板処理装置。 - 前記光学センサは、二次元レーザ変位計である、
請求項1に記載の基板処理装置。 - 前記シャワーヘッドの所定位置は、前記シャワーヘッドの周縁であり、
前記シャワーヘッドの周縁には、段部が形成されている、
請求項1又は2に記載の基板処理装置。 - 前記載置部は、周方向に沿って設けられ、上面に基板を載置する複数の基板載置領域を有する回転テーブルである、
請求項1乃至3のいずれか一項に記載の基板処理装置。 - 前記光学センサは、前記回転テーブルの半径方向に沿って複数設けられている、
請求項4に記載の基板処理装置。 - 前記光学センサにより第1の光量で光を照射しながら前記回転テーブルを回転させた後、前記光学センサにより前記第1の光量と異なる第2の光量で光を照射しながら前記回転テーブルを回転させるように前記回転テーブルの動作を制御する制御部を更に備える、
請求項4又は5に記載の基板処理装置。 - 前記載置部の高さ位置及び前記シャワーヘッドの高さ位置に基づいて、前記載置部と前記シャワーヘッドとの間の距離を算出する演算部を更に備える、
請求項1乃至6のいずれか一項に記載の基板処理装置。 - 前記載置部及び前記シャワーヘッドからの反射光は拡散反射光であり、
前記基板からの反射光は正反射光である、
請求項1乃至7のいずれか一項に記載の基板処理装置。 - 処理室内に設けられ、周方向に沿って基板載置領域を有する回転テーブルの上面に基板を載置する工程と、
光学センサにより第1の光量で光を照射しながら前記回転テーブルを回転させ、前記回転テーブル及び前記回転テーブルの上方に前記回転テーブルと対向して設けられたシャワーヘッドからの反射光を受光することにより、前記回転テーブルの高さ位置と前記シャワーヘッドの高さ位置とを同時に検出する工程と、
前記光学センサにより前記第1の光量よりも小さい第2の光量で光を照射しながら前記回転テーブルを回転させ、前記回転テーブルの上面に載置された前記基板からの反射光を受光することにより、前記基板の高さ位置を検出する工程と、
を有する、
監視方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2019092353A JP7246247B2 (ja) | 2019-05-15 | 2019-05-15 | 基板処理装置及び監視方法 |
US16/868,843 US11765879B2 (en) | 2019-05-15 | 2020-05-07 | Substrate processing apparatus and monitoring method |
KR1020200054876A KR102659960B1 (ko) | 2019-05-15 | 2020-05-08 | 기판 처리 장치 및 감시 방법 |
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